JP6196138B2 - 半導体封止剤および半導体装置 - Google Patents
半導体封止剤および半導体装置 Download PDFInfo
- Publication number
- JP6196138B2 JP6196138B2 JP2013247267A JP2013247267A JP6196138B2 JP 6196138 B2 JP6196138 B2 JP 6196138B2 JP 2013247267 A JP2013247267 A JP 2013247267A JP 2013247267 A JP2013247267 A JP 2013247267A JP 6196138 B2 JP6196138 B2 JP 6196138B2
- Authority
- JP
- Japan
- Prior art keywords
- component
- epoxy resin
- bleed
- semiconductor
- average particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 239000008393 encapsulating agent Substances 0.000 title claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 56
- 229920000647 polyepoxide Polymers 0.000 claims description 56
- 239000003795 chemical substances by application Substances 0.000 claims description 44
- 239000002245 particle Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 238000007789 sealing Methods 0.000 claims description 14
- 239000000945 filler Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000000565 sealant Substances 0.000 claims description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 8
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 239000004594 Masterbatch (MB) Substances 0.000 claims description 5
- 150000001412 amines Chemical group 0.000 claims description 5
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 claims description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 14
- 239000011342 resin composition Substances 0.000 description 10
- 230000000740 bleeding effect Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 6
- 239000012756 surface treatment agent Substances 0.000 description 6
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- -1 glycidyl ester Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- HGXVKAPCSIXGAK-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine;4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N.CCC1=CC(C)=C(N)C(CC)=C1N HGXVKAPCSIXGAK-UHFFFAOYSA-N 0.000 description 1
- MEVBAGCIOOTPLF-UHFFFAOYSA-N 2-[[5-(oxiran-2-ylmethoxy)naphthalen-2-yl]oxymethyl]oxirane Chemical compound C1OC1COC(C=C1C=CC=2)=CC=C1C=2OCC1CO1 MEVBAGCIOOTPLF-UHFFFAOYSA-N 0.000 description 1
- PRKPGWQEKNEVEU-UHFFFAOYSA-N 4-methyl-n-(3-triethoxysilylpropyl)pentan-2-imine Chemical compound CCO[Si](OCC)(OCC)CCCN=C(C)CC(C)C PRKPGWQEKNEVEU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 1
- 229940091173 hydantoin Drugs 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000005040 ion trap Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
- C08G59/245—Di-epoxy compounds carbocyclic aromatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/20—Compounding polymers with additives, e.g. colouring
- C08J3/22—Compounding polymers with additives, e.g. colouring using masterbatch techniques
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/005—Additives being defined by their particle size in general
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/014—Additives containing two or more different additives of the same subgroup in C08K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83102—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Wire Bonding (AREA)
Description
図1は、半導体素子の実装において発生したブリードを説明する図である。ここでは、基板1の上に半導体素子2をアンダーフィル剤により接合した例を示している。図1(A)はチップ上面から見た図を、図1(B)は図1(A)のA−A断面を、それぞれ示している。半導体素子2の周辺にはアンダーフィル剤が盛られている部分(以下「フィレット」という)があるが、その外側に発生しているのがブリードである。ブリードは外観上、変色して見えるだけでなく、装置の特性や信頼性に影響を与える場合がある。
本発明のエポキシ樹脂組成物は、(A)エポキシ樹脂と、(B)硬化剤と、(C)平均粒径10〜100nmのシリカフィラーと、(D)平均粒径0.3μm〜5μmのシリカフィラーとを含む。
3−1.エポキシ樹脂組成物の調整
表1〜4は、実施例1〜25および比較例1〜6のエポキシ樹脂組成物の組成、および後述する評価の結果を示す。表1〜4において、エポキシ樹脂組成物の組成は質量部で表されている。
実施例1〜25および比較例1〜6に対して、以下の評価を行った。
試料としてソルダーレジスト(PSR4000 AUS703)付きの有機基板(FR−4基板)を用いた。まず試料を150℃で1時間、乾燥させた。次にこの試料をプラズマ処理した。プラズマ処理の条件は以下のとおりである。
ガス種:Ar
ガス流量:21sccm
供給電力:400W
処理時間:300sec
ブルックフィールド回転粘度計を用いて、50rpmで、25℃における粘度を測定した。
5rpmおよび50rpmで粘度を測定し、5rpmにおける粘度を50rpmにおける粘度で除した値をTI値とした。
110℃において、20μmのギャップ(間隙)にエポキシ樹脂組成物を注入し、注入されたエポキシ樹脂組成物が入口から20mmの位置に到達するまでの時間を測定した。到達までの時間が短いほど注入性が良いことを示している。なお、注入性の欄に「×」と記載されているのは、エポキシ樹脂組成物が20mmの位置まで到達しなかったこと(すなわち不良であること)を意味する。
FR−4上に封止剤(評価用試料)を約0.5mgポッティングし、この上に2mm□シリコンチップを載せ、室温で5min、放置した後、送風乾燥機を用いて150℃で120min、硬化させた。このようにして得られた試験片について、接着強度を卓上型強度測定機(アイコーエンジニアリング(株)製1605HTP)を用いて測定した。なお、n=10で測定し、平均値を検査値とした。
Claims (7)
- 前記(A)成分と前記(B)成分との当量比が、0.5〜1.8である
ことを特徴とする請求項1に記載の半導体封止剤。 - 前記(B)成分が、アミン硬化剤である
ことを特徴とする請求項1または2に記載の半導体封止剤。 - 前記(A)成分が、ビスフェノールF型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ナフタレン型エポキシ樹脂、アミノフェノール型エポキシ樹脂のうち少なくとも1つを含む
ことを特徴とする請求項1ないし3のいずれか一項に記載の半導体封止剤。 - 硬化物のブリード試験において、発生するブリードが300μm以上1900μm未満である
ことを特徴とする請求項1ないし4のいずれか一項に記載の半導体封止剤。
- 前記(A)成分の少なくとも一部に前記(C)成分を混合してマスターバッチを生成し、当該マスターバッチに他の成分を混合して製造される
ことを特徴とする請求項1ないし5のいずれか一項に記載の半導体封止剤。 - 請求項1ないし6のいずれか一項に記載の半導体封止剤を用いた半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013247267A JP6196138B2 (ja) | 2013-11-29 | 2013-11-29 | 半導体封止剤および半導体装置 |
TW103141181A TWI666259B (zh) | 2013-11-29 | 2014-11-27 | 環氧樹脂組成物、半導體密封劑及半導體裝置 |
US15/038,939 US9947604B2 (en) | 2013-11-29 | 2014-11-28 | Epoxy resin composition, semiconductor sealing agent, and semiconductor device |
CN201480056670.3A CN105637031B (zh) | 2013-11-29 | 2014-11-28 | 环氧树脂组合物、半导体密封剂和半导体装置 |
PCT/JP2014/005966 WO2015079707A1 (ja) | 2013-11-29 | 2014-11-28 | エポキシ樹脂組成物、半導体封止剤および半導体装置 |
KR1020167010974A KR102197914B1 (ko) | 2013-11-29 | 2014-11-28 | 에폭시 수지 조성물, 반도체 봉지제 및 반도체 장치 |
MYPI2016701411A MY176228A (en) | 2013-11-29 | 2014-11-28 | Epoxy resin composition, semiconductor sealing agent, and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013247267A JP6196138B2 (ja) | 2013-11-29 | 2013-11-29 | 半導体封止剤および半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015105304A JP2015105304A (ja) | 2015-06-08 |
JP6196138B2 true JP6196138B2 (ja) | 2017-09-13 |
Family
ID=53198669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013247267A Active JP6196138B2 (ja) | 2013-11-29 | 2013-11-29 | 半導体封止剤および半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9947604B2 (ja) |
JP (1) | JP6196138B2 (ja) |
KR (1) | KR102197914B1 (ja) |
CN (1) | CN105637031B (ja) |
MY (1) | MY176228A (ja) |
TW (1) | TWI666259B (ja) |
WO (1) | WO2015079707A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016079368A (ja) * | 2014-10-22 | 2016-05-16 | 株式会社Kri | 低熱膨張性樹脂組成物およびその製造方法 |
JP6475597B2 (ja) * | 2015-10-02 | 2019-02-27 | 京セラ株式会社 | コイル含浸用エポキシ樹脂組成物およびモールドコイル |
US11186742B2 (en) | 2016-10-14 | 2021-11-30 | Showa Denko Materials Co., Ltd. | Sealing resin composition, electronic component device, and method of manufacturing electronic component device |
KR102057255B1 (ko) | 2017-03-22 | 2019-12-18 | 주식회사 엘지화학 | 반도체 패키지용 수지 조성물과 이를 이용한 프리프레그 및 금속박 적층판 |
MY177304A (en) * | 2017-03-31 | 2020-09-11 | Hitachi Chemical Co Ltd | Protective material for electronic circuit, sealing material for protective material for electronic circuit, sealing method, and method for manufacturing semiconductor device |
CN110093129A (zh) * | 2018-01-31 | 2019-08-06 | 上海宝银电子材料有限公司 | 一种大功率led用高导热率导电银胶 |
JP6806112B2 (ja) * | 2018-05-25 | 2021-01-06 | 昭和電工マテリアルズ株式会社 | 半導体パッケージおよびその製造方法 |
JP7404620B2 (ja) * | 2018-10-25 | 2023-12-26 | 株式会社レゾナック | 液状樹脂組成物並びに電子部品装置及びその製造方法 |
JP7216878B2 (ja) * | 2018-10-31 | 2023-02-02 | 株式会社レゾナック | アンダーフィル用樹脂組成物並びに電子部品装置及びその製造方法 |
CN111559572B (zh) * | 2020-06-12 | 2023-06-02 | 山东泰宝信息科技集团有限公司 | 点光源识读激光加密全息防伪垫片及其制备方法 |
CN115668484A (zh) | 2020-06-23 | 2023-01-31 | 纳美仕有限公司 | 液状压塑成型材料 |
JP2023015657A (ja) | 2021-07-20 | 2023-02-01 | 株式会社トクヤマ | モデル生成装置、予測装置、モデル生成方法、予測方法、および樹脂組成物製造システム |
EP4407673A1 (en) | 2021-09-22 | 2024-07-31 | Namics Corporation | Liquid compression molding material, electronic component, semiconductor device and method for producing semiconductor device |
KR20240081446A (ko) | 2021-10-13 | 2024-06-07 | 나믹스 가부시끼가이샤 | 액상 봉지제, 전자 부품과 그 제조 방법, 및 반도체 장치 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05174629A (ja) | 1991-12-20 | 1993-07-13 | Toshiba Chem Corp | 絶縁性ペースト |
JP4176619B2 (ja) | 2003-07-18 | 2008-11-05 | 信越化学工業株式会社 | フリップチップ実装用サイドフィル材及び半導体装置 |
JP3925803B2 (ja) | 2003-07-18 | 2007-06-06 | 信越化学工業株式会社 | フリップチップ実装用サイドフィル材及び半導体装置 |
JP4810835B2 (ja) | 2005-02-10 | 2011-11-09 | 住友ベークライト株式会社 | アンダーフィル用液状封止樹脂組成物及びそれを用いた半導体装置 |
TWI492339B (zh) | 2009-06-01 | 2015-07-11 | Shinetsu Chemical Co | A dam material composition for a bottom layer filler material for a multilayer semiconductor device, and a manufacturing method of a multilayer semiconductor device using the dam material composition |
JP2011006618A (ja) * | 2009-06-26 | 2011-01-13 | Namics Corp | 封止用液状樹脂組成物、フリップチップ実装体およびその製造方法 |
US8852734B2 (en) | 2009-10-14 | 2014-10-07 | Sumitomo Bakelite Company, Ltd. | Epoxy resin composition, prepreg, metal-clad laminate, printed wiring board and semiconductor device |
JP5598343B2 (ja) | 2011-01-17 | 2014-10-01 | 信越化学工業株式会社 | 半導体封止用液状エポキシ樹脂組成物及び半導体装置 |
JP2012211269A (ja) * | 2011-03-31 | 2012-11-01 | Sekisui Chem Co Ltd | 予備硬化物、粗化予備硬化物及び積層体 |
-
2013
- 2013-11-29 JP JP2013247267A patent/JP6196138B2/ja active Active
-
2014
- 2014-11-27 TW TW103141181A patent/TWI666259B/zh active
- 2014-11-28 CN CN201480056670.3A patent/CN105637031B/zh active Active
- 2014-11-28 KR KR1020167010974A patent/KR102197914B1/ko active IP Right Grant
- 2014-11-28 US US15/038,939 patent/US9947604B2/en active Active
- 2014-11-28 WO PCT/JP2014/005966 patent/WO2015079707A1/ja active Application Filing
- 2014-11-28 MY MYPI2016701411A patent/MY176228A/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20170005021A1 (en) | 2017-01-05 |
KR20160091886A (ko) | 2016-08-03 |
MY176228A (en) | 2020-07-24 |
CN105637031B (zh) | 2017-08-18 |
US9947604B2 (en) | 2018-04-17 |
JP2015105304A (ja) | 2015-06-08 |
CN105637031A (zh) | 2016-06-01 |
KR102197914B1 (ko) | 2021-01-04 |
TWI666259B (zh) | 2019-07-21 |
WO2015079707A1 (ja) | 2015-06-04 |
TW201527409A (zh) | 2015-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6196138B2 (ja) | 半導体封止剤および半導体装置 | |
US9994729B2 (en) | Liquid sealing material, and electronic component using same | |
JP6475168B2 (ja) | エポキシ樹脂組成物、半導体封止剤および半導体装置 | |
JP5968137B2 (ja) | 液状封止材、それを用いた電子部品 | |
KR102666277B1 (ko) | 수지 조성물, 반도체 봉지재, 일액형 접착제 및 접착 필름 | |
JP5449860B2 (ja) | 表面処理シリカ粒子の製造方法、表面処理シリカ粒子、エポキシ樹脂組成物、及び半導体装置 | |
JP2006206827A (ja) | 液状封止用エポキシ樹脂組成物及び半導体装置 | |
JP2003212963A (ja) | 熱硬化性液状封止樹脂組成物及び半導体装置 | |
JP2013253195A (ja) | エポキシ樹脂組成物 | |
JP6039837B2 (ja) | 液状封止材、それを用いた電子部品 | |
WO2014125912A1 (ja) | 液状樹脂組成物、フリップチップ実装体およびその製造方法 | |
JP6405209B2 (ja) | 銅バンプ用液状封止材、および、それに用いる樹脂組成物 | |
JP2013253183A (ja) | 先供給型液状半導体封止樹脂組成物 | |
JP5723665B2 (ja) | 先供給型液状半導体封止樹脂組成物 | |
JP5102095B2 (ja) | 圧縮成形用半導体封止エポキシ樹脂組成物およびそれを用いた半導体装置 | |
JP2024064082A (ja) | エポキシ樹脂組成物、半導体装置および半導体装置の製造方法 | |
JP2019214644A (ja) | ディップ用先供給型半導体封止材、それを用いた半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160920 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170523 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170718 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170801 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170817 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6196138 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |