JPS6476782A - Semiconductor light-emitting diode - Google Patents

Semiconductor light-emitting diode

Info

Publication number
JPS6476782A
JPS6476782A JP23462887A JP23462887A JPS6476782A JP S6476782 A JPS6476782 A JP S6476782A JP 23462887 A JP23462887 A JP 23462887A JP 23462887 A JP23462887 A JP 23462887A JP S6476782 A JPS6476782 A JP S6476782A
Authority
JP
Japan
Prior art keywords
type
layer
groove
insulating film
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23462887A
Other languages
Japanese (ja)
Inventor
Toshio Uji
Yoichi Isoda
Hiroki Hirasawa
Kazuo Shigeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23462887A priority Critical patent/JPS6476782A/en
Publication of JPS6476782A publication Critical patent/JPS6476782A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an LED high in fiber coupling output and able to be manufactured with high yield, by constructing a semiconductor light-emitting diode having a double-hetero layer-built structure including an active layer such that it has a linear groove extending in a particular direction with a circular-mesa- type light-emitting section formed within the groove. CONSTITUTION:On an N-type InP substrate 11, there are deposited an N-type InP layer 12, an N-type InGaAsP active layer 13, a P-type InP layer 14 and a P-type InGaAsP contact layer 15 sequentially by the liquid-phase epitaxy. Then, a linear groove 17 extending in the direction <110> is formed by chemical etching while a circular mesa 16 with a diameter of 25mum is also formed within the groove. An insulating film 18 of silicon nitride is deposited on the surface of the groove 17 and P-type InGaAsP contact layer 15. The insulating film on the top surface on the circular mesa 16 is removed by a selective etching process using photoresist. A TiPt film is formed to provide a P-type electrode 19 on that surface from which the insulating film has been removed. Then an AuGeNi film is formed to provide an N-type electrode 21. In this manner, it is possible to decrease short-circuit due to current-voltage characteristics.
JP23462887A 1987-09-17 1987-09-17 Semiconductor light-emitting diode Pending JPS6476782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23462887A JPS6476782A (en) 1987-09-17 1987-09-17 Semiconductor light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23462887A JPS6476782A (en) 1987-09-17 1987-09-17 Semiconductor light-emitting diode

Publications (1)

Publication Number Publication Date
JPS6476782A true JPS6476782A (en) 1989-03-22

Family

ID=16974016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23462887A Pending JPS6476782A (en) 1987-09-17 1987-09-17 Semiconductor light-emitting diode

Country Status (1)

Country Link
JP (1) JPS6476782A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308377A (en) * 2000-04-25 2001-11-02 Nippon Sheet Glass Co Ltd Three-terminal light-emitting thyristor and self- scanning light-emitting element array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308377A (en) * 2000-04-25 2001-11-02 Nippon Sheet Glass Co Ltd Three-terminal light-emitting thyristor and self- scanning light-emitting element array

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