JPS54153574A - Manufacture for semiconductor device - Google Patents

Abstract

PURPOSE: To establish the semiconductor device high in reliability and without any hindrance to the increase in layered metal.

CONSTITUTION: The first metal layer 13a is formed on the insulation layer 15 (Fig. 4A), the thermoplastic fluorine resin layer 16 is formed so that a part of the layer 13a and the insulation layer 15 are covered, and the fluorine resin is partly molten to make complete the bonding of the ground layers 13a and 15. (Fig. 4B) The opening 17 is provided in the layer 16 by taking the photo resist film 18 as a mask, the surface of a part of the layer 13a is exposed, (Fig. 4C), and after completely removing the film 18, the second metal layer is formed by using electric plating. (Fig. 4D) To form the second metal layer, the metal film 20 is formed entirely on the fluorine resin 16 and the metal layer 13a exposed in the opening 17 (Fig. 4E) and the photo resist film 21 is formed on the film 20, and the opening 22 corresponding to the opening 17 is formed. (Fig. 4F) Further, the increased layer 19 is formed by taking the film 20 as an electrode with electric plating through the coating of gold, and the semiconductor device (Fig. 3) is established, by removing the film 21 and the film 20 not covered with the gold layer 19.

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