KR890015364A - 전도도 변조형 mosfet의 제조방법 - Google Patents

전도도 변조형 mosfet의 제조방법

Info

Publication number
KR890015364A
KR890015364A KR1019890002652A KR890002652A KR890015364A KR 890015364 A KR890015364 A KR 890015364A KR 1019890002652 A KR1019890002652 A KR 1019890002652A KR 890002652 A KR890002652 A KR 890002652A KR 890015364 A KR890015364 A KR 890015364A
Authority
KR
South Korea
Prior art keywords
mosfet
manufacturing
conductivity modulating
modulating
manufacturing conductivity
Prior art date
Application number
KR1019890002652A
Other languages
English (en)
Other versions
KR930000606B1 (ko
Inventor
야스가스 새끼
Original Assignee
후지덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지덴끼 가부시끼가이샤 filed Critical 후지덴끼 가부시끼가이샤
Publication of KR890015364A publication Critical patent/KR890015364A/ko
Application granted granted Critical
Publication of KR930000606B1 publication Critical patent/KR930000606B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
KR1019890002652A 1988-03-03 1989-03-03 전도도 변조형 mosfet의 제조방법 KR930000606B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP88-50515 1988-03-03
JP63050515A JPH0734474B2 (ja) 1988-03-03 1988-03-03 伝導度変調型ｍｏｓｆｅｔの製造方法

Publications (2)

Publication Number Publication Date
KR890015364A true KR890015364A (ko) 1989-10-30
KR930000606B1 KR930000606B1 (ko) 1993-01-25

Family

ID=12861110

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890002652A KR930000606B1 (ko) 1988-03-03 1989-03-03 전도도 변조형 mosfet의 제조방법

Country Status (3)

Country Link
US (1) US5034336A (ko)
JP (1) JPH0734474B2 (ko)
KR (1) KR930000606B1 (ko)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173435A (en) * 1987-11-11 1992-12-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
KR910010748A (ko) * 1989-11-30 1991-06-29 정몽헌 적층형 캐패시터 및 제조방법
US5068707A (en) * 1990-05-02 1991-11-26 Nec Electronics Inc. DRAM memory cell with tapered capacitor electrodes
DE69029942T2 (de) * 1990-10-16 1997-08-28 Cons Ric Microelettronica Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom
US5182222A (en) * 1991-06-26 1993-01-26 Texas Instruments Incorporated Process for manufacturing a DMOS transistor
JP2689047B2 (ja) * 1991-07-24 1997-12-10 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタとその製造方法
US5268586A (en) * 1992-02-25 1993-12-07 North American Philips Corporation Vertical power MOS device with increased ruggedness and method of fabrication
US5321281A (en) * 1992-03-18 1994-06-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of fabricating same
JPH06244429A (ja) * 1992-12-24 1994-09-02 Mitsubishi Electric Corp 絶縁ゲート型半導体装置及びその製造方法
JP3294001B2 (ja) * 1994-06-01 2002-06-17 三菱電機株式会社 絶縁ゲート型半導体装置の製造方法
US5795793A (en) * 1994-09-01 1998-08-18 International Rectifier Corporation Process for manufacture of MOS gated device with reduced mask count
JP3399119B2 (ja) 1994-11-10 2003-04-21 富士電機株式会社 半導体装置およびその製造方法
JP3384198B2 (ja) * 1995-07-21 2003-03-10 三菱電機株式会社 絶縁ゲート型半導体装置およびその製造方法
KR0175276B1 (ko) * 1996-01-26 1999-02-01 김광호 전력반도체장치 및 그의 제조방법
KR100256109B1 (ko) * 1997-05-07 2000-05-01 김덕중 전력 반도체 장치
US6121089A (en) * 1997-10-17 2000-09-19 Intersil Corporation Methods of forming power semiconductor devices having merged split-well body regions therein
DE19840402C2 (de) * 1997-12-12 2003-07-31 Nat Semiconductor Corp Verfahren zum Herstellen einer Struktur eines DMOS-Leistungselementes und Struktur eines DMOS-Leistungselementes
US6197640B1 (en) * 1998-12-21 2001-03-06 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
JP2001024184A (ja) * 1999-07-05 2001-01-26 Fuji Electric Co Ltd 絶縁ゲートトランジスタおよびその製造方法
JP2005057028A (ja) * 2003-08-04 2005-03-03 Sanken Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
US20090309131A1 (en) 2006-05-11 2009-12-17 Stmicroelectronics S.R.L. Igbt transistor with protection against parasitic component activation and manufacturing process thereof
JP5195816B2 (ja) * 2010-05-17 2013-05-15 富士電機株式会社 半導体装置の製造方法
US10218349B2 (en) * 2016-05-17 2019-02-26 Littelfuse, Inc. IGBT having improved clamp arrangement

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4430792A (en) * 1982-07-08 1984-02-14 General Electric Company Minimal mask process for manufacturing insulated-gate semiconductor devices with integral shorts
US4417385A (en) * 1982-08-09 1983-11-29 General Electric Company Processes for manufacturing insulated-gate semiconductor devices with integral shorts
US4466176A (en) * 1982-08-09 1984-08-21 General Electric Company Process for manufacturing insulated-gate semiconductor devices with integral shorts
JPS628568A (ja) * 1985-07-04 1987-01-16 Tdk Corp 縦形半導体装置及びその製造方法
DE3688057T2 (de) * 1986-01-10 1993-10-07 Gen Electric Halbleitervorrichtung und Methode zur Herstellung.
IT1204243B (it) * 1986-03-06 1989-03-01 Sgs Microelettronica Spa Procedimento autoallineato per la fabbricazione di celle dmos di piccole dimensioni e dispositivi mos ottenuti mediante detto procedimento

Also Published As

Publication number Publication date
US5034336A (en) 1991-07-23
KR930000606B1 (ko) 1993-01-25
JPH01225166A (ja) 1989-09-08
JPH0734474B2 (ja) 1995-04-12

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