JPS60239051A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60239051A
JPS60239051A JP59095113A JP9511384A JPS60239051A JP S60239051 A JPS60239051 A JP S60239051A JP 59095113 A JP59095113 A JP 59095113A JP 9511384 A JP9511384 A JP 9511384A JP S60239051 A JPS60239051 A JP S60239051A
Authority
JP
Japan
Prior art keywords
substrate
terminals
input signal
conductive layers
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59095113A
Other languages
English (en)
Inventor
Shinobu Takahama
忍 高浜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59095113A priority Critical patent/JPS60239051A/ja
Priority to KR1019850002304A priority patent/KR900000206B1/ko
Priority to DE19853516995 priority patent/DE3516995A1/de
Publication of JPS60239051A publication Critical patent/JPS60239051A/ja
Priority to US07/067,388 priority patent/US5038194A/en
Pending legal-status Critical Current

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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体装置に関し、特に電子機器などに使用
される電力用半導体モジュールの小形化。
高密度化に関するものである。
〔従来技術〕
近年電子機器の発展は著しく、その小形軽量化が急速に
進んでいる。これらの基をなすのは、半導体装置の小形
化及び信頼性の向上である。この中でも特にこの種半導
体装置の、Ｉ・ランジスタの高耐圧化、大電流化に伴う
電力用半導体装置への応用が活発になっており、小形軽
量化を図った電力用半導体モジュールの分野へのトラン
ジスタの適用も多くなってきている。
第１図は従来のよく知られているトランジスタによる３
相インバータブリツジの回路を示し、図中太線で示した
部分は主回路部分に相当し、これらは大電流を流す必要
がある箇所である。Ｑ１〜Ｑ６は電力用トランジスタ、
Ｂ１〜Ｂ６は該電力用トランジスタＱ１〜Ｑ６のベース
入力端子、Ｐ。
Ｎは各々直流入力端子の正端子及び負端子、Ｕ。
Ｖ、　Ｗは各々３相交流電動機に接続される交流出力端
子である。
第１図の回路構成を有するもののうち、従来の第１例と
して小容量の半導体装置について説明すれば、通常、そ
の結線をプリント基板又はアルミナ基板の上面にメッキ
又は蒸着により印刷された金属導電層で行なうことによ
り、高密度集積化を図って装置の小形軽量化を実現して
いる。しかしながら現状では上記金属導電層はその厚み
が数μｍ〜数１０μｍの範囲しか実現されておらず、そ
のため導電層の断面積は実用上のパターン寸法から見て
５μｍ２〜０．１ｍｍ２の範囲となり、その結果該第１
例の半導体装置では配線の電流容量は５〜６Ａが最大許
容限度となっていた。
従って電流容量がＩＯＡを超える電力用半導体モジュー
ルでは、第２図、第３図に示す従来の第２例の構造でも
って接続配線されている場合が多い。第２図において、
■は放熱用金属ベース板、２は該放熱用金属ベース板１
に固着されたアルミナ絶縁基板、３ａ、３ｂは電力用半
導体素子、５゜６はベース、エミッタ入力信号端子、７
，８は直流圧、負端子、９ａ〜９ｃは交流端子、１０８
〜１０Ｃはエミッタ内部電極であり、第１図のトランジ
スタＱｌ、Ｑ３．Ｑ５に相当する半導体素子３ａとエミ
ッタ内部電極１０ａ〜ＩＯｃと、トランジスタＱ２．Ｑ
４．Ｑ６に相当する半導体素子３ｂとコレクタ内部電極
１１ａ〜ｌｌｃとは太線アルミワイヤ（３００μφ〜４
００μφ）４で超音波ワイヤボンディングにより接続さ
れている。
第３図は直流正端子７が接続されている部分の拡大構造
図を示し、同図において、第１図のトランジスタＱｌ、
Ｑ３．Ｑ５に相当する半導体素子３ａのコレクタ内部電
極１１ａ〜１１Ｃは共通金属板１５を介して直流正端子
７の外部電極に半田付結線されている。
このように従来の第２例の半導体装置では、大電流が流
れる直流圧、負端子７．８の配線においては、各半導体
素子３ａ、３ｂのコレクタ、エミッタ内部電極１１ａ〜
１１ｃ、１０ａ　〜１０ｃと接続するための共通金属板
１５を必要とし、該共通金属板１５にコレクタ、エミッ
タ内部電極１１ａ〜ｌｌｃ、１０ａ〜１０Ｃを半田付等
により接続配線しなければならず、このためＩＯＡを超
える中容量の電力用半導体装置に関しては構造が複雑に
なり、かつ組立時の接続配線の作業に多大な時間を要す
ると共に小形軽量化が妨げられていた。
〔発明の概要〕
この発明は、以上のような従来の状況に鑑みてなされた
もので、絶縁形成熱基板上の金属箔のパターン配線され
た導電層部分に、太線のアルミワイヤを超音波ワイヤボ
ンディングするかまたは金属板を固着することにより、
パターン配線の導電層の許容電流容量を上げることがで
き、また電力用半導体素子の内部電極を接続する共通金
属電極を廃止し、組立時の接続配線作業を容易にして、
組立作業性の向上及び装置の小形軽量化を図ることので
きる電力用半導体装置を提供することを目的としている
。
〔発明の実施例〕
以下この発明の実施例を図について説明する。
第４図は本発明の一実施例による絶縁形成熱基板を使用
した中容量（１０Ａ〜３０Ａ）の電力用トランジスタモ
ジュールの内部構造を示す斜視図である。図において、
１２はその表面にパターン配線された絶縁形の放熱基板
、３ａ、３ｂは該放熱基板１２のパターン配線面上に固
着された電力用半導体素子、４は該電力用半導体素子３
ａ、３ｂと各電極とを超音波ワイヤボンディングにより
接続する太線のアルミワイヤ、５はベース入力信号端子
、６はエミッタ入力信号端子、７は直流正端子、８は直
流負端子、９ａ〜９ｃは３相交流電動機に接続される交
流端子である。
また１３ａ、１３ｂは各々電力用半導体素子３ａ＋３ｂ
のコレクタ、エミッタ内部電極を直流圧。
負端子７，８に接続するパターン配線された導電層、１
４は該導電層１３ａ、１３ｂの許容電流容量を大きくす
るために、該導電層１３ａ、１３ｂ上に超音波ワイヤボ
ンディングされた金属導体である太線（３００μφ〜６
００μφ）のアルミワイヤである。
このように本実施例では、大電流が流れる金属箔のパタ
ーン配線された導電層１３ａ、１３ｂの上面に太線アル
ミワイヤ１４を超音波ワイヤボンディングしたので、従
来のような電力用半導体素子のコレクタ、エミッタ内部
電極を直流端子に接続する共通金属電極板を省略するこ
とができ、中容量の電力用半導体装置の構造を簡素化で
きるとともに組立作業を容易にでき、さらに小形軽量化
することができる。
なお、上記実施例では導電層１３ａ、１３ｂ上に金属導
体としてアルミワイヤ１４をボンディングした場合につ
いて説明したが、アルミワイヤの代わりに金属板を固着
してもよく、このようにしても上記実施例と同様の効果
を奏する。
〔発明の効果〕
以上のように本発明に係る半導体装置によれば、半導体
素子と直流電力端子とを接続する導電層上に金属導体を
固着形成したので、導電層の電流容量を大きくできる効
果があり、また装置の組立作業性を向上できるとともに
小形軽量化できる効果がある。
【図面の簡単な説明】
第１図は従来及び本発明の一実施例による３相インバー
タブリツジの回路図、第２図は従来の半導体装置の内部
構造を示す斜視図、第３図はその直流正端子及び電力用
半導体素子の内部電極部分の構造を示す要部拡大斜視図
、第４図はこの発明の一実施例による半導体装置の内部
構造を示す斜視図である。 ７．８・・・正、負側直流電力端子、１２・・・絶縁形
成熱基板、１３ａ、１３ｂ・・・導電層、１４・・・金
属導体（アルミワイヤ）。 なお図中、同一符号は同−又は相当部分を示す。 代理人　大岩増雄 第１図 手続補正書（自発） ２、発明の名称 半導体装置 ３、補正をする者 代表者片由仁へ部 ４、代理人 ５、補正の対象 明細書の発明の詳細な説明の欄 ６、補正の内容 ＋１１　明細書第３頁第１５行〜第１Ｉｌ１行の「第１
図の・・・・・・３ｂと」を「第１図のトランジスタＱ
２゜Ｑ４．Ｑ６に相当する半導体素子３ｂとエミッタ内
部電極１０８〜１０ｃと、トランジスタＱＩＱ３．Ｑ５
に相当する半導体素子３ａと」に訂正する。 以　上

Claims (1)

    【特許請求の範囲】
  1. （１）絶縁形成熱基板と、該基板上に固着された大電流
    を供給遮断するための半導体素子と、上記基板上に設け
    られ上記半導体素子の一端と正又は負側直流電力端子と
    の間をパターン配線する導電層と、上記導電層上にその
    全長にわたり固着形成された金属導体とを備えたことを
    特徴とする半導体装置。
JP59095113A 1984-05-11 1984-05-11 半導体装置 Pending JPS60239051A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59095113A JPS60239051A (ja) 1984-05-11 1984-05-11 半導体装置
KR1019850002304A KR900000206B1 (ko) 1984-05-11 1985-04-06 전력용 반도체 모듈의 배선구조
DE19853516995 DE3516995A1 (de) 1984-05-11 1985-05-10 Halbleitereinrichtung
US07/067,388 US5038194A (en) 1984-05-11 1987-06-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59095113A JPS60239051A (ja) 1984-05-11 1984-05-11 半導体装置

Publications (1)

Publication Number Publication Date
JPS60239051A true JPS60239051A (ja) 1985-11-27

Family

ID=14128788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59095113A Pending JPS60239051A (ja) 1984-05-11 1984-05-11 半導体装置

Country Status (4)

Country Link
US (1) US5038194A (ja)
JP (1) JPS60239051A (ja)
KR (1) KR900000206B1 (ja)
DE (1) DE3516995A1 (ja)

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Also Published As

Publication number Publication date
US5038194A (en) 1991-08-06
KR850008557A (ko) 1985-12-18
DE3516995A1 (de) 1985-11-14
KR900000206B1 (ko) 1990-01-23
DE3516995C2 (ja) 1993-06-24

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