JPS6433975A - Manufacture of semiconductor light emitting device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor light emitting device having a structure to realize high efficiency and high response, by forming a recessed part by partially etching a semicondcutor substrate by applying an insulating film to a mask, and forming an epitaxial layer for forming a double heterojunction in the above recessed part. CONSTITUTION:By applying an insulating film 5 wherein a pattern is formed on a semiconductor substrate 4 to a mask, the substrate 4 is partially etched for forming a recessed part. By applying the above insulating film 5 to a mask, epitaxial layers 2, 1, 3 for forming a double heterojunction are formed in the above recessed part. Thus a light emitting part is formed in the above recessed part. For example, an SiO2 film 5 is formed on an N-type InP substrate 4, and a circular aperture whose diameter is about 35mum is formed. By applying the SiO2 film 5 to a mask, etching is performed to form a recessed part whose depth is about 4mum. In the recessed part, the following are grown in order by liquid growth and the like; an N-type InP clad layer 2, an InGaAsP active layer 1, and a P-type InP clad layer 3. Thereby, an LED for long wavelength band communication is manufactured.