KR920010132B1 - 재 성장법을 이용한 구조가 다른 에피층의 제조방법 - Google Patents

재 성장법을 이용한 구조가 다른 에피층의 제조방법 Download PDF

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KR920010132B1
KR920010132B1 KR1019890012336A KR890012336A KR920010132B1 KR 920010132 B1 KR920010132 B1 KR 920010132B1 KR 1019890012336 A KR1019890012336 A KR 1019890012336A KR 890012336 A KR890012336 A KR 890012336A KR 920010132 B1 KR920010132 B1 KR 920010132B1
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이재진
맹성재
김진섭
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재단법인 한국전자통신연구소
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Abstract

내용 없음.

Description

재 성장법을 이용한 구조가 다른 에피층의 제조방법
제1도는 종래의 제조방법에 의해 화합물 반도체의 기판에 에피택셜층을 성장하는 상태를 나타낸 개략도.
제2도는 본 발명의 실시예에 의해 에피층을 제조하는 공정을 나타낸 것으로,
(a)도는 화합물 반도체의 기판에 제1에피층을 성장하는 상태를 나타낸 단면도.
(b)도는 제1에피층을 상면에 유전체를 증착하는 상태를 나타낸 단면도.
(c)도는 식각에 의해 메사를 형성하는 상태를 나타낸 단면도.
(d)도는 재성장에 의해 제2에피층을 형성하는 상태를 나타낸 단면도.
(e)도는 라프트오프방법으로 유전체를 제거하는 상태를 나타낸 단면도.
* 도면의 주요부분에 대한 부호의 설명
11 : 반도체 기판 12 : 제1에피층
13 : 유전체층 14 : 제2에피층
본 발명은 화합물 반도체 제조방법에 관한 것으로, 특히 하나의 칩에 여러가지 기능을 갖는 소자를 제조할 수 있도록 한 재성장법을 이용한 구조가 다른 에피층의 제조방법에 관한 것이다.
일반적으로 반도체 기술이 점차 고집적화와 소형화의 추세로 나아가는 동시에 여러가지 기능을 갖는 소자들을 집적시키는 다기능 집적화로 발전하고 있음은 이미 널리 알려진 사실이다.
이와 같은 추세는 정보화시대가 도래하면서 더욱 촉진되어 전자소자와 광소자가 서로 결합되어 여러가지의 기능을 발휘 할수 있도록 한 광전집적회로를 요구하게 되었다.
그러나 상기와 같이 여러가지 기능을 갖는 소자를 한 칩에 제조하는 기술은 같은 기판에 여러가지 구조를 지닌 활성층을 필요로 하기 때문에 현재의 기술로는 많은 반복적인 작업과 에피층을 성장하는 기술의 한계로 인해 실제로 구현하는데 어려움이 많았다.
종래에는 다기능을 갖는 소자 또는 집적회로를 만들기 위하여 제1도에 도시한 바와 같이 한 기능만을 위한활성층(2)인 에피택셜층(2)을 각각 성장하여 반도체기판(1)상에서 서로 연결하거나 여러가지의 복잡한 과정을 거쳐 하나의 다기능 칩을 형성시키도록 하였었다.
그러나 상기와 같은 종래의 제조방법에 의하여서는, 각 소자사이를 연결할 때 배선의 길이가 증가하는 데에 따라 저항이 증가되면서 잡음이 개입되는 문제점이 발생함은 물론, 배선의 연결기술에 대한 보완이 시급한 과제로 남아 있습니다.
이에 따라 본 발명은 같은 기판에 여러가지 구조를 간단한 방법으로 성장시켜 여러가지 기능을 가진 소자를 하나의 칩으로 만들도록한 재성장법을 이용한 구조가 다른 에피층의 제조방법을 제공하는 것을 그 목적으로 한다.
이를 위하여 본 발명은 화합물 반도체를 제조함에 있어서, 반도체기판에 표면 청정처리를 하고, 제1에피층을 성장한 다음 이산화 실리콘이나 질화실리콘의 유전체를 입히고, 화학적 방법에 의해 요구되는 면적만을 남기면서 식각한 후, 그 위에 다른 구조의 제2에피층을 재성장한 다은 유전체 및 유전체위에 재성장된 제2에피층을 제거하도록 함으로써, 구조가 다른 에피층을 하나의 반도체 기판상에 성장하는 것이다.
본 발명은 첨부도면에 의거 상세히 기술하여 보면 다음과 같다.
제2도는 본 발명의 일 실시예에 따라 제조하는 공정을 순서대로 나타낸 것이다.
(a)도는 제1에피층을 성장하는 상태를 나타낸 것으로, 에피택시 장치를 이용하여 반도체기판(11)상에 원하는 에피층을 에피택시 방법으로 성장하여 제1에피층(12)을 형성하는 것이다.
(b)도는 제1에피층의 상면에 유전체를 형성하는 상태를 나타낸 것으로, 제1에피층(12)의 상면에 이산화규소, 질화규소등의 유전체를 진공열증착, 광화학증착 또는 플라즈마 화학증착의 방법으로 100∼1,000nm 정도의 두께로 증착하여 유전체층(13)이 형성되게 한다.
(c)도는 메사영역을 형성하는 단계를 나타낸 것으로, 반도체기판(11)위에 형성한 제1에피층(12)과 유전체층(13)중 일부에 광묘화법을 이용하여 메사영역을 만든다음, 메사영역내의 제1에피층(12a)과 유전체층(13a)을 제외한 부분 즉, 재성장할 부분을 황산/과산화수소/물(6 : 1 : 1의 부피비) 또는 암모니아/과산화수소/물등의 식각용액을 이용하여 식각한 후, 탈이온수로 표면을 세척한다.
(d)도는 제2에피층을 성장하는 상태를 나타낸 것으로, 세척된 전체표면위에 에피택시장치를 이용하여 제2에피층을 재성장하여 제1에피층(12a)과 동일한 높이로 제2에피층(14)이 형성되도록 하는 한편, 유전체층(13a)의 상면에도 제2에피층(14a)이 형성이 된다.
(e)도는 리프트오프방법으로 유전체층을 제거하는 상태를 나타낸 것으로, 유전체층(13a)의 상면에 형성된 에피층(14a)은 유전체 자체가 결정방향을 가지고 있지 못하는 까닭에 비정질층 또는 다결정층으로 형성되어 원하지 않은 부분이므로, 이에 따라 재성장공정을 거친 기판전체를 유전체 식각용 약품인 BOE와 같은 식각용액에 넣어 리프트오프(Lift-off)하면 유전체층(13a)이 제거되면서 이의 상면에 증착된 제2에피층(14a)도 제거되므로 반도체기판(11)상에 구조가 서로다른 두개의 제1에피층(12a)과 제2에피층(14)이 존재한다.
따라서, 본 발명은 제1에피층(12)의 상면에 유전체층(13)을 증착하고, 메사영역(12a), (13a)만 남기면서 제거하고, 구조가 다른 제2에피층(14)을 증착함으로써, 서로다른 구조의 소자, 회로등을 같은 기판상에 제작할 수 있으며, 더욱 화합물 반도체가 점차 광집적회로쪽으로 목표를 두고 기술반전이 이루어지는 경향에 맞추어 광전집적회로용 기판으로 이용되면서 광전집적화를 가속시킬 수 있다.
또한, 에피층을 이용한 소자인 고전자 이동도 트랜지스터, 금속반도체 전계효과 트랜지스터, 광검출기, 레이저다이오드 및 발광다이오드등의 전자소자 및 광소자들을 서로 원하는 소자끼리 조합하여 하나의 기판 위에 간단하게 제작할 수 있는 것이다.

Claims (3)

  1. 화합물 반도체 제조방법에 있어서, 반도체기판(11)위에 성장된 제1에피층(12)의 상면에 유전체층(13)을 증착하고 원하는 부분을 식각한 다음 제2에피층(14)을 재성장하고 유전체층과 이의 상면에 성장된 제2에피층(14a)을 제거하여 하나의 기판상에서 서로다른 구조의 에피층을 이용하여 잔자소자 및 광소자등을 제작하도록 한 재성장법을 이용한 구조가 다른 에피층의 제조방법.
  2. 제1항에 있어서, 제1에피층(12)의 상면에 이산화규소, 질화규소등의 유전체층(13)을 형성하고 메사 영역의 제1에피층(12a)과 유전체층(13a)만 남기면서 식각한 후, 제2에피층(14)을 재성장하도록 한 재성장법을 이용한 구조가 다른 에피층의 제조방법.
  3. 제1항에 있어서, 제2에피층(14)을 재성장한 후 유전체층(13a)과 이의 상면에 성장된 제2에피층(14a)을 식각용액으로 제거하여 하나의 기판위에 구조가 다른 제1 및 제2에피층(12a), (14)이 형성되도록 한 재성장법을 이용한 구조가 다른 에피층의 제조방법.
KR1019890012336A 1987-04-10 1989-08-29 재 성장법을 이용한 구조가 다른 에피층의 제조방법 KR920010132B1 (ko)

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PCT/EP1988/000275 WO1988008137A1 (en) 1987-04-10 1988-04-02 Determination of ions in fluids
KR1019890012336A KR920010132B1 (ko) 1987-04-10 1989-08-29 재 성장법을 이용한 구조가 다른 에피층의 제조방법

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NO885350L (no) 1988-11-30
FI942873A (fi) 1994-06-16
EP0471391B1 (en) 1997-02-05
JPH01503596A (ja) 1989-12-07
HRP940731A2 (en) 1996-12-31
LV11068B (en) 1996-04-20
KR910005411A (ko) 1991-03-30
JPH05130894A (ja) 1993-05-28
RU2054674C1 (ru) 1996-02-20
EP0494704A2 (en) 1992-07-15
DE3855790T2 (de) 1997-06-12
DK687488A (da) 1988-12-09
HUT51677A (en) 1990-05-28
JPH05276994A (ja) 1993-10-26
IE940435L (en) 1988-10-10
JPH0642839B2 (ja) 1994-06-08
IE940436L (en) 1988-10-10
EP0286039A3 (en) 1988-12-28
NO932855D0 (no) 1993-08-11
FI942872A0 (fi) 1994-06-16
JPH05130895A (ja) 1993-05-28
ES2098300T3 (es) 1997-05-01
NO176072B (no) 1994-10-17
CN1051111C (zh) 2000-04-05
NO932856D0 (no) 1993-08-11
EP0309525A1 (en) 1989-04-05
EP0494705A2 (en) 1992-07-15
EP0470652A2 (en) 1992-02-12
NZ224171A (en) 1994-10-26
KR920009425B1 (ko) 1992-10-16
KR920010312B1 (ko) 1992-11-26
DE3881931D1 (de) 1993-07-29
CN1030094A (zh) 1989-01-04
IE62537B1 (en) 1995-02-08
EP0476715A3 (en) 1992-07-22
EP0508388A1 (en) 1992-10-14
ATE91025T1 (de) 1993-07-15
HU9201060D0 (en) 1992-06-29
FI885727A0 (fi) 1988-12-09
DE3890267T1 (de) 1989-05-03
EP0476715A2 (en) 1992-03-25
DD269919A5 (de) 1989-07-12
IL101586A (en) 1995-12-08
YU69988A (en) 1990-02-28
ES2097781T3 (es) 1997-04-16
ES2097782T3 (es) 1997-04-16
FI942872A (fi) 1994-06-16
CN1104772A (zh) 1995-07-05
EP0504948A1 (en) 1992-09-23
EP0286039B1 (en) 1993-06-23
CS170792A3 (en) 1992-12-16
IL101585A0 (en) 1992-12-30
FI885727A (fi) 1988-12-09
CN1089808C (zh) 2002-08-28
DE3855714T2 (de) 1997-05-07
HU9201059D0 (en) 1992-06-29
NZ239095A (en) 1994-10-26
JP2610074B2 (ja) 1997-05-14
JPH05276993A (ja) 1993-10-26
DE3881931T2 (de) 1993-12-16
EP0494705A3 (en) 1992-09-02
JP3080770B2 (ja) 2000-08-28
DE3855715T2 (de) 1997-05-07
EP0286039A2 (en) 1988-10-12
NO932855L (no) 1988-11-30

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