IT1202657B - Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento - Google Patents

Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento

Info

Publication number
IT1202657B
IT1202657B IT19630/87A IT1963087A IT1202657B IT 1202657 B IT1202657 B IT 1202657B IT 19630/87 A IT19630/87 A IT 19630/87A IT 1963087 A IT1963087 A IT 1963087A IT 1202657 B IT1202657 B IT 1202657B
Authority
IT
Italy
Prior art keywords
manufacturing procedure
modular power
semiconductor modular
power device
semiconductor
Prior art date
Application number
IT19630/87A
Other languages
English (en)
Other versions
IT8719630A0 (it
Inventor
Antonio Perniciaro Spatrisano
Luciano Gandolfo
Carlo Minotti
Cristina Natale Di
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT19630/87A priority Critical patent/IT1202657B/it
Publication of IT8719630A0 publication Critical patent/IT8719630A0/it
Priority to EP88200374A priority patent/EP0282124B1/en
Priority to DE88200374T priority patent/DE3884019T2/de
Priority to JP63053848A priority patent/JPS6425732A/ja
Application granted granted Critical
Publication of IT1202657B publication Critical patent/IT1202657B/it
Priority to US07/373,647 priority patent/US4926547A/en
Priority to US07/462,544 priority patent/US5038198A/en
Priority to US08/184,783 priority patent/USRE38037E1/en
Priority to US08/558,979 priority patent/USRE37416E1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
IT19630/87A 1987-03-09 1987-03-09 Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento IT1202657B (it)

Priority Applications (8)

Application Number Priority Date Filing Date Title
IT19630/87A IT1202657B (it) 1987-03-09 1987-03-09 Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento
EP88200374A EP0282124B1 (en) 1987-03-09 1988-02-29 Method for manufacturing a modular semiconductor power device and device obtained thereby
DE88200374T DE3884019T2 (de) 1987-03-09 1988-02-29 Verfahren zum Herstellen einer Modul-Halbleiter-Leistungsanordnung und hergestellte Anordnung.
JP63053848A JPS6425732A (en) 1987-03-09 1988-03-09 Electric power semiconductor device module and manufacture
US07/373,647 US4926547A (en) 1987-03-09 1989-06-27 Method for manufacturing a modular semiconductor power device
US07/462,544 US5038198A (en) 1987-03-09 1990-01-09 Modular semiconductor power device
US08/184,783 USRE38037E1 (en) 1987-03-09 1994-01-21 Modular semiconductor power device
US08/558,979 USRE37416E1 (en) 1987-03-09 1995-11-13 Method for manufacturing a modular semiconductor power device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19630/87A IT1202657B (it) 1987-03-09 1987-03-09 Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento

Publications (2)

Publication Number Publication Date
IT8719630A0 IT8719630A0 (it) 1987-03-09
IT1202657B true IT1202657B (it) 1989-02-09

Family

ID=11159882

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19630/87A IT1202657B (it) 1987-03-09 1987-03-09 Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento

Country Status (5)

Country Link
US (4) US4926547A (it)
EP (1) EP0282124B1 (it)
JP (1) JPS6425732A (it)
DE (1) DE3884019T2 (it)
IT (1) IT1202657B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1202657B (it) * 1987-03-09 1989-02-09 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento
DE3837920A1 (de) * 1988-11-09 1990-05-10 Semikron Elektronik Gmbh Halbleiterelement
JP2504610B2 (ja) * 1990-07-26 1996-06-05 株式会社東芝 電力用半導体装置
US5233583A (en) * 1990-12-19 1993-08-03 General Electric Company Tracking and reading system for an optical medium and medium for use therewith
JPH05166969A (ja) * 1991-10-14 1993-07-02 Fuji Electric Co Ltd 半導体装置
US5705848A (en) * 1995-11-24 1998-01-06 Asea Brown Boveri Ag Power semiconductor module having a plurality of submodules
JP3491481B2 (ja) * 1996-08-20 2004-01-26 株式会社日立製作所 半導体装置とその製造方法
US5736432A (en) * 1996-09-20 1998-04-07 National Semiconductor Corporation Lead frame with lead finger locking feature and method for making same
US6534851B1 (en) * 2000-08-21 2003-03-18 Agere Systems, Inc. Modular semiconductor substrates
US8422243B2 (en) * 2006-12-13 2013-04-16 Stats Chippac Ltd. Integrated circuit package system employing a support structure with a recess
CN118053822B (zh) * 2024-04-16 2024-08-06 四川职业技术学院 一种电源管理芯片的封装结构及封装方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1255073A (en) * 1969-05-20 1971-11-24 Ferranti Ltd Improvements relating to electrical circuit assemblies
US4026008A (en) * 1972-10-02 1977-05-31 Signetics Corporation Semiconductor lead structure and assembly and method for fabricating same
US4106052A (en) * 1975-04-19 1978-08-08 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor rectifier unit having a base plate with means for maintaining insulating wafers in a desired position
JPS5340991A (en) * 1976-09-21 1978-04-13 Hitachi Zosen Corp Device for buffering rocked liquid load incylindrical tank of ship
US4102039A (en) * 1977-02-14 1978-07-25 Motorola, Inc. Method of packaging electronic components
FR2495376A1 (fr) * 1980-12-02 1982-06-04 Thomson Csf Boitiers pour composants semiconducteurs de puissance a cosses de type faston
US4396936A (en) * 1980-12-29 1983-08-02 Honeywell Information Systems, Inc. Integrated circuit chip package with improved cooling means
US4518982A (en) * 1981-02-27 1985-05-21 Motorola, Inc. High current package with multi-level leads
GB2099742B (en) * 1981-06-05 1985-07-31 Philips Electronic Associated Bonding metals to non-metals
FR2524707B1 (fr) * 1982-04-01 1985-05-31 Cit Alcatel Procede d'encapsulation de composants semi-conducteurs, et composants encapsules obtenus
US4615031A (en) * 1982-07-27 1986-09-30 International Standard Electric Corporation Injection laser packages
JPS5968958A (ja) * 1982-10-12 1984-04-19 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ組立体
JPS59181627A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 半導体装置の製造方法
JPS6092650A (ja) * 1983-10-27 1985-05-24 Toshiba Corp 半導体装置
US4722060A (en) * 1984-03-22 1988-01-26 Thomson Components-Mostek Corporation Integrated-circuit leadframe adapted for a simultaneous bonding operation
US4675989A (en) * 1984-05-11 1987-06-30 Amp Incorporated Method of making an electrical circuit package
JPS60239051A (ja) * 1984-05-11 1985-11-27 Mitsubishi Electric Corp 半導体装置
US4635356A (en) * 1984-12-28 1987-01-13 Kabushiki Kaisha Toshiba Method of manufacturing a circuit module
IT1185410B (it) * 1985-10-10 1987-11-12 Sgs Microelettronica Spa Metodo e contenitore perfezionato per dissipare il calore generato da una piastrina a circuito integrato
IT1202657B (it) * 1987-03-09 1989-02-09 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento
US4783428A (en) * 1987-11-23 1988-11-08 Motorola Inc. Method of producing a thermogenetic semiconductor device

Also Published As

Publication number Publication date
DE3884019T2 (de) 1994-02-03
USRE38037E1 (en) 2003-03-18
JPS6425732A (en) 1989-01-27
US4926547A (en) 1990-05-22
USRE37416E1 (en) 2001-10-23
EP0282124A3 (en) 1989-03-22
IT8719630A0 (it) 1987-03-09
DE3884019D1 (de) 1993-10-21
US5038198A (en) 1991-08-06
EP0282124A2 (en) 1988-09-14
EP0282124B1 (en) 1993-09-15

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329