KR20060126602A - 기판처리장치 및 반도체장치의 제조방법 - Google Patents
기판처리장치 및 반도체장치의 제조방법 Download PDFInfo
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- KR20060126602A KR20060126602A KR1020067018841A KR20067018841A KR20060126602A KR 20060126602 A KR20060126602 A KR 20060126602A KR 1020067018841 A KR1020067018841 A KR 1020067018841A KR 20067018841 A KR20067018841 A KR 20067018841A KR 20060126602 A KR20060126602 A KR 20060126602A
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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Abstract
Description
Claims (20)
- 로드록실과 이재실(移載室)이 케이싱(筐體) 내부에 배면측으로부터 순차로 배설(配設)되어 있음과 동시에 상기 로드록실의 위쪽에 배설되어 기판을 처리하는 처리실을 구비하고 있으며, 상기 이재실의 배면측에 있어서 상기 로드록실이 배설되어 있지 않은 곳에는 개구부와 그 개구부를 개폐하는 개폐수단이 배설되어 있는 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서, 상기 개구부는 상기 이재실 내부를 메인트넌스(maintenance)하기 위해 설치되어 있는 것을 특징으로 하는 기판처리장치.
- 제2항에 있어서, 상기 개구부는 사람이 통과할 수 있는 크기로 설정되어 있는 것을 특징으로 하는 기판처리장치.
- 제2항에 있어서, 상기 개폐수단은 상기 케이싱 외면과 접하고 있는 것을 특징으로 기판처리 장치.
- 기판을 기판보지구(保持具)에 보유하면서 대기시키는 대기실과 이재실과 상기 기판을 수용하는 캐리어를 재치하는 캐리어 재치 수단이 케이싱 내부에 배면 측으로부터 순차로 배설되어 있음과 동시에 상기 대기실의 위쪽에 배설되어 상기 기 판을 처리하는 처리실을 구비하고 있으며, 상기 기판보지구에 보지된 상기 기판의 중심과 상기 캐리어 재치 수단에 재치 된 상기 캐리어의 상기 기판의 중심을 잇는 선이 상기 케이싱의 폭 방향의 중심선에 대하여 한쪽으로 치우쳐 있고, 반대 쪽의 상기 이재실의 정면 측 또는 배면 측에는 개구부와 그 개구부를 개폐하는 개폐수단이 배설되어 있는 것을 특징으로 하는 기판처리장치.
- 제5항에 있어서, 상기 이재실 내부의 한쪽에는 상기 기판을 이재하는 기판 이재장치가 배치되고 다른 쪽에는 상기 기판을 정합하는 기판 정합장치가 배치되어 있는 것을 특징으로 하는 기판처리장치.
- 제6항에 있어서, 상기 기판 이재장치의 수평방향의 회전 중심은 상기 선 상에 배치되어 있는 것을 특징으로 하는 기판처리장치.
- 제5항에 있어서, 상기 개구부는 상기 이재실 내부를 메인트넌스하기 위해 설치되어 있는 것을 특징으로 하는 기판처리장치.
- 제6항에 있어서, 상기 개구부는 상기 기판 이재장치 및 상기 기판 정합장치를 메인트넌스하기 위해 설치되어 있는 것을 특징으로 하는 기판처리장치.
- 제8항에 있어서, 상기 개구부는 사람이 통과할 수 있는 크기로 설정되어 있 는 것을 특징으로 하는 기판처리장치.
- 제10항에 있어서, 상기 대기실은 로드록실인 것을 특징으로 하는 기판처리 장치.
- 제5항에 있어서, 상기 이재실에는 상기 이재실의 공기를 청정하는 크린 유닛와 상기 기판을 정합하는 기판 정합장치와 상기 기판을 이재하는 기판 이재장치가 상기 크린 유닛으로부터 흘러 나오는 가스의 흐름 방향으로 순차로 배설되어 있는 것을 특징으로 하는 기판처리장치.
- 제12항에 있어서, 상기 개구부는 상기 기판 이재장치 및 상기 기판 정합장치를 메인트넌스하기 위해 설치되어 있는 것을 특징으로 하는 기판처리장치.
- 제5항에 있어서, 상기 대기실은 로드록실인 것을 특징으로 하는 기판처리 장치.
- 제1항에 있어서, 상기 개구부 및 개폐수단은 수평방향에서 볼 때 상기 크린 유닛 측에 가까워짐에 따라 상기 이재실의 공간을 점차 작게 하도록 배치되어 있는 것을 특징으로 하는 기판처리장치.
- 제5항에 있어서, 상기 개구부 및 개폐수단은 수평방향에서 볼 때 상기 크린 유닛 측에 가까워짐에 따라 상기 이재실의 공간을 점차 작게 하도록 배치되어 있는 것을 특징으로 하는 기판처리장치.
- 제12항에 있어서, 상기 개구부 및 개폐수단은 수평방향에서 볼 때 상기 크린 유닛 측에 가까워짐에 따라 상기 이재실의 공간을 점차 작게 하도록 배치되어 있는 것을 특징으로 하는 기판처리장치.
- 제2항에 있어서, 상기 로드록실과 상기 이재실이 상기 케이싱 내부에 배면측으로부터 순차로 배설되어 있고, 상기 로드록실이 상기 케이싱의 폭 방향의 중심선에 대하여 한쪽으로 치우쳐 있고, 반대쪽의 상기 이재실의 배면측에는 개구부와 그 개구부를 개폐하는 개폐수단이 배설되어 있는 것을 특징으로 하는 기판처리장치.
- 제18항에 있어서, 상기 로드록실의 배면 측에는 상기 개구부와 그 개구부를 개폐하는 개폐수단이 배설되어 있는 것을 특징으로 하는 기판처리장치.
- 로드록실과 이재실이 케이싱 내부에 배면측으로부터 순차로 배설되어 있음과 동시에, 상기 로드록실의 위쪽에 배설되어 기판을 처리하는 처리실과 상기 처리실을 가열하는 히터 유닛과 상기 처리실에 가스를 공급하는 가스 공급관과 상기 처리실을 배기하는 배기관을 구비하고 있으며, 상기 이재실의 배면측에 있어서 상기 로 드록실이 배설되어 있지 않은 곳에는 개구부와 그 개구부를 개폐하는 개폐수단이 배설되어 있는 기판처리장치를 이용하여 상기 기판을 처리하는 반도체장치의 제조방법으로서, 상기 히터 유닛에 의해 상기 처리실을 가열하는 단계와 상기 처리실에 상기 가스 공급관으로부터 상기 가스를 공급하는 단계와 상기 기판을 처리하는 단계와 상기 처리실을 배기관에 의해 배기하는 단계를 갖는 것을 특징으로 하는 반도체장치의 제조방법.
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Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2004-00205577 | 2004-07-13 | ||
JP2004205577 | 2004-07-13 |
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KR20060126602A true KR20060126602A (ko) | 2006-12-07 |
KR100831933B1 KR100831933B1 (ko) | 2008-05-23 |
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KR1020067018841A KR100831933B1 (ko) | 2004-07-13 | 2005-06-27 | 기판처리장치 및 반도체장치의 제조방법 |
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US (1) | US9111972B2 (ko) |
JP (2) | JP4559427B2 (ko) |
KR (1) | KR100831933B1 (ko) |
WO (1) | WO2006006377A1 (ko) |
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JP4606388B2 (ja) | 2006-06-12 | 2011-01-05 | 川崎重工業株式会社 | 基板移載装置の搬送系ユニット |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8895943B2 (en) * | 2010-12-14 | 2014-11-25 | Mapper Lithography Ip B.V. | Lithography system and method of processing substrates in such a lithography system |
JP2012169534A (ja) * | 2011-02-16 | 2012-09-06 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
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JP2003092329A (ja) * | 2001-09-18 | 2003-03-28 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2003203961A (ja) * | 2002-01-04 | 2003-07-18 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP4369159B2 (ja) * | 2003-05-26 | 2009-11-18 | 株式会社日立製作所 | 真空処理装置 |
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US9111972B2 (en) | 2015-08-18 |
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JP2010283356A (ja) | 2010-12-16 |
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