KR100606918B1 - 버티컬 씨모스 이미지 센서의 핫 픽셀 및 그 제조방법 - Google Patents
버티컬 씨모스 이미지 센서의 핫 픽셀 및 그 제조방법 Download PDFInfo
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- KR100606918B1 KR100606918B1 KR1020040116427A KR20040116427A KR100606918B1 KR 100606918 B1 KR100606918 B1 KR 100606918B1 KR 1020040116427 A KR1020040116427 A KR 1020040116427A KR 20040116427 A KR20040116427 A KR 20040116427A KR 100606918 B1 KR100606918 B1 KR 100606918B1
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- epitaxial layer
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- image sensor
- cmos image
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000002955 isolation Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 3
- 238000000407 epitaxy Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (4)
- 반도체 기판에 형성된 제 1 광감지 소자와,상기 제 1 광감지 소자를 포함하는 반도체 기판 상에 형성되는 제 1 에피층과,상기 제 1 에피층에 형성된 제 2 광감지 소자와,상기 제 2 광감지 소자를 포함하는 상기 제 1 에피층 상에 형성된 제 2 에피층과,상기 제 2 광감지 소자의 양측의 상기 제 1 에피층과 상기 제 2 에피층에 형성된 격리영역의 절연막을 포함하여 이루어진 것을 특징으로 버티컬 씨모스 이미지 센서의 핫 픽셀.
- 제 1 항에 있어서, 상기 제 1 광감지 소자 측면의 상기 반도체 기판과 상기 제 1 에피층에 걸쳐서 형성된 제 1 플러그와 상기 제 2 광감지 소자 측면의 상기 제 2 에피층에 형성된 제 2 플러그를 더 포함하는 것을 특징으로 하는 버티컬 씨모스 이미지 센서의 핫 픽셀.
- 반도체 기판에 제 1 광감지 소자를 형성하는 단계;상기 제 1 광감지 소자를 포함하는 반도체 기판 상에 제 1 에피층을 형성하는 단계;상기 제 1 에피층 상에 제 1 절연막을 형성하는 단계;격리영역의 상기 제 1 절연막과 상기 제 1 에피층을 식각하여 개구영역을 형성하는 단계;상기 개구영역에 제 2 절연막을 충진하고 상기 제 1 절연막을 제거하는 단계;상기 제 1 에피층상에 제 2 광감지 소자를 형성하는 단계;상기 제 2 광감지 소자를 포함한 제 1 에피층에 제 2 에피층을 형성하는 단계를 포함하는 것을 특징으로 하는 버티컬 씨모스 이미지 센서의 핫 픽셀 제조방법.
- 제 3 항에 있어서, 상기 제 1 에피층에 제 1 광감지 소자와 연결시키는 제 1 플러그를 형성하는 단계와 상기 제 2 에피층에 제 2 광감지 소자와 연결시키는 제 2 플러그를 형성하는 단계를 더 포함하는 것을 특징으로 하는 버티컬 씨모스 이미지 센서의 핫 픽셀 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040116427A KR100606918B1 (ko) | 2004-12-30 | 2004-12-30 | 버티컬 씨모스 이미지 센서의 핫 픽셀 및 그 제조방법 |
CNB2005100974940A CN100461436C (zh) | 2004-12-30 | 2005-12-28 | Cmos图像传感器及其制造方法 |
US11/320,467 US7358563B2 (en) | 2004-12-30 | 2005-12-29 | CMOS image sensor and method for fabricating the same |
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KR1020040116427A KR100606918B1 (ko) | 2004-12-30 | 2004-12-30 | 버티컬 씨모스 이미지 센서의 핫 픽셀 및 그 제조방법 |
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KR20060077537A KR20060077537A (ko) | 2006-07-05 |
KR100606918B1 true KR100606918B1 (ko) | 2006-08-01 |
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KR1020040116427A KR100606918B1 (ko) | 2004-12-30 | 2004-12-30 | 버티컬 씨모스 이미지 센서의 핫 픽셀 및 그 제조방법 |
Country Status (3)
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US (1) | US7358563B2 (ko) |
KR (1) | KR100606918B1 (ko) |
CN (1) | CN100461436C (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100937670B1 (ko) | 2007-12-28 | 2010-01-19 | 주식회사 동부하이텍 | 씨모스(cmos) 이미지 센서의 제조방법 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100802295B1 (ko) * | 2006-11-30 | 2008-02-11 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100850859B1 (ko) * | 2006-12-21 | 2008-08-06 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
KR100851751B1 (ko) * | 2006-12-27 | 2008-08-11 | 동부일렉트로닉스 주식회사 | 이미지 센서 제조 방법 |
KR100929349B1 (ko) * | 2007-01-30 | 2009-12-03 | 삼성전자주식회사 | 유기물 컬러 필터를 포함하지 않는 컬러 픽셀, 이미지 센서, 및 컬러 보간방법 |
US20080258187A1 (en) * | 2007-04-18 | 2008-10-23 | Ladd John W | Methods, systems and apparatuses for the design and use of imager sensors |
KR100954918B1 (ko) * | 2008-06-03 | 2010-04-27 | 주식회사 동부하이텍 | 이미지센서의 제조방법 |
US9391101B2 (en) | 2013-11-05 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor pickup region layout |
JP2017103408A (ja) | 2015-12-04 | 2017-06-08 | 株式会社ジャパンディスプレイ | 表示装置 |
CN114122041B (zh) * | 2022-01-27 | 2022-03-29 | 广州粤芯半导体技术有限公司 | 图像传感器、其制备方法及电子设备 |
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US5162887A (en) * | 1988-10-31 | 1992-11-10 | Texas Instruments Incorporated | Buried junction photodiode |
KR100278285B1 (ko) * | 1998-02-28 | 2001-01-15 | 김영환 | 씨모스 이미지센서 및 그 제조방법 |
US6727521B2 (en) * | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
JP2001284568A (ja) * | 2000-03-31 | 2001-10-12 | Sharp Corp | 固体撮像装置 |
JP2003142672A (ja) * | 2001-10-31 | 2003-05-16 | Mitsubishi Electric Corp | 固体イメージセンサ及び固体イメージセンサの製造方法 |
US6841816B2 (en) * | 2002-03-20 | 2005-01-11 | Foveon, Inc. | Vertical color filter sensor group with non-sensor filter and method for fabricating such a sensor group |
US6818930B2 (en) * | 2002-11-12 | 2004-11-16 | Micron Technology, Inc. | Gated isolation structure for imagers |
US7078260B2 (en) * | 2003-12-31 | 2006-07-18 | Dongbu Electronics Co., Ltd. | CMOS image sensors and methods for fabricating the same |
KR100672664B1 (ko) * | 2004-12-29 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 버티컬 씨모스 이미지 센서의 제조방법 |
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2004
- 2004-12-30 KR KR1020040116427A patent/KR100606918B1/ko active IP Right Grant
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2005
- 2005-12-28 CN CNB2005100974940A patent/CN100461436C/zh active Active
- 2005-12-29 US US11/320,467 patent/US7358563B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100937670B1 (ko) | 2007-12-28 | 2010-01-19 | 주식회사 동부하이텍 | 씨모스(cmos) 이미지 센서의 제조방법 |
Also Published As
Publication number | Publication date |
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CN1819228A (zh) | 2006-08-16 |
KR20060077537A (ko) | 2006-07-05 |
US7358563B2 (en) | 2008-04-15 |
US20060145221A1 (en) | 2006-07-06 |
CN100461436C (zh) | 2009-02-11 |
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