JPS5820536U - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5820536U
JPS5820536U JP11635881U JP11635881U JPS5820536U JP S5820536 U JPS5820536 U JP S5820536U JP 11635881 U JP11635881 U JP 11635881U JP 11635881 U JP11635881 U JP 11635881U JP S5820536 U JPS5820536 U JP S5820536U
Authority
JP
Japan
Prior art keywords
bonded
semiconductor equipment
alloy
holding plate
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11635881U
Other languages
English (en)
Inventor
貞森　将昭
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP11635881U priority Critical patent/JPS5820536U/ja
Publication of JPS5820536U publication Critical patent/JPS5820536U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は従来の電力用半導体素子の要部断面図、第２図
Ａはこの考案の一実施例の要部断面図、第２図Ｂはこの
実施例に用いる基板保持板の斜視図、第３図はこの実施
例の完成品の断面図である。 図において、１はＳｉウェハー（半導体基板）、３はろ
う材、５は基板保持板、６は貫通孔である。 なお、図中同一符号は同一または相当部分を示す。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体基板と、金属からなり上記半導体基板を保持する
    基板保持板とをろう材を介して合金固着してなるものに
    おいて、上記基板保持板にその一方の主面から他方の主
    面に達己上記合金固着時に上記ろう材から発生するガス
    を放出させる置溝孔を設けたことを特徴とする半導体装
    置。
JP11635881U 1981-08-03 1981-08-03 半導体装置 Pending JPS5820536U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11635881U JPS5820536U (ja) 1981-08-03 1981-08-03 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11635881U JPS5820536U (ja) 1981-08-03 1981-08-03 半導体装置

Publications (1)

Publication Number Publication Date
JPS5820536U true JPS5820536U (ja) 1983-02-08

Family

ID=29910583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11635881U Pending JPS5820536U (ja) 1981-08-03 1981-08-03 半導体装置

Country Status (1)

Country Link
JP (1) JPS5820536U (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376461A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd 半導体装置の製造方法
JPH0390855U (ja) * 1989-12-28 1991-09-17
JP2013179103A (ja) * 2012-02-28 2013-09-09 Nissan Motor Co Ltd 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376461A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd 半導体装置の製造方法
JPH0390855U (ja) * 1989-12-28 1991-09-17
JP2013179103A (ja) * 2012-02-28 2013-09-09 Nissan Motor Co Ltd 半導体装置の製造方法

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