JPH064595Y2 - ハイブリッドｉｃ - Google Patents

ハイブリッドｉｃ

Info

Publication number
JPH064595Y2
JPH064595Y2 JP1988023962U JP2396288U JPH064595Y2 JP H064595 Y2 JPH064595 Y2 JP H064595Y2 JP 1988023962 U JP1988023962 U JP 1988023962U JP 2396288 U JP2396288 U JP 2396288U JP H064595 Y2 JPH064595 Y2 JP H064595Y2
Authority
JP
Japan
Prior art keywords
base ribbon
hybrid
insulating sheet
ribbon
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1988023962U
Other languages
English (en)
Other versions
JPH01127251U (ja
Inventor
忠文 田代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1988023962U priority Critical patent/JPH064595Y2/ja
Priority to JP63327960A priority patent/JP2763901B2/ja
Priority to DE3903273A priority patent/DE3903273C2/de
Priority to US07/305,636 priority patent/US4905048A/en
Priority to EP89301496A priority patent/EP0330372A3/en
Priority to US07/314,503 priority patent/US4949220A/en
Publication of JPH01127251U publication Critical patent/JPH01127251U/ja
Application granted granted Critical
Publication of JPH064595Y2 publication Critical patent/JPH064595Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49531—Additional leads the additional leads being a wiring board
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Description

【考案の詳細な説明】 〔産業上の利用分野〕 本考案は放熱板付の小型で高密度のハイブリッドＩＣに
関するものであり、特に放熱板付き樹脂封止型のハイブ
リッドＩＣに関する。
〔従来の技術〕
近年、ハイブリッドＩＣは、ＩＣ、トランジスタ、コン
デンサ、抵抗器及びコイル等を高密度に実装したものが
増加している。第３図は従来のハイブリッドＩＣの樹脂
封止前の平面図である。図において、１１はベースリボ
ン、４は絶縁シート、５は導体、６はＩＣチップ、７は
セラミックチップコンデンサ、８は抵抗器であって、絶
縁シート４の接続電極とベースリボンの端子３との間は
ボンディングワイヤ１４で接続されている。
〔考案が解決しようとする問題点〕
上述した従来のハイブリッドＩＣは、発熱の大きいパワ
ー部品はほとんど外付けとなり、装置電子回路部の部品
点数の低減、小型化が容易でないといった欠点があっ
た。
〔問題点を解決するための手段〕
上記問題点に対し本考案のハイブリッドＩＣは、搭載部
品エリアを直接ベースリボン端子部に接続し、搭載部品
エリアを広くとり、さらに、ベースリボンには放熱板を
備え、この放熱板にパワー部品を搭載している。
〔実施例〕
次に、本考案を実施例により説明する。
第１図は本考案の一実施例の樹脂封止前の平面図であ
る。第１図において、１はベースリボンで、ベースリボ
ン面よりディンプル加工で一段凹ませてあるベースリボ
ンの絶縁シート搭載部上には、配線導体５が形成され、
さらに、ＩＣチップ６、チップコンデンサ７、抵抗器８
などが搭載された絶縁シート４が貼り付けられている。
また、絶縁シート４の下辺に並んでいる接続電極には、
ベースリボンの端子３が直接接続されている。さらに、
ベースリボンには放熱板２を有し、その上には発熱の大
きいパワー部品９が搭載されていて、パワー部品９の電
極と絶縁シート４上の接続電極との間はボンディングワ
イヤ１０により電気接続がとられている。それから、こ
れらは樹脂（図示せず）封止され、ベースリボンで一体
であった多数の端子３は個々に切り離されて、パワー部
品を含むハイブリッドＩＣが完成される。
第２図は本考案の他の実施例の平面図であって、本例を
第１図の例に比べると、第１図では放熱板上に１個のパ
ワー部品が搭載されていたのに対し、本例では３個のパ
ワー部品９ａ，９ｂ，９ｃが絶縁部材２ａを介して放熱
板２の上に搭載されていることに違いがあり、その他は
同じである。このように、放熱板上には複数個のパワー
部品も搭載できる。
〔考案の効果〕
以上説明したように本考案は放熱板を設けることにより
これまで搭載できなかったパワー部品も可能となり、装
置の電子回路部の部品点数の低減、小型化が図れるとい
った効果がある。
【図面の簡単な説明】
第１図および第２図はそれぞれ本考案の一実施例および
他の実施例の平面図、第３図は従来のハイブリッドＩＣ
の樹脂封止前の平面図である。 １……ベースリボン、２……放熱板、３……ベースリボ
ンの端子、４……絶縁シート、５……配線導体、６……
ＩＣチップ、７……チップコンデンサ、８……抵抗器、
９……パワー部品、１０……ボンディングワイヤ。

Claims (1)

    【実用新案登録請求の範囲】
  1. 【請求項１】配線導体が形成され、さらに能動素子およ
    び受動素子が搭載されている絶縁シートがベースリボン
    上に貼り付けられ、前記ベースリボンの端子が前記絶縁
    シートに直接接続された後、樹脂封止されたハイブリッ
    ドＩＣにおいて、前記ベースリボンは放熱板を有し、こ
    の放熱板の上に能動および受動のパワー部品が搭載され
    ていることを特徴とするハイブリッドＩＣ。
JP1988023962U 1988-02-05 1988-02-24 ハイブリッドｉｃ Expired - Lifetime JPH064595Y2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP1988023962U JPH064595Y2 (ja) 1988-02-24 1988-02-24 ハイブリッドｉｃ
JP63327960A JP2763901B2 (ja) 1988-02-05 1988-12-27 画像形成装置
DE3903273A DE3903273C2 (de) 1988-02-24 1989-02-03 Farbkopiergerät
US07/305,636 US4905048A (en) 1988-02-05 1989-02-03 Color copying apparatus
EP89301496A EP0330372A3 (en) 1988-02-24 1989-02-16 Hybrid ic with heat sink
US07/314,503 US4949220A (en) 1988-02-24 1989-02-23 Hybrid IC with heat sink

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988023962U JPH064595Y2 (ja) 1988-02-24 1988-02-24 ハイブリッドｉｃ

Publications (2)

Publication Number Publication Date
JPH01127251U JPH01127251U (ja) 1989-08-31
JPH064595Y2 true JPH064595Y2 (ja) 1994-02-02

Family

ID=12125176

Family Applications (2)

Application Number Title Priority Date Filing Date
JP1988023962U Expired - Lifetime JPH064595Y2 (ja) 1988-02-05 1988-02-24 ハイブリッドｉｃ
JP63327960A Expired - Fee Related JP2763901B2 (ja) 1988-02-05 1988-12-27 画像形成装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP63327960A Expired - Fee Related JP2763901B2 (ja) 1988-02-05 1988-12-27 画像形成装置

Country Status (3)

Country Link
US (1) US4949220A (ja)
EP (1) EP0330372A3 (ja)
JP (2) JPH064595Y2 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0671061B2 (ja) * 1989-05-22 1994-09-07 株式会社東芝 樹脂封止型半導体装置
US5119266A (en) * 1989-12-29 1992-06-02 Ail Systems, Inc. (Subsidiary Of Eaton Corp.) Electromagnetic interference filter protection circuit
US5153449A (en) * 1990-08-28 1992-10-06 Milwaukee Electric Tool Corporation Heatsink bus for electronic switch
IT1250405B (it) * 1991-01-31 1995-04-07 Sgs Thomson Microelectronics Piastrina metallica di dissipazione del calore di un dispositivo a semiconduttore di potenza incapsulato in resina fornita di rilievi per la saldatura dei fili di massa
JPH0582685A (ja) * 1991-09-24 1993-04-02 Mitsubishi Electric Corp 混成集積部品の放熱部および端子部用構造体とその構造体を用いた混成集積部品の製造方法
US5170930A (en) * 1991-11-14 1992-12-15 Microelectronics And Computer Technology Corporation Liquid metal paste for thermal and electrical connections
US5328870A (en) * 1992-01-17 1994-07-12 Amkor Electronics, Inc. Method for forming plastic molded package with heat sink for integrated circuit devices
JPH06120374A (ja) * 1992-03-31 1994-04-28 Amkor Electron Inc 半導体パッケージ構造、半導体パッケージ方法及び半導体パッケージ用放熱板
US5328087A (en) * 1993-03-29 1994-07-12 Microelectronics And Computer Technology Corporation Thermally and electrically conductive adhesive material and method of bonding with same
US5445308A (en) * 1993-03-29 1995-08-29 Nelson; Richard D. Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal
US5701034A (en) * 1994-05-03 1997-12-23 Amkor Electronics, Inc. Packaged semiconductor die including heat sink with locking feature
EP0698922B1 (en) * 1994-08-12 2001-06-06 STMicroelectronics S.r.l. Leadframe for supporting integrated semiconductor devices
JP3286106B2 (ja) * 1995-03-01 2002-05-27 株式会社日立製作所 スイッチング電源装置
US6261867B1 (en) 1998-03-13 2001-07-17 Stratedge Corporation Method of making a package for microelectronic devices using iron oxide as a bonding agent
US6469907B1 (en) 2000-10-23 2002-10-22 Team Pacific, Corporation Packaging for power and other circuitry
JP3906767B2 (ja) 2002-09-03 2007-04-18 株式会社日立製作所 自動車用電子制御装置
US8979353B2 (en) 2011-08-11 2015-03-17 Starlights, Inc. Light fixture having modular accessories and method of forming same
US11201101B2 (en) * 2017-10-26 2021-12-14 Shindengen Electric Manufacturing Co., Ltd. Electronic component

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669858A (en) * 1979-11-13 1981-06-11 Tohoku Metal Ind Ltd Hybrid integrated circuit with power transistor and its manufacture
JPS56133857A (en) * 1980-03-25 1981-10-20 Fujitsu Ltd Manufacture of hybrid ic
JPS5833953A (ja) * 1981-08-18 1983-02-28 Mitsubishi Electric Corp 可変速電動工具用半導体電圧制御装置
JPS5839018A (ja) * 1981-09-02 1983-03-07 Mitsubishi Electric Corp 混成集積回路の組立方法
JPS58198062A (ja) * 1982-05-15 1983-11-17 Canon Inc カラ−複写装置
DE3241509A1 (de) * 1982-11-10 1984-05-10 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungstransistor-modul
US4521828A (en) * 1982-12-23 1985-06-04 At&T Technologies, Inc. Component module for piggyback mounting on a circuit package having dual-in-line leads
JPS60123877A (ja) * 1983-12-09 1985-07-02 Canon Inc 画像記録装置
JPS60258566A (ja) * 1984-12-20 1985-12-20 Konishiroku Photo Ind Co Ltd 複写機
JPS61170052A (ja) * 1985-01-23 1986-07-31 Toshiba Corp 電力用樹脂封止型半導体装置
JPS61218136A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd パワ−アレイの製造方法
JPS62118366A (ja) * 1985-11-18 1987-05-29 Ricoh Co Ltd 複写装置

Also Published As

Publication number Publication date
JP2763901B2 (ja) 1998-06-11
EP0330372A2 (en) 1989-08-30
JPH01127251U (ja) 1989-08-31
US4949220A (en) 1990-08-14
JPH01302277A (ja) 1989-12-06
EP0330372A3 (en) 1990-06-13

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