DE60031590D1 - Bildsensor - Google Patents

Bildsensor

Info

Publication number
DE60031590D1
DE60031590D1 DE60031590T DE60031590T DE60031590D1 DE 60031590 D1 DE60031590 D1 DE 60031590D1 DE 60031590 T DE60031590 T DE 60031590T DE 60031590 T DE60031590 T DE 60031590T DE 60031590 D1 DE60031590 D1 DE 60031590D1
Authority
DE
Germany
Prior art keywords
image sensor
sensor
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60031590T
Other languages
English (en)
Other versions
DE60031590T2 (de
Inventor
Eric Ying-Chin Chou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE60031590D1 publication Critical patent/DE60031590D1/de
Publication of DE60031590T2 publication Critical patent/DE60031590T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
DE60031590T 1999-02-02 2000-01-25 Bildsensor Expired - Lifetime DE60031590T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US243186 1999-02-02
US09/243,186 US6252218B1 (en) 1999-02-02 1999-02-02 Amorphous silicon active pixel sensor with rectangular readout layer in a hexagonal grid layout

Publications (2)

Publication Number Publication Date
DE60031590D1 true DE60031590D1 (de) 2006-12-14
DE60031590T2 DE60031590T2 (de) 2007-08-16

Family

ID=22917678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60031590T Expired - Lifetime DE60031590T2 (de) 1999-02-02 2000-01-25 Bildsensor

Country Status (4)

Country Link
US (1) US6252218B1 (de)
EP (1) EP1026747B1 (de)
JP (1) JP4366702B2 (de)
DE (1) DE60031590T2 (de)

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US7518645B2 (en) * 2005-01-06 2009-04-14 Goodrich Corp. CMOS active pixel sensor with improved dynamic range and method of operation
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US8487231B2 (en) * 2007-03-05 2013-07-16 Arokia Nathan Sensor pixels, arrays and array systems and methods therefor
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KR100894391B1 (ko) * 2007-06-12 2009-04-20 주식회사 동부하이텍 이미지 센서 및 그 제조방법
US7924333B2 (en) 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
KR100906060B1 (ko) * 2007-09-28 2009-07-03 주식회사 동부하이텍 이미지 센서 및 그 제조방법
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
KR100858034B1 (ko) * 2007-10-18 2008-09-10 (주)실리콘화일 단일 칩 활력 이미지 센서
KR100898477B1 (ko) * 2007-10-31 2009-05-21 주식회사 동부하이텍 이미지 센서 및 그 제조방법
KR100850383B1 (ko) * 2007-12-27 2008-08-04 주식회사 동부하이텍 이미지 센서 및 그 제조방법
KR100856948B1 (ko) * 2007-12-27 2008-09-04 주식회사 동부하이텍 이미지 센서 제조방법
KR100856949B1 (ko) * 2007-12-27 2008-09-04 주식회사 동부하이텍 이미지센서의 제조방법
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Also Published As

Publication number Publication date
US6252218B1 (en) 2001-06-26
EP1026747A2 (de) 2000-08-09
JP4366702B2 (ja) 2009-11-18
DE60031590T2 (de) 2007-08-16
EP1026747B1 (de) 2006-11-02
JP2000236416A (ja) 2000-08-29
EP1026747A3 (de) 2001-08-16

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE. LT, SG

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MICRON TECHNOLOGY, INC., BOISE, ID., US

8327 Change in the person/name/address of the patent owner

Owner name: APTINA IMAGING CORP., GRAND CAYMAN, CAYMAN ISL, KY