KR900012122A - 액티브 매트릭스형 액정화상 표시장치 및 그 제조장치 - Google Patents
액티브 매트릭스형 액정화상 표시장치 및 그 제조장치 Download PDFInfo
- Publication number
- KR900012122A KR900012122A KR1019900000945A KR900000945A KR900012122A KR 900012122 A KR900012122 A KR 900012122A KR 1019900000945 A KR1019900000945 A KR 1019900000945A KR 900000945 A KR900000945 A KR 900000945A KR 900012122 A KR900012122 A KR 900012122A
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- South Korea
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- liquid crystal
- insulating substrate
- display device
- thin film
- image display
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/135—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도, 제2도 및 제3도, 본 발명의 실시예에 관한 액정화상표시장치를 구성하는 액티브기판의 단면도, 제4도는 액정패널의 실장순서를 나타내는 사시도, 제5도는 액티브형액정패널의 등가회로도.
Claims (5)
- 여러개의주사선(11)과 신호선(12)을 지니고, 단위그림 소자마다에 스위칭소자와 그림소자 전극(14)을 지닌 절연성 기판과, 투명도전성의 대향전극(15)을 지닌 투광성절연성 기판사이에 액정을 충전하여서 되는 액정화표시장치에 있어서,스위칭소자가 절연성게이트형트랜지스터(10)이고, 신호선(12)과 절연게이트형 트랜지스터(10)의 드레인 배선(22)이 두꺼운 유기박막으로 피복되어, 전술한 액정과는 전기적으로 절연되어 있음을 특징으로 하는 액정화상 표시장치.
- 여러개의 주사선과 신호선을 지니고, 단위 그림소자마다에 스위칭소자와 그림소자 전극을 지닌 절연성기판과, 투명도 전성의 대향전극을 지닌 투광성 절연성기판사이에 액정을 충전하여서 되는 액정화상표시장치에 있어서, 스위칭 소자가 절연게이트형트랜지스터이고, 신호선위와 절연게이트형 트랜지스터의 드레인 배선위가 두꺼운 유기박막으로 피복되어 있음을 특징으로 하는 액정화상표시장치.
- 여러개의 주사선과 신호선을 지니고, 단위그림소자마다에 절연게이트형 트랜지스터와 그림소자전극을 지닌 절연성 기판과, 투명도전성의 대향전극을 지닌 투광성 절연성 기판사이에 액정을 충전하여서 되는 액정화상표시장치에 있어서, 전술한 신호선과 절연게이트형트랜지스터의 드레인 배선의 형성에 있어서, 신호선과 드레인배선을 구성하는 도전성 박막의 선택적 형성을 위한 마스크재에 감광성 폴리이미드 계렬수지의 사용하고, 또한 감광성 폴리이미드계렬수지 박막을 그대로 남기고 절연성기판의 제작을 마감하는것을 특징으로 하는 액정화상표시장치의 제조방법.
- 여러개의 주사선과 신호선을 지니고, 단위그림소자마다에 절연게이트형과 트랜지스터와 글미소자 전극을 지닌 절연성 기판과, 투명도전성의 대향전극을 지닌 투광성 절연성이 기판사이에 액정을 충전하여서 되는 액정화상표시장치에 있어서, 전술한 신호선과 절연게이트형트랜지스터의 드레인 배선의 형성에 있어서, 신호선과 드레인배선을 구성하는 도전성 박막의 선택적 형성을 위한 마스크재에 감광성폴리이미드 계렬수지를 사용하고, 전술한 도전성박막의 식각후에 절연성기판을 가열하는 공정을 포함하여, 감광성 폴리 이미드계렬수지 박막을 그대로 남기고, 절연성기판의 제작을 마감하는 것을 특징으로 하는 액정화상표시장치의 제조방법.
- 여러개의 주사선과 신호선을 지니고, 단위그림소자마다에 절연게이트형 트랜지스터와 그림소자전극을 지닌 절연성 기판과, 투명 도전성의 대향전극을 지닌 투광성 절연성 기판사이에 액정을 충전하여서 되는 액정화상표시장치에 있어서, 절연성 기판위에 형성된 도전성 박막위의 감광성 폴리이미드계렬수지박막을 투광성절연성기판을 마스크로하여 산소플라즈마에 의하여 선택적으로 제거하는 것을 특징으로 하는 액정화상표시장치의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01-017949 | 1989-01-27 | ||
JP1-17949 | 1989-01-27 | ||
JP1794989 | 1989-01-27 | ||
JP28836889A JP2600929B2 (ja) | 1989-01-27 | 1989-11-06 | 液晶画像表示装置およびその製造方法 |
JP01-288368 | 1989-11-06 | ||
JP1-288368 | 1989-11-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900012122A true KR900012122A (ko) | 1990-08-03 |
KR950001052B1 KR950001052B1 (ko) | 1995-02-08 |
Family
ID=26354548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900000945A KR950001052B1 (ko) | 1989-01-27 | 1990-01-29 | 액티브 매트릭스형 액정 화상 표시장치 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5124823A (ko) |
EP (1) | EP0380311B1 (ko) |
JP (1) | JP2600929B2 (ko) |
KR (1) | KR950001052B1 (ko) |
DE (1) | DE69011884T2 (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
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NL8902206A (nl) * | 1989-09-01 | 1991-04-02 | Philips Nv | Weergeefinrichting. |
US5289030A (en) | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
US6979840B1 (en) * | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
JP3172840B2 (ja) * | 1992-01-28 | 2001-06-04 | 株式会社日立製作所 | アクティブマトリクス基板の製造方法および液晶表示装置 |
US6624450B1 (en) | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JP3245959B2 (ja) * | 1992-06-05 | 2002-01-15 | 松下電器産業株式会社 | 液晶画像表示装置の製造方法 |
US5728592A (en) * | 1992-10-09 | 1998-03-17 | Fujitsu Ltd. | Method for fabricating a thin film transistor matrix device |
US5757446A (en) * | 1994-10-14 | 1998-05-26 | Energy Conversion Devices, Inc. | Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels |
JP3421882B2 (ja) * | 1994-10-19 | 2003-06-30 | ソニー株式会社 | 多結晶半導体薄膜の作成方法 |
US6900855B1 (en) | 1995-10-12 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device having resin black matrix over counter substrate |
JPH09105953A (ja) | 1995-10-12 | 1997-04-22 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
US5995178A (en) * | 1995-10-16 | 1999-11-30 | Sharp Kabushiki Kaisha | Active matrix liquid crystal panel and method for repairing defect therein |
JP3516424B2 (ja) * | 1996-03-10 | 2004-04-05 | 株式会社半導体エネルギー研究所 | 薄膜半導体装置 |
KR100293808B1 (ko) | 1997-12-17 | 2001-10-24 | 박종섭 | 색띰방지용액정표시장치 |
JP3998317B2 (ja) * | 1998-03-12 | 2007-10-24 | 東芝電子エンジニアリング株式会社 | 液晶表示装置の製造方法 |
DE19848010C2 (de) * | 1998-10-19 | 2001-06-28 | Siemens Ag | Flüssigkristall-Anzeigeeinrichtung mit elektromagnetischer Schirmung |
US6747724B2 (en) | 2000-07-26 | 2004-06-08 | Casio Computer Co., Ltd. | Liquid crystal display device having non-display area with reduced width |
TWI336794B (en) * | 2001-12-11 | 2011-02-01 | Sony Corp | Liquid crystal display apparatus |
US20050048706A1 (en) * | 2003-08-27 | 2005-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP4646539B2 (ja) * | 2004-03-29 | 2011-03-09 | エーユー オプトロニクス コーポレイション | 液晶表示装置とその製造方法 |
US20090001599A1 (en) * | 2007-06-28 | 2009-01-01 | Spansion Llc | Die attachment, die stacking, and wire embedding using film |
KR20150022560A (ko) * | 2013-08-23 | 2015-03-04 | 삼성전기주식회사 | 인쇄회로기판 및 인쇄회로기판 제조 방법 |
Family Cites Families (25)
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DE2542166C3 (de) * | 1975-09-22 | 1978-09-28 | Siemens Ag | Flüssigkristallanzeige mit einer bistabilen cholesterinischen Flüssigkristallschicht |
JPS5468655A (en) * | 1977-11-11 | 1979-06-01 | Casio Comput Co Ltd | Liquid crystal display device |
JPS5753966A (ja) * | 1980-09-17 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Kinzokupataannohogohoho |
US4572617A (en) * | 1982-06-23 | 1986-02-25 | Canon Kabushiki Kaisha | Electrooptical device having thinner liquid crystal layer in display portions |
JPS6017720A (ja) * | 1983-07-12 | 1985-01-29 | Canon Inc | 液晶装置 |
JPS6045219A (ja) * | 1983-08-23 | 1985-03-11 | Toshiba Corp | アクテイブマトリクス型表示装置 |
US4929569A (en) * | 1984-01-23 | 1990-05-29 | Ovonic Imaging Systems, Inc. | Method of fabricating amorphous silican diode addressed liquid crystal display |
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JPS6167023A (ja) * | 1984-09-10 | 1986-04-07 | Sharp Corp | 液晶表示装置 |
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JPS6280629A (ja) * | 1985-10-03 | 1987-04-14 | Sharp Corp | 液晶表示素子の製造方法 |
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JPS62136049A (ja) * | 1985-12-10 | 1987-06-19 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
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JPH0691252B2 (ja) * | 1986-11-27 | 1994-11-14 | 日本電気株式会社 | 薄膜トランジスタアレイ |
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JP2615608B2 (ja) * | 1987-04-07 | 1997-06-04 | 日本電気株式会社 | 半導体装置の製造方法 |
US4918504A (en) * | 1987-07-31 | 1990-04-17 | Nippon Telegraph And Telephone Corporation | Active matrix cell |
US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
-
1989
- 1989-11-06 JP JP28836889A patent/JP2600929B2/ja not_active Expired - Fee Related
-
1990
- 1990-01-19 US US07/467,548 patent/US5124823A/en not_active Expired - Lifetime
- 1990-01-23 EP EP90300718A patent/EP0380311B1/en not_active Expired - Lifetime
- 1990-01-23 DE DE69011884T patent/DE69011884T2/de not_active Expired - Fee Related
- 1990-01-29 KR KR1019900000945A patent/KR950001052B1/ko not_active IP Right Cessation
-
1993
- 1993-09-20 US US08/123,197 patent/US5459092A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2600929B2 (ja) | 1997-04-16 |
EP0380311B1 (en) | 1994-08-31 |
JPH02275925A (ja) | 1990-11-09 |
US5459092A (en) | 1995-10-17 |
DE69011884D1 (de) | 1994-10-06 |
DE69011884T2 (de) | 1995-03-16 |
US5124823A (en) | 1992-06-23 |
KR950001052B1 (ko) | 1995-02-08 |
EP0380311A1 (en) | 1990-08-01 |
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