WO2008133016A1 - 光センサ及び表示装置 - Google Patents

光センサ及び表示装置 Download PDF

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Publication number
WO2008133016A1
WO2008133016A1 PCT/JP2008/057068 JP2008057068W WO2008133016A1 WO 2008133016 A1 WO2008133016 A1 WO 2008133016A1 JP 2008057068 W JP2008057068 W JP 2008057068W WO 2008133016 A1 WO2008133016 A1 WO 2008133016A1
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WO
WIPO (PCT)
Prior art keywords
optical sensor
type semiconductor
photodiodes
display
silicon film
Prior art date
Application number
PCT/JP2008/057068
Other languages
English (en)
French (fr)
Inventor
Hiromi Katoh
Masakazu Satoh
Benjamin James Hadwen
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to CN2008800117183A priority Critical patent/CN101657902B/zh
Priority to US12/595,737 priority patent/US20100127280A1/en
Publication of WO2008133016A1 publication Critical patent/WO2008133016A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/58—Arrangements comprising a monitoring photodetector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

　暗電流によるノイズの発生を抑制しつつ、小型化を図り得る光センサ、及びそれを備えた表示装置を提供する。同一のシリコン膜（８）に形成された複数のフォトダイオード（９～１１）を備えた光センサを用いる。フォトダイオード（９～１１）は、それぞれ、シリコン膜（８）に形成されたｐ型の半導体領域（９ａ、１０ａ、１１ａ）及びｎ型の半導体領域（９ｃ、１０ｃ、１１ｃ）を有する。更に、フォトダイオード（９～１１）は、それぞれの順方向が互いに揃うように直列に配置される。隣接する二つのフォトダイオードにおいて、一方のｎ型の半導体領域と他方のｐ型の半導体領域とはシリコン膜の厚み方向において互いに重なるように形成される。
PCT/JP2008/057068 2007-04-13 2008-04-10 光センサ及び表示装置 WO2008133016A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800117183A CN101657902B (zh) 2007-04-13 2008-04-10 光传感器和显示装置
US12/595,737 US20100127280A1 (en) 2007-04-13 2008-04-10 Photo sensor and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-106269 2007-04-13
JP2007106269 2007-04-13

Publications (1)

Publication Number Publication Date
WO2008133016A1 true WO2008133016A1 (ja) 2008-11-06

Family

ID=39925475

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057068 WO2008133016A1 (ja) 2007-04-13 2008-04-10 光センサ及び表示装置

Country Status (3)

Country Link
US (1) US20100127280A1 (ja)
CN (1) CN101657902B (ja)
WO (1) WO2008133016A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120032140A1 (en) * 2009-09-18 2012-02-09 Jingjing Li Light-emitting diode including a metal-dielectric-metal structure
US20130076712A1 (en) * 2011-09-22 2013-03-28 Dong Zheng Distributed Light Sensors for Ambient Light Detection
US9477263B2 (en) 2011-10-27 2016-10-25 Apple Inc. Electronic device with chip-on-glass ambient light sensors
FR3004000B1 (fr) * 2013-03-28 2016-07-15 Aledia Dispositif electroluminescent avec capteur integre et procede de controle de l'emission du dispositif

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175537A (ja) * 1991-12-20 1993-07-13 Rohm Co Ltd フォトダイオードアレイおよびその製造法
JP2002151702A (ja) * 2000-11-15 2002-05-24 Seiko Epson Corp 半導体装置及びその製造方法並びに電子機器
JP2005079438A (ja) * 2003-09-02 2005-03-24 Toshiba Matsushita Display Technology Co Ltd フォトダイオードおよびこの駆動方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236831A (en) * 1979-07-27 1980-12-02 Honeywell Inc. Semiconductor apparatus
US4754132A (en) * 1987-04-24 1988-06-28 American Telephone And Telegraph Company, At&T Bell Laboratories Symmetric optical device with quantum well absorption
US4952791A (en) * 1988-12-12 1990-08-28 At&T Bell Laboratories Monolithic apparatus comprising optically interconnected quantum well devices
US5177628A (en) * 1990-04-24 1993-01-05 The University Of Colorado Foundation, Inc. Self-powered optically addressed spatial light modulator
US5492843A (en) * 1993-07-31 1996-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device and method of processing substrate
JP3254928B2 (ja) * 1994-09-12 2002-02-12 日産自動車株式会社 レーダ用位置検出センサおよびこれを用いたレーダ
KR100541712B1 (ko) * 1996-01-18 2006-06-13 매그나칩 반도체 유한회사 선형ccd촬상소자
JP4604301B2 (ja) * 1999-04-28 2011-01-05 株式会社デンソー 光センサ
US6879014B2 (en) * 2000-03-20 2005-04-12 Aegis Semiconductor, Inc. Semitransparent optical detector including a polycrystalline layer and method of making
JP2002009328A (ja) * 2000-06-21 2002-01-11 Mitsutoyo Corp 受光素子アレイ及びその製造方法
JP2002057312A (ja) * 2000-08-08 2002-02-22 Denso Corp 光検出センサおよびその製造方法
ATE507585T1 (de) * 2000-10-19 2011-05-15 Quantum Semiconductor Llc Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden
US7205641B2 (en) * 2000-12-28 2007-04-17 Industrial Technology Research Institute Polydiode structure for photo diode
WO2002071104A2 (en) * 2001-03-02 2002-09-12 Innovative Solutions & Support, Inc. Image display generator for a head-up display
US6756616B2 (en) * 2001-08-30 2004-06-29 Micron Technology, Inc. CMOS imager and method of formation
JP2003249675A (ja) * 2002-02-26 2003-09-05 Sumitomo Electric Ind Ltd 受光素子アレイ
JP3912226B2 (ja) * 2002-08-26 2007-05-09 住友電気工業株式会社 ｐ型ＧａＡｓ基板ＺｎＳｅ系フォトダイオードおよびｐ型ＧａＡｓ基板ＺｎＳｅ系アバランシェフォトダイオード
US7538403B2 (en) * 2004-09-20 2009-05-26 Emcore Corporation PIN diode structure with zinc diffusion region
US7439599B2 (en) * 2004-09-27 2008-10-21 Emcore Corporation PIN photodiode structure and fabrication process for reducing dielectric delamination
KR100685872B1 (ko) * 2004-12-14 2007-02-23 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
JP2006186261A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2006294871A (ja) * 2005-04-11 2006-10-26 Matsushita Electric Ind Co Ltd 固体撮像装置
JPWO2006117956A1 (ja) * 2005-04-28 2008-12-18 シャープ株式会社 液晶表示装置
WO2006118028A1 (ja) * 2005-04-28 2006-11-09 Sharp Kabushiki Kaisha 液晶表示装置
WO2006129428A1 (ja) * 2005-05-31 2006-12-07 Sharp Kabushiki Kaisha フォトダイオード及び表示装置
JP2006339533A (ja) * 2005-06-03 2006-12-14 Sanyo Electric Co Ltd 半導体装置
US7427734B2 (en) * 2005-10-18 2008-09-23 Digital Imaging Systems Gmbh Multiple photosensor pixel
US7964928B2 (en) * 2005-11-22 2011-06-21 Stmicroelectronics S.A. Photodetector with an improved resolution
WO2008010292A1 (fr) * 2006-07-21 2008-01-24 Renesas Technology Corp. Dispositif de conversion photoélectrique et dispositif d'imagerie

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175537A (ja) * 1991-12-20 1993-07-13 Rohm Co Ltd フォトダイオードアレイおよびその製造法
JP2002151702A (ja) * 2000-11-15 2002-05-24 Seiko Epson Corp 半導体装置及びその製造方法並びに電子機器
JP2005079438A (ja) * 2003-09-02 2005-03-24 Toshiba Matsushita Display Technology Co Ltd フォトダイオードおよびこの駆動方法

Also Published As

Publication number Publication date
CN101657902B (zh) 2012-01-11
US20100127280A1 (en) 2010-05-27
CN101657902A (zh) 2010-02-24

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