KR940027104A - 트랜지스터 제조방법 - Google Patents

트랜지스터 제조방법 Download PDF

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Publication number
KR940027104A
KR940027104A KR1019930008297A KR930008297A KR940027104A KR 940027104 A KR940027104 A KR 940027104A KR 1019930008297 A KR1019930008297 A KR 1019930008297A KR 930008297 A KR930008297 A KR 930008297A KR 940027104 A KR940027104 A KR 940027104A
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South Korea
Prior art keywords
transistor
conductive
source
photoresist
gate
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KR1019930008297A
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English (en)
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KR960014718B1 (en
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황현상
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문정환
금성일렉트론 주식회사
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Priority to KR93008297A priority Critical patent/KR960014718B1/ko
Priority to US08/134,376 priority patent/US5364807A/en
Priority to JP30970693A priority patent/JP3640406B2/ja
Priority to DE4344285A priority patent/DE4344285B4/de
Publication of KR940027104A publication Critical patent/KR940027104A/ko
Application granted granted Critical
Publication of KR960014718B1 publication Critical patent/KR960014718B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 비대칭형 트랜지스터 제조방법에 관한 것으로, 딥서브미크론 MOSFET의 숏채널 효과와 핫캐리어 신뢰성을 동시에 해결하기 위해 소오스와 드레인에 반대도전형의 불순물 이온을 주입하여 비대층구조의 트랜지스터를 형성한다.
본 발명은 제1도전형의 반도체 기판(11)에 게이트 절연막(12), 게이트전극(13), 저농도의 제2도전형 소오스/드레인 영역(14), 게이트 측벽 스페이서(15) 및 고농도의 제2도전형 소오스/드레인 영역(16)으로 이루어진 통상의 LDD구조의 트랜지스터를 형성하는 공정과, 상기 트랜지스터 전면에 포토레지스트(17)를 도포한후 상기 소오스 영역측의 게이트 측벽 스페이서(15) 부위를 선택적으로 노출시키는 공정, 상기 노출된 소오스 영역측의 게이트 측벽 스페이서를 제거하는 공정, 및 상기 결과물에 제1도전형 불순물을 이온주입하여 제1도전형 불순물영역(18)을 형성하는 공정을 포함하는 것을 특징으로 하는 트랜지스터 제조방법을 제공함으로써 전기적 특성 및 신뢰성이 우수한 MOSFET의 실현을 가능하게 한다.

Description

트랜지스터 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 트랜지스터 제조방법을 도시한 도면.

Claims (3)

  1. 제1도전형의 반도체 기판(11)에 게이트 절연막(12), 게이트전극(13, 저농도의 제2도전형 소오스/드레인 영역(14), 게이트 측벽 스페이서(15) 및 고농도의 제2도전형 소오스/드레인 영역(16)으로 이루어진 통상의 LDD구조의 트랜지스터를 형성하는 공정과, 상기 트랜지스터 전면에 포토레지스트(17)를 도포한후 상기 소오스 영역측의 게이트 측벽 스페이서(15) 부위를 선택적으로 노출시키는 공정, 상기 노출된 소오스 영역측의 게이트 측벽 스페이서를 제거하는 공정, 및 상기 결과물에 제1도전형 불순물을 이온주입하여 제1도전형 불순물영역(18)을 형성하는 공정을 포함하는 것을 특징으로 하는 트랜지스터 제조방법.
  2. 제1항에 있어서, 상기 포토레지스트(17)는 3중(Tri-level) 포토레지스트임을 특징으로 하는 트랜지스터 제조방법.
  3. 제1항에 있어서, 상기 소오스 영역측의 게이트 측벽 스페이서(15) 부위를 선택적으로 노출시키는 공정은 상기 트랜지스터 전면에 포토레지시트(17)를 도포한후, 가장 상층의 포토레지스트를 소오스측 게이트 측벽 스페이서를 노출시키기 위한 패턴으로 패터닝한 다음 상기 게이트 전극(13)을 식각종점으로 이용하여 하층의 포토레지스트를 건식식각하는 공정임을 특징으로 하는 트랜지스터 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR93008297A 1993-05-14 1993-05-14 Method of manufacturing transistor KR960014718B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR93008297A KR960014718B1 (en) 1993-05-14 1993-05-14 Method of manufacturing transistor
US08/134,376 US5364807A (en) 1993-05-14 1993-10-12 Method for fabricating LDD transitor utilizing halo implant
JP30970693A JP3640406B2 (ja) 1993-05-14 1993-11-17 トランジスタの製造方法
DE4344285A DE4344285B4 (de) 1993-05-14 1993-12-23 Verfahren zur Herstellung eines Transistors

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Application Number Priority Date Filing Date Title
KR93008297A KR960014718B1 (en) 1993-05-14 1993-05-14 Method of manufacturing transistor

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KR940027104A true KR940027104A (ko) 1994-12-10
KR960014718B1 KR960014718B1 (en) 1996-10-19

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US (1) US5364807A (ko)
JP (1) JP3640406B2 (ko)
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DE (1) DE4344285B4 (ko)

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Publication number Publication date
DE4344285B4 (de) 2004-04-15
KR960014718B1 (en) 1996-10-19
JPH06333942A (ja) 1994-12-02
DE4344285A1 (de) 1994-11-17
US5364807A (en) 1994-11-15
JP3640406B2 (ja) 2005-04-20

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