KR970072507A - 수평 방향 반도체 피엔(pn) 접합 어레이 제조방법 - Google Patents

수평 방향 반도체 피엔(pn) 접합 어레이 제조방법 Download PDF

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KR970072507A
KR970072507A KR1019960011000A KR19960011000A KR970072507A KR 970072507 A KR970072507 A KR 970072507A KR 1019960011000 A KR1019960011000 A KR 1019960011000A KR 19960011000 A KR19960011000 A KR 19960011000A KR 970072507 A KR970072507 A KR 970072507A
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민석기
김성일
김은규
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김은영
한국과학기술연구원
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Priority to US08/773,185 priority patent/US5882950A/en
Priority to JP9014881A priority patent/JP3050826B2/ja
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract

본 발명은 유기금속화학증착(MOCVD)법에0 의해 에피층을 성장시킬 때 CCI4또는CBr4가스를 소량 유입시켜 수평 방향으로 PN접합 어레이 구조를 제조할 수 있게 한 수평 방향 반도체 PN접합 어레이 제조방법에 관한 것으로, 종래에는 수평 방향으로서의 PN접합을 형성할 수 없었다. 이러한 점을 감안하여, N형 GaAs 기판 위에 유기금속화학증착 (MOCVD)법으로 P형 에피층을 성장시키되, CCI4또는 CB r4가스를 유입시켜 수평 방향의 P-GaAs/N-GaAs 또는 P-AIGaAs/N-GaAs PN접합 어레이를 제조함으로써 입사된 광이 손실이 거의 없이 PN접합부분에 곧바로 도달되고, 광전소자의 효율을 높이거나 낮은 문턱전류의 레이저 다이오드 또는 도파손실이 작은 광도파로의 제작 등에 응용될 수 있게한 것이다.

Description

수평 방향 반도체 피엔(PN) 접합 어레이 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 수평 방향 PN접합 어레이 구조의 개요도로서, 제1도의 (가)는 반절연 GaAs기판 위에 형성된 P-GaAs/N-GaAs 또는 P-AIGaAs/N-GaAs PN접합 어레이 구조도, 제1도의 (나)는 N형 GaAs기판 위에 형성된P-GaAs/N-GaAs 또는 P-AIGaAs/N-GaAs PN접합 어레이 구조도, 제1도의 (다)는 P형 GaAs 또는 P형 AIGaAs어레이가 N형 GaAs속에 심어져 있는 구조도.

Claims (5)

  1. N형 GaAs기판에 비평면 성장을 이용하여 홈을 형성하는 공정과, 이후 상기 N형 GaAs기판 위에 유기금속화학증착(MOCVD)법으로 P형 에피층을 성장시키되, CCI4및, CBr4중 하나의 가스를 유입시켜 수평 방향의 P-GaAs/N-GaAs 및 P-AIGaAs/N-GaAs중 하나의 PN접합 어레이를 제조하는 공정으로 이루어진 것을 특징으로 하는 수평 방향 PN접합 어레이 제조방법.
  2. 제1항에 있어서, N형 GaAs기판의 홈은 V자 및 U자 모양의 패턴 중 하나의 패턴에 의해 형성하는 것을 특징으로 하는 수평 방향 PN접합 어레이 제조방법.
  3. 제2항에 있어서, N형 GaAs기판의 홈은 N형 GaAs 기판 위에 광 감광제 및 마스크를 사용하여 사진 식각 방법으로 V자 및 U자 모양중 하나의 패턴을 형성하고, 이후 습식 에칭법에 의해 에칭시켜 V자 및 U자 모양중 하나의 모양으로 형성하는 것을 특징으로 하는 수평 방향 PN접합 어레이 제조방법.
  4. 제3항에 있어서, 습식 에칭법의 에칭시에 일정비율의 H2SO4: H2O2: H2O의 용액을 사용하는 것을 특징으로 하는 수평 방향 PN접합 어레이 제조방법.
  5. 제1항 또는 제2항에 있어서, N형 GaAs 기판의 홈에만 P형 GaAs 및 P형 AIGaAs에피층중 하나의 에피층을 형성하는 것을 특징으로 하는 수평 방향 PN접합 어레이 제조방법.
    ※참고사항: 최초출원 내용에 의하여 공개하는 것임.
KR1019960011000A 1996-04-12 1996-04-12 수평 방향 반도체 피엔 접합 어레이 제조방법 KR100203376B1 (ko)

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Application Number Priority Date Filing Date Title
KR1019960011000A KR100203376B1 (ko) 1996-04-12 1996-04-12 수평 방향 반도체 피엔 접합 어레이 제조방법
US08/773,185 US5882950A (en) 1996-04-12 1996-12-27 Fabrication method for horizontal direction semiconductor PN junction array
JP9014881A JP3050826B2 (ja) 1996-04-12 1997-01-29 半導体素子の水平方向ｐｎ接合アレイ製造方法

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KR1019960011000A KR100203376B1 (ko) 1996-04-12 1996-04-12 수평 방향 반도체 피엔 접합 어레이 제조방법

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KR101050878B1 (ko) * 2004-04-14 2011-07-20 엘지디스플레이 주식회사 실리콘 박막 태양전지 및 그 제조방법
KR101325140B1 (ko) * 2007-07-18 2013-11-06 주식회사 뉴파워 프라즈마 수평 배열된 광기전 셀들을 갖는 태양 전지 및 그 제조방법
KR101133412B1 (ko) 2009-07-24 2012-04-09 한양대학교 산학협력단 트렌치가 구비된 기판 상에 형성된 발광다이오드
WO2015149226A1 (zh) * 2014-03-31 2015-10-08 华为技术有限公司 一种掺杂结构及其制作方法、电光调制器

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US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
US5693963A (en) * 1994-09-19 1997-12-02 Kabushiki Kaisha Toshiba Compound semiconductor device with nitride

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KR100203376B1 (ko) 1999-06-15

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