JPS5518069A - Protective construction of semiconductor device - Google Patents

Protective construction of semiconductor device

Info

Publication number
JPS5518069A
JPS5518069A JP9131678A JP9131678A JPS5518069A JP S5518069 A JPS5518069 A JP S5518069A JP 9131678 A JP9131678 A JP 9131678A JP 9131678 A JP9131678 A JP 9131678A JP S5518069 A JPS5518069 A JP S5518069A
Authority
JP
Japan
Prior art keywords
semiconductor device
film
layers
coated
opened
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9131678A
Other languages
Japanese (ja)
Inventor
Yoshio Iinuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP9131678A priority Critical patent/JPS5518069A/en
Priority to DE19792929339 priority patent/DE2929339A1/en
Priority to GB7925566A priority patent/GB2027272B/en
Publication of JPS5518069A publication Critical patent/JPS5518069A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To simplify the mounting process of an MOS-type semiconductor device having projection electrodes and wiring layers and obtain a strong protective construction, by coating both the sides of the semiconductor device with protective resin films.
CONSTITUTION: Before the projection electrodes 15 and the wiring metal layers 12 are provided on the MOS-type semiconductor device 11, a prescribed wiring aluminium pattern 12 is made first on the device 11. The total surface of the pattern 12 is coated with a PSG passivation film 13. Holes are opened in bonding pad portions. The entire surface of the passivation film 13 is coated with one protective resin film 16. Holes corresponding to the formers are opened in the film 16. CrCuAu layers 14 are provided on the opened portions of the film 16. The projection electrodes 15 of solder are then fixed on the layers 14 so that the electrodes are connected to the wiring metal layers 12. The reverse side of the semiconductor device 11 is coated with another protective resin film 16. Thus, the mounting process is simplified and the protective construction is strengthened to prevent cracks etc.
COPYRIGHT: (C)1980,JPO&Japio
JP9131678A 1978-07-24 1978-07-26 Protective construction of semiconductor device Pending JPS5518069A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9131678A JPS5518069A (en) 1978-07-26 1978-07-26 Protective construction of semiconductor device
DE19792929339 DE2929339A1 (en) 1978-07-24 1979-07-20 SEMICONDUCTOR ARRANGEMENT
GB7925566A GB2027272B (en) 1978-07-24 1979-07-23 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9131678A JPS5518069A (en) 1978-07-26 1978-07-26 Protective construction of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5518069A true JPS5518069A (en) 1980-02-07

Family

ID=14023049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9131678A Pending JPS5518069A (en) 1978-07-24 1978-07-26 Protective construction of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5518069A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188949A (en) * 1983-04-11 1984-10-26 Hitachi Ltd Semiconductor device
KR100239695B1 (en) * 1996-09-11 2000-01-15 김영환 Chip size semiconductor package and its manufacturing method
KR100248682B1 (en) * 1995-04-27 2000-03-15 가네꼬 히사시 Semiconductor device and installing method of semiconductor chip
EP1447844A3 (en) * 2003-02-11 2004-10-06 Axalto S.A. Reinforced semiconductor wafer
US7470979B2 (en) 1996-12-04 2008-12-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7521796B2 (en) 1996-12-04 2009-04-21 Seiko Epson Corporation Method of making the semiconductor device, circuit board, and electronic instrument
JP2010093295A (en) * 2010-01-25 2010-04-22 Rohm Co Ltd Semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188949A (en) * 1983-04-11 1984-10-26 Hitachi Ltd Semiconductor device
KR100248682B1 (en) * 1995-04-27 2000-03-15 가네꼬 히사시 Semiconductor device and installing method of semiconductor chip
KR100239695B1 (en) * 1996-09-11 2000-01-15 김영환 Chip size semiconductor package and its manufacturing method
US7470979B2 (en) 1996-12-04 2008-12-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7511362B2 (en) 1996-12-04 2009-03-31 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7521796B2 (en) 1996-12-04 2009-04-21 Seiko Epson Corporation Method of making the semiconductor device, circuit board, and electronic instrument
US7842598B2 (en) 1996-12-04 2010-11-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7888260B2 (en) 1996-12-04 2011-02-15 Seiko Epson Corporation Method of making electronic device
US8115284B2 (en) 1996-12-04 2012-02-14 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board and electronic instrument
US8384213B2 (en) 1996-12-04 2013-02-26 Seiko Epson Corporation Semiconductor device, circuit board, and electronic instrument
EP1447844A3 (en) * 2003-02-11 2004-10-06 Axalto S.A. Reinforced semiconductor wafer
JP2010093295A (en) * 2010-01-25 2010-04-22 Rohm Co Ltd Semiconductor device

Similar Documents

Publication Publication Date Title
JPS52124865A (en) Semiconductor device
JPS5365088A (en) Semiconductor device
JPS5518069A (en) Protective construction of semiconductor device
JPS53122392A (en) Manufacture for photo electric device
JPS52143785A (en) Semiconductor device
JPS5516415A (en) Diode
JPS5522865A (en) Manufacturing methof of semiconductor device
JPS5563852A (en) Semiconductor device
JPS5344176A (en) Clad solder for semiconductor device
JPS54137971A (en) Resin-sealed type semiconductor device
JPS52150965A (en) Semiconductor device
JPS544067A (en) Electrode forming method of semiconductor device
JPS51132764A (en) Semiconductor device
JPS5419382A (en) Semiconductor device
JPS5379382A (en) Forming method of passivation film
JPS54153574A (en) Manufacture for semiconductor device
JPS5789276A (en) Photo chip element
JPS5748253A (en) Lead frame for semiconductor device
JPS56146256A (en) Hybrid ic device
JPS56164557A (en) Tin bump
JPS5771159A (en) Heterogeneous electroplating method for circuit substrate
JPS52151567A (en) Protecting method of wiring layers
JPS5247384A (en) Semiconductor device
JPS53116073A (en) Semiconductor device
JPS5538018A (en) Multi-layer wiring structure