IT1218200B - Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti - Google Patents

Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti

Info

Publication number
IT1218200B
IT1218200B IT20005/88A IT2000588A IT1218200B IT 1218200 B IT1218200 B IT 1218200B IT 20005/88 A IT20005/88 A IT 20005/88A IT 2000588 A IT2000588 A IT 2000588A IT 1218200 B IT1218200 B IT 1218200B
Authority
IT
Italy
Prior art keywords
himos
mos
power device
manufacturing procedure
conductivity modulation
Prior art date
Application number
IT20005/88A
Other languages
English (en)
Other versions
IT8820005A0 (it
Inventor
Salvatore Musumeci
Cesare Ronsisvalle
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT20005/88A priority Critical patent/IT1218200B/it
Publication of IT8820005A0 publication Critical patent/IT8820005A0/it
Priority to EP89200717A priority patent/EP0335445B1/en
Priority to DE89200717T priority patent/DE68910360T2/de
Priority to JP1074109A priority patent/JP3012246B2/ja
Priority to US07/330,182 priority patent/US5073511A/en
Priority to KR1019890003978A priority patent/KR890015353A/ko
Application granted granted Critical
Publication of IT1218200B publication Critical patent/IT1218200B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs
IT20005/88A 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti IT1218200B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT20005/88A IT1218200B (it) 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti
EP89200717A EP0335445B1 (en) 1988-03-29 1989-03-21 Method of manufacturing a conductivity modulation MOS semiconductor power device (Himos)
DE89200717T DE68910360T2 (de) 1988-03-29 1989-03-21 Methode zur Herstellung eines MOS-Halbleiter-Leistungsbauelementes (HIMOS) mit Leitfähigkeitsmodulation.
JP1074109A JP3012246B2 (ja) 1988-03-29 1989-03-28 導電率変調ｍｏｓ半導体パワーデバイスの製造方法及びこの方法により得られるデバイス
US07/330,182 US5073511A (en) 1988-03-29 1989-03-29 Method for manufacturing a conductivity modulation mos semiconductor power device (himos)
KR1019890003978A KR890015353A (ko) 1988-03-29 1989-03-29 도전율 변조 mos 반도체 전력 디바이스(himos) 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20005/88A IT1218200B (it) 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti

Publications (2)

Publication Number Publication Date
IT8820005A0 IT8820005A0 (it) 1988-03-29
IT1218200B true IT1218200B (it) 1990-04-12

Family

ID=11163042

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20005/88A IT1218200B (it) 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti

Country Status (6)

Country Link
US (1) US5073511A (it)
EP (1) EP0335445B1 (it)
JP (1) JP3012246B2 (it)
KR (1) KR890015353A (it)
DE (1) DE68910360T2 (it)
IT (1) IT1218200B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JPH0691263B2 (ja) * 1988-10-19 1994-11-14 株式会社東芝 半導体装置の製造方法
IT1241049B (it) * 1990-03-08 1993-12-29 Cons Ric Microelettronica Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione
AU2024992A (en) * 1991-05-07 1992-12-21 Inframetrics Inc. Apparatus for operating a conventional film camera in an electronic mode operation
JP2810821B2 (ja) * 1992-03-30 1998-10-15 三菱電機株式会社 半導体装置及びその製造方法
EP0671770B1 (en) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Multilayer epitaxy for a silicon diode
US5892787A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
EP0725446A1 (en) * 1995-02-02 1996-08-07 Motorola, Inc. Insulated gate bipolar semiconductor device and method therefor
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
US5872028A (en) * 1996-09-05 1999-02-16 Harris Corporation Method of forming power semiconductor devices with controllable integrated buffer
DE19811297B4 (de) 1997-03-17 2009-03-19 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
KR20020045241A (ko) * 2000-12-08 2002-06-19 윤종용 공기조화기의 표시부 전원제어장치
EP1625624A1 (en) * 2003-05-19 2006-02-15 STMicroelectronics S.r.l. Power device with high switching speed and manufacturing method thereof
WO2021128435A1 (zh) * 2019-12-28 2021-07-01 汪克明 新半导体电子原理技术与器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
FR2535901A1 (fr) * 1982-11-10 1984-05-11 Silicium Semiconducteur Ssc Thyristor asymetrique a forte tenue en tension inverse
JPS60260152A (ja) * 1984-06-07 1985-12-23 Nec Corp 半導体装置
JPS6134753A (ja) * 1984-07-25 1986-02-19 Hitachi Ltd 回転ヘツド型磁気記録再生装置
JPS6134753U (ja) * 1984-07-31 1986-03-03 株式会社明電舎 半導体装置
US4696701A (en) * 1986-11-12 1987-09-29 Motorola, Inc. Epitaxial front seal for a wafer

Also Published As

Publication number Publication date
EP0335445B1 (en) 1993-11-03
KR890015353A (ko) 1989-10-30
JP3012246B2 (ja) 2000-02-21
EP0335445A1 (en) 1989-10-04
JPH0210874A (ja) 1990-01-16
DE68910360T2 (de) 1994-03-31
US5073511A (en) 1991-12-17
IT8820005A0 (it) 1988-03-29
DE68910360D1 (de) 1993-12-09

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Effective date: 19970329