ATE507585T1 - Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden - Google Patents

Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden

Info

Publication number
ATE507585T1
ATE507585T1 AT01976306T AT01976306T ATE507585T1 AT E507585 T1 ATE507585 T1 AT E507585T1 AT 01976306 T AT01976306 T AT 01976306T AT 01976306 T AT01976306 T AT 01976306T AT E507585 T1 ATE507585 T1 AT E507585T1
Authority
AT
Austria
Prior art keywords
cmos
photodiodes
active
well
mosfets
Prior art date
Application number
AT01976306T
Other languages
English (en)
Inventor
Carlos J R P Augusto
Lynn Forester
Original Assignee
Quantum Semiconductor Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Semiconductor Llc filed Critical Quantum Semiconductor Llc
Application granted granted Critical
Publication of ATE507585T1 publication Critical patent/ATE507585T1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Luminescent Compositions (AREA)
AT01976306T 2000-10-19 2001-10-12 Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden ATE507585T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24155100P 2000-10-19 2000-10-19
PCT/EP2001/011817 WO2002033755A2 (en) 2000-10-19 2001-10-12 Method of fabricating heterojunction photodiodes integrated with cmos

Publications (1)

Publication Number Publication Date
ATE507585T1 true ATE507585T1 (de) 2011-05-15

Family

ID=22911152

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01976306T ATE507585T1 (de) 2000-10-19 2001-10-12 Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden

Country Status (8)

Country Link
US (1) US6943051B2 (de)
EP (1) EP1328975B1 (de)
JP (1) JP4376516B2 (de)
CN (1) CN100446264C (de)
AT (1) ATE507585T1 (de)
AU (1) AU2001295618A1 (de)
DE (1) DE60144528D1 (de)
WO (1) WO2002033755A2 (de)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6887773B2 (en) * 2002-06-19 2005-05-03 Luxtera, Inc. Methods of incorporating germanium within CMOS process
US7899339B2 (en) * 2002-07-30 2011-03-01 Amplification Technologies Inc. High-sensitivity, high-resolution detector devices and arrays
JP3795846B2 (ja) * 2002-08-29 2006-07-12 富士通株式会社 半導体装置
US8120079B2 (en) * 2002-09-19 2012-02-21 Quantum Semiconductor Llc Light-sensing device for multi-spectral imaging
WO2004027879A2 (en) * 2002-09-19 2004-04-01 Quantum Semiconductor Llc Light-sensing device
DE10252878A1 (de) 2002-11-12 2004-06-03 X-Fab Semiconductor Foundries Ag In BiCMOS-Technologie monolithisch integrierte verbesserte vertikale pin-Fotodiode
US7076124B2 (en) * 2002-12-20 2006-07-11 Avago Technologies, Ltd. Integrated multichannel laser driver and photodetector receiver
EP1465258A1 (de) * 2003-02-21 2004-10-06 STMicroelectronics Limited CMOS bildsensoren
US7164182B2 (en) 2003-07-07 2007-01-16 Micron Technology, Inc. Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
JP3865728B2 (ja) * 2003-12-05 2007-01-10 シャープ株式会社 閾値電圧変調方式のｍｏｓ型固体撮像素子およびその製造方法
DE10357135B4 (de) 2003-12-06 2007-01-04 X-Fab Semiconductor Foundries Ag Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren
DE102004031606B4 (de) 2004-06-30 2009-03-12 Infineon Technologies Ag Integrierte Schaltungsanordnung mit pin-Diode und Herstellungsverfahren
JP4654623B2 (ja) * 2004-07-08 2011-03-23 ソニー株式会社 固体撮像装置の製造方法
US8183516B2 (en) * 2004-07-28 2012-05-22 Quantum Semiconductor Llc Layouts for the monolithic integration of CMOS and deposited photonic active layers
WO2006010618A1 (en) * 2004-07-28 2006-02-02 Quantum Semiconductor Llc Photonic devices monolithically integrated with cmos
JP4507876B2 (ja) * 2004-12-22 2010-07-21 ソニー株式会社 固体撮像素子
US7456384B2 (en) 2004-12-10 2008-11-25 Sony Corporation Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor
KR100672701B1 (ko) * 2004-12-29 2007-01-22 동부일렉트로닉스 주식회사 씨모스(ｃｍｏｓ) 이미지 센서 및 그의 제조 방법
KR100670539B1 (ko) * 2004-12-30 2007-01-16 매그나칩 반도체 유한회사 단결정 실리콘 성장 방식을 이용한 씨모스 이미지센서제조 방법
US20060157806A1 (en) * 2005-01-18 2006-07-20 Omnivision Technologies, Inc. Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response
KR100736525B1 (ko) * 2005-04-26 2007-07-06 매그나칩 반도체 유한회사 씨모스 이미지 센서의 제조 방법
RU2406181C2 (ru) * 2005-06-10 2010-12-10 Амплификейшн Текнолоджиз, Инк. Детекторные устройства и матрицы с высокой чувствительностью и высокой разрешающей способностью
KR100625944B1 (ko) 2005-06-30 2006-09-18 매그나칩 반도체 유한회사 씨모스 이미지 센서의 포토다이오드 및 그의 제조 방법
KR100746222B1 (ko) * 2005-07-11 2007-08-03 삼성전자주식회사 이미지 센서의 제조방법들
US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
KR100749268B1 (ko) * 2005-11-30 2007-08-13 매그나칩 반도체 유한회사 이미지 센서 및 그 제조방법
KR100790228B1 (ko) * 2005-12-26 2008-01-02 매그나칩 반도체 유한회사 시모스 이미지 센서
KR100718773B1 (ko) * 2005-12-29 2007-05-16 매그나칩 반도체 유한회사 이미지 센서 및 그 제조방법
US7566875B2 (en) * 2006-04-13 2009-07-28 Integrated Micro Sensors Inc. Single-chip monolithic dual-band visible- or solar-blind photodetector
US20080012087A1 (en) * 2006-04-19 2008-01-17 Henri Dautet Bonded wafer avalanche photodiode and method for manufacturing same
US7759650B2 (en) 2006-04-25 2010-07-20 Koninklijke Philips Electronics N.V. Implementation of avalanche photo diodes in (Bi)CMOS processes
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US7916362B2 (en) 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
TWI523209B (zh) 2006-07-03 2016-02-21 Hamamatsu Photonics Kk 光二極體陣列
US8188563B2 (en) * 2006-07-21 2012-05-29 The Regents Of The University Of California Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector
JP2008066402A (ja) * 2006-09-05 2008-03-21 Fujifilm Corp 撮像素子および撮像装置
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US8456410B2 (en) * 2006-12-12 2013-06-04 Intersil Americas Inc. Backlight control using light sensors with infrared suppression
DE112007003037B4 (de) * 2006-12-12 2016-04-28 Intersil Americas Inc. Lichtsensoren mit Infrarotunterdrückung und System zur Hintergrundbeleuchtungssteuerung einen solchen Lichtsensor aufweisend
US8138583B2 (en) * 2007-02-16 2012-03-20 Cree, Inc. Diode having reduced on-resistance and associated method of manufacture
US7482282B2 (en) * 2007-03-26 2009-01-27 International Business Machines Corporation Use of dilute hydrochloric acid in advanced interconnect contact clean in nickel semiconductor technologies
WO2008133016A1 (ja) * 2007-04-13 2008-11-06 Sharp Kabushiki Kaisha 光センサ及び表示装置
KR100863497B1 (ko) * 2007-06-19 2008-10-14 마루엘에스아이 주식회사 이미지 감지 장치, 이미지 신호 처리 방법, 광 감지 소자, 제어 방법 및 화소 어레이
US20090159799A1 (en) * 2007-12-19 2009-06-25 Spectral Instruments, Inc. Color infrared light sensor, camera, and method for capturing images
US8232585B2 (en) 2008-07-24 2012-07-31 Micron Technology, Inc. JFET devices with PIN gate stacks
US8877616B2 (en) 2008-09-08 2014-11-04 Luxtera, Inc. Method and system for monolithic integration of photonics and electronics in CMOS processes
US8211732B2 (en) 2008-09-11 2012-07-03 Omnivision Technologies, Inc. Image sensor with raised photosensitive elements
WO2010110888A1 (en) * 2009-03-23 2010-09-30 The Board Of Trustees Of The Leland Stanford Junior University Quantum confinement solar cell fabriacated by atomic layer deposition
KR101633953B1 (ko) * 2009-04-15 2016-06-27 솔 발테익스 에이비 나노와이어를 가지는 다중-접합 광전지
US8436288B2 (en) * 2009-04-24 2013-05-07 Quantum Semiconductor Llc Image sensors with photo-current mode and solar cell operation
WO2010147532A1 (en) * 2009-06-17 2010-12-23 Gunnar Malm Microbolometer semiconductor material
WO2010151888A1 (en) * 2009-06-26 2010-12-29 Amplification Technologies, Inc. Low-level signal detection by semiconductor avalanche amplification
JP5387212B2 (ja) * 2009-07-31 2014-01-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
KR20160142897A (ko) 2010-03-19 2016-12-13 인비사지 테크놀로지스, 인크. 감지성 반도체 다이오드를 채용한 이미지 센서
JP5299333B2 (ja) * 2010-03-23 2013-09-25 ソニー株式会社 固体撮像素子
US8916947B2 (en) 2010-06-08 2014-12-23 Invisage Technologies, Inc. Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
GB201014843D0 (en) 2010-09-08 2010-10-20 Univ Edinburgh Single photon avalanche diode for CMOS circuits
JP5745866B2 (ja) * 2011-01-14 2015-07-08 東芝情報システム株式会社 固体撮像素子
JP2012156310A (ja) * 2011-01-26 2012-08-16 Sony Corp 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP2014514733A (ja) * 2011-03-10 2014-06-19 サイオニクス、インク． ３次元センサ、システム、および関連する方法
JP2012231026A (ja) * 2011-04-26 2012-11-22 Toshiba Corp 固体撮像装置
US8399949B2 (en) 2011-06-30 2013-03-19 Micron Technology, Inc. Photonic systems and methods of forming photonic systems
US8368159B2 (en) 2011-07-08 2013-02-05 Excelitas Canada, Inc. Photon counting UV-APD
US9355910B2 (en) * 2011-12-13 2016-05-31 GlobalFoundries, Inc. Semiconductor device with transistor local interconnects
US8581348B2 (en) * 2011-12-13 2013-11-12 GlobalFoundries, Inc. Semiconductor device with transistor local interconnects
DE102012214690B4 (de) 2012-08-17 2015-12-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hybrider Detektor zum Detektieren elektromagnetischer Strahlung und Verfahren zu seiner Herstellung
SG2013075379A (en) 2012-10-08 2014-05-29 Agency Science Tech & Res P-i-n photodiode
US9887309B2 (en) 2012-12-13 2018-02-06 The Board of Regents of the University of Okalahoma Photovoltaic lead-salt semiconductor detectors
US10109754B2 (en) * 2012-12-13 2018-10-23 The Board Of Regents Of The University Of Oklahoma Photovoltaic lead-salt detectors
WO2015047492A2 (en) * 2013-06-20 2015-04-02 The Board Of Regents Of The University Of Oklahoma Photovoltaic lead-salt detectors
CN103199100B (zh) * 2013-04-13 2015-12-09 湘潭大学 一种单芯片集成用硅基复合增强型光电探测器的制作方法
US9941316B2 (en) 2014-06-10 2018-04-10 Invisage Technologies, Inc. Multi-terminal optoelectronic devices for light detection
JP6437284B2 (ja) * 2014-11-20 2018-12-12 国立大学法人 東京大学 アバランシェ受光器
WO2016085880A1 (en) * 2014-11-24 2016-06-02 Artilux, Inc. Monolithic integration techniques for fabricating photodetectors with transistors on same substrate
US20160255323A1 (en) 2015-02-26 2016-09-01 Dual Aperture International Co. Ltd. Multi-Aperture Depth Map Using Blur Kernels and Down-Sampling
MY174333A (en) * 2015-10-14 2020-04-08 Hoon Kim Image sensor with solar cell function
CN107293559A (zh) * 2016-04-05 2017-10-24 格科微电子（上海）有限公司 Rgbir图像传感器
CN107346774A (zh) * 2016-05-05 2017-11-14 上海芯晨科技有限公司 一种单片集成的紫外焦平面器件及其制备方法
US11346772B2 (en) 2018-01-16 2022-05-31 Ows Agri Limited Gas concentration measurement apparatus and techniques
US11353395B2 (en) * 2018-01-23 2022-06-07 Ows Agri Limited System and method for ozone concentration measurement in liquids having a negative scaling index
WO2019147220A1 (en) 2018-01-23 2019-08-01 Ows Agri Limited System and method for ozone concentration measurement in ice
WO2019147234A1 (en) 2018-01-24 2019-08-01 Ows Agri Limited System and method for ozone concentration in liquids having a positive scaling factor
US11883551B2 (en) 2018-01-30 2024-01-30 Ows Agri Limited Systems and methods for bulk sterilization using ozone
US11712052B2 (en) 2018-02-09 2023-08-01 Ows Agri Limited Systems and methods for continuous flow sterilization
CN110931578B (zh) * 2018-09-20 2024-05-28 台湾积体电路制造股份有限公司 光电探测器及其形成方法
JP7172389B2 (ja) * 2018-09-28 2022-11-16 株式会社ニコン 撮像素子、撮像装置、及び、撮像素子の製造方法
US10840337B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Method for making a FINFET having reduced contact resistance
US10840335B2 (en) * 2018-11-16 2020-11-17 Atomera Incorporated Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance
US10840336B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods
US10818755B2 (en) 2018-11-16 2020-10-27 Atomera Incorporated Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
US10847618B2 (en) * 2018-11-16 2020-11-24 Atomera Incorporated Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance
US10854717B2 (en) 2018-11-16 2020-12-01 Atomera Incorporated Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance
CN109509808B (zh) * 2018-11-21 2020-01-14 温州大学 一种SiC/Si异质结侧向型光敏IMPATT二极管及其制备方法
CN112447775A (zh) * 2019-08-28 2021-03-05 天津大学青岛海洋技术研究院 一种提高量子效率的cmos图像传感器像素制作方法
JP2021118551A (ja) * 2020-01-22 2021-08-10 ソニーセミコンダクタソリューションズ株式会社 撮像装置、センサ装置及び電子機器
CN113764443B (zh) 2020-06-05 2024-01-02 联华电子股份有限公司 感光元件
CN112510058A (zh) * 2020-12-16 2021-03-16 中山大学 一种集成光电传感器及其制备方法
US11482562B2 (en) 2020-12-30 2022-10-25 Applied Materials, Inc. Methods for forming image sensors
US12074243B1 (en) 2023-08-24 2024-08-27 Amplification Technologies, Corp. Method for fabricating high-sensitivity photodetectors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
JPH05198787A (ja) * 1991-11-08 1993-08-06 Canon Inc 固体撮像装置及びその製造方法
JPH06151801A (ja) * 1992-11-13 1994-05-31 Canon Inc 光電変換装置及び光電変換装置の製造方法
US5686734A (en) * 1993-01-22 1997-11-11 Canon Kabushiki Kaisha Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device
US6091127A (en) * 1997-04-02 2000-07-18 Raytheon Company Integrated infrared detection system
KR100278285B1 (ko) * 1998-02-28 2001-01-15 김영환 씨모스 이미지센서 및 그 제조방법
US6058229A (en) * 1998-10-05 2000-05-02 Lucent Technologies Inc. Long wavelength InGaAs photogenerator

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EP1328975A2 (de) 2003-07-23
JP4376516B2 (ja) 2009-12-02
DE60144528D1 (de) 2011-06-09
US6943051B2 (en) 2005-09-13
AU2001295618A1 (en) 2002-04-29
WO2002033755A2 (en) 2002-04-25
EP1328975B1 (de) 2011-04-27
WO2002033755A3 (en) 2002-09-06
CN100446264C (zh) 2008-12-24
US20040097021A1 (en) 2004-05-20
JP2004512686A (ja) 2004-04-22
CN1481585A (zh) 2004-03-10

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