JPS628641U - - Google Patents
Info
- Publication number
- JPS628641U JPS628641U JP1985097623U JP9762385U JPS628641U JP S628641 U JPS628641 U JP S628641U JP 1985097623 U JP1985097623 U JP 1985097623U JP 9762385 U JP9762385 U JP 9762385U JP S628641 U JPS628641 U JP S628641U
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor device
- bonded
- silicon layer
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
Description
第1図は本考案に係る半導体装置のヒートシン
クの説明図、第2図は同半導体装置のヒートシン
クの製造方法の説明図、第3図は従来の半導体装
置のヒートシンクの説明図、第4図は本考案の第
2実施例の説明図、第5図は本考案の第3実施例
の説明図である。 1…ヘツダー、2…半導体チツプ、11…Si
基板、12…アモルフアスSi層、13…金属層
、14…ヒートシンク部材、15…金属細線。
クの説明図、第2図は同半導体装置のヒートシン
クの製造方法の説明図、第3図は従来の半導体装
置のヒートシンクの説明図、第4図は本考案の第
2実施例の説明図、第5図は本考案の第3実施例
の説明図である。 1…ヘツダー、2…半導体チツプ、11…Si
基板、12…アモルフアスSi層、13…金属層
、14…ヒートシンク部材、15…金属細線。
Claims (1)
- 【実用新案登録請求の範囲】 (1) 半導体チツプとヘツダー間にヒートシンク
部材が設けられる半導体装置のヒートシンクにお
いて、前記ヒートシンク部材の一部にアモルフア
スシリコン層を形成するようにしたことを特徴と
する半導体装置のヒートシンク。 (2) 前記アモルフアスシリコン層は前記半導体
チツプがボンデイングされる面に形成されること
を特徴とする実用新案登録請求の範囲第1項記載
の半導体装置のヒートシンク。 (3) 前記アモルフアスシリコン層は前記ヘツダ
ーにボンデイングされる面に形成されることを特
徴とする実用新案登録請求の範囲第1項記載の半
導体装置のヒートシンク。 (4) 前記アモルフアスシリコン層は前記半導体
チツプがボンデイングされる面及び前記ヘツダー
にボンデイングされる面に形成されることを特徴
とする実用新案登録請求の範囲第1項記載の半導
体装置のヒートシンク。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985097623U JPS628641U (ja) | 1985-06-28 | 1985-06-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985097623U JPS628641U (ja) | 1985-06-28 | 1985-06-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS628641U true JPS628641U (ja) | 1987-01-19 |
Family
ID=30964765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985097623U Pending JPS628641U (ja) | 1985-06-28 | 1985-06-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS628641U (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0439956A (ja) * | 1990-06-05 | 1992-02-10 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH0457346A (ja) * | 1990-06-27 | 1992-02-25 | Shimadzu Corp | ヒートシンク |
JPH04293287A (ja) * | 1991-03-22 | 1992-10-16 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
-
1985
- 1985-06-28 JP JP1985097623U patent/JPS628641U/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0439956A (ja) * | 1990-06-05 | 1992-02-10 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH0457346A (ja) * | 1990-06-27 | 1992-02-25 | Shimadzu Corp | ヒートシンク |
JPH04293287A (ja) * | 1991-03-22 | 1992-10-16 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
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