NL1014309A1 - CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. - Google Patents

CMOS beeldsensor en werkwijze voor het vervaardigen daarvan.

Info

Publication number
NL1014309A1
NL1014309A1 NL1014309A NL1014309A NL1014309A1 NL 1014309 A1 NL1014309 A1 NL 1014309A1 NL 1014309 A NL1014309 A NL 1014309A NL 1014309 A NL1014309 A NL 1014309A NL 1014309 A1 NL1014309 A1 NL 1014309A1
Authority
NL
Netherlands
Prior art keywords
manufacture
image sensor
cmos image
cmos
sensor
Prior art date
Application number
NL1014309A
Other languages
English (en)
Other versions
NL1014309C2 (nl
Inventor
Woodward Yang
Ju Il Lee
Nan Yi Lee
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19534037&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NL1014309(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1014309A1 publication Critical patent/NL1014309A1/nl
Application granted granted Critical
Publication of NL1014309C2 publication Critical patent/NL1014309C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
NL1014309A 1998-02-28 2000-02-07 CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. NL1014309C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19980006687 1998-02-28
KR19980006687 1998-02-28

Publications (2)

Publication Number Publication Date
NL1014309A1 true NL1014309A1 (nl) 2000-02-29
NL1014309C2 NL1014309C2 (nl) 2004-01-27

Family

ID=19534037

Family Applications (2)

Application Number Title Priority Date Filing Date
NL1011381A NL1011381C2 (nl) 1998-02-28 1999-02-24 Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan.
NL1014309A NL1014309C2 (nl) 1998-02-28 2000-02-07 CMOS beeldsensor en werkwijze voor het vervaardigen daarvan.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL1011381A NL1011381C2 (nl) 1998-02-28 1999-02-24 Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan.

Country Status (9)

Country Link
US (2) US6184055B1 (nl)
JP (1) JP4390896B2 (nl)
KR (1) KR100278285B1 (nl)
CN (2) CN1171315C (nl)
DE (1) DE19908457B4 (nl)
FR (2) FR2775541B1 (nl)
GB (1) GB2334817B (nl)
NL (2) NL1011381C2 (nl)
TW (1) TW457644B (nl)

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* Cited by examiner, † Cited by third party
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US6180969B1 (en) 2001-01-30
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FR2775541A1 (fr) 1999-09-03
NL1014309C2 (nl) 2004-01-27
DE19908457A1 (de) 1999-09-02
FR2779870B1 (fr) 2005-05-13
NL1011381A1 (nl) 1999-09-01
KR100278285B1 (ko) 2001-01-15
US6184055B1 (en) 2001-02-06
NL1011381C2 (nl) 2000-02-15
DE19908457B4 (de) 2013-11-28
CN1534790A (zh) 2004-10-06
JP4390896B2 (ja) 2009-12-24
CN100377362C (zh) 2008-03-26
FR2779870A1 (fr) 1999-12-17
KR19990072885A (ko) 1999-09-27
FR2775541B1 (fr) 2002-08-02
CN1231516A (zh) 1999-10-13
GB2334817A (en) 1999-09-01
JPH11317512A (ja) 1999-11-16

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