TWI492339B - A dam material composition for a bottom layer filler material for a multilayer semiconductor device, and a manufacturing method of a multilayer semiconductor device using the dam material composition - Google Patents
A dam material composition for a bottom layer filler material for a multilayer semiconductor device, and a manufacturing method of a multilayer semiconductor device using the dam material composition Download PDFInfo
- Publication number
- TWI492339B TWI492339B TW099117211A TW99117211A TWI492339B TW I492339 B TWI492339 B TW I492339B TW 099117211 A TW099117211 A TW 099117211A TW 99117211 A TW99117211 A TW 99117211A TW I492339 B TWI492339 B TW I492339B
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- Taiwan
- Prior art keywords
- material composition
- group
- semiconductor device
- dam
- epoxy resin
- Prior art date
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- 239000000463 material Substances 0.000 title claims description 96
- 239000000203 mixture Substances 0.000 title claims description 87
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000945 filler Substances 0.000 title description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 61
- 239000003822 epoxy resin Substances 0.000 claims description 60
- 239000002245 particle Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 27
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 25
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 25
- 239000011256 inorganic filler Substances 0.000 claims description 15
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 15
- 239000004848 polyfunctional curative Substances 0.000 claims description 11
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 10
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- -1 polysiloxane Polymers 0.000 claims description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 239000011229 interlayer Substances 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 22
- 239000003795 chemical substances by application Substances 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 11
- 150000002430 hydrocarbons Chemical group 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000007822 coupling agent Substances 0.000 description 8
- 125000003342 alkenyl group Chemical group 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 150000004982 aromatic amines Chemical class 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 125000005998 bromoethyl group Chemical group 0.000 description 2
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000006038 hexenyl group Chemical group 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- AAMHBRRZYSORSH-UHFFFAOYSA-N 2-octyloxirane Chemical compound CCCCCCCCC1CO1 AAMHBRRZYSORSH-UHFFFAOYSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- SXPGQGNWEWPWQZ-UHFFFAOYSA-N 4-(triethoxymethyl)dodecan-1-amine Chemical compound NCCCC(C(OCC)(OCC)OCC)CCCCCCCC SXPGQGNWEWPWQZ-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910002014 Aerosil® 130 Inorganic materials 0.000 description 1
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 1
- 229910002018 Aerosil® 300 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XYSNGNNDJGSUMY-UHFFFAOYSA-N C(C1CO1)OCCCC(C(OCC)(OCC)C)CCCCCCCC Chemical compound C(C1CO1)OCCCC(C(OCC)(OCC)C)CCCCCCCC XYSNGNNDJGSUMY-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 102100037117 Mas-related G-protein coupled receptor member E Human genes 0.000 description 1
- 101150041973 Mrgpre gene Proteins 0.000 description 1
- XEEHRQPQNJOFIQ-UHFFFAOYSA-N N(C1=CC=CC=C1)CCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound N(C1=CC=CC=C1)CCCC(C(OC)(OC)OC)CCCCCCCC XEEHRQPQNJOFIQ-UHFFFAOYSA-N 0.000 description 1
- OBLLLECULNVMRA-UHFFFAOYSA-N NCCC(C(OC)(OC)OC)(CCCCCCCC)CCCN Chemical compound NCCC(C(OC)(OC)OC)(CCCCCCCC)CCCN OBLLLECULNVMRA-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000002009 alkene group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- WWNGFHNQODFIEX-UHFFFAOYSA-N buta-1,3-diene;methyl 2-methylprop-2-enoate;styrene Chemical compound C=CC=C.COC(=O)C(C)=C.C=CC1=CC=CC=C1 WWNGFHNQODFIEX-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000020335 dealkylation Effects 0.000 description 1
- 238000006900 dealkylation reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 229940044949 eucalyptus oil Drugs 0.000 description 1
- 239000010642 eucalyptus oil Substances 0.000 description 1
- 125000005816 fluoropropyl group Chemical group [H]C([H])(F)C([H])([H])C([H])([H])* 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000004344 phenylpropyl group Chemical group 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920006295 polythiol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 235000011962 puddings Nutrition 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004291 sulphur dioxide Substances 0.000 description 1
- 235000010269 sulphur dioxide Nutrition 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
- C08G59/245—Di-epoxy compounds carbocyclic aromatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
- C08G59/4064—Curing agents not provided for by the groups C08G59/42 - C08G59/66 sulfur containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/5033—Amines aromatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Description
本發明係關於一種將藉由FC(Flip Chip:覆晶)封裝、TSV(Through Silicon Via:矽穿孔電極)連接等所製造出之具有多層結構的半導體晶片進行密封時,用以藉由毛細現象將底層填充材料(Underfill)完全浸入至元件間等的間隙之壩材組成物,以及使用該壩材組成物之多層半導體裝置的製造方法,詳細而言,係關於藉由將特定的2種無機填充劑含有於前述壩材組成物,能夠以高厚寬比將前述壩材組成物成型塗佈於電路基板上,將層合為3層以上之半導體晶片進行密封時,使底層填充材料不會從基板中滲出且能夠完全浸入至元件間等的間隙,對底層填充材料之密著性亦高,並可形成強韌的硬化物之壩材組成物,以及使用該壩材組成物之多層半導體裝置的製造方法。
近年來隨著以電氣機器的小型化、輕量化、高功能化,乃逐漸要求電子零件封裝於印刷配線基板上之封裝密度的提升,半導體的封裝方法,其主流方式亦從接腳插入型式轉變為表面封裝。
當中,覆晶封裝為介於複數個凸塊將半導體晶片成組接合(Gang bonding)於電路基板的配線圖型面之方式,藉由將底層填充材料填充於上述有機基板與半導體晶片之間隙以及焊錫凸塊間之間隙並使硬化而完成。關於應用此般封裝方式者,係提出有一種在形成有多層配線之電路基板(中介基板)上,使半導體晶片朝下並進行覆晶封裝者(專利文獻1:日本特開2007-42904號公報)。
再者,關於取代以往導線接合之連接技術,亦出現許多採用TSV構造之多層半導體裝置,無鉛凸塊的構件亦逐漸轉換為銅凸塊。
此般多層半導體裝置中所用之底層填充材料,係使用分注器,利用毛細現象注入於電路基板與半導體晶片之間隙等,但隨著半導體晶片層的多層化,會使焊縫邊變大,尤其分注器側的焊縫邊變大,而從電路基板中滲出,或是當層合的半導體晶片為導線接合型式時,會產生底層填充材料浸入至電極墊之問題。
因此,為了避免此問題,係在基板上設置用以防止該底層填充材料的擴散之壩材,但以往的壩材,不僅缺乏對底層填充材料之黏著力,並且在回焊中或溫度循環中,於壩材與底層填充劑的界面上產生剝離,且更具有封裝產生龜裂而破壞半導體元件周邊之問題。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2007-42904號公報
本發明係鑒於上述情況而創作出者,其目的係提供一種將藉由FC封裝、TSV連接等所製造出之具有多層結構的半導體晶片進行密封時,能夠以高厚寬比成型塗佈於電路基板上,使底層填充材料不會從基板中滲出且能夠完全浸入至元件間等的間隙,對底層填充材料之密著性亦高,並可形成強韌的硬化物之壩材組成物,以及使用該壩材組成物之多層半導體裝置的製造方法。
本發明者們為了達成上述目的而進行精心探討,結果發現,一種以含有:(A)環氧樹脂:100質量份;(B)硬化劑:1~50質量份;(C)平均粒徑為0.1~10μm且最大粒徑為75μm以下之無機填充劑:30~1,000質量份;及(D)平均粒徑為0.005μm以上且未達0.1μm之表面經矽烷化處理之二氧化矽:1~20質量份者為特徵之多層半導體裝置用底層填充材料之壩材組成物,將藉由FC封裝、TSV連接等所製造出之具有多層結構的半導體晶片進行密封時,能夠以高厚寬比成型塗佈於電路基板上,使底層填充材料不會從基板中滲出且能夠完全浸入至元件間等的間隙,對底層填充材料之密著性亦高,並可形成強韌的硬化物之壩材組成物,並且使用該壩材組成物之多層半導體裝置的製造方法乃為有用,因而完成本發明。
亦即,本發明係提供下列多層半導體裝置用底層填充材料之壩材組成物以及使用該壩材組成物之多層半導體裝置的製造方法。
申請專利範圍第1項:
一種多層半導體裝置用底層填充材料之壩材組成物,其特徵為含有下列成分:
(A)環氧樹脂:100質量份;
(B)硬化劑:1~50質量份;
(C)平均粒徑為0.1~10μm且最大粒徑為75μm以下之無機填充劑:30~1,000質量份;及
(D)平均粒徑為0.005μm以上且未達0.1μm之表面經矽烷化處理之二氧化矽:1~20質量份。
申請專利範圍第2項:
如申請專利範圍第1項之壩材組成物,其中成分(C)之無機填充劑為真球狀二氧化矽。
申請專利範圍第3項:
如申請專利範圍第1或2項之壩材組成物,其中成分(A)係含有選自雙酚A型環氧樹脂、雙酚F型環氧樹脂、及下列環氧樹脂之至少1種,
(式中,R為碳數1~20的一價烴基,n為1~4的整數)。
申請專利範圍第4項:
如申請專利範圍第1至3項中任一項之壩材組成物,其中成分(A)係含有經聚矽氧烷改質的環氧樹脂。
申請專利範圍第5項:
如申請專利範圍第1至4項中任一項之壩材組成物,其中成分(B)係含有選自下列式(1)、(2)、(3)及(4)所表示之硬化劑之至少1種,
(式中,R1
~R4
為互相獨立地選自碳數1~6的一價烴基、CH3
S-及C2
H5
S-之基)。
申請專利範圍第6項:
一種多層半導體裝置的製造方法,其特徵為:將多層半導體晶片裝載於電路基板上,並將申請專利範圍第1至6項中任一項所述之壩材組成物成型塗佈於前述電路基板上之多層半導體晶片的周圍,從前述多層半導體晶片與壩材組成物之間,將底層填充材料組成物浸入至前述電路基板與多層半導體晶片之間隙以及多層半導體晶片的層間,並使前述壩材組成物及底層填充材料組成物兩者硬化。
申請專利範圍第7項:
如申請專利範圍第6項之多層半導體裝置的製造方法,其中多層半導體裝置為FC(Flip Chip:覆晶)型半導體裝置或TSV(Through Silicon Via:矽穿孔電極)型半導體裝置。
根據本發明,可提供一種將藉由FC封裝、TSV連接等所製造出之具有多層結構的半導體晶片進行密封時,能夠以高厚寬比成型塗佈於電路基板上,使底層填充材料不會從基板中滲出且能夠完全浸入至元件間等的間隙,對底層填充材料之密著性亦高,並可形成強韌的硬化物之壩材組成物,以及使用該壩材組成物之多層半導體裝置的製造方法。
以下詳細說明本發明。
本發明之液狀環氧樹脂組成物,係含有環氧樹脂、硬化劑及2種無機填充劑作為必要成分。
(A)環氧樹脂
成分(A)之環氧樹脂,可列舉出雙酚A型環氧樹脂、雙酚F型環氧樹脂等之雙酚型環氧樹脂、酚類酚醛型環氧樹脂、甲酚酚醛型環氧樹脂等之酚醛型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、環戊二烯型環氧樹脂等及此等之混合物。
此等當中,較佳為雙酚A型環氧樹脂、雙酚F型環氧樹脂。
較佳亦可使用下列環氧樹脂。
在此,R為碳數1~20,較佳為1~10,更佳為1~3的一價烴基,例如可列舉出甲基、乙基、丙基等之烷基、乙烯基、烯丙基等之烯基等。此外,n為1~4的整數,尤其為1或2。
當使用此般環氧樹脂時,該含量為全環氧樹脂中的25~100質量%,尤佳為50~100質量%,更佳為75~100質量%。未達25質量%時,會有組成物的黏度上升或硬化物的耐熱性降低之疑慮。此般環氧樹脂的例子,可列舉出日本化藥公司製的MRGE等。
再者,本發明中所用之環氧樹脂,較佳係含有經聚矽氧烷改質的環氧樹脂。
此般經聚矽氧烷改質的環氧樹脂,較佳係由下列共聚物所構成之經聚矽氧烷改質的環氧樹脂,該共聚物,係藉由:含烯基的環氧樹脂或是具有含烯基的酚樹脂之環氧樹脂的烯基,與下列平均組成式(5)
Ha
R5 b
SiO(4-a-b)
(5)
(惟式中R5
為經取代或非取代的一價烴基,a為0.01~0.1,b為1.8~2.2,1.81≦a+b≦2.3)
所表示之1分子中的矽原子數為20~400,且直接鍵結於矽原子之氫原子(SiH基)的數目為1~5個,較佳為2~4個,特佳為2個之有機聚矽氧烷的SiH基之加成反應所得之共聚物。
上述一價烴基,較佳為碳數1~10,特佳為碳數1~8,可列舉出甲基、乙基、丙基、異丙基、丁基、異丁基、三級丁基、己基、辛基、癸基等之烷基、乙烯基、烯丙基、丙烯基、丁烯基、己烯基等之烯基、苯基、二甲苯基、甲苯基等之芳基、苯甲基、苯乙基、苯丙基等之芳烷基等,以及此等烴基之氫原子的一部分或全部經氯、氟、溴等之鹵素原子所取代之氯甲基、溴乙基、三氟丙基等之經鹵素取代之一價烴基。
此般經聚矽氧烷改質的環氧樹脂,較佳為下列式(6)所表示之結構者。
上述式中,R6
與上述R5
相同,R7
為-CH2
CH2
CH2
-、-OCH2
-CH(OH)-CH2
-O-CH2
CH2
CH2
-或-O-CH2
CH2
CH2
-,R8
為互相獨立的氫原子或碳數1~4的烷基。n為4~199的整數,較佳為19~109的整數,p為1~10的整數,q為1~10的整數。
當調配此般經聚矽氧烷改質的環氧樹脂時,相對於作為成分(A)全體之環氧樹脂100質量份而言,係以含有二有機聚矽氧烷單位1~20質量份,特佳為2~15質量份之方式來調配,藉此,可降低硬化物的應力,並提升對基板之密著性。
在此,二有機聚矽氧烷的量,係以下列式所表示。
二有機聚矽氧烷的量=(二有機聚矽氧烷部分之分子量/經聚矽氧烷改質的環氧樹脂之分子量)×經聚矽氧烷改質的環氧樹脂之調配量
(B)硬化劑
成分(B)之環氧樹脂的硬化劑,可使用胺系、聚硫醇系、咪唑系、及二氰二醯胺等,較佳係使用胺硬化劑。此外,亦可因應必要而使用酸酐系硬化劑。
胺硬化劑,較佳為下列一般式(1)~(4)所表示之至少1種的芳香族胺化合物。
(式中,R1
~R4
為互相獨立地選自碳數1~6的一價烴基、CH3
S-及C2
H5
S-之基)
上述R1
~R4
的一價烴基,較佳為碳數1~6,特佳為碳數1~3,可列舉出甲基、乙基、丙基、異丙基、丁基、異丁基、三級丁基、己基等之烷基、乙烯基、烯丙基、丙烯基、丁烯基、己烯基等之烯基、苯基等,以及此等烴基之氫原子的一部分或全部經氯、氟、溴等之鹵素原子所取代之氯甲基、溴乙基、三氟丙基等之經鹵素取代之一價烴基。
芳香族胺系硬化劑,一般在常溫下為固體,直接調配時,樹脂黏度會上升,使作業性顯著惡化,所以較佳係在不與環氧樹脂反應之溫度下予以熔融混合。亦即,較佳係以後述的調配量,在70~150℃的溫度範圍內,與環氧樹脂進行1~2小時的熔融混合。當混合溫度未達70℃時,會有芳香族胺系硬化劑無法充分地相溶之疑慮,在超過150℃之溫度時,會有與環氧樹脂反應而使黏度上升之疑慮。此外,當混合時間未達1小時時,會有芳香族胺系硬化劑無法充分地相溶而導致黏度上升之疑慮,超過2小時時,會有與環氧樹脂反應而使黏度上升之疑慮。
硬化劑的調配量,相對於成分(A)之環氧樹脂100質量份而言,聚硫醇系及咪唑系時較佳為1~50質量份,胺系時較佳為10~50質量份。當調配量未達前述下限值時,硬化性會降低,超過前述上限值時,保存性會降低。
(C)平均粒徑為0.1~10μm且最大粒徑為75μm以下之無機填充劑
成分(C)之無機填充劑,可使用一般所知的各種無機填充劑。例如可列舉出熔融二氧化矽、結晶二氧化矽、氧化鋁、氮化硼、氮化鋁、氮化矽、二氧化鎂、二氧化鎂矽酸鹽、鋁等。
此等當中,由於組成物的黏度較低,故較佳為真球狀的熔融二氧化矽。
此般無機填充劑,為了增強與樹脂之鍵結強度,較佳係調配預先經矽烷偶合劑、鈦酸鹽偶合劑等之偶合劑進行表面處理者。
偶合劑,可使用γ-環氧丙氧基丙基三甲氧矽烷、γ-環氧丙氧基丙基甲基二乙氧矽烷、β-(3,4-環氧環己基)乙基三甲氧矽烷等之環氧矽烷、N-β(胺乙基)-γ-胺丙基三甲氧矽烷、γ-胺丙基三乙氧矽烷、N-苯基-γ-胺丙基三甲氧矽烷等之胺基矽烷等之矽烷偶合劑。
在此,關於表面處理中所用之偶合劑的調配量及表面處理方法,可使用與後述成分(D)的處理為相同之方法。
此般無機填充劑,其平均粒徑為0.1~10μm且最大粒徑為75μm以下,特佳為平均粒徑為2~10μm且最大粒徑為50μm以下。當平均粒徑未達0.1μm時,組成物的黏度增高,可能無法適當地調配至組成物,當平均粒徑超過10μm或最大粒徑超過75μm時,硬化物中容易產生空洞。
在此,平均粒徑(重量平均值或中位徑d50
)及最大粒徑,可藉由雷射光繞射法等來求取。
無機質填充劑的調配量,相對於成分(A)之環氧樹脂100質量份而言,為30~1,000質量份,較佳為40~400質量份,尤佳為50~300質量份,當調配量未達30質量份時,硬化物的膨脹係數增大,引發龜裂的產生,超過1,000質量份時,組成物的黏度變得過高。
(D)平均粒徑為0.005μm以上且未達0.1μm之表面經矽烷化處理之二氧化矽
成分(D)之經矽烷化處理之二氧化矽,係與上述成分(C)的無機填充劑一同有益於降低組成物硬化後之硬化物的膨脹係數,而提高彈性率者。
如此,成分(C)與(D)係使用粒度分布不同者,並且將成分(D)的表面進行矽烷化處理者,是為了利用氫鍵所形成之凝聚力,而將流動減黏性賦予至環氧樹脂組成物者。
如此經矽烷化處理之二氧化矽的平均粒徑,為0.005μm以上且未達0.1μm,較佳為0.008μm以上且未達0.08μm。當平均粒徑未達0.005μm時,會有組成物的黏度增高,使作業性顯著惡化之疑慮,當超過0.1μm時,可能使組成物接觸於基板上的元件,或是從散熱片的端部滲出。
在此,平均粒徑可藉由動態光散射法/雷射捕集法等來測定出。
此般經矽烷化處理之二氧化矽,例如較佳可使用Aerosil 130、Aerosil 200、Aerosil 300(商品名稱、Nippon Aerosil公司製)等之發煙二氧化矽,Nipsil VN-3-LP(商品名稱、Nihon Silica工業公司製)等之濕式二氧化矽。
一般而言,矽烷化處理中,例如使用CH3
Si(OCH3
)3
、(CH3
)3
SiOCH3
、PhSi(OCH3
)3
、PhSi CH3
(OCH3
)2
、{(CH3
)3
Si}2
NH、CH3
CH2
Si(OCH3
)3
等(前述「Ph」表示苯基)之矽烷化劑。
此外,為了製得此般經矽烷化處理之二氧化矽,可預先藉由上述矽烷化劑將二氧化矽進行處理,此外,亦可藉由在壩材組成物的調製時添加‧調配上述矽烷化劑之總體摻合法來進行處理而得。就抑制的製造方法用量之觀點來看,較佳為前者之方法。
經矽烷化處理之二氧化矽的調配量,相對於成分(A)之環氧樹脂100質量份而言,為1~20質量份,較佳為3~15質量份。當調配量未達1質量份時,難以抑制底層填充材料的滲出,超過20質量份時,黏度變得過高,使環氧樹脂組成物的流動性降低,而有難以獲得實質上為液狀之環氧樹脂組成物之疑慮。
其他成分(添加劑)
壩材組成物中,除了上述成分(A)~(D)之外,以降低硬化物的應力者為目的,在不阻礙本發明之目的的量下,亦可適當地調配聚矽氧烷橡膠、矽油、液狀聚丁二烯橡膠、甲基丙烯酸甲酯-丁二烯-苯乙烯等之可撓性樹脂、硬化促進劑、矽烷偶合劑、碳黑等之顏料、染料、抗氧化劑等。
壩材組成物的調製方法
壩材組成物,可同時或是因應必要分別將上述成分(A)~(D)及期望的上述其他成分一邊進行加熱處理,一邊攪拌、溶解、混合及分散。
此等操作中所用之裝置並無特別限定,可使用具備攪拌、加熱裝置之擂碎機、三軋輥機、球磨機、行星摻合機等。此外,可適當組合此等裝置。
如此製得之壩材組成物,較佳係調整為在25℃下具有1~500Pa‧s,特佳為1~150Pa‧s的黏度。
多層半導體裝置的製造方法
如第2圖所示,將多層半導體晶片6(第2圖中為6層)裝載於電路基板8上,並將壩材組成物4成型塗佈於前述電路基板8上之多層半導體晶片6的周圍,從前述多層半導體晶片6與壩材組成物4之間,藉由分注器9將底層填充材料組成物5浸入至前述基板8與多層半導體晶片6之間隙以及多層半導體晶片6的層間,並使前述壩材組成物4及底層填充材料組成物5兩者硬化。
在此,底層填充材料組成物5,例如使用環氧樹脂與胺硬化劑及含有二氧化矽為其成分之25℃下的黏度為10~50Pa‧s左右之組成物。此外,底層填充材料組成物5的吐出時所用之分注器9,例如可使用Asymtek公司製的分注器等之精密分注器。
壩材組成物4及底層填充材料組成物5的硬化條件,較佳係最初在100~120℃下進行0.5小時以上,接著在150~175℃下進行2小時以上的烤爐硬化。當在100~120℃下的加熱未達0.5小時時,硬化後可能產生空洞。此外,當在150~175℃下的加熱未達0.5小時時,可能無法獲得充分的硬化物特性。
此外,壩材組成物4往多層半導體晶片6的周圍之成型塗佈的位置及形狀,並無特別限定,較佳係在距離多層半導體晶片6的端邊為50μm~5mm,特佳為100μm~2mm之位置上,以10μm~1mm,特佳為50μm~0.8mm的寬度,50μm~2mm,特佳為100μm~1mm的高度進行成型塗佈。
此般壩材組成物的成型塗佈,可使用與上述底層填充材料組成物5的吐出時所用之分注器9為相同之精密分注器,特佳為使用Asymtek公司製的噴射分注器。
[實施例]
以下係根據實施例及比較例來具體說明本發明,但本發明並不限定於下列實施例。
[實施例1~5,比較例1、2]
根據第1表來調配環氧樹脂、硬化劑、無機填充劑等,並藉由三軋輥機均一地捏合,而製得各種壩材樹脂組成物。使用如此製得之各種壩材組成物來進行各項評估。所得之結果一同記載於第1表。
所用之材料及評估方法如下所示。
[所用之材料]
(A)環氧樹脂
‧環氧樹脂A1:雙酚F型環氧樹脂(RE303S-L,日本化藥公司製)
‧環氧樹脂A2:下列式所表示之3官能環氧樹脂(Epicoat 630H,Japan Epoxy Resin公司製)
‧環氧樹脂A3:下列經聚矽氧烷改質的環氧樹脂
與
之加成反應生成物
(B)硬化劑
‧硬化劑B1:3,3′-二乙基-4,4′-二胺基二苯甲烷(Kayahard AA,日本化藥公司製)
‧硬化劑B2:3,3′,5,5′-四乙基-4,4′-二胺基二苯甲烷(C-300S,日本化藥公司製)
(C)平均粒徑為0.1~10μm且最大粒徑為75μm以下之無機填充劑
‧二氧化矽C:平均粒徑為7μm且最大粒徑為53μm以下之球狀二氧化矽(龍森公司製)
(D)表面經矽烷化處理之二氧化矽
‧二氧化矽D1:經{(CH3
)3
Si}2
NH及CH3
CH2
Si(OCH3
)3
處理之平均粒徑(d50
)0.008μm的經處理二氧化矽
‧二氧化矽D2:經{(CH3
)3
Si}2
NH及CH3
CH2
Si(OCH3
)3
處理之平均粒徑(d50
)0.01μm的經處理二氧化矽
‧二氧化矽D3:經{(CH3
)3
Si}2
NH及CH3
CH2
Si(OCH3
)3
處理之平均粒徑(d50
)0.08μm的經處理二氧化矽
‧二氧化矽D4:經{(CH3
)3
Si}2
NH、CH3
CH2
Si(OCH3
)3
處理之平均粒徑(d50
)0.12μm的經處理二氧化矽
(E)其他成分
‧矽烷偶合劑:γ-環氧丙氧基丙基三甲氧矽烷(KBM403,信越化學工業公司製)
‧反應性稀釋劑:苯基縮水甘油醚(PGE,日本化藥公司製)
[評估方法]
硬化物的厚寬比
將硬化物的高度(h)與直徑(d)之比(h/d)定義為厚寬比,並成為壩材組成物之形狀維持性能的指標。
厚寬比的測定方法,如第1圖所示,將0.1g的壩材組成物1放置在玻璃板2(1mm厚度),5分鐘後,將前述玻璃板2設置在事先被設定在120℃之圖中未顯示的加熱板上。使壩材組成物1硬化後進行冷卻,並測定該硬化物1的高度(h)與直徑(d),求取厚寬比(h/d)。
玻璃板2係使用為了使表面狀態成為一定而事先以丙酮充分地洗淨者。
彎曲彈性率
將壩材組成物在150℃下進行3小時的加熱‧硬化,製作出10mm×100mm×4mm尺寸的試驗片,依據JIS-K-7161來測定彎曲彈性率。
Tg、CTE-1及CTE-2
將壩材組成物在150℃進行3小時的加熱‧硬化,將該硬化物冷卻至常溫,接著裁切出5mm×5mm×15mm尺寸的試驗片,藉由TMA(熱機械分析裝置),測定出以5℃/分的速度進行升溫時之玻璃轉移溫度(Tg)、Tg以下的膨脹係數(CTE-1)及Tg以上的膨脹係數(CTE-2)。玻璃轉移溫度的測定中,係在20~50℃的溫度範圍內求取CTE-1,在200~230℃的溫度範圍內求取CTE-2。
底層填充材料的滲出
製作出下列多層半導體裝置,來評估底層填充材料之滲出的有無。
(i)多層半導體裝置的製作
如第2圖所示,將使用10mm×10mm×0.25mm尺寸的矽晶片以及20μm(直徑)大小的球狀樹脂粒子間隔材所製作出之6層的多層半導體晶片6,裝載於BT基板8上,並以寬約0.3mm、高約0.3mm的尺寸將壩材組成物4成型塗佈於距離多層半導體晶片6的各邊為1mm之周圍,然後從多層半導體晶片6與壩材組成物4之間,藉由分注器9將底層填充材料組成物5浸入至該層間,在165℃下將上述壩材組成物4及底層填充材料組成物5進行2小時的加熱‧硬化,而製作出多層半導體裝置3。
在此,底層填充材料組成物5,係使用含有環氧樹脂與胺硬化劑及二氧化矽作為成分之於25℃的黏度為10Pa‧s之組成物。
(ii)滲出有無之評估
在上述(i)之多層半導體裝置的製作過程中,評估底層填充材料之滲出的有無。
黏著力
以下列方式製作出評估用樣本,並測定熱衝擊試驗前後之底層填充材料與壩材的黏著力。
(i)評估用樣本的製作
以成為厚度約0.5mm之方式將壩材塗佈於BT基板上,於其上方,一邊在上部中央設置鉤,一邊將底層填充材料成型為下圓直徑5mm、上圓直徑2mm、高度6.2mm尺寸之布丁型,在165℃下將此進行2小時的加熱‧硬化,而製作出評估用樣本。
(ii)黏著力的評估
使用上述(i)的評估用樣本,分別對於初期,以及依據JIS C0025之在-55~125℃中進行1000循環的熱衝擊試驗後之樣本測定黏著力。
黏著力的測定,係將評估用樣本的BT基板固定在桌上,將拉推器的鉤鉤在布丁型成型體的上部上所設置之鉤,並測定該剪應力強度。
實施例1~5,其壩材組成物的形狀維持特性(硬化物的厚寬比)高,多層半導體裝置的製作中,使底層填充材料不會從基板中滲出且能夠順利地浸入至元件間等的間隙。此外,評估用樣本之熱衝擊試驗前後的黏著力亦為堅固。
另一方面,比較例2,由於壩材組成物具有高黏度,所以無法成型塗佈。此外,比較例1,雖然評估用樣本之熱衝擊試驗前後的黏著力堅固,但由於壩材組成物的形狀維持特性(硬化物的厚寬比)低,所以在多層半導體裝置的製作中,會產生底層填充材料從基板中滲出之缺失。
1、4‧‧‧壩材組成物(或其硬化物)
2‧‧‧玻璃板
3‧‧‧多層半導體裝置
5‧‧‧底層填充材料組成物
6‧‧‧多層半導體晶片
7‧‧‧凸塊
8‧‧‧電路基板(BT(Bismaleimide Triazine:雙馬來醯亞胺-三氮雜苯)基板)
第1圖係用以說明壩材組成物的形狀維持性能之概略剖面圖。
第2圖係用以說明多層半導體裝置之製作的一例之概略剖面圖。
3...多層半導體裝置
4...壩材組成物(或其硬化物)
5...底層填充材料組成物
6...多層半導體晶片
7...凸塊
8...電路基板(BT(Bismaleimide Triazine:雙馬來醯亞胺-三氮雜苯)基板)
9...分注器
Claims (7)
- 一種多層半導體裝置用底層填充(Underfill)材料之壩材組成物,其特徵為含有下列成分:(A)環氧樹脂:100質量份;(B)硬化劑:1~50質量份;(C)平均粒徑為0.1~10μm且最大粒徑為75μm以下之無機填充劑:30~1,000質量份;及(D)平均粒徑為0.005μm以上且未達0.1μm之表面經矽烷化處理之二氧化矽:1~20質量份。
- 如申請專利範圍第1項之壩材組成物,其中成分(C)之無機填充劑為真球狀二氧化矽。
- 如申請專利範圍第1或2項之壩材組成物,其中成分(A)係含有選自雙酚A型環氧樹脂、雙酚F型環氧樹脂、及下列環氧樹脂之至少1種,
- 如申請專利範圍第1或2項之壩材組成物,其中成分(A)係含有經聚矽氧烷改質的環氧樹脂。
- 如申請專利範圍第1或2項之壩材組成物,其中成分(B)係含有選自下列式(1)、(2)、(3)及(4)所表示之硬化劑之至少1種,
- 一種多層半導體裝置的製造方法,其特徵為:將多層半導體晶片裝載於電路基板上,並將如申請專利範圍第1至6項中任一項所述之壩材組成物成型塗佈於前述電路基板上之多層半導體晶片的周圍,從前述多層半導體晶片與壩材組成物之間,將底層填充材料組成物浸入 至前述電路基板與多層半導體晶片之間隙以及多層半導體晶片的層間,並使前述壩材組成物及底層填充材料組成物兩者硬化。
- 如申請專利範圍第6項之多層半導體裝置的製造方法,其中多層半導體裝置為FC(Flip Chip:覆晶)型半導體裝置或TSV(Through Silicon Via:矽穿孔電極)型半導體裝置。
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KR20100129694A (ko) | 2010-12-09 |
JP2011014885A (ja) | 2011-01-20 |
US8828806B2 (en) | 2014-09-09 |
CN101899195A (zh) | 2010-12-01 |
US20100304536A1 (en) | 2010-12-02 |
EP2258757B1 (en) | 2012-11-07 |
TW201117331A (en) | 2011-05-16 |
CN101899195B (zh) | 2013-01-02 |
EP2258757A1 (en) | 2010-12-08 |
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