DE68910360T2 - Methode zur Herstellung eines MOS-Halbleiter-Leistungsbauelementes (HIMOS) mit Leitfähigkeitsmodulation. - Google Patents

Methode zur Herstellung eines MOS-Halbleiter-Leistungsbauelementes (HIMOS) mit Leitfähigkeitsmodulation.

Info

Publication number
DE68910360T2
DE68910360T2 DE89200717T DE68910360T DE68910360T2 DE 68910360 T2 DE68910360 T2 DE 68910360T2 DE 89200717 T DE89200717 T DE 89200717T DE 68910360 T DE68910360 T DE 68910360T DE 68910360 T2 DE68910360 T2 DE 68910360T2
Authority
DE
Germany
Prior art keywords
himos
producing
power component
semiconductor power
mos semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89200717T
Other languages
English (en)
Other versions
DE68910360D1 (de
Inventor
Salvatore Musumeci
Cesare Ronsisvalle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Application granted granted Critical
Publication of DE68910360D1 publication Critical patent/DE68910360D1/de
Publication of DE68910360T2 publication Critical patent/DE68910360T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs
DE89200717T 1988-03-29 1989-03-21 Methode zur Herstellung eines MOS-Halbleiter-Leistungsbauelementes (HIMOS) mit Leitfähigkeitsmodulation. Expired - Fee Related DE68910360T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20005/88A IT1218200B (it) 1988-03-29 1988-03-29 Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti

Publications (2)

Publication Number Publication Date
DE68910360D1 DE68910360D1 (de) 1993-12-09
DE68910360T2 true DE68910360T2 (de) 1994-03-31

Family

ID=11163042

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89200717T Expired - Fee Related DE68910360T2 (de) 1988-03-29 1989-03-21 Methode zur Herstellung eines MOS-Halbleiter-Leistungsbauelementes (HIMOS) mit Leitfähigkeitsmodulation.

Country Status (6)

Country Link
US (1) US5073511A (de)
EP (1) EP0335445B1 (de)
JP (1) JP3012246B2 (de)
KR (1) KR890015353A (de)
DE (1) DE68910360T2 (de)
IT (1) IT1218200B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JPH0691263B2 (ja) * 1988-10-19 1994-11-14 株式会社東芝 半導体装置の製造方法
IT1241049B (it) * 1990-03-08 1993-12-29 Cons Ric Microelettronica Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione
WO1992020007A1 (en) * 1991-05-07 1992-11-12 Inframetrics, Inc. Apparatus for operating a conventional film camera in an electronic mode operation
JP2810821B2 (ja) * 1992-03-30 1998-10-15 三菱電機株式会社 半導体装置及びその製造方法
EP0671770B1 (de) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Mehrschichtige Epitaxie für eine Siliziumdiode
US5892787A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
EP0725446A1 (de) * 1995-02-02 1996-08-07 Motorola, Inc. Bipolare Halbleiteranordnung mit isolierter Gateelektrode und Verfahren zur Herstellung
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
US5872028A (en) * 1996-09-05 1999-02-16 Harris Corporation Method of forming power semiconductor devices with controllable integrated buffer
DE19811297B4 (de) 1997-03-17 2009-03-19 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
KR20020045241A (ko) * 2000-12-08 2002-06-19 윤종용 공기조화기의 표시부 전원제어장치
WO2004102671A1 (en) * 2003-05-19 2004-11-25 Stmicroelectronics S.R.L. Power device with high switching speed and manufacturing method thereof
EP4084070A4 (de) * 2019-12-28 2024-02-07 Keming Wang Neue prinzipien und technologie für halbleiterelektronik und vorrichtung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
FR2535901A1 (fr) * 1982-11-10 1984-05-11 Silicium Semiconducteur Ssc Thyristor asymetrique a forte tenue en tension inverse
JPS60260152A (ja) * 1984-06-07 1985-12-23 Nec Corp 半導体装置
JPS6134753A (ja) * 1984-07-25 1986-02-19 Hitachi Ltd 回転ヘツド型磁気記録再生装置
JPS6134753U (ja) * 1984-07-31 1986-03-03 株式会社明電舎 半導体装置
US4696701A (en) * 1986-11-12 1987-09-29 Motorola, Inc. Epitaxial front seal for a wafer

Also Published As

Publication number Publication date
KR890015353A (ko) 1989-10-30
IT8820005A0 (it) 1988-03-29
US5073511A (en) 1991-12-17
JP3012246B2 (ja) 2000-02-21
EP0335445B1 (de) 1993-11-03
IT1218200B (it) 1990-04-12
DE68910360D1 (de) 1993-12-09
EP0335445A1 (de) 1989-10-04
JPH0210874A (ja) 1990-01-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee