KR920007203A - 액정표시소자의 박막 트랜지스터 - Google Patents

액정표시소자의 박막 트랜지스터 Download PDF

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Publication number
KR920007203A
KR920007203A KR1019900015251A KR900015251A KR920007203A KR 920007203 A KR920007203 A KR 920007203A KR 1019900015251 A KR1019900015251 A KR 1019900015251A KR 900015251 A KR900015251 A KR 900015251A KR 920007203 A KR920007203 A KR 920007203A
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KR
South Korea
Prior art keywords
electrode
thin film
liquid crystal
crystal display
display devices
Prior art date
Application number
KR1019900015251A
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English (en)
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KR930004349B1 (ko
Inventor
윤기천
Original Assignee
김정배
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김정배, 삼성전관 주식회사 filed Critical 김정배
Priority to KR1019900015251A priority Critical patent/KR930004349B1/ko
Publication of KR920007203A publication Critical patent/KR920007203A/ko
Application granted granted Critical
Publication of KR930004349B1 publication Critical patent/KR930004349B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

내용 없음.

Description

액정 표시소자의 박막 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래 액정 표시소자의 박막 트랜지스터를 개략적으로 나타낸 발췌 단면도.
제2도는 본 발명에 따른 액정 표시소자의 박막 트랜지스터를 개략적으로 나타낸 발췌 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 기판 2 : 게이트 전극
3 : 제1절연층 4 : 제2절연층
5 : 화소전극 6 : 반도체층
7 : 소오스전극 8 : 드레인전극
8A : 제1전극 8B : 제2전극
9 : 배향막

Claims (1)

  1. 투명기판에 일방향으로 배열된 게이트라인에 연결되는 게이트전극, 상기 게이트전극을 전기적으로 절연하는 절연층, 비정질 실리콘으로 된 반도체층, 상기 게이트라인에 대해 직교하는 방향으로 배열되는 소오스라인에 전기적으로 연결되는 소오스전극과, 그 일측의 화소전극에 연결되는 드레인전극을 구비한 액정 표시소자의 박막 트랜지스터에 있어서, 상기 드레인 전극이 두겹의 제1전극과 제2전극으로 분리 형성되고, 상기 화소전극은 상기 제1전극 또는 제2전극과 일체로 형성되되, 그 소재가 ZnO : Al로 이루어지도록 하여 된 것을 특징으로 하는 액정 표시소자의 박막 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900015251A 1990-09-26 1990-09-26 액정 표시소자의 박막 트랜지스터 KR930004349B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900015251A KR930004349B1 (ko) 1990-09-26 1990-09-26 액정 표시소자의 박막 트랜지스터

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900015251A KR930004349B1 (ko) 1990-09-26 1990-09-26 액정 표시소자의 박막 트랜지스터

Publications (2)

Publication Number Publication Date
KR920007203A true KR920007203A (ko) 1992-04-28
KR930004349B1 KR930004349B1 (ko) 1993-05-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900015251A KR930004349B1 (ko) 1990-09-26 1990-09-26 액정 표시소자의 박막 트랜지스터

Country Status (1)

Country Link
KR (1) KR930004349B1 (ko)

Also Published As

Publication number Publication date
KR930004349B1 (ko) 1993-05-26

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