IT1241049B - Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione - Google Patents

Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione

Info

Publication number
IT1241049B
IT1241049B IT6606A IT660690A IT1241049B IT 1241049 B IT1241049 B IT 1241049B IT 6606 A IT6606 A IT 6606A IT 660690 A IT660690 A IT 660690A IT 1241049 B IT1241049 B IT 1241049B
Authority
IT
Italy
Prior art keywords
semiconductor device
manufacturing process
high reverse
related manufacturing
igbt semiconductor
Prior art date
Application number
IT6606A
Other languages
English (en)
Other versions
IT9006606A0 (it
IT9006606A1 (it
Inventor
Cesare Ronsisvalle
Original Assignee
Cons Ric Microelettronica
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cons Ric Microelettronica filed Critical Cons Ric Microelettronica
Priority to IT6606A priority Critical patent/IT1241049B/it
Publication of IT9006606A0 publication Critical patent/IT9006606A0/it
Priority to EP19910200462 priority patent/EP0445888A3/en
Priority to JP3067634A priority patent/JPH065866A/ja
Publication of IT9006606A1 publication Critical patent/IT9006606A1/it
Application granted granted Critical
Publication of IT1241049B publication Critical patent/IT1241049B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
IT6606A 1990-03-08 1990-03-08 Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione IT1241049B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT6606A IT1241049B (it) 1990-03-08 1990-03-08 Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione
EP19910200462 EP0445888A3 (en) 1990-03-08 1991-03-05 Igbt semiconductor device with high reverse breakdown voltage and related manufaturing process
JP3067634A JPH065866A (ja) 1990-03-08 1991-03-08 半導体デバイス及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT6606A IT1241049B (it) 1990-03-08 1990-03-08 Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione

Publications (3)

Publication Number Publication Date
IT9006606A0 IT9006606A0 (it) 1990-03-08
IT9006606A1 IT9006606A1 (it) 1991-09-08
IT1241049B true IT1241049B (it) 1993-12-29

Family

ID=11121311

Family Applications (1)

Application Number Title Priority Date Filing Date
IT6606A IT1241049B (it) 1990-03-08 1990-03-08 Dispositivo a semiconduttore igbt ad elevata tensione di rottura inversa e relativo processo di fabbricazione

Country Status (3)

Country Link
EP (1) EP0445888A3 (it)
JP (1) JPH065866A (it)
IT (1) IT1241049B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
JPH10209447A (ja) * 1997-01-22 1998-08-07 Toshiba Corp 半導体スイッチ
JP4967200B2 (ja) * 2000-08-09 2012-07-04 富士電機株式会社 逆阻止型ｉｇｂｔを逆並列に接続した双方向ｉｇｂｔ
JP2014049694A (ja) * 2012-09-03 2014-03-17 Renesas Electronics Corp Ｉｇｂｔ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1218200B (it) * 1988-03-29 1990-04-12 Sgs Thomson Microelectronics Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti

Also Published As

Publication number Publication date
IT9006606A0 (it) 1990-03-08
JPH065866A (ja) 1994-01-14
EP0445888A3 (en) 1991-11-13
IT9006606A1 (it) 1991-09-08
EP0445888A2 (en) 1991-09-11

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329