DE60033722D1 - Bildsensoranordnung - Google Patents

Bildsensoranordnung

Info

Publication number
DE60033722D1
DE60033722D1 DE60033722T DE60033722T DE60033722D1 DE 60033722 D1 DE60033722 D1 DE 60033722D1 DE 60033722 T DE60033722 T DE 60033722T DE 60033722 T DE60033722 T DE 60033722T DE 60033722 D1 DE60033722 D1 DE 60033722D1
Authority
DE
Germany
Prior art keywords
image sensor
sensor array
array
image
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60033722T
Other languages
English (en)
Other versions
DE60033722T2 (de
Inventor
Min Cao
Jeremy A Theil
Gary W Ray
Dietrich W Vook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Avago Technologies General IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies General IP Singapore Pte Ltd filed Critical Avago Technologies General IP Singapore Pte Ltd
Application granted granted Critical
Publication of DE60033722D1 publication Critical patent/DE60033722D1/de
Publication of DE60033722T2 publication Critical patent/DE60033722T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
DE60033722T 1999-04-13 2000-04-07 Bildsensoranordnung Expired - Lifetime DE60033722T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US290443 1999-04-13
US09/290,443 US6586812B1 (en) 1999-04-13 1999-04-13 Isolation of alpha silicon diode sensors through ion implantation

Publications (2)

Publication Number Publication Date
DE60033722D1 true DE60033722D1 (de) 2007-04-19
DE60033722T2 DE60033722T2 (de) 2008-01-24

Family

ID=23116024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60033722T Expired - Lifetime DE60033722T2 (de) 1999-04-13 2000-04-07 Bildsensoranordnung

Country Status (4)

Country Link
US (2) US6586812B1 (de)
EP (1) EP1045450B1 (de)
JP (1) JP2000340780A (de)
DE (1) DE60033722T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6016011A (en) * 1999-04-27 2000-01-18 Hewlett-Packard Company Method and apparatus for a dual-inlaid damascene contact to sensor
US20040113220A1 (en) * 2000-12-21 2004-06-17 Peter Rieve Optoelectronic component for conversion electromagnetic radiation into an intensity-dependent photocurrent
EP1364413A1 (de) * 2001-03-01 2003-11-26 STMicroelectronics N.V. Optoelektronisches bauelement
WO2003038901A1 (de) * 2001-10-26 2003-05-08 Stmicroelectronics Nv Verfahren zum herstellen eines tfa-bildsensors sowie tfa-bildsensor
US7282382B2 (en) * 2001-10-29 2007-10-16 Stmicroelectronics N.V. Method for producing a photodiode contact for a TFA image sensor
EP1440476B1 (de) * 2001-10-29 2008-02-13 STMicroelectronics N.V. Verfahren zur herstellung einer photodiodenkontaktierung für einen tfa-bildsensor
EP1483790B1 (de) * 2002-03-03 2006-08-30 Interon AS Aktiverpixelsensormatrix und dessen herstellungsverfahren
WO2004008540A1 (en) * 2002-07-16 2004-01-22 Stmicroelectronics Nv Tfa image sensor with stability-optimized photodiode
GB2392308B (en) 2002-08-15 2006-10-25 Detection Technology Oy Packaging structure for imaging detectors
DE10323584B4 (de) * 2003-05-20 2006-05-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung zur Detektion von Röntgenstrahlung und Verfahren zu deren Herstellung
US7768500B2 (en) * 2003-06-16 2010-08-03 Humanscale Corporation Ergonomic pointing device
IL158345A0 (en) 2003-10-09 2004-05-12 Interon As Pixel detector and method of manufacture and assembly thereof
KR100539253B1 (ko) 2004-03-10 2005-12-27 삼성전자주식회사 폴리실리콘 콘택 스터드를 갖는 ｃｍｏｓ 이미지 디바이스
US7557799B2 (en) 2004-06-17 2009-07-07 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. System for determining pointer position, movement, and angle
EP1677364A1 (de) * 2004-12-30 2006-07-05 St Microelectronics S.A. Lichtdetektor auf einer integrierten Schaltung sitzend
TWI282171B (en) * 2005-12-28 2007-06-01 Powerchip Semiconductor Corp Image sensor and fabricating method thereof
KR100851758B1 (ko) * 2007-03-14 2008-08-11 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
KR100872990B1 (ko) * 2007-03-19 2008-12-08 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조 방법
KR100872719B1 (ko) * 2007-04-17 2008-12-05 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
KR100871973B1 (ko) * 2007-04-23 2008-12-08 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
KR100868651B1 (ko) * 2007-05-17 2008-11-12 주식회사 동부하이텍 이미지 센서 및 그 제조방법
KR100922935B1 (ko) * 2007-11-05 2009-10-22 주식회사 동부하이텍 이미지센서 및 그 제조방법
KR101002121B1 (ko) * 2007-12-27 2010-12-16 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5155808B2 (ja) * 2008-10-08 2013-03-06 株式会社日立製作所 半導体放射線検出器および核医学診断装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154961A (ja) 1982-03-10 1983-09-14 Fujitsu Ltd 秘匿通話方法
JPS6047574A (ja) 1983-08-26 1985-03-14 Toshiba Corp 固体撮像装置
JPS6292365A (ja) * 1985-10-18 1987-04-27 Fuji Photo Film Co Ltd 半導体装置およびその製造方法
JPS62122268A (ja) * 1985-11-22 1987-06-03 Fuji Photo Film Co Ltd 固体撮像素子
JPH0682821B2 (ja) * 1988-04-13 1994-10-19 工業技術院長 固体撮像装置
JPH02192166A (ja) 1989-01-20 1990-07-27 Fujitsu Ltd 半導体装置の製造方法
JPH04137664A (ja) * 1990-09-28 1992-05-12 Canon Inc 光電変換装置
JP2765635B2 (ja) 1991-01-11 1998-06-18 キヤノン株式会社 光電変換装置
JPH0513748A (ja) * 1991-07-03 1993-01-22 Canon Inc 固体撮像素子
JPH06151801A (ja) * 1992-11-13 1994-05-31 Canon Inc 光電変換装置及び光電変換装置の製造方法
US5605856A (en) * 1995-03-14 1997-02-25 University Of North Carolina Method for designing an electronic integrated circuit with optical inputs and outputs
WO1998047181A1 (de) * 1997-04-14 1998-10-22 Boehm Markus Elektromagnetischer strahlungssensor mit hohem lokalkontrast
SE511570C2 (sv) 1997-07-11 1999-10-25 Flaekt Ab Anordning vid renrumsfilter
US5936261A (en) * 1998-11-18 1999-08-10 Hewlett-Packard Company Elevated image sensor array which includes isolation between the image sensors and a unique interconnection

Also Published As

Publication number Publication date
EP1045450A2 (de) 2000-10-18
US6586812B1 (en) 2003-07-01
DE60033722T2 (de) 2008-01-24
US20030107100A1 (en) 2003-06-12
EP1045450A3 (de) 2002-05-29
JP2000340780A (ja) 2000-12-08
EP1045450B1 (de) 2007-03-07
US6759724B2 (en) 2004-07-06

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: MICRON TECHNOLOGY, INC., BOISE, ID., US

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: APTINA IMAGING CORP., GRAND CAYMAN, CAYMAN ISL, KY