KR910014459A - 에폭시 수지 조성물 및 반도체 장치 - Google Patents

에폭시 수지 조성물 및 반도체 장치 Download PDF

Info

Publication number
KR910014459A
KR910014459A KR1019910001178A KR910001178A KR910014459A KR 910014459 A KR910014459 A KR 910014459A KR 1019910001178 A KR1019910001178 A KR 1019910001178A KR 910001178 A KR910001178 A KR 910001178A KR 910014459 A KR910014459 A KR 910014459A
Authority
KR
South Korea
Prior art keywords
group
epoxy resin
general formula
integer
resin composition
Prior art date
Application number
KR1019910001178A
Other languages
English (en)
Other versions
KR950009152B1 (ko
Inventor
도시오 시오하라
가즈또시 도시요시
Original Assignee
카나가와 치히로
신에쓰 가가꾸 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 카나가와 치히로, 신에쓰 가가꾸 고오교 가부시끼가이샤 filed Critical 카나가와 치히로
Publication of KR910014459A publication Critical patent/KR910014459A/ko
Application granted granted Critical
Publication of KR950009152B1 publication Critical patent/KR950009152B1/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/02Polycondensates containing more than one epoxy group per molecule
    • C08G59/04Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof
    • C08G59/06Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols
    • C08G59/08Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols from phenol-aldehyde condensates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32Epoxy compounds containing three or more epoxy groups
    • C08G59/3218Carbocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • C08G59/621Phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C08L63/04Epoxynovolacs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/40Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

내용 없음

Description

에폭시 수지 조성물 및 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 흡수 납땜 후의 내크랙성(Ⅱ) 시행에서 사용한 SO패키지에 크랙이 생긴 상태를 도시한 단면도임, 제2도는 접착성 시험에서 사용한 패키지를 도시한 사시도임.

Claims (3)

  1. (A)하기 일반식(1)
    (식 중, R1은 수소 원자 또는 탄소 원자수 1-10의 알킬기이고,이며, m은 0-2의 정수이고, n은 1또는 2이며, 1은 0-3의 정수임)로 표시되는 에폭시 수지, (B) 치환 또는 비치환 노볼락형 페놀수지 및(또는) 하기 일반식(2)
    (식중, R1및 m은 상기와 동일한 의미를 표시함)로 표시되는 트리페놀알칸형 수지를 주성분으로 하는 경화제, (C)무기질 충전제를 함유해서 이루어지는 것을 특징으로 하는 에폭시 수지 조성물.
  2. 제1항에 있어서, (D) 하기 일반식(3)
    (식중, A는 -OH기, -OG기, 및 알케닐기를 함유하는 탄소 원자수 1-10의 유기기에서 선택되는 동일하거나 또는 상이한 종류의 기이고, R1, -OG, m, n 및 1은 상기와 동일한 의미를 표시함)로 표시되는 유기 중합체와 하기 일반식(4)
    (식 중, R 는 수소 원자 또는 -(CH-)P-NH2(p는 0-5의 정수)이고, R3은 1가 유기기이며, a및 b는 0.001〈a〈1.1〈b〈3,1.001〈a+b〈3을 만족시키는 양수임)로 표시되는 오르가노폴리실록산과의 부가 반응에 의해 얻어지는 블럭 공중합체를 배합한 에폭시 수지 조성물.
  3. 제1항 또는 제2항의 에폭시 수지 조성물의 경화물로 봉지한 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910001178A 1990-01-25 1991-01-24 에폭시 수지 조성물 및 반도체 장치 KR950009152B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-15,596 1990-01-25
JP1559690 1990-01-25

Publications (2)

Publication Number Publication Date
KR910014459A true KR910014459A (ko) 1991-08-31
KR950009152B1 KR950009152B1 (ko) 1995-08-16

Family

ID=11893100

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910001178A KR950009152B1 (ko) 1990-01-25 1991-01-24 에폭시 수지 조성물 및 반도체 장치

Country Status (4)

Country Link
US (1) US5190995A (ko)
EP (1) EP0439171B1 (ko)
KR (1) KR950009152B1 (ko)
DE (1) DE69115058T2 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2780559B2 (ja) * 1991-01-25 1998-07-30 信越化学工業株式会社 アリル基又はプロペニル基を持つナフタレン誘導体
JPH04300914A (ja) * 1991-03-29 1992-10-23 Shin Etsu Chem Co Ltd エポキシ樹脂組成物及び半導体装置
JPH04300915A (ja) * 1991-03-29 1992-10-23 Shin Etsu Chem Co Ltd エポキシ樹脂組成物及び半導体装置
JP2526747B2 (ja) * 1991-05-21 1996-08-21 信越化学工業株式会社 エポキシ樹脂組成物及び半導体装置
JP2669247B2 (ja) * 1992-02-13 1997-10-27 信越化学工業株式会社 熱硬化性樹脂組成物
US5908881A (en) * 1996-11-29 1999-06-01 Sumitomo Bakelite Company Limited Heat-conductive paste
JPH10245473A (ja) * 1997-03-03 1998-09-14 Yuka Shell Epoxy Kk エポキシ樹脂組成物
DE19804595A1 (de) * 1998-02-05 1999-08-12 Siemens Ag Thermisch härtbare Ein-Komponenten-Underfill-Masse
KR100562454B1 (ko) * 1998-07-21 2006-03-21 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 봉지용 에폭시 수지 조성물 및 반도체 장치
US6784024B2 (en) * 2000-01-18 2004-08-31 Micron Technology, Inc. Die attach curing method for semiconductor device
AU2003234394A1 (en) 2002-05-23 2003-12-12 3M Innovative Properties Company Nanoparticle filled underfill
US7943706B2 (en) * 2005-03-24 2011-05-17 Shin-Etsu Chemical Co., Ltd. Semiconductor encapsulating epoxy resin composition and semiconductor device
PL2029656T5 (pl) * 2006-06-16 2014-08-29 Huntsman Adv Mat Switzerland Układ powłoki
TWI492339B (zh) * 2009-06-01 2015-07-11 Shinetsu Chemical Co A dam material composition for a bottom layer filler material for a multilayer semiconductor device, and a manufacturing method of a multilayer semiconductor device using the dam material composition

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3290269A (en) * 1963-04-01 1966-12-06 Koppers Co Inc Naphthyldimethylene spaced phenyl glycidyl ethers
US4418383A (en) * 1980-06-30 1983-11-29 International Business Machines Corporation Data flow component for processor and microprocessor systems
US4376147A (en) * 1981-08-31 1983-03-08 Clopay Corporation Plastic film having a matte finish
JPS59230017A (ja) * 1983-05-25 1984-12-24 Agency Of Ind Science & Technol 新規ポリグリシジルエ−テル及びその製法
JPS60260611A (ja) * 1984-06-08 1985-12-23 Mitsubishi Petrochem Co Ltd 高分子量クレゾ−ルノボラツク樹脂の製造方法
JPS61141724A (ja) * 1984-12-12 1986-06-28 Agency Of Ind Science & Technol ポリグリシジルエ−テル組成物
US4720515A (en) * 1985-05-17 1988-01-19 Denki Kagaku Kogyo Kabushiki Kaisha Epoxy resin composition for encapsulating semiconductor
US4902732A (en) * 1985-09-30 1990-02-20 Shin-Etsu Chemical Co., Ltd. Epoxy resin-based curable compositions
EP0218228B1 (en) * 1985-10-07 1993-09-15 Shin-Etsu Chemical Co., Ltd. Epoxy resin composition
JPS63226951A (ja) * 1987-03-16 1988-09-21 Shin Etsu Chem Co Ltd 樹脂封止型半導体装置
US4908424A (en) * 1987-10-09 1990-03-13 Shell Oil Company Bis-anthrols and bis-naphthols and diglycidyl ethers thereof
MY104894A (en) * 1988-12-08 1994-06-30 Sumitomo Bakelite Co Epoxy resin composition for semiconductor sealing.
JPH0617440B2 (ja) * 1989-05-30 1994-03-09 新日鐵化学株式会社 新規エポキシ樹脂及びその製造法
JPH0390075A (ja) * 1989-09-01 1991-04-16 Nippon Steel Chem Co Ltd エポキシ樹脂及びその中間体並びにその製造法

Also Published As

Publication number Publication date
KR950009152B1 (ko) 1995-08-16
EP0439171A2 (en) 1991-07-31
DE69115058T2 (de) 1996-08-08
US5190995A (en) 1993-03-02
DE69115058D1 (de) 1996-01-18
EP0439171B1 (en) 1995-12-06
EP0439171A3 (en) 1992-07-08

Similar Documents

Publication Publication Date Title
KR920021648A (ko) 에폭시 수지 조성물 및 반도체 장치
KR910014459A (ko) 에폭시 수지 조성물 및 반도체 장치
KR880011269A (ko) 에폭시 수지조성물
KR920018142A (ko) 에폭시 수지 조성물 및 반도체 장치
KR860001167A (ko) 무용제 폴리이미드-변태 에폭시 조성물
KR960037767A (ko) 반도체 캡슐화 에폭시 수지 조성물 및 그것으로 캡슐화된 반도체 장치
KR890013755A (ko) 반도체 봉지용 에폭시 수지 조성물
KR900016376A (ko) 폴리아미드 수지 조성물
KR910020116A (ko) 실리콘고무 조성물 및 그의 경화물
KR930002434A (ko) 내열성이 향상된 반도체소자 밀봉용 수지 조성물
KR910015651A (ko) 반도체 요소를 캡슐화하기 위한 에폭시 수지 조성물
KR950032452A (ko) 에폭시 수지 조성물
KR880011912A (ko) 수지 봉지형 반도체 장치
KR910016854A (ko) 반도체 봉지용 에폭시 수지 조성물
KR930010114A (ko) 반도체 봉지용 에폭시 수지 조성물 및 반도체장치
KR970705609A (ko) 에폭시 수지조성물(epoxy resin composition)
KR900018259A (ko) 에폭시 수지 조성물
KR900004849A (ko) 반도체밀봉용 수지조성물
KR920018141A (ko) 에폭시 수지 조성물 및 반도체 장치
KR930007996A (ko) 다가 페놀, 및 에폭시 수지와 그로부터 유도된 에폭시 수지 조성물
KR920012264A (ko) 에폭시 수지 조성물 및 반도체 장치
KR940011518A (ko) 에폭시수지조성물 및 수지봉지형 반도체장치
KR910012060A (ko) 반도체소자 밀봉용 에폭시수지조성물
KR940014607A (ko) 에폭시 수지 조성물과 그 조성물로 밀봉된 수지 밀봉형 반도체 장치
KR930002442A (ko) 도전성 실리콘 고무 조성물 및 도전성 실리콘 고무

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090807

Year of fee payment: 15

LAPS Lapse due to unpaid annual fee