JPS5563852A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5563852A
JPS5563852A JP13818078A JP13818078A JPS5563852A JP S5563852 A JPS5563852 A JP S5563852A JP 13818078 A JP13818078 A JP 13818078A JP 13818078 A JP13818078 A JP 13818078A JP S5563852 A JPS5563852 A JP S5563852A
Authority
JP
Japan
Prior art keywords
electrode
barrier metal
coated
salient
piq
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13818078A
Other languages
Japanese (ja)
Inventor
Masao Hayakawa
Takamichi Maeda
Kazuya Fujita
Masao Kumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP13818078A priority Critical patent/JPS5563852A/en
Publication of JPS5563852A publication Critical patent/JPS5563852A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To perform firm bonding and raise the reliability, by coating a high- molecular insulating protective film on the exposed part of a barrier metal interposed between a salient electrode and an electrode pad.
CONSTITUTION: A resist is so coated on the surface of a semiconductor substrate 11 provided with an aluminium electrode pad 13 that the pad is exposed. A barrier metal layer 15 of Cr-Cu-Au or the like is then evaporated. A salient electrode 16 is manufactured by electrolytic plating of gold as the barrier metal layer 15 covering the electrode pad 13 is left. After an unnecessary part of the barrier metal layer is removed, a high-molecular insulating proptective film is coated. A coupling agent and a PIQ 14 are coated and heated. A resist is so provided that the PIQ 14 is exposed at the salient electrode 16. Etching is performed to expose the electrode 16. Unnecessary parts of the resist and the coupling agent are removed. A high-molecular insulating protective film is coated on the region of the barrier metal off its part coupled with the salient electrode. This results in effecting firm bonding and raising the reliability despite the etching of the PIQ.
COPYRIGHT: (C)1980,JPO&Japio
JP13818078A 1978-11-08 1978-11-08 Semiconductor device Pending JPS5563852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13818078A JPS5563852A (en) 1978-11-08 1978-11-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13818078A JPS5563852A (en) 1978-11-08 1978-11-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5563852A true JPS5563852A (en) 1980-05-14

Family

ID=15215914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13818078A Pending JPS5563852A (en) 1978-11-08 1978-11-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563852A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136049A (en) * 1985-12-10 1987-06-19 Fuji Electric Co Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874184A (en) * 1971-12-29 1973-10-05
JPS51122375A (en) * 1975-04-09 1976-10-26 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874184A (en) * 1971-12-29 1973-10-05
JPS51122375A (en) * 1975-04-09 1976-10-26 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136049A (en) * 1985-12-10 1987-06-19 Fuji Electric Co Ltd Manufacture of semiconductor device

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