WO2007086352A8 - 撮像素子及びカメラモジュール - Google Patents

撮像素子及びカメラモジュール

Info

Publication number
WO2007086352A8
WO2007086352A8 PCT/JP2007/050936 JP2007050936W WO2007086352A8 WO 2007086352 A8 WO2007086352 A8 WO 2007086352A8 JP 2007050936 W JP2007050936 W JP 2007050936W WO 2007086352 A8 WO2007086352 A8 WO 2007086352A8
Authority
WO
WIPO (PCT)
Prior art keywords
photo diodes
electric charge
imaging element
substrate
imaging
Prior art date
Application number
PCT/JP2007/050936
Other languages
English (en)
French (fr)
Other versions
WO2007086352A1 (ja
Inventor
Katsuhide Setoguchi
Original Assignee
Kyocera Corp
Katsuhide Setoguchi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp, Katsuhide Setoguchi filed Critical Kyocera Corp
Priority to US12/162,329 priority Critical patent/US8119965B2/en
Priority to JP2007555929A priority patent/JP4907557B2/ja
Publication of WO2007086352A1 publication Critical patent/WO2007086352A1/ja
Publication of WO2007086352A8 publication Critical patent/WO2007086352A8/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　撮像範囲内の明暗差が大きい場合でも、適切なダイナミックレンジで撮像できる撮像素子を提供する。撮像素子１は、基板２と、複数の画素３に対応して基板２に配列され、第１主面Ｓ１に入射する光を受光し、受光量に応じた電荷を生じる複数の第１フォトダイオード５と、複数の画素３に対応して複数の第１フォトダイオード５の背後側の位置にて配列され、第１主面Ｓ１に入射して複数の第１フォトダイオード５及び基板２の少なくとも一方を透過した光を受光し、受光量に応じた電荷を生じる複数の第２フォトダイオード６とを備える。複数の第１フォトダイオード５にて生じた電荷に基づく電気信号には、同一画素の複数の第２フォトダイオード６にて生じた電荷に基づく電気信号が加算される。
PCT/JP2007/050936 2006-01-25 2007-01-23 撮像素子及びカメラモジュール WO2007086352A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/162,329 US8119965B2 (en) 2006-01-25 2007-01-23 Image sensor having two light receiving elements and camera module having the image sensor
JP2007555929A JP4907557B2 (ja) 2006-01-25 2007-01-23 撮像素子及びカメラモジュール

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006016460 2006-01-25
JP2006-016460 2006-01-25

Publications (2)

Publication Number Publication Date
WO2007086352A1 WO2007086352A1 (ja) 2007-08-02
WO2007086352A8 true WO2007086352A8 (ja) 2008-09-18

Family

ID=38309142

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/050936 WO2007086352A1 (ja) 2006-01-25 2007-01-23 撮像素子及びカメラモジュール

Country Status (3)

Country Link
US (1) US8119965B2 (ja)
JP (1) JP4907557B2 (ja)
WO (1) WO2007086352A1 (ja)

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US8076746B2 (en) * 2009-06-26 2011-12-13 Omnivision Technologies, Inc. Back-illuminated image sensors having both frontside and backside photodetectors
JP5554139B2 (ja) * 2010-05-11 2014-07-23 パナソニック株式会社 複合型撮像素子およびそれを備えた撮像装置
GB201102478D0 (en) 2011-02-11 2011-03-30 Isdi Ltd Radiation detector and method
US9294691B2 (en) 2011-09-06 2016-03-22 Sony Corporation Imaging device, imaging apparatus, manufacturing apparatus and manufacturing method
JP2013070030A (ja) * 2011-09-06 2013-04-18 Sony Corp 撮像素子、電子機器、並びに、情報処理装置
JP5755111B2 (ja) * 2011-11-14 2015-07-29 キヤノン株式会社 撮像装置の駆動方法
KR101334099B1 (ko) * 2011-11-17 2013-11-29 (주)실리콘화일 이중 감지 기능을 가지는 기판 적층형 이미지 센서
JP5876289B2 (ja) * 2011-12-28 2016-03-02 浜松ホトニクス株式会社 距離測定装置
JP6041500B2 (ja) * 2012-03-01 2016-12-07 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法、撮像システムの駆動方法
US10134788B2 (en) 2013-09-17 2018-11-20 Omnivision Technologies, Inc. Dual VPIN HDR image sensor pixel
JP6161522B2 (ja) * 2013-11-20 2017-07-12 オリンパス株式会社 撮像素子
GB2525625B (en) 2014-04-29 2017-05-31 Isdi Ltd Device and method
JP6609113B2 (ja) * 2014-06-18 2019-11-20 キヤノン株式会社 撮像装置及びその制御方法
US11947050B2 (en) * 2021-07-07 2024-04-02 Beijing Voyager Technology Co., Ltd. Temperature control through thermal recycle

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Also Published As

Publication number Publication date
US20090008532A1 (en) 2009-01-08
JPWO2007086352A1 (ja) 2009-06-18
US8119965B2 (en) 2012-02-21
WO2007086352A1 (ja) 2007-08-02
JP4907557B2 (ja) 2012-03-28

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