JPS57126132A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57126132A JPS57126132A JP56010442A JP1044281A JPS57126132A JP S57126132 A JPS57126132 A JP S57126132A JP 56010442 A JP56010442 A JP 56010442A JP 1044281 A JP1044281 A JP 1044281A JP S57126132 A JPS57126132 A JP S57126132A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- barrier metal
- layer
- reliability
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 230000004888 barrier function Effects 0.000 abstract 4
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000005496 eutectics Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000005764 inhibitory process Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE:To ensure eutectic bonding, an to improve yield and reliability by forming a bump electrode through barrier metals through a lift-off method, increasing the closely adhesive force of the interface between the metals through heat treatment and grinding the surface of a bump. CONSTITUTION:An opening 3a is shaped to a passivation film 3 coating an electrode pad 2a on a Si substrate 1 on which an IC, etc. are formed, and the barrier metal layer 5 of Cr and Ag is evaporated onto the whole surface through a spacer resist layer 4. A plating resist layer 6 is shaped, the Au bump 7 is plated, the resist layers 4, 6 are removed, the barrier metal section used as a common electrode is removed, and the whole is thermally treated in order to increase adhesive property. A barrier metal diffusion layer 8a formed onto the surface of the bump through heat treatment is ground and removed. Accord- ingly, the inhibition of bonding through an Au/Sn eutectic by the existence of the diffusion layer 8a can be eliminated, and the yield and reliability of mounting can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56010442A JPS57126132A (en) | 1981-01-27 | 1981-01-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56010442A JPS57126132A (en) | 1981-01-27 | 1981-01-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57126132A true JPS57126132A (en) | 1982-08-05 |
Family
ID=11750262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56010442A Pending JPS57126132A (en) | 1981-01-27 | 1981-01-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57126132A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62210649A (en) * | 1986-03-12 | 1987-09-16 | Toshiba Corp | Semiconductor device and manufacture thereof |
| US20110278720A1 (en) * | 2009-02-04 | 2011-11-17 | Panasonic Corporation | Semiconductor substrate structure and semiconductor device |
| CN102459061A (en) * | 2009-06-02 | 2012-05-16 | 罗伯特·博世有限公司 | Micromechanical component and method for producing a micromechanical component |
-
1981
- 1981-01-27 JP JP56010442A patent/JPS57126132A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62210649A (en) * | 1986-03-12 | 1987-09-16 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPH0328058B2 (en) * | 1986-03-12 | 1991-04-17 | Tokyo Shibaura Electric Co | |
| US20110278720A1 (en) * | 2009-02-04 | 2011-11-17 | Panasonic Corporation | Semiconductor substrate structure and semiconductor device |
| US8378505B2 (en) * | 2009-02-04 | 2013-02-19 | Panasonic Corporation | Semiconductor substrate structure and semiconductor device |
| CN102459061A (en) * | 2009-06-02 | 2012-05-16 | 罗伯特·博世有限公司 | Micromechanical component and method for producing a micromechanical component |
| CN102459061B (en) * | 2009-06-02 | 2015-02-18 | 罗伯特·博世有限公司 | Micromechanical component and method for producing a micromechanical component |
| US9593011B2 (en) | 2009-06-02 | 2017-03-14 | Robert Bosch Gmbh | Micromechanical component and method for producing a micromechanical component |
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