JPS6476783A - Semiconductor light-emitting diode - Google Patents

Semiconductor light-emitting diode

Info

Publication number
JPS6476783A
JPS6476783A JP23462987A JP23462987A JPS6476783A JP S6476783 A JPS6476783 A JP S6476783A JP 23462987 A JP23462987 A JP 23462987A JP 23462987 A JP23462987 A JP 23462987A JP S6476783 A JPS6476783 A JP S6476783A
Authority
JP
Japan
Prior art keywords
aperture
type
insulating film
mesa
circular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23462987A
Other languages
Japanese (ja)
Inventor
Toshio Uji
Yoichi Isoda
Hiroki Hirasawa
Kazuo Shigeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23462987A priority Critical patent/JPS6476783A/en
Publication of JPS6476783A publication Critical patent/JPS6476783A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE:To realize an LED having high fiber coupling output with a high manufacturing yield, by constructing a semiconductor light-emitting diode having a double-hetero structure including an active layer such that it has an aperture pointed to particular directions while a circular-mesa-type light-emitting section is formed within the aperture. CONSTITUTION:On an N-type InP substrate 11, there are deposited an N-type InGaAsP active layer 13, a P-type InP layer 14 and a P-type InGaAsP contact layer 15 sequentially in that order by the liquid-phase epitaxy. Then, an aperture 17 is formed by a chemical etching process such that it includes a circular mesa 16 with a diameter of 25mum at the center thereof and has configurations pointed to the directions <110>. An insulating film of silicon nitride 18 is deposited on the surface of the aperture 17 and P-type InGaAsP contact layer 15. Subsequently, the insulating film on the top surface of the circular mesa 16 is removed by a selective etching process using photoresist, and a TiPt film is formed to provide a P-electrode 19 on the surface from which the insulating film has been removed. The N-type InP substrate 11 is polished to decrease its thickness to about 100mum and then an AuGeNi film is formed to provide an N-electrode 21.
JP23462987A 1987-09-17 1987-09-17 Semiconductor light-emitting diode Pending JPS6476783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23462987A JPS6476783A (en) 1987-09-17 1987-09-17 Semiconductor light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23462987A JPS6476783A (en) 1987-09-17 1987-09-17 Semiconductor light-emitting diode

Publications (1)

Publication Number Publication Date
JPS6476783A true JPS6476783A (en) 1989-03-22

Family

ID=16974031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23462987A Pending JPS6476783A (en) 1987-09-17 1987-09-17 Semiconductor light-emitting diode

Country Status (1)

Country Link
JP (1) JPS6476783A (en)

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