KR980006482A - 반도체소자 및 그 제조방법 - Google Patents

반도체소자 및 그 제조방법 Download PDF

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Publication number
KR980006482A
KR980006482A KR1019960025750A KR19960025750A KR980006482A KR 980006482 A KR980006482 A KR 980006482A KR 1019960025750 A KR1019960025750 A KR 1019960025750A KR 19960025750 A KR19960025750 A KR 19960025750A KR 980006482 A KR980006482 A KR 980006482A
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South Korea
Prior art keywords
insulating film
pattern
gate electrode
forming
semiconductor device
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KR1019960025750A
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English (en)
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KR100235957B1 (ko
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전용주
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김주용
현대전자산업주식회사
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Priority to KR1019960025750A priority Critical patent/KR100235957B1/ko
Publication of KR980006482A publication Critical patent/KR980006482A/ko
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Publication of KR100235957B1 publication Critical patent/KR100235957B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 반도체소자의 제조 방법에 관한 것으로서, MOS FET에서 게이트전극 하부의 반도체기판에 형성되는 채널의 Vt 조절용 불순물 농도를 채널의 양측 부분을 다른 채널 영역에 비해 높게 형성하여 짧은 채널을 갖는 MOS FET에서의 짧은 채널 효과를 방지하였으므로, 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있다.

Description

반도체소자 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a도 내지 제2g도는 본 발명에 따른 반도체소자의 제조공정도.

Claims (3)

  1. 반도체기판상에 형성되어 있는 게이트 절연막과, 상기 게이트 절연막상에 형성되어 있는 게이트 전극과, 상기 게이트전극 양측의 반도체기판에 형성되어 있는 소오스/드레인 영역을 구비하는 반도체소자에 있어서, 상기 게이트전극 하부의 소오스/드레인 영역 사이의 채널 영역중 상기 소오스/드레인 영역 측의 채널 영역이 태널 영역의 다른 부분 보다 Vt 조절용 불순물의 농도가 높게 형성되어 있는 것을 특징으로하는 반도체소자.
  2. 반도체기판상에 게이트 절연막을 형성하는 공정과, 상기 구조의 전표면에 도전층을 형성하는 공정과, 상기 도전층상에 절연막을 형성하는 공정과, 상기 절연막상에 게이트전극 패턴닝용 감광막 패턴을 형성하는 공정과, 상기 감광막 패턴에 의해 노출되어 있는 절연막을 제거하여 절연막 패턴을 형성하는 공정과, 상기 절연막 패턴의 양측을 습식 식각하여 상기 감광막 패턴의 하부로 언터컬이 지도록 하는 공정과, 상기 감광막 패턴을 마스크로 도전층을 식각하여 도전층 패턴으로된 게이트전극을 형성하되, 그 폭이 절연막 패턴 보다 크게 형성되도록 하는 공정과, 상기 감광막 패턴을 제거하는 공정과, 상기 반도체기판에 상기 반도체기판과 동일한 도전형의 불순물을 이온주입하여 상기 게이트전극 양단 하부의 반도체기판에 Vt 조절용 불순물 농도가 채널의 중앙 부분 보다 높게 하는 공정과, 상기 절연막 패턴을 제거하는 공정을 구비하는 반도체소자의 제조방법.
  3. 제2항에 있어서, 상기 절연막을 산화막 또는 질화막으로 형성하는 것을 특징으로하는 반도체소자의 제조방법.
KR1019960025750A 1996-06-29 1996-06-29 반도체소자 및 그 제조방법 KR100235957B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960025750A KR100235957B1 (ko) 1996-06-29 1996-06-29 반도체소자 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960025750A KR100235957B1 (ko) 1996-06-29 1996-06-29 반도체소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR980006482A true KR980006482A (ko) 1998-03-30
KR100235957B1 KR100235957B1 (ko) 1999-12-15

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