KR890015353A - 도전율 변조 mos 반도체 전력 디바이스(himos) 및 그 제조방법 - Google Patents

도전율 변조 mos 반도체 전력 디바이스(himos) 및 그 제조방법 Download PDF

Info

Publication number
KR890015353A
KR890015353A KR1019890003978A KR890003978A KR890015353A KR 890015353 A KR890015353 A KR 890015353A KR 1019890003978 A KR1019890003978 A KR 1019890003978A KR 890003978 A KR890003978 A KR 890003978A KR 890015353 A KR890015353 A KR 890015353A
Authority
KR
South Korea
Prior art keywords
type
layer
manufacturing
thin
semiconductor
Prior art date
Application number
KR1019890003978A
Other languages
English (en)
Inventor
무스메치 살바토레
론 시스 발레 세사레
Original Assignee
산토 푸졸로, 귀세페 페르 라
에세지에세-톰슨 미크로엘렉트로닉스 에세. 에르. 엘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 산토 푸졸로, 귀세페 페르 라, 에세지에세-톰슨 미크로엘렉트로닉스 에세. 에르. 엘 filed Critical 산토 푸졸로, 귀세페 페르 라
Publication of KR890015353A publication Critical patent/KR890015353A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

도전율 변조 MOS 반도체 전력 디바이스(HIMOS) 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3a도 내지 제3e도는 여러 제조 프로세스 단계 중의 본 발명에 따른 구조를 도시한 개략도, 제3f는 본 발명에 따른 제조 프로세스 종료시의 HIMOS트랜지스터의 구조를 도시한 도면, 제4a도 및 제4b도는 종래 방법과 본 발명의 따른 방법으로 얻어질 수 있는 버퍼층내의 도펀트의 농도를 나타내는 곡선을 도시한 도면.

Claims (3)

  1. N+형(또는 P+형)얇은 "버퍼"층(2) 및 N-형(또는 P-형) 에피택셜층(3)이 위에 배치되는 P+형(또는 N+형) 반도체 기판(1)을 포함하는 드레인과의 직렬 P-N(또는 N-P) 접합부의 소수 캐리어 주입에 의해 드레인 영역의 도전율이 변조되는 형태의 N-채널(또는 P-채널) 도전율 변조 MOS 반도체 전력 디바이스를 제조하기 위한 방법에 있어서, 버퍼층(2) 형성 단계가 반도체 기판(1)상의 얇은 P형(또는 N형) 반도체층(4)에 에피택셜 성장 단계, 얇은 반도체층(4)내의 N형(또는 P형) 도펀트 피착 또는 이온 주입 단계, 및 N+(또는 P+)층을 형성할 수 있도록 충분한 온도 및 충분한 시간 길이에서의 도펀트 확산 단계를 실행하는 단계를 포함하고, 이 단계를 다음에 N-형(또는 P-형)층(3)의 에피택설 성장 단계가 뒤따르는 것을 특징으로 하는 제조방법.
  2. 제 1 항에 있어서, 최종 발생 N+(또는 P+)층의 두께가 박층(4)의 최초 두께보다 얇게 되도록, 얇은 반도체층(4)내의 도펀트의 학산이 일어나는 온도 및 시간이 제어되는 것을 특징으로 하는 제조방법.
  3. 제 1 항 또는 제 2 항의 제조 방법에 따라 얻어진 도전율 변조 MOS 반도체 전역 디바이스.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890003978A 1988-03-29 1989-03-29 도전율 변조 mos 반도체 전력 디바이스(himos) 및 그 제조방법 KR890015353A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT20005/88A IT1218200B (it) 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti
IT200005A/88 1988-03-29

Publications (1)

Publication Number Publication Date
KR890015353A true KR890015353A (ko) 1989-10-30

Family

ID=11163042

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890003978A KR890015353A (ko) 1988-03-29 1989-03-29 도전율 변조 mos 반도체 전력 디바이스(himos) 및 그 제조방법

Country Status (6)

Country Link
US (1) US5073511A (ko)
EP (1) EP0335445B1 (ko)
JP (1) JP3012246B2 (ko)
KR (1) KR890015353A (ko)
DE (1) DE68910360T2 (ko)
IT (1) IT1218200B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020045241A (ko) * 2000-12-08 2002-06-19 윤종용 공기조화기의 표시부 전원제어장치

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JPH0691263B2 (ja) * 1988-10-19 1994-11-14 株式会社東芝 半導体装置の製造方法
IT1241049B (it) * 1990-03-08 1993-12-29 Cons Ric Microelettronica Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione
AU2024992A (en) * 1991-05-07 1992-12-21 Inframetrics Inc. Apparatus for operating a conventional film camera in an electronic mode operation
JP2810821B2 (ja) * 1992-03-30 1998-10-15 三菱電機株式会社 半導体装置及びその製造方法
EP0671770B1 (en) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Multilayer epitaxy for a silicon diode
US5892787A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
EP0725446A1 (en) * 1995-02-02 1996-08-07 Motorola, Inc. Insulated gate bipolar semiconductor device and method therefor
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
US5872028A (en) * 1996-09-05 1999-02-16 Harris Corporation Method of forming power semiconductor devices with controllable integrated buffer
DE19811297B4 (de) 1997-03-17 2009-03-19 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
JP2006526272A (ja) * 2003-05-19 2006-11-16 エスティマイクロエレクトロニクス ソシエタ ア レスポンサビリタ リミタータ 高速切替え速度を有する電源装置及びその製造方法
EP4084070A4 (en) * 2019-12-28 2024-02-07 Keming Wang NEW PRINCIPLES AND TECHNOLOGY FOR SEMICONDUCTOR ELECTRONICS, AND DEVICE

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
FR2535901A1 (fr) * 1982-11-10 1984-05-11 Silicium Semiconducteur Ssc Thyristor asymetrique a forte tenue en tension inverse
JPS60260152A (ja) * 1984-06-07 1985-12-23 Nec Corp 半導体装置
JPS6134753A (ja) * 1984-07-25 1986-02-19 Hitachi Ltd 回転ヘツド型磁気記録再生装置
JPS6134753U (ja) * 1984-07-31 1986-03-03 株式会社明電舎 半導体装置
US4696701A (en) * 1986-11-12 1987-09-29 Motorola, Inc. Epitaxial front seal for a wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020045241A (ko) * 2000-12-08 2002-06-19 윤종용 공기조화기의 표시부 전원제어장치

Also Published As

Publication number Publication date
EP0335445A1 (en) 1989-10-04
JPH0210874A (ja) 1990-01-16
IT8820005A0 (it) 1988-03-29
EP0335445B1 (en) 1993-11-03
US5073511A (en) 1991-12-17
DE68910360T2 (de) 1994-03-31
DE68910360D1 (de) 1993-12-09
JP3012246B2 (ja) 2000-02-21
IT1218200B (it) 1990-04-12

Similar Documents

Publication Publication Date Title
US4379726A (en) Method of manufacturing semiconductor device utilizing outdiffusion and epitaxial deposition
KR890015353A (ko) 도전율 변조 mos 반도체 전력 디바이스(himos) 및 그 제조방법
GB923513A (en) Improvements in semiconductor devices
KR930001466A (ko) Pnp 디바이스를 위한 p 매립층의 제조방법
KR880003404A (ko) 다른 p-형 도팬트를 구비한 p-형 도팬트의 특성개량
GB1442693A (en) Method of manufacturing a junction field effect transistor
KR920001655A (ko) 바이폴라 트랜지스터용 자기정렬된 콜렉터 구조 및 이를 주입하는 방법
KR840005927A (ko) 반도체 집적 회로 장치 및 그의 제조 방법
KR870003571A (ko) 반도체 기억장치 및 그 제조방법
KR890003026A (ko) 고속 고집적 반도체소자(BiCMOS)의 제조방법
JPS645070A (en) Vertical insulated gate field effect transistor
KR880003432A (ko) 쇼트키 트랜지스터 장치
JPS55111171A (en) Field-effect semiconductor device
GB1358275A (en) Semiconductor devices
JPS54126478A (en) Transistor
KR910003757A (ko) 이중 에피택시를 이용한 트랜지스터의 제조방법
GB1414066A (en) Junction transistors
KR880003431A (ko) I²l 소자의 제조방법
KR840004307A (ko) 선형소자와 공존하는 종방향 전류 주임형 집적주임논리 소자 및 그 제조방법
KR870010634A (ko) 종방향 구조의 다이리스터(Thyristor) 제조방법
KR910015062A (ko) 반도체장치의 제조방법
JPS6457752A (en) Semiconductor device
KR970018729A (ko) 다결정 실리콘 박막 트랜지스터 공정을 이용한 고성능 pnp 수직 바이폴라 트랜지스터 제조방법
KR900004028A (ko) 복합형 반도체소자의 구조 및 제조방법
JPS6473674A (en) Mos-type field-effect transistor

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid