KR960039309A - 반도체 장치 및 반도체 칩 설치 방법 - Google Patents

반도체 장치 및 반도체 칩 설치 방법 Download PDF

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KR960039309A
KR960039309A KR1019960014141A KR19960014141A KR960039309A KR 960039309 A KR960039309 A KR 960039309A KR 1019960014141 A KR1019960014141 A KR 1019960014141A KR 19960014141 A KR19960014141 A KR 19960014141A KR 960039309 A KR960039309 A KR 960039309A
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semiconductor device
wiring pattern
conductive protrusions
package
outermost
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KR1019960014141A
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KR100248682B1 (ko
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슈이찌 마쯔다
카쯔따까 쇼지
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가네꼬 히사시
닛폰 덴키 주식회사
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Abstract

반도체 장치는 전극 패드를 갖는 반도체 칩과, 다수의 절연막으로 구성되어 접착제에 의해 반도체 칩에 부착되는 패키지를 포함한다. 패키지는 다수의 절연막 사이에 놓인 배선 패턴을 포함하며, 배선 패턴은 반도체 칩의 사용 목적에 따라 다수 절연막에 제공된 경유구멍을 통하여 전극 패트 및/또는 다른 배선 패턴에 선택적으로 접속된다. 반도체 장치는 또한 최외각 절연막에 제공된 경유구멍을 통하여 최외각 배선 패턴으로부터 확장하는 다수의 전도성 돌출부를 포함한다.

Description

반도체 장치 및 반도체 칩 설치 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따라 반도체 칩이 반도체 패키지상에 설치된 반도체 장치의 도식적 구성을 설명하는 단면도.

Claims (22)

  1. 반도체 장치에 있어서: 전극 패드를 갖는 반도체 칩과; 다수의 절연막으로 구성되어 접착제에 의해 상기 반도체칩에 부착되는 패키지로서, 상기 패키지는 상기 다수의 절연막 사이에 놓인 배선 패턴을 포함하며, 상기 배선 패턴은 상기 반도체 칩의 사용 목적에 따라 상기 다수의 절연막에 제공된 경유구멍을 통하여 상기 전극 패드 및/또는 상기 배선 패턴과는 다른 배선 패턴에 선택적으로 연결되는, 상기 패키지; 및 최외각 절연막에 제공된 경유구멍을 통해 최외각 배선 패턴으로부터 확장되어 있는 다수의 전도성 돌출부를 구비하는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 패키지는 상기 반도체 칩과 실질적으로 동일한 영역을 갖는 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 배선 패턴은 상기 다수의 절연막중 인접하는 두 절연막 사이의 상기 배선 패턴과는 다른 패턴 전반으로 확장되어 있는 그라운드 라인 배선 패턴을 포함하는 것을 특징으로 하는 반도체 장치.
  4. 제1항 내지 제3항중 어느 한 항에 있어서, 상기 다수의 전도성 돌출부는 최외각 절연막상에 위치된 확장 랜드 부분으로부터 확장되어 있는 것을 특징으로 하는 반도체 장치.
  5. 제4항에 있어서, 상기 각각의 확장 랜드 부분은 상기 최외각 절연막에 제공된 경유구멍보다 영역에 있어 큰 것을 특징으로 하는 반도체 장치.
  6. 제4항에 있어서, 상기 각각의 확장 랜드 부분은 반구 형태를 갖는 것을 특징으로 하는 반도체 장치.
  7. 제1항 내지 제3항중 어느 한 항에 있어서, 상기 다수의 전도성 돌출부를 에워싸며, 상기 최외각 절연막을 덮고 있는 수지층을 더 구비하는 것을 특징으로 하는 반도체 장치.
  8. 제7항에 있어서, 상기 수지층은 접착 성질을 가지므로, 상기 반도체 장치는 또다른 기판에 부착되는 것을 특징으로 하는 반도체 장치.
  9. 제7항에 있어서, 상기 수지층의 물질은 상기 다수의 전도성 돌출부와 같거나 높은 녹는점을 갖는 것을 특징으로 하는 반도체 장치.
  10. 제1항에 있어서, 상기 다수의 전도성 돌출부는 최외각 절연막상에 위치된 확장 랜드 부분으로부터 확장되는 것을 특징으로 하는 반도체 장치.
  11. 제10항에 있어서, 상기 각각의 확장 랜드 부분은 상기 최외각 절연막에 제공된 경유구멍보다 영역에 있는 큰 것을 특징으로 하는 반도체 장치.
  12. 제10항에 있어서, 상기 각각의 확장 랜드 부분은 반구 형태를 갖는 것을 특징으로 하는 반도체 장치.
  13. 제10항 내지 제12항중 어느 한 항에 있어서, 상기 다수의 전도성 돌출부를 에워싸며, 상기 최외각 절연막을 덮고 있는 수지층을 더 구비하는 것을 특징으로 하는 반도체 장치.
  14. 제13항에 있어서, 상기 수지층은 접착 성질을 가지므로, 상기 반도체 장치는 또다른 기판에 부착되는 것을 특징으로 하는 반도체 장치.
  15. 제13항에 있어서, 상기 수지층의 물질은 상기 다수의 전도성 돌출부와 같거나 높은 녹는점을 갖는 것을 특징으로 하는 반도체 장치.
  16. 반도체 장치를 사용하는 장치 제조 방법에 있어서; 전극 패드를 갖는 반도체 칩과 다수의 절연막으로 구성된 패키지를 제공하는 단계로서, 상기 패키지는 상기 다수의 절연막 사이에 놓인 배선 패턴을 포함하며, 상기 배선 패턴은 상기 반도체 칩의 사용 목적에 따라 상기 다수의 절연막에 제공된 경유구멍을 통하여 상기 전극 패드 및/또는 상기 배선 패턴과는 다른 배선 패턴에 선택적으로 접속되는, 상기 단계와; 접착제에 의해 상기 패키지를 상기 반도체 칩에 부착시키는 단계; 및 반도체 장치를 제조하도록 최외각 절연막에 제공된 경유 구멍을 통하여 최외각 배선 패턴으로부터 확장된 다수의 전도성 돌출부를 형성하는 단계를 구비하는 것을 특징으로 하는 제조방법.
  17. 제16항에 있어서, 상기 반도체 칩 및 패키지 제공 단계는 상기 다수의 절연막중 인접하는 두 절연막 사이의 상기 배선 패턴과는 다른 배선 전반에 확장하는 그라운드 라인 배선 패턴을 포함하는 상기 패키지를 제공하는 단계를 포함하는 것을 특징으로 하는 제조 방법.
  18. 제16항에 있어서, 상기 반도체 칩 및 패키지 제공 단계는 상기 다수의 전도성 돌출부에 대해 확장된 랜드 부분을 포함하는 상기 패키지를 제공하는 단계를 포함하며, 상기 확장 랜드 부분은 최외각 절연막에 형성된 경유구멍을 통하여 최외각 배선 패턴에 접속되고 상기 경유구멍 보다도 큰 영역을 갖게 되는 것을 특징으로 하는 제조 방법.
  19. 제16항에 있어서, 상기 다수의 전도성 돌출부를 에워싸며, 상기 최외각 절연막을 덮고 있는 수지층을 형성하는 단계를 더 구비하는 것을 특징으로 하는 제조 방법.
  20. 제19항에 있어서, 반도체 장치를 시험하는 단계; 및 인쇄 회로 기판상에 반도체 장치를 설치하는 단계를 더 구비하는 것을 특징으로 하는 제조 방법.
  21. 제20항에 있어서, 상기 시험 단계는 그 각각이 상기 다수의 전도성 돌출부보다 작은 다수의 돌출 전극을 갖는 시험 탐침을 사용하여 상기 반도체 장치를 시험하는 단계를 포함하는 것을 특징으로 하는 제조 방법.
  22. 제20항에 있어서, 상기 설치 단계는 상기 다수의 돌출부 및 상기 수지층을 용해함으로써, 상기 반도체 장치를 상기 인쇄 회로 기판에 부착하는 단계를 포함하며, 상기 수지층의 물질은 상기 다수의 전도성 돌출부보다 높거나 같은 녹는점을 갖는 것을 특징으로 하는 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960014141A 1995-04-27 1996-04-27 반도체 장치 및 반도체 칩 설치 방법 KR100248682B1 (ko)

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