IT1218200B - Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti - Google Patents

Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti

Info

Publication number
IT1218200B
IT1218200B IT20005/88A IT2000588A IT1218200B IT 1218200 B IT1218200 B IT 1218200B IT 20005/88 A IT20005/88 A IT 20005/88A IT 2000588 A IT2000588 A IT 2000588A IT 1218200 B IT1218200 B IT 1218200B
Authority
IT
Italy
Prior art keywords
himos
mos
power device
manufacturing procedure
conductivity modulation
Prior art date
Application number
IT20005/88A
Other languages
English (en)
Other versions
IT8820005A0 (it
Inventor
Salvatore Musumeci
Cesare Ronsisvalle
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT20005/88A priority Critical patent/IT1218200B/it
Publication of IT8820005A0 publication Critical patent/IT8820005A0/it
Priority to EP89200717A priority patent/EP0335445B1/en
Priority to DE89200717T priority patent/DE68910360T2/de
Priority to JP1074109A priority patent/JP3012246B2/ja
Priority to US07/330,182 priority patent/US5073511A/en
Priority to KR1019890003978A priority patent/KR890015353A/ko
Application granted granted Critical
Publication of IT1218200B publication Critical patent/IT1218200B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs
IT20005/88A 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti IT1218200B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT20005/88A IT1218200B (it) 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti
EP89200717A EP0335445B1 (en) 1988-03-29 1989-03-21 Method of manufacturing a conductivity modulation MOS semiconductor power device (Himos)
DE89200717T DE68910360T2 (de) 1988-03-29 1989-03-21 Methode zur Herstellung eines MOS-Halbleiter-Leistungsbauelementes (HIMOS) mit Leitfähigkeitsmodulation.
JP1074109A JP3012246B2 (ja) 1988-03-29 1989-03-28 導電率変調ｍｏｓ半導体パワーデバイスの製造方法及びこの方法により得られるデバイス
US07/330,182 US5073511A (en) 1988-03-29 1989-03-29 Method for manufacturing a conductivity modulation mos semiconductor power device (himos)
KR1019890003978A KR890015353A (ko) 1988-03-29 1989-03-29 도전율 변조 mos 반도체 전력 디바이스(himos) 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20005/88A IT1218200B (it) 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti

Publications (2)

Publication Number Publication Date
IT8820005A0 IT8820005A0 (it) 1988-03-29
IT1218200B true IT1218200B (it) 1990-04-12

Family

ID=11163042

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20005/88A IT1218200B (it) 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti

Country Status (6)

Country Link
US (1) US5073511A (it)
EP (1) EP0335445B1 (it)
JP (1) JP3012246B2 (it)
KR (1) KR890015353A (it)
DE (1) DE68910360T2 (it)
IT (1) IT1218200B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JPH0691263B2 (ja) * 1988-10-19 1994-11-14 株式会社東芝 半導体装置の製造方法
IT1241049B (it) * 1990-03-08 1993-12-29 Cons Ric Microelettronica Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione
HK1004077A1 (en) * 1991-05-07 1998-11-13 Sapir Itzhak Apparatus for operating a conventional film camera in an electronic mode operation
JP2810821B2 (ja) * 1992-03-30 1998-10-15 三菱電機株式会社 半導体装置及びその製造方法
EP0671770B1 (en) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Multilayer epitaxy for a silicon diode
US5892787A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
EP0725446A1 (en) * 1995-02-02 1996-08-07 Motorola, Inc. Insulated gate bipolar semiconductor device and method therefor
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
US5872028A (en) * 1996-09-05 1999-02-16 Harris Corporation Method of forming power semiconductor devices with controllable integrated buffer
DE19811297B4 (de) 1997-03-17 2009-03-19 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
KR20020045241A (ko) * 2000-12-08 2002-06-19 윤종용 공기조화기의 표시부 전원제어장치
US7755139B2 (en) * 2003-05-19 2010-07-13 Stmicroelectronics S.R.L. Power device with high switching speed and manufacturing method thereof
JP5721308B2 (ja) * 2008-03-26 2015-05-20 ローム株式会社 半導体装置
WO2021128435A1 (zh) * 2019-12-28 2021-07-01 汪克明 新半导体电子原理技术与器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
FR2535901A1 (fr) * 1982-11-10 1984-05-11 Silicium Semiconducteur Ssc Thyristor asymetrique a forte tenue en tension inverse
JPS60260152A (ja) * 1984-06-07 1985-12-23 Nec Corp 半導体装置
JPS6134753A (ja) * 1984-07-25 1986-02-19 Hitachi Ltd 回転ヘツド型磁気記録再生装置
JPS6134753U (ja) * 1984-07-31 1986-03-03 株式会社明電舎 半導体装置
US4696701A (en) * 1986-11-12 1987-09-29 Motorola, Inc. Epitaxial front seal for a wafer

Also Published As

Publication number Publication date
EP0335445B1 (en) 1993-11-03
JP3012246B2 (ja) 2000-02-21
IT8820005A0 (it) 1988-03-29
DE68910360D1 (de) 1993-12-09
EP0335445A1 (en) 1989-10-04
DE68910360T2 (de) 1994-03-31
KR890015353A (ko) 1989-10-30
US5073511A (en) 1991-12-17
JPH0210874A (ja) 1990-01-16

Similar Documents

Publication Publication Date Title
IT1218200B (it) Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti
IT1217322B (it) Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
GB2241111B (en) Power semiconductor device and method of manufacturing the same
DE69530155T2 (de) Halbleiteranordnung mit Feldplatte und Leistungswandler mit dieser Halbleiteranordnung
IT1223135B (it) Dispositivo semiconduttore e metodo di fabbricazione dello stesso
FI906244A7 (fi) Sähkövirran jakelulaite
DE69321149D1 (de) Halbleiter-Kontaktöffnungsstruktur und -verfahren
IT1176957B (it) Dispositivo a circuito integrato a semiconduttori e procedimento di fabbricazione di esso
FI860222A0 (fi) Puolijohdekomponentti sisältäen korkeajännite-MOS kanavatransistoreita ja matalajännite-MOS kanavatransistoreita
KR860006844A (ko) 반도체장치 및 그 제조방법
IT1172413B (it) Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo
EP0483744A3 (en) Current detection circuit of power semiconductor device and power converter using the circuit
IT1184402B (it) Dispositivo a circuito integrato a semiconduttori e procedimento per la produzione di esso
BR8504783A (pt) Dispositivo de montagem e de conexao para semicondutor de potencia
DE68928312D1 (de) Leistungshalbleitervorrichtung
EP0158292A3 (en) Semiconductor device having a drive circuit element and an output transistor
KR910008867A (ko) 반도체장치의 제조방법과 그것에 사용하는 바이어스 이씨알씨브이디장치
IT1214806B (it) Dispositivo integrato monolitico di potenza e semiconduttore
DE69131235D1 (de) Halbleitende Hochleistungsverstärkervorrichtung
EP0192229A3 (en) Conductivity modulation type semiconductor device and method for manufacturing the same
KR910007151A (ko) 대전력 반도체장치
IT1202657B (it) Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento
IT1191122B (it) Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi' ottenuti
DE69030710D1 (de) Kryogene Leistungshalbleitervorrichtung
IT8806611A0 (it) Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329