NL9002376A - Hoog geintegreerde halfgeleidergeheugeninrichting en methode voor het vervaardigen daarvan. - Google Patents
Hoog geintegreerde halfgeleidergeheugeninrichting en methode voor het vervaardigen daarvan. Download PDFInfo
- Publication number
- NL9002376A NL9002376A NL9002376A NL9002376A NL9002376A NL 9002376 A NL9002376 A NL 9002376A NL 9002376 A NL9002376 A NL 9002376A NL 9002376 A NL9002376 A NL 9002376A NL 9002376 A NL9002376 A NL 9002376A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- forming
- highly integrated
- memory device
- integrated semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000003990 capacitor Substances 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000010992 reflux Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000005380 borophosphosilicate glass Substances 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000006870 function Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR900012555 | 1990-08-14 | ||
| KR1019900012555A KR930007194B1 (ko) | 1990-08-14 | 1990-08-14 | 반도체 장치 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL9002376A true NL9002376A (nl) | 1992-03-02 |
Family
ID=19302368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9002376A NL9002376A (nl) | 1990-08-14 | 1990-10-31 | Hoog geintegreerde halfgeleidergeheugeninrichting en methode voor het vervaardigen daarvan. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5124765A (zh) |
| JP (1) | JPH0727978B2 (zh) |
| KR (1) | KR930007194B1 (zh) |
| CN (1) | CN1030631C (zh) |
| DE (1) | DE4034995C2 (zh) |
| FR (1) | FR2665982B1 (zh) |
| GB (1) | GB2247105B (zh) |
| HK (1) | HK189895A (zh) |
| IT (1) | IT1244053B (zh) |
| NL (1) | NL9002376A (zh) |
| RU (1) | RU2127928C1 (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4122038C2 (de) * | 1990-07-03 | 1994-08-25 | Mitsubishi Electric Corp | Herstellungsverfahren für einen DRAM |
| KR100285823B1 (ko) * | 1992-08-10 | 2001-04-16 | 칼 하인쯔 호르닝어 | 디램 셀 장치 |
| US5739576A (en) * | 1995-10-06 | 1998-04-14 | Micron Technology, Inc. | Integrated chip multilayer decoupling capacitors |
| US6150211A (en) * | 1996-12-11 | 2000-11-21 | Micron Technology, Inc. | Methods of forming storage capacitors in integrated circuitry memory cells and integrated circuitry |
| US6020609A (en) * | 1997-10-31 | 2000-02-01 | Texas Instruments - Acer Incorporated | DRAM cell with a rugged stacked trench (RST) capacitor |
| US5942777A (en) * | 1998-05-05 | 1999-08-24 | Sun Microsystems, Inc. | Memory device including a memory array having a combination of trench capacitor DRAM cells and stacked capacitor DRAM cells |
| JP4005805B2 (ja) * | 2001-12-17 | 2007-11-14 | 株式会社東芝 | 半導体装置 |
| KR20040009383A (ko) * | 2002-07-23 | 2004-01-31 | 삼성전자주식회사 | 스택형 커패시터 및 트랜치형 커패시터를 포함하는 반도체메모리 소자 및 그 제조 방법 |
| CN1324671C (zh) * | 2002-09-06 | 2007-07-04 | 旺宏电子股份有限公司 | 波浪状电容器及其制造方法 |
| DE102004043857B3 (de) * | 2004-09-10 | 2006-03-30 | Infineon Technologies Ag | DRAM-Zellenpaar und DRAM-Speicherzellenfeld mit Stack- und Trench-Speicherzellen sowie Verfahren zur Herstellung eines DRAM-Speicherzellenfeldes |
| KR101128982B1 (ko) * | 2008-03-21 | 2012-03-23 | 주식회사 하이닉스반도체 | 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치 |
| JP3197990U (ja) * | 2015-03-31 | 2015-06-11 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
| US11152383B2 (en) * | 2020-03-03 | 2021-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-volatile memory (NVM) cell structure to increase reliability |
| US11387242B2 (en) | 2020-03-03 | 2022-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-volatile memory (NVM) cell structure to increase reliability |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61177771A (ja) * | 1985-02-04 | 1986-08-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH0795566B2 (ja) * | 1985-12-12 | 1995-10-11 | 松下電子工業株式会社 | 半導体メモリ装置 |
| JPH0815207B2 (ja) * | 1986-02-04 | 1996-02-14 | 富士通株式会社 | 半導体記憶装置 |
| JPS63146461A (ja) * | 1986-12-10 | 1988-06-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPS63239969A (ja) * | 1987-03-27 | 1988-10-05 | Sony Corp | メモリ装置 |
| DE3856528T2 (de) * | 1987-06-17 | 2002-12-05 | Fujitsu Ltd | Dynamisches Speicherbauteil mit wahlfreiem Zugriff und Verfahren zu seiner Herstellung |
| JP2674085B2 (ja) * | 1988-05-18 | 1997-11-05 | 富士通株式会社 | ダイナミック型半導体記憶装置及びその製造方法 |
| DE3916228C2 (de) * | 1988-05-18 | 1995-06-22 | Toshiba Kawasaki Kk | Halbleiterspeichervorrichtung mit Stapelkondensatorzellenstruktur und Verfahren zu ihrer Herstellung |
| JPH0276258A (ja) * | 1988-09-13 | 1990-03-15 | Fujitsu Ltd | 半導体記憶装置 |
| JPH0294471A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| JPH02106958A (ja) * | 1988-10-17 | 1990-04-19 | Hitachi Ltd | 半導体装置 |
| EP0370407A1 (en) * | 1988-11-18 | 1990-05-30 | Nec Corporation | Semiconductor memory device of one transistor - one capacitor memory cell type |
| KR920010695B1 (ko) * | 1989-05-19 | 1992-12-12 | 삼성전자 주식회사 | 디램셀 및 그 제조방법 |
| KR910013554A (ko) * | 1989-12-08 | 1991-08-08 | 김광호 | 반도체 장치 및 그 제조방법 |
| KR950000500B1 (ko) * | 1989-08-31 | 1995-01-24 | 금성일렉트론 주식회사 | 디램셀 커패시터 제조방법 및 구조 |
-
1990
- 1990-08-14 KR KR1019900012555A patent/KR930007194B1/ko not_active IP Right Cessation
- 1990-10-24 IT IT02185390A patent/IT1244053B/it active IP Right Grant
- 1990-10-31 NL NL9002376A patent/NL9002376A/nl not_active Application Discontinuation
- 1990-11-01 JP JP29704490A patent/JPH0727978B2/ja not_active Expired - Lifetime
- 1990-11-03 DE DE4034995A patent/DE4034995C2/de not_active Expired - Fee Related
- 1990-11-05 GB GB9023987A patent/GB2247105B/en not_active Expired - Fee Related
- 1990-11-05 FR FR9013681A patent/FR2665982B1/fr not_active Expired - Lifetime
- 1990-11-14 RU SU4831528A patent/RU2127928C1/ru active
- 1990-11-15 CN CN90109275A patent/CN1030631C/zh not_active Expired - Fee Related
-
1991
- 1991-01-04 US US07/637,558 patent/US5124765A/en not_active Expired - Lifetime
-
1995
- 1995-12-21 HK HK189895A patent/HK189895A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0496272A (ja) | 1992-03-27 |
| KR930007194B1 (ko) | 1993-07-31 |
| JPH0727978B2 (ja) | 1995-03-29 |
| CN1059050A (zh) | 1992-02-26 |
| HK189895A (en) | 1995-12-29 |
| GB9023987D0 (en) | 1990-12-19 |
| FR2665982B1 (fr) | 1992-10-30 |
| GB2247105A (en) | 1992-02-19 |
| FR2665982A1 (fr) | 1992-02-21 |
| DE4034995A1 (de) | 1992-02-20 |
| CN1030631C (zh) | 1996-01-03 |
| KR920005349A (ko) | 1992-03-28 |
| IT1244053B (it) | 1994-07-05 |
| GB2247105B (en) | 1995-04-05 |
| IT9021853A0 (it) | 1990-10-24 |
| RU2127928C1 (ru) | 1999-03-20 |
| US5124765A (en) | 1992-06-23 |
| DE4034995C2 (de) | 1995-11-23 |
| IT9021853A1 (it) | 1992-04-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |