JPS6476783A - Semiconductor light-emitting diode - Google Patents
Semiconductor light-emitting diodeInfo
- Publication number
- JPS6476783A JPS6476783A JP23462987A JP23462987A JPS6476783A JP S6476783 A JPS6476783 A JP S6476783A JP 23462987 A JP23462987 A JP 23462987A JP 23462987 A JP23462987 A JP 23462987A JP S6476783 A JPS6476783 A JP S6476783A
- Authority
- JP
- Japan
- Prior art keywords
- aperture
- type
- insulating film
- mesa
- circular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To realize an LED having high fiber coupling output with a high manufacturing yield, by constructing a semiconductor light-emitting diode having a double-hetero structure including an active layer such that it has an aperture pointed to particular directions while a circular-mesa-type light-emitting section is formed within the aperture. CONSTITUTION:On an N-type InP substrate 11, there are deposited an N-type InGaAsP active layer 13, a P-type InP layer 14 and a P-type InGaAsP contact layer 15 sequentially in that order by the liquid-phase epitaxy. Then, an aperture 17 is formed by a chemical etching process such that it includes a circular mesa 16 with a diameter of 25mum at the center thereof and has configurations pointed to the directions <110>. An insulating film of silicon nitride 18 is deposited on the surface of the aperture 17 and P-type InGaAsP contact layer 15. Subsequently, the insulating film on the top surface of the circular mesa 16 is removed by a selective etching process using photoresist, and a TiPt film is formed to provide a P-electrode 19 on the surface from which the insulating film has been removed. The N-type InP substrate 11 is polished to decrease its thickness to about 100mum and then an AuGeNi film is formed to provide an N-electrode 21.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23462987A JPS6476783A (en) | 1987-09-17 | 1987-09-17 | Semiconductor light-emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23462987A JPS6476783A (en) | 1987-09-17 | 1987-09-17 | Semiconductor light-emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6476783A true JPS6476783A (en) | 1989-03-22 |
Family
ID=16974031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23462987A Pending JPS6476783A (en) | 1987-09-17 | 1987-09-17 | Semiconductor light-emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6476783A (en) |
-
1987
- 1987-09-17 JP JP23462987A patent/JPS6476783A/en active Pending
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