KR960042171A - 액정 전기광학 장치 - Google Patents
액정 전기광학 장치 Download PDFInfo
- Publication number
- KR960042171A KR960042171A KR1019960013583A KR19960013583A KR960042171A KR 960042171 A KR960042171 A KR 960042171A KR 1019960013583 A KR1019960013583 A KR 1019960013583A KR 19960013583 A KR19960013583 A KR 19960013583A KR 960042171 A KR960042171 A KR 960042171A
- Authority
- KR
- South Korea
- Prior art keywords
- electro
- optical device
- transparent conductive
- conductive film
- pixel electrode
- Prior art date
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
보조 캐패시터를 가지는 활성 매트릭스 액정 표시 장치. ITO의 두개 투명 전도층이 절연 막의 반대편에 형성되어 있다. 제1전도층은 픽셀 전극을 형성한다. 제2투명 전도성 막은 절연 막을 통해 픽셀 전극의 적어도 일부분과 중첩되어 픽셀의 구경 비를 악화시키지 않고 보조 캐패시터를 형성한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 활성 매트릭스 액정 표시장치의 부분 단면도로서, 하나의 픽셀 부위를 나타내며, 제2도는 제1도에 도시된 액정 표시장치의 부분 평면도이다.
Claims (10)
- 픽셀 형성용 픽셀 전극을 형성하는 제1투명 전도성 막; 절연 막; 및 상기 제1투명 전도성 막으로부터 상기 절연 막의 반대편에 위치되며, 상기 절연 막을 통해서 상기 픽셀 전극의 적어도 일부분과 중첩하는 상기 제2투명 전도성 막을 포함하여, 상기 제2투명 전도성 막, 상기 절연 막 및 상기 픽셀 전극을 포함하는 보조 캐패시터들을 제공하는 것을 특징으로 하는 전기광학 장치.
- 제1항에 있어서, 상기 전기광학 장치는 활성 매트릭스 액정 표시 장치인 것을 특징으로 하는 전기광학 장치.
- 제1항에 있어서, 상기 투명 전도성 막은 ITO로 제조되는 것을 특징으로 하는 전기광학 장치.
- 제1항에 있어서, 상기 투명 전도성 막은 SnO2인 것을 특징으로 하는 전기광학 장치.
- 제1항에 있어서, 상기 보조 캐패시터들의 상응하는 하나와 병렬적으로 제공되는 픽셀 캐패시터 및 상기 픽셀 전극들의 상응하는 하나와 이 픽셀 전극으로부터 반대편에 있는 대항 전극사이에 제공되는 전자 광학 변조 층을 더 포함하는 것을 특징으로 하는 전기광학 장치.
- 제5항에 있어서, 상기 전자 광학 변조 층은 액정을 포함하는 것을 특징으로 하는 전기광학 장치.
- 제1항에 있어서, 소스와 드레인 및 상기 소스와 드레인의 사이에 제공되는 채널을 더 포함하며, 상기 드레인은 상기 픽셀 전극중 상응하는 하나와 연결되어 있는 것을 특징으로 하는 전기광학 장치.
- 제7항에 있어서, 상기 박막 트랜지스터는 각각 상기 채널 및 상응하는 소스와 드레인의 사이에 제공되는 옵셋 게이트 부위를 더 포함하는 것을 특징으로 하는 전기광학 장치.
- 제7항에 있어서, 상기 박막 트랜지스터 및 상기 픽셀 전극은 활성 매트릭스에 제공되는 것을 특징으로 하는 전기광학 장치.
- 제7항에 있어서, 상기 소스와 사익 드레인 및 상기 채널은 결정성 실리콘 막에 제공되는 것을 특징으로 하는 전기광학 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7134835A JPH08306926A (ja) | 1995-05-07 | 1995-05-07 | 液晶電気光学装置 |
JP95-134835 | 1995-05-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960042171A true KR960042171A (ko) | 1996-12-21 |
KR100305275B1 KR100305275B1 (ko) | 2002-11-04 |
Family
ID=15137580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960013583A KR100305275B1 (ko) | 1995-05-07 | 1996-04-30 | 액티브매트릭스형표시장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5745195A (ko) |
JP (1) | JPH08306926A (ko) |
KR (1) | KR100305275B1 (ko) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5917563A (en) | 1995-10-16 | 1999-06-29 | Sharp Kabushiki Kaisha | Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line |
JP3126661B2 (ja) * | 1996-06-25 | 2001-01-22 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP3634089B2 (ja) | 1996-09-04 | 2005-03-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
JPH10104663A (ja) * | 1996-09-27 | 1998-04-24 | Semiconductor Energy Lab Co Ltd | 電気光学装置およびその作製方法 |
JP3454340B2 (ja) * | 1996-11-22 | 2003-10-06 | シャープ株式会社 | 液晶表示装置 |
US6088070A (en) | 1997-01-17 | 2000-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode |
JP3376379B2 (ja) * | 1997-02-20 | 2003-02-10 | 富士通ディスプレイテクノロジーズ株式会社 | 液晶表示パネル、液晶表示装置及びその製造方法 |
JP3784491B2 (ja) * | 1997-03-28 | 2006-06-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
JPH1152429A (ja) * | 1997-06-05 | 1999-02-26 | Seiko Epson Corp | 液晶パネル用基板、液晶パネル及びそれを用いた電子機器 |
KR19990003712A (ko) * | 1997-06-26 | 1999-01-15 | 김영환 | 초고개구율 액정 표시 소자 및 그의 제조방법 |
JP3538844B2 (ja) * | 1997-07-23 | 2004-06-14 | セイコーエプソン株式会社 | 液晶装置、液晶装置の製造方法及び電子機器 |
KR100508057B1 (ko) * | 1997-11-19 | 2005-12-01 | 삼성전자주식회사 | 박막트랜지스터기판및박막트랜지스터액정표시장치제조방법 |
JP3941901B2 (ja) | 1998-04-28 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4180690B2 (ja) * | 1998-06-05 | 2008-11-12 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置 |
US6313481B1 (en) | 1998-08-06 | 2001-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
KR100312753B1 (ko) * | 1998-10-13 | 2002-04-06 | 윤종용 | 광시야각액정표시장치 |
JP3844913B2 (ja) * | 1999-06-28 | 2006-11-15 | アルプス電気株式会社 | アクティブマトリックス型液晶表示装置 |
JP3796070B2 (ja) * | 1999-07-21 | 2006-07-12 | シャープ株式会社 | 液晶表示装置 |
KR100577410B1 (ko) * | 1999-11-30 | 2006-05-08 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
FR2826766B1 (fr) * | 2001-06-29 | 2003-10-31 | Thales Avionics Lcd | Matrice active de transistors en couches minces ou tft pour capteur optique ou ecran de visualisation |
KR100840318B1 (ko) | 2001-12-10 | 2008-06-20 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그의 제조 방법과 액정 표시 장치 |
CN1325984C (zh) * | 2001-09-26 | 2007-07-11 | 三星电子株式会社 | 液晶显示器的薄膜晶体管阵列板 |
TWI226712B (en) * | 2003-12-05 | 2005-01-11 | Au Optronics Corp | Pixel structure and fabricating method thereof |
TWI351764B (en) * | 2007-04-03 | 2011-11-01 | Au Optronics Corp | Pixel structure and method for forming the same |
JP5589359B2 (ja) | 2009-01-05 | 2014-09-17 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
CN102221761B (zh) * | 2010-04-16 | 2014-04-02 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶器件及其制作方法 |
US9230994B2 (en) | 2010-09-15 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP2012080110A (ja) * | 2011-11-18 | 2012-04-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2014199899A (ja) | 2012-08-10 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9231002B2 (en) | 2013-05-03 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
TWI679772B (zh) | 2013-05-16 | 2019-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
CN116088233A (zh) * | 2021-11-05 | 2023-05-09 | 瀚宇彩晶股份有限公司 | 显示面板及其制作方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4470060A (en) * | 1981-01-09 | 1984-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display with vertical non-single crystal semiconductor field effect transistors |
US5365079A (en) * | 1982-04-30 | 1994-11-15 | Seiko Epson Corporation | Thin film transistor and display device including same |
US5162933A (en) * | 1990-05-16 | 1992-11-10 | Nippon Telegraph And Telephone Corporation | Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium |
JP2616160B2 (ja) * | 1990-06-25 | 1997-06-04 | 日本電気株式会社 | 薄膜電界効果型トランジスタ素子アレイ |
US5245450A (en) * | 1990-07-23 | 1993-09-14 | Hosiden Corporation | Liquid crystal display device with control capacitors for gray-scale |
JP3150365B2 (ja) * | 1991-07-22 | 2001-03-26 | 株式会社東芝 | 液晶表示装置 |
EP0569601B1 (en) * | 1991-11-29 | 1999-10-13 | Seiko Epson Corporation | Liquid crystal display and method of manufacturing same |
JP3245959B2 (ja) * | 1992-06-05 | 2002-01-15 | 松下電器産業株式会社 | 液晶画像表示装置の製造方法 |
FR2702286B1 (fr) * | 1993-03-04 | 1998-01-30 | Samsung Electronics Co Ltd | Affichage à cristaux liquides et procédé pour le fabriquer. |
US5483366A (en) * | 1994-07-20 | 1996-01-09 | David Sarnoff Research Center Inc | LCD with hige capacitance pixel having an ITO active region/poly SI pixel region electrical connection and having poly SI selection line extensions along pixel edges |
-
1995
- 1995-05-07 JP JP7134835A patent/JPH08306926A/ja active Pending
-
1996
- 1996-04-30 KR KR1019960013583A patent/KR100305275B1/ko active IP Right Grant
- 1996-05-07 US US08/646,511 patent/US5745195A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100305275B1 (ko) | 2002-11-04 |
JPH08306926A (ja) | 1996-11-22 |
US5745195A (en) | 1998-04-28 |
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