JPS56133857A - Manufacture of hybrid ic - Google Patents

Manufacture of hybrid ic

Info

Publication number
JPS56133857A
JPS56133857A JP3694380A JP3694380A JPS56133857A JP S56133857 A JPS56133857 A JP S56133857A JP 3694380 A JP3694380 A JP 3694380A JP 3694380 A JP3694380 A JP 3694380A JP S56133857 A JPS56133857 A JP S56133857A
Authority
JP
Japan
Prior art keywords
heat sink
hybrid
bonded
coated
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3694380A
Other languages
Japanese (ja)
Inventor
Ryoichi Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3694380A priority Critical patent/JPS56133857A/en
Publication of JPS56133857A publication Critical patent/JPS56133857A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve heat dissipating property and obtain a hybrid IC of high power by a method wherein after the whole surface of an IC substrate having a lead terminal and a heat sink has been coated with resin, a portion of the heat sink is exposed, and an external heat sink is bonded to said exposed portion. CONSTITUTION:A lead terminal 9 is attached to one side of a substrate 6 mounted with hybrid circuit elements 7 and 8, and a heat sink 10 to the back surface. The whole surfaces except for the end portion a of the terminal 9 are coated with epoxy resin 11. Then, a hole 12 is made to expose a portion of the heat sink 10, and through said hole, an external heat sink 13 is bonded to the heat sink 10. Thereby, heat dissipating property is improved, and a hybrid IC of high power can be obtained.
JP3694380A 1980-03-25 1980-03-25 Manufacture of hybrid ic Pending JPS56133857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3694380A JPS56133857A (en) 1980-03-25 1980-03-25 Manufacture of hybrid ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3694380A JPS56133857A (en) 1980-03-25 1980-03-25 Manufacture of hybrid ic

Publications (1)

Publication Number Publication Date
JPS56133857A true JPS56133857A (en) 1981-10-20

Family

ID=12483824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3694380A Pending JPS56133857A (en) 1980-03-25 1980-03-25 Manufacture of hybrid ic

Country Status (1)

Country Link
JP (1) JPS56133857A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0330372A2 (en) * 1988-02-24 1989-08-30 Nec Corporation Hybrid ic with heat sink
US6249050B1 (en) * 1997-02-25 2001-06-19 Micron Technology, Inc. Encapsulated transfer molding of a semiconductor die with attached heat sink
US6444501B1 (en) 2001-06-12 2002-09-03 Micron Technology, Inc. Two stage transfer molding method to encapsulate MMC module
USRE39957E1 (en) * 2001-08-08 2007-12-25 Siliconware Precision Industries Co., Ltd. Method of making semiconductor package with heat spreader
FR2965699A1 (en) * 2010-10-05 2012-04-06 Commissariat Energie Atomique DEVICE FOR THERMAL DISSIPATION FOR AT LEAST ONE ELECTRONIC COMPONENT AND CORRESPONDING METHOD

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0330372A2 (en) * 1988-02-24 1989-08-30 Nec Corporation Hybrid ic with heat sink
US6583504B2 (en) 1997-02-25 2003-06-24 Micron Technology, Inc. Semiconductor die with attached heat sink and transfer mold
US6373132B2 (en) 1997-02-25 2002-04-16 Micron Technology, Inc. Semiconductor die with attached heat sink and transfer mold
US6403387B1 (en) * 1997-02-25 2002-06-11 Micron Technology Method and apparatus for transfer molding encapsulation of a semiconductor die with attached heat sink
US6249050B1 (en) * 1997-02-25 2001-06-19 Micron Technology, Inc. Encapsulated transfer molding of a semiconductor die with attached heat sink
US6869811B2 (en) 1997-02-25 2005-03-22 Micron Technology, Inc. Methods for transfer molding encapsulation of a semiconductor die with attached heat sink
US6444501B1 (en) 2001-06-12 2002-09-03 Micron Technology, Inc. Two stage transfer molding method to encapsulate MMC module
US6538311B2 (en) 2001-06-12 2003-03-25 Micron Technology, Inc. Two-stage transfer molding method to encapsulate MMC module
US6730995B2 (en) 2001-06-12 2004-05-04 Micron Technology, Inc. Two-stage transfer molding device to encapsulate MMC module
US6764882B2 (en) 2001-06-12 2004-07-20 Micron Technology, Inc. Two-stage transfer molding method to encapsulate MMC module
US7279781B2 (en) 2001-06-12 2007-10-09 Micron Technology, Inc. Two-stage transfer molding device to encapsulate MMC module
US7288441B2 (en) 2001-06-12 2007-10-30 Micron Technology, Inc. Method for two-stage transfer molding device to encapsulate MMC module
USRE39957E1 (en) * 2001-08-08 2007-12-25 Siliconware Precision Industries Co., Ltd. Method of making semiconductor package with heat spreader
FR2965699A1 (en) * 2010-10-05 2012-04-06 Commissariat Energie Atomique DEVICE FOR THERMAL DISSIPATION FOR AT LEAST ONE ELECTRONIC COMPONENT AND CORRESPONDING METHOD

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