JPS6134753U - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6134753U
JPS6134753U JP11930884U JP11930884U JPS6134753U JP S6134753 U JPS6134753 U JP S6134753U JP 11930884 U JP11930884 U JP 11930884U JP 11930884 U JP11930884 U JP 11930884U JP S6134753 U JPS6134753 U JP S6134753U
Authority
JP
Japan
Prior art keywords
layer
semiconductor equipment
epitaxial growth
layer formed
recorded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11930884U
Other languages
English (en)
Other versions
JPH0416443Y2 (ja
Inventor
泰英 林
Original Assignee
株式会社明電舎
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社明電舎 filed Critical 株式会社明電舎
Priority to JP11930884U priority Critical patent/JPS6134753U/ja
Publication of JPS6134753U publication Critical patent/JPS6134753U/ja
Application granted granted Critical
Publication of JPH0416443Y2 publication Critical patent/JPH0416443Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】 第１図は本考案の一実施例を示す断面図、第２図ａ〜第
２図ｄはともに実施例の要部の製造工程を示す説明図、
第３図ａ〜ネ３図Ｃはともに従来の装置の一例を示す断
面図である。 Ｐ＋・・・Ｐ＋層、Ｐ−・・・Ｐ一層、Ｎ＋・・・Ｎ＋
層、Ｎ−・・・Ｎ一層。

Claims (1)

    【実用新案登録請求の範囲】
  1. Ｐ＋層から成るシリコンウエハにエビタキシャル成長さ
    せて形成したＰ一層と、このＰ一層にリン拡散又はエビ
    タキシャル成長によって形成したＮ＋層と、このＮ＋層
    にエビタキシャル成長させて形成したＮ一層とを備えた
    ことを特徴とする半導体装置。
JP11930884U 1984-07-31 1984-07-31 半導体装置 Granted JPS6134753U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11930884U JPS6134753U (ja) 1984-07-31 1984-07-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11930884U JPS6134753U (ja) 1984-07-31 1984-07-31 半導体装置

Publications (2)

Publication Number Publication Date
JPS6134753U true JPS6134753U (ja) 1986-03-03
JPH0416443Y2 JPH0416443Y2 (ja) 1992-04-13

Family

ID=30678188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11930884U Granted JPS6134753U (ja) 1984-07-31 1984-07-31 半導体装置

Country Status (1)

Country Link
JP (1) JPS6134753U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210874A (ja) * 1988-03-29 1990-01-16 Sgs Thomson Microelettronica Spa 導電率変調ｍｏｓ半導体パワーデバイスの製造方法及びこの方法により得られるデバイス

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
JPS6026151A (ja) * 1983-07-22 1985-02-09 Shinagawa Diecast Kogyo Kk 膜式気化器の加速装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
JPS6026151A (ja) * 1983-07-22 1985-02-09 Shinagawa Diecast Kogyo Kk 膜式気化器の加速装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210874A (ja) * 1988-03-29 1990-01-16 Sgs Thomson Microelettronica Spa 導電率変調ｍｏｓ半導体パワーデバイスの製造方法及びこの方法により得られるデバイス

Also Published As

Publication number Publication date
JPH0416443Y2 (ja) 1992-04-13

Similar Documents

Publication Publication Date Title
JPS6134753U (ja) 半導体装置
JPS58158455U (ja) 半導体装置
JPS628641U (ja)
JPS6139959U (ja) 半導体装置
JPS6117751U (ja) テ−プキヤリア半導体装置
JPS5820536U (ja) 半導体装置
JPS5878670U (ja) 半導体装置
JPS6068663U (ja) 半導体装置
JPH0241440U (ja)
JPS6134733U (ja) 半導体ウエハ
JPS5860951U (ja) 半導体装置
JPS6037239U (ja) 半導体ウエハ
JPS58416U (ja) 半導体製造治具
JPS61166528U (ja)
JPS6094836U (ja) 半導体装置
JPS63119246U (ja)
JPS619834U (ja) 半導体ウエハ−
JPS5856459U (ja) 半導体装置
JPS6411557U (ja)
JPS5869942U (ja) 半導体装置
JPS58114039U (ja) 半導体製造治具
JPS60137451U (ja) 半導体抵抗装置
JPS5954931U (ja) 半導体集積回路
JPS6022829U (ja) 半導体製造装置
JPS59187154U (ja) 半導体装置