NL1011381C2 - Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. - Google Patents
Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. Download PDFInfo
- Publication number
- NL1011381C2 NL1011381C2 NL1011381A NL1011381A NL1011381C2 NL 1011381 C2 NL1011381 C2 NL 1011381C2 NL 1011381 A NL1011381 A NL 1011381A NL 1011381 A NL1011381 A NL 1011381A NL 1011381 C2 NL1011381 C2 NL 1011381C2
- Authority
- NL
- Netherlands
- Prior art keywords
- photodiode
- semiconductor layer
- region
- impurity region
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000012535 impurity Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 39
- 238000005468 ion implantation Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 13
- 238000011109 contamination Methods 0.000 claims description 5
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- 230000035945 sensitivity Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 238000012545 processing Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101000689143 Haloferax volcanii (strain ATCC 29605 / DSM 3757 / JCM 8879 / NBRC 14742 / NCIMB 2012 / VKM B-1768 / DS2) Phosphomevalonate decarboxylase Proteins 0.000 description 1
- 101000864342 Homo sapiens Tyrosine-protein kinase BTK Proteins 0.000 description 1
- 101000621427 Homo sapiens Wiskott-Aldrich syndrome protein Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 102100029823 Tyrosine-protein kinase BTK Human genes 0.000 description 1
- 102100023034 Wiskott-Aldrich syndrome protein Human genes 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19980006687 | 1998-02-28 | ||
| KR19980006687 | 1998-02-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL1011381A1 NL1011381A1 (nl) | 1999-09-01 |
| NL1011381C2 true NL1011381C2 (nl) | 2000-02-15 |
Family
ID=19534037
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1011381A NL1011381C2 (nl) | 1998-02-28 | 1999-02-24 | Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. |
| NL1014309A NL1014309C2 (nl) | 1998-02-28 | 2000-02-07 | CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1014309A NL1014309C2 (nl) | 1998-02-28 | 2000-02-07 | CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6184055B1 (de) |
| JP (1) | JP4390896B2 (de) |
| KR (1) | KR100278285B1 (de) |
| CN (2) | CN1171315C (de) |
| DE (1) | DE19908457B4 (de) |
| FR (2) | FR2775541B1 (de) |
| GB (1) | GB2334817B (de) |
| NL (2) | NL1011381C2 (de) |
| TW (1) | TW457644B (de) |
Families Citing this family (149)
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| EP2287917B1 (de) * | 1999-02-25 | 2016-05-25 | Canon Kabushiki Kaisha | Lichtempfangendes Element und photoelektrische Umwandlungsanordnung |
| AU3511400A (en) * | 1999-03-01 | 2000-09-21 | Photobit Corporation | Active pixel sensor with fully-depleted buried photoreceptor |
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Also Published As
| Publication number | Publication date |
|---|---|
| GB2334817A (en) | 1999-09-01 |
| FR2779870B1 (fr) | 2005-05-13 |
| FR2775541A1 (fr) | 1999-09-03 |
| CN100377362C (zh) | 2008-03-26 |
| CN1231516A (zh) | 1999-10-13 |
| KR100278285B1 (ko) | 2001-01-15 |
| NL1014309A1 (nl) | 2000-02-29 |
| FR2779870A1 (fr) | 1999-12-17 |
| US6180969B1 (en) | 2001-01-30 |
| GB2334817B (en) | 2003-07-30 |
| DE19908457A1 (de) | 1999-09-02 |
| TW457644B (en) | 2001-10-01 |
| FR2775541B1 (fr) | 2002-08-02 |
| KR19990072885A (ko) | 1999-09-27 |
| GB9904689D0 (en) | 1999-04-21 |
| JP4390896B2 (ja) | 2009-12-24 |
| JPH11317512A (ja) | 1999-11-16 |
| DE19908457B4 (de) | 2013-11-28 |
| CN1171315C (zh) | 2004-10-13 |
| NL1011381A1 (nl) | 1999-09-01 |
| US6184055B1 (en) | 2001-02-06 |
| CN1534790A (zh) | 2004-10-06 |
| NL1014309C2 (nl) | 2004-01-27 |
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