KR840003869A - 화살 표시장치 - Google Patents

화살 표시장치 Download PDF

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Publication number
KR840003869A
KR840003869A KR1019830000620A KR830000620A KR840003869A KR 840003869 A KR840003869 A KR 840003869A KR 1019830000620 A KR1019830000620 A KR 1019830000620A KR 830000620 A KR830000620 A KR 830000620A KR 840003869 A KR840003869 A KR 840003869A
Authority
KR
South Korea
Prior art keywords
image display
semiconductor layer
insulating substrate
display apparatus
transparent insulating
Prior art date
Application number
KR1019830000620A
Other languages
English (en)
Other versions
KR860000229B1 (ko
Inventor
마꼬또(외3) 마쯔이
Original Assignee
미따 가쯔시게
가부시끼가이샤 히다찌세이사구쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미따 가쯔시게, 가부시끼가이샤 히다찌세이사구쇼 filed Critical 미따 가쯔시게
Publication of KR840003869A publication Critical patent/KR840003869A/ko
Application granted granted Critical
Publication of KR860000229B1 publication Critical patent/KR860000229B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

내용 없음

Description

화상 표시장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도 및 제7도는 본 발명 실시예의 박막트랜지스터·스위치·매트릭스의 1화소분을 나타내는 평면도 및 단면도.

Claims (5)

  1. 투광성 절연기판위에 배열된 화상표시부와 이 투과성 절연기판위에 형성된 반도체층에 형성된 트랜지스터부를 적어도 가진 화상표시장치에 있어서, 적어도 이 트랜지스터부의 배선부는 상기 투광성 절연기판위에 형성된 반도체층위에 연재해서 이루어진 것을 특징으로 하는 화상표시장치.
  2. 제1항에 있어서, 상기 반도체층이 복수개의 개공부를 가지고, 이 반도체층에 상기 트랜지스터부 및 이 층위에 이 트랜지스터부의 배선부가 연재하고, 상기 개공부가 화상표시부를 구성해서 이루어진 것을 특징으로 하는 화상표시장치.
  3. 제1항 또는 제2항에 있어서, 상기 반도체층이 체형상으로 형성되어서 이루어진 것을 특징으로 하는 화상표시장치.
  4. 제1항 또는 제2항에 있어서, 상기 화상표시부가, 액정에 희한 화상표시부인 것을 특징으로 하는 화상표시장치.
  5. 제1항 또는 제2항에 있어서, 상기 화상표시부가 전기발광에 의한 화상표시부인 것을 특징으로 하는 화상표시장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830000620A 1982-02-17 1983-02-16 화상 표시장치 KR860000229B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57-22744 1982-02-17
JP57022744A JPS58140781A (ja) 1982-02-17 1982-02-17 画像表示装置

Publications (2)

Publication Number Publication Date
KR840003869A true KR840003869A (ko) 1984-10-04
KR860000229B1 KR860000229B1 (ko) 1986-03-15

Family

ID=12091206

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830000620A KR860000229B1 (ko) 1982-02-17 1983-02-16 화상 표시장치

Country Status (6)

Country Link
US (1) US4904989A (ko)
EP (1) EP0086349B1 (ko)
JP (1) JPS58140781A (ko)
KR (1) KR860000229B1 (ko)
CA (1) CA1207420A (ko)
DE (1) DE3363314D1 (ko)

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JPS60227235A (ja) * 1984-04-26 1985-11-12 Canon Inc 画像形成装置
FR2571913B1 (fr) * 1984-10-17 1986-12-26 Richard Joseph Ecran d'affichage a matrice active a double transistor d'adressage
US4689116A (en) * 1984-10-17 1987-08-25 L'etat Francais Represented By The Minister Of Ptt (Centre National D'etudes Des Telecommunications) Process for fabricating electronic circuits based on thin-film transistors and capacitors
US4688896A (en) * 1985-03-04 1987-08-25 General Electric Company Information conversion device with auxiliary address lines for enhancing manufacturing yield
FR2585167B1 (fr) * 1985-07-19 1993-05-07 Gen Electric Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince
US4819038A (en) * 1986-12-22 1989-04-04 Ibm Corporation TFT array for liquid crystal displays allowing in-process testing
JP2769830B2 (ja) * 1989-01-23 1998-06-25 藤森工業株式会社 液晶セルの製造法
US5194974A (en) * 1989-08-21 1993-03-16 Sharp Kabushiki Kaisha Non-flicker liquid crystal display with capacitive charge storage
KR940000592B1 (ko) * 1989-08-21 1994-01-26 샤프 가부시끼가이샤 액정표시장치
US5075595A (en) * 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
US5471225A (en) * 1993-04-28 1995-11-28 Dell Usa, L.P. Liquid crystal display with integrated frame buffer
JPH0887034A (ja) * 1994-09-16 1996-04-02 Toshiba Corp 液晶表示装置およびその製造方法
KR100205259B1 (ko) * 1996-03-04 1999-07-01 구자홍 액티브매트릭스 액정디스플레이의 구동회로
US6462722B1 (en) 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
EP1255240B1 (en) * 1997-02-17 2005-02-16 Seiko Epson Corporation Active matrix electroluminescent display with two TFTs and storage capacitor in each pixel
US6175345B1 (en) * 1997-06-02 2001-01-16 Canon Kabushiki Kaisha Electroluminescence device, electroluminescence apparatus, and production methods thereof
JP3042493B2 (ja) 1998-05-13 2000-05-15 日本電気株式会社 液晶表示装置およびその駆動方法
JP2005209656A (ja) * 1998-12-01 2005-08-04 Sanyo Electric Co Ltd カラーｅｌ表示装置
JP2000227771A (ja) 1998-12-01 2000-08-15 Sanyo Electric Co Ltd カラーｅｌ表示装置
JP2000227770A (ja) 1998-12-01 2000-08-15 Sanyo Electric Co Ltd カラーｅｌ表示装置
JP2005166687A (ja) * 1998-12-01 2005-06-23 Sanyo Electric Co Ltd カラーｅｌ表示装置
TW468269B (en) * 1999-01-28 2001-12-11 Semiconductor Energy Lab Serial-to-parallel conversion circuit, and semiconductor display device employing the same
JP4637315B2 (ja) * 1999-02-24 2011-02-23 株式会社半導体エネルギー研究所 表示装置
JP5210473B2 (ja) * 1999-06-21 2013-06-12 株式会社半導体エネルギー研究所 表示装置
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Also Published As

Publication number Publication date
CA1207420A (en) 1986-07-08
JPH0436368B2 (ko) 1992-06-16
DE3363314D1 (en) 1986-06-12
JPS58140781A (ja) 1983-08-20
EP0086349A1 (en) 1983-08-24
KR860000229B1 (ko) 1986-03-15
US4904989A (en) 1990-02-27
EP0086349B1 (en) 1986-05-07

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