JPS6476782A - Semiconductor light-emitting diode - Google Patents
Semiconductor light-emitting diodeInfo
- Publication number
- JPS6476782A JPS6476782A JP23462887A JP23462887A JPS6476782A JP S6476782 A JPS6476782 A JP S6476782A JP 23462887 A JP23462887 A JP 23462887A JP 23462887 A JP23462887 A JP 23462887A JP S6476782 A JPS6476782 A JP S6476782A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- groove
- insulating film
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain an LED high in fiber coupling output and able to be manufactured with high yield, by constructing a semiconductor light-emitting diode having a double-hetero layer-built structure including an active layer such that it has a linear groove extending in a particular direction with a circular-mesa- type light-emitting section formed within the groove. CONSTITUTION:On an N-type InP substrate 11, there are deposited an N-type InP layer 12, an N-type InGaAsP active layer 13, a P-type InP layer 14 and a P-type InGaAsP contact layer 15 sequentially by the liquid-phase epitaxy. Then, a linear groove 17 extending in the direction <110> is formed by chemical etching while a circular mesa 16 with a diameter of 25mum is also formed within the groove. An insulating film 18 of silicon nitride is deposited on the surface of the groove 17 and P-type InGaAsP contact layer 15. The insulating film on the top surface on the circular mesa 16 is removed by a selective etching process using photoresist. A TiPt film is formed to provide a P-type electrode 19 on that surface from which the insulating film has been removed. Then an AuGeNi film is formed to provide an N-type electrode 21. In this manner, it is possible to decrease short-circuit due to current-voltage characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23462887A JPS6476782A (en) | 1987-09-17 | 1987-09-17 | Semiconductor light-emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23462887A JPS6476782A (en) | 1987-09-17 | 1987-09-17 | Semiconductor light-emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6476782A true JPS6476782A (en) | 1989-03-22 |
Family
ID=16974016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23462887A Pending JPS6476782A (en) | 1987-09-17 | 1987-09-17 | Semiconductor light-emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6476782A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308377A (en) * | 2000-04-25 | 2001-11-02 | Nippon Sheet Glass Co Ltd | Three-terminal light-emitting thyristor and self- scanning light-emitting element array |
-
1987
- 1987-09-17 JP JP23462887A patent/JPS6476782A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308377A (en) * | 2000-04-25 | 2001-11-02 | Nippon Sheet Glass Co Ltd | Three-terminal light-emitting thyristor and self- scanning light-emitting element array |
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