KR970003685A - 모스 전계 효과 트랜지스터의 제조 방법 - Google Patents
모스 전계 효과 트랜지스터의 제조 방법 Download PDFInfo
- Publication number
- KR970003685A KR970003685A KR1019950016022A KR19950016022A KR970003685A KR 970003685 A KR970003685 A KR 970003685A KR 1019950016022 A KR1019950016022 A KR 1019950016022A KR 19950016022 A KR19950016022 A KR 19950016022A KR 970003685 A KR970003685 A KR 970003685A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- manufacturing
- field effect
- effect transistor
- mos field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 title claims abstract 4
- 238000000034 method Methods 0.000 claims abstract 2
- 238000005530 etching Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000002955 isolation Methods 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 모스 전계 효과 트랜지스터의 제조 방법에 관한 것으로, 트랜지스터의 채널영역에 다수의 홈을 그 홈의 표면을 따라 게이트 전극을 형성하여 트랜지스터의 유효 게이트 넓이를 증가시킴으로써, 트랜지스터의 특성열화 없이도 구동전류의 사용량을 크게 개선한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2A도 및 제2B도는 본 발명의 실시예에 따른 모스 전계 효과 트랜지스터의 평면도 및 단면도.
Claims (2)
- 반도체 기판의 소자분리영역에 트렌치형 소자분리막을 형성하는 단계와, 전체 구조의 상부에 감광막 패턴을 형성하고, 노출된 반도체 기판을 식각하여 다수의홈을 형성하는 단계와, 상기 감광막 패턴을 제거하고, 게이트 절연막을 형성하고, 그 상부에 폴리시리콘층을 형성하는 단계와, 게이트 마스크를 이용한 식각 공정으로 폴리실리콘과 게이트절연막을 식각하여 게이트를 형성하는 단계와, 인 또는 비소를 이온 주입하여 상기 게이트 양측의 반도체 기판에 고농도영역의 소오스와 드레인을 형성하는 단계를 포함하는 것을 특징으로 하는 모스 전계 효과 트랜지스터의 제조 방법.
- 제1항에 있어서, 게이트 길이 양측에 홈이 구비되도록 홈의 길이가 큰 것을 특징으로 하는 모스 전계 효과트랜지스터의 제조 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950016022A KR0161737B1 (ko) | 1995-06-16 | 1995-06-16 | 모스 전계 효과 트랜지스터의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950016022A KR0161737B1 (ko) | 1995-06-16 | 1995-06-16 | 모스 전계 효과 트랜지스터의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970003685A true KR970003685A (ko) | 1997-01-28 |
| KR0161737B1 KR0161737B1 (ko) | 1999-02-01 |
Family
ID=19417315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950016022A KR0161737B1 (ko) | 1995-06-16 | 1995-06-16 | 모스 전계 효과 트랜지스터의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0161737B1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100669353B1 (ko) | 2005-10-14 | 2007-01-16 | 삼성전자주식회사 | 비휘발성 기억소자 및 그 형성방법 |
| KR102673880B1 (ko) | 2022-05-25 | 2024-06-07 | 한양대학교 에리카산학협력단 | 다층 스트레인 센서 제조방법 및 이로부터 제조된 스트레인 센서 |
-
1995
- 1995-06-16 KR KR1019950016022A patent/KR0161737B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0161737B1 (ko) | 1999-02-01 |
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