WO2017022366A1 - 基板処理装置、半導体装置の製造方法および記録媒体 - Google Patents
基板処理装置、半導体装置の製造方法および記録媒体 Download PDFInfo
- Publication number
- WO2017022366A1 WO2017022366A1 PCT/JP2016/069123 JP2016069123W WO2017022366A1 WO 2017022366 A1 WO2017022366 A1 WO 2017022366A1 JP 2016069123 W JP2016069123 W JP 2016069123W WO 2017022366 A1 WO2017022366 A1 WO 2017022366A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transfer chamber
- pressure
- chamber
- exhaust
- substrate
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67775—Docking arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Definitions
- the present invention relates to a substrate processing apparatus, a semiconductor device manufacturing method, and a recording medium.
- a vertical substrate processing apparatus is used in a heat treatment of a substrate in a manufacturing process of a semiconductor device (device).
- loading wafer charging
- unloading wafer discharging
- a transfer chamber disposed below a processing chamber for processing wafers.
- an air flow using clean air is formed in order to cool the high-temperature wafer unloaded from the processing chamber to a predetermined temperature. This air flow is formed by providing a clean unit containing a filter and a blower along the side wall on one side of the transfer chamber and blowing clean air from the clean unit into the transfer chamber (see, for example, Patent Document 1).
- An object of the present invention is to provide a technique capable of shortening the time for reducing the oxygen concentration in the transfer chamber.
- a transfer chamber for transferring the substrate from a storage container for storing the substrate;
- a purge gas supply mechanism for supplying a purge gas into the transfer chamber;
- a pressure control mechanism installed in an exhaust passage for exhausting the atmosphere in the transfer chamber and controlling the pressure in the transfer chamber;
- the pressure control mechanism includes: An exhaust damper that fully opens or closes the exhaust path; An adjustment damper that is installed in the exhaust damper and holds the transfer chamber at a predetermined pressure; A technique is provided.
- (C) It is a structural diagram which shows the full open operation of a pressure control mechanism. It is a longitudinal cross-sectional view of the conveyance chamber used suitably by embodiment of this invention. It is a longitudinal cross-sectional view of the load port unit used suitably by embodiment of this invention. It is a figure which shows the exhaust path of the load port unit used suitably by embodiment of this invention. It is a longitudinal cross-sectional view of the pressure control mechanism used suitably by embodiment of this invention.
- the substrate processing apparatus 4 is configured as a vertical heat treatment apparatus (batch type vertical heat treatment apparatus) that performs a heat treatment step in an IC manufacturing method.
- a FOUP (Front Opening Unified Pod) 100 is used as a carrier that is a storage container that accommodates a wafer W as a substrate.
- the pod 100 is also used as a transfer container for transferring the wafer W between the substrate processing apparatuses.
- front, rear, left and right are based on FIG. That is, the direction X1 shown in FIG. 2 is the right, the direction X2 is the left, the direction Y1 is the front, and the direction Y2 is the back.
- the substrate processing apparatus 4 includes a processing furnace 8, a first transfer chamber 12, and a second transfer chamber 16, which will be described later.
- a first transfer chamber 12 (hereinafter referred to as a transfer chamber 12) as a transfer chamber that forms a space for transferring the wafer W is disposed on the front side in the housing of the substrate processing apparatus 4.
- a load port unit 106 serving as a pod opening / closing mechanism for opening / closing the lid of the pod 100 and loading / unloading the wafer W into / from the transfer chamber 12 is disposed on the front side of the transfer chamber 12. The configuration of the load port unit 106 will be described later.
- a gate valve 128 is arranged on the rear side of the housing of the transfer chamber 12.
- the transfer chamber 12 is connected to a second transfer chamber 16 described later via a gate valve 128.
- a transfer machine 124 is installed as a substrate transfer mechanism (substrate transfer robot) for transferring the wafer W.
- the transfer machine 124 is configured to be moved up and down by a transfer machine elevator 131 as a drive mechanism installed in the transfer chamber 12 and to be moved in the front-rear and left-right directions by a linear actuator 132.
- the inside of the transfer chamber 12 can be purged while circulating a purge gas.
- a second transfer chamber 16 (hereinafter referred to as the preparation chamber 16) serving as a preparation chamber that forms a space in which the boat 40 moves up and down.
- a communication port communicating with a reaction tube 36 described later is formed in the ceiling portion of the preparation chamber 16.
- a boat elevator 46 is installed as an elevating mechanism (conveying mechanism) that elevates a seal cap 60 described later in the vertical direction.
- the boat elevator 46 is configured such that the boat 40 described later can be carried in and out of the reaction tube 36 by raising and lowering the seal cap 60.
- the preparation chamber 16 can circulate purge gas, can detect an oxygen concentration by an oxygen concentration detector installed in the preparation chamber 16, and can control the oxygen concentration in the preparation chamber 16. ing.
- a processing furnace 8 is provided above the preparation chamber 16.
- the processing furnace 8 includes a heater 34 as a heating means (heating mechanism).
- the heater 34 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.
- the heater 34 also functions as an activation mechanism (excitation unit) that activates (excites) gas with heat.
- a reaction tube 36 that constitutes a reaction vessel (processing vessel) concentrically with the heater 34 is disposed inside the heater 34.
- the reaction tube 36 is made of a heat-resistant material such as quartz or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened.
- a processing chamber 38 is formed in the hollow cylindrical portion of the reaction tube 36. The processing chamber 38 is configured to accommodate the boat 40 loaded with wafers W.
- a nozzle 42 is provided in the processing chamber 38 so as to penetrate the lower part of the reaction tube 36.
- the nozzle 42 is made of a heat resistant material such as quartz or SiC.
- a gas supply pipe 44 a is connected to the nozzle 42.
- the gas supply pipe 44a is provided with a mass flow controller (MFC) 46a that is a flow rate controller (flow rate control unit) and a valve 48a that is an on-off valve in order from the upstream direction.
- MFC mass flow controller
- a gas supply pipe 44b for supplying an inert gas is connected downstream of the valve 48a of the gas supply pipe 44a.
- the gas supply pipe 44b is provided with an MFC 46b and a valve 48b in order from the upstream direction.
- a processing gas supply unit that is a processing gas supply system is mainly configured by the gas supply pipe 44a, the MFC 46a, and the valve 48a.
- the nozzle 42 is provided in an annular space between the inner wall of the reaction tube 36 and the wafer W so as to rise upward in the arrangement direction of the wafer W along the upper portion from the lower portion of the inner wall of the reaction tube 36. Yes.
- a plurality of gas supply holes 42 ⁇ / b> A for supplying gas are provided on the side surface of the nozzle 42.
- the gas supply holes 42 ⁇ / b> A are opened so as to face the center of the reaction tube 36, and can supply gas toward the wafer W.
- the soot reaction pipe 36 is provided with an exhaust pipe 50 for exhausting the atmosphere in the processing chamber 38.
- the exhaust pipe 50 is provided with a pressure sensor 52 as a pressure detector (pressure detector) for detecting the pressure in the processing chamber 38 and an APC (Auto Pressure Controller) valve 54 as a pressure regulator (pressure regulator).
- a vacuum pump 56 as an evacuation device is connected.
- the APC valve 54 can open and close the valve to evacuate and stop the evacuation in the processing chamber 38, and adjust the valve opening based on the pressure information detected by the pressure sensor 52. Thus, the pressure in the processing chamber 38 can be adjusted.
- the exhaust system is mainly configured by the exhaust pipe 50, the APC valve 54, and the pressure sensor 52.
- the vacuum pump 56 may be included in the exhaust system.
- the soot reaction tube 36 is provided with a temperature detector 58 as a temperature detector.
- a temperature detector 58 By adjusting the power supply to the heater 34 based on the temperature information detected by the temperature detector 58, the temperature in the processing chamber 38 is configured to have a desired temperature distribution.
- the temperature detector 58 is provided along the inner wall of the reaction tube 36.
- a seal cap 60 is provided as a furnace port lid capable of airtightly closing the lower end opening of the reaction tube 36.
- An O-ring 60 ⁇ / b> A is provided on the upper surface of the seal cap 60 as a seal member that comes into contact with the lower end of the reaction tube 36.
- a seal cap plate 60B that protects the seal cap 60 is installed on the inner surface of the upper surface of the seal cap 60 from the O-ring 60A. The seal cap 60 is configured to contact the lower end of the reaction tube 36 from the lower side in the vertical direction.
- the boat 40 as a substrate support is configured to support a plurality of wafers W, for example, 25 to 200 wafers W in a horizontal posture and aligned in the vertical direction in a state where the centers are aligned with each other. It is configured to arrange at intervals.
- a rotation mechanism 62 that rotates the boat 40 is installed on the side of the seal cap 60 opposite to the processing chamber 38.
- a rotation shaft 62B of the rotation mechanism 62 is connected to the boat 40 through the seal cap 60.
- the rotation mechanism 62 is configured to rotate the wafer W by rotating the boat 40.
- the transfer chamber 12 includes a purge gas supply mechanism 162 that supplies a purge gas to a duct formed around the transfer chamber 12, and a pressure control mechanism 150 that controls the pressure in the transfer chamber 12.
- the purge gas supply mechanism 162 is configured to supply the purge gas into the duct in accordance with the detection value by the detector 160 that detects the oxygen concentration in the transfer chamber 12.
- the detector 160 is installed above (upstream) a clean unit 166 as a gas supply mechanism that removes dust and impurities and supplies purge gas into the transfer chamber 12.
- the purge gas supply mechanism 162 and the pressure control mechanism 150 can control the oxygen concentration in the transfer chamber 12.
- the detector 160 may be configured to detect the moisture concentration in addition to the oxygen concentration.
- one clean unit 166 is arranged on the left and right on the ceiling of the transfer chamber 12.
- a perforated plate 174 which is a rectifying plate for adjusting the flow of purge gas, is installed immediately below the horizontal movement arm of the transfer device 124.
- the perforated plate 174 has a plurality of holes and is formed of, for example, a punching panel.
- a first space 170 that is a wafer transfer region is formed in a space between the ceiling and the porous plate 174, and a gas exhaust region is formed in a space between the porous plate 174 and the floor of the transfer chamber 12.
- a certain second space 176 is formed.
- suction portions 164 for circulating and exhausting the purge gas that has flowed in the transfer chamber 12 are arranged one by one on the left and right sides of the substrate transfer device 124. ing. Further, a circulation path that connects the pair of left and right suction portions 164 and the pair of left and right filter units 166 and a path 168 as an exhaust path are also formed on the left and right sides of the substrate transfer device 124, respectively.
- a cooling mechanism radiator
- the path 168 is branched into two paths, which are a circulation path 168A and an exhaust path 168B.
- the left and right exhaust passages 168B merge into one exhaust passage 152 on the downstream side.
- the pressure in the pod 100, the pressure in the transfer chamber 12, and the pressure in the preparation chamber 16 are all controlled at a pressure about 10 to 200 Pa (gauge pressure) higher than the atmospheric pressure.
- the pressure in the transfer chamber 12 is preferably higher than the pressure in the preparation chamber 16, and the pressure in the preparation chamber 16 is preferably higher than the pressure in the pod 100.
- the load port unit 106 includes a housing 106A, a stage 106B, and an opener 106C.
- the stage 106 ⁇ / b> B is configured to place the pod 100 and bring the pod 100 close to the substrate loading / unloading port 134 formed in front of the housing of the transfer chamber 12.
- the housing 106A has an opening at a position facing the substrate loading / unloading port 134.
- the opener 106C is installed in a space inside the housing 106A, and is configured to open and close the lid of the pod 100 and to close the opening.
- the opener 106 ⁇ / b> C retreats to a space below the housing 106 ⁇ / b> A while holding the lid of the pod 100.
- a purge gas supply port 106D that supplies a purge gas is formed in the ceiling portion of the housing 106A to perform a local purge in the housing 106A and the pod 100.
- the purge gas purged in the housing 106A and the pod 100 is exhausted out of the housing 106A through an exhaust port 106E formed in the lower portion of the housing 106A.
- the purge gas purged in the load port unit 106 and the pod 100 is not exhausted into the transfer chamber 12 but is exhausted through an exhaust path independent of the exhaust path in the transfer chamber 12.
- a hollow portion in a square pipe forming a frame (column) that is a structure forming the transfer chamber 12 is defined as an exhaust path 168C, and exhausted through the exhaust path 168C. That is, the exhaust port 106 ⁇ / b> E formed in the lower portion of the housing 106 ⁇ / b> A is connected to the hollow portion of the frame constituting the transfer chamber 12.
- the exhaust paths 168C of the plurality of load port units 106 are joined together above the load port unit 106, and are configured to exhaust the purge gas directly to the facility-side exhaust duct. With such a configuration, it is possible to suppress the atmosphere in the load port unit 106 from flowing into the transfer chamber 12, and it is possible to suppress an increase in the oxygen concentration in the transfer chamber 12.
- the pressure control mechanism 150 is configured to be able to control the inside of the transfer chamber 12 to an arbitrary pressure by controlling the opening / closing of the adjustment damper 154 and the exhaust damper 156.
- the pressure control mechanism 150 includes an adjustment damper 154 configured to hold the inside of the transfer chamber 12 at a predetermined pressure, and an exhaust damper 156 configured to fully open or close the exhaust passage 152. . With such a configuration, the pressure in the transfer chamber 12 can be controlled.
- the adjustment damper 154 includes an auto damper (back pressure valve) 151 configured to open when the pressure in the transfer chamber 12 becomes higher than a predetermined pressure, and a press damper 153 configured to control opening and closing of the auto damper 151. Consists of.
- the exhaust damper 156 includes a lid 156A that closes the exhaust path 152, and a drive unit 156B as a first drive unit that is a drive mechanism that drives the lid 156A.
- the lid portion 156A is formed in a box shape whose side surface is open and whose lower surface is closed.
- An opening 156C communicating with the exhaust path 152 is formed on the lower surface of the lid 156A, and the adjustment damper 154 is installed in the lid 156A so as to open and close the opening 156C.
- the press damper 153 is connected to the upper surface of the auto damper 151 and includes a pressing portion 153A for pressing the auto damper 151 and a driving portion 153B as a second driving portion that is a driving mechanism for driving the pressing portion 153A.
- the pressing portion 153A presses the upper surface of the auto damper 151
- the auto damper 151 is forcibly closed.
- opening the press damper 153 means a state in which the auto damper 151 is not pressed by the pressing portion 153A.
- closing the press damper 153 means a state in which the auto damper 151 is pressed by the pressing portion 153A.
- the auto damper 151 is configured by a hinge and a balancer fixed to the hinge in order to maintain the inside of the transfer chamber 12 at a predetermined pressure, and opens and closes the exhaust passage 152 by opening and closing the opening 156C (see FIG. 5). ).
- the auto damper 151 is opened when the pressure on the transfer chamber side (primary side) is larger than a predetermined pressure (pressure in the transfer chamber> predetermined pressure).
- the predetermined pressure can be determined by adjusting the weight of the balancer. For example, the predetermined pressure can be increased by increasing the weight of the balancer, and conversely, the predetermined pressure can be decreased by decreasing the weight of the balancer.
- the auto damper 151 may be formed integrally with the lid portion 156A.
- the exhaust path 152 is connected from the lower surface of the pressure control mechanism 150 and is configured to be exhausted from the side surface of the pressure control mechanism 150.
- a hinge is formed at one end of the opening 156C on the side opposite to the side where the pressure control mechanism 150 performs exhaust, and the auto damper 151 opens and closes toward the side where the pressure control mechanism 150 performs exhaust. To do. With such a configuration, the exhaust can be performed smoothly without forming air stagnation in the pressure control mechanism 150.
- the exhaust damper 156 is configured so that the adjustment damper 154 can be driven integrally with the lid portion 156A.
- the exhaust passage 152 can be fully opened (fully opened) or fully closed (fully closed). That is, the exhaust path 152 can be fully opened or fully closed by pressing the auto damper 151 with the pressing portion 153A and driving the lid portion 156A with the opening 156C closed.
- the pressure in the transfer chamber 12 can be controlled, and the hydrogen concentration and oxygen concentration in the transfer chamber 12 can be controlled. Is possible.
- N 2 gas which is an inert gas as a purge gas whose flow rate is controlled is introduced into the transfer chamber 12 from the purge gas supply mechanism 162.
- N 2 gas is supplied into the transfer chamber 12 from the ceiling of the transfer chamber 12 via the clean unit 166, and forms a downflow 172 in the transfer chamber 12.
- a porous plate 174 is provided in the transfer chamber 12, and the space in the transfer chamber 12 is divided into a first space 170 and a second space 176, so that the first space 170 and the second space 176 are separated.
- a differential pressure can be formed. At this time, the pressure between the first spaces 170 is higher than the pressure in the second space 176.
- the N 2 gas sucked out of the transfer chamber 12 by the suction unit 164 is divided into two flow paths, a circulation path 168 and an exhaust path 152, downstream of the suction part 164.
- the circulation path 168 is a path that is connected to the upstream side of the clean unit 166 and supplies the purge gas again into the transfer chamber 12.
- the exhaust path 152 is a flow path that is connected to the pressure control mechanism 150 and exhausts N 2 gas.
- a fan 178 as a blower that promotes circulation of N 2 gas may be installed in the left and right suction portions 164. By installing the fan 178, it is possible to improve the flow of N 2 gas and to easily form a circulating air flow.
- a pressure control mechanism 150 is installed on the downstream side of the exhaust path 152. In this way, a uniform air flow can be formed in the transfer chamber 12 by performing circulation and exhaust in two left and right systems.
- the adjustment damper 154 and the exhaust damper 156 are closed and the purge gas supply mechanism 162 supplies the N 2 gas. . That is, the auto damper 151, the press damper 153, and the exhaust damper 156 are closed. By controlling in this way, the oxygen concentration in the transfer chamber 12 is forcibly reduced.
- the adjustment damper 154 is opened, that is, the auto damper 151 and the press damper 153 are opened (see FIG. 5B).
- a predetermined oxygen concentration is maintained while suppressing an increase in pressure in the transfer chamber 12.
- the adjustment damper 153 When circulating the N 2 gas in the transfer chamber 12, the adjustment damper 153 is opened and the exhaust damper 156 is closed. That is, the auto damper 151 and the press damper 153 are opened, and the exhaust damper 156 is closed. Further, the pressure in the transfer chamber 12 is set so that the pressure in the transfer chamber 12 is equal to or higher than the pressure in the load port unit 106 and the pressure in the load port unit 106 is higher than the pressure of the pod 100. Control. More preferably, the pressure in the transfer chamber 12 is controlled so that the pressure in the transfer chamber 12 is higher than the pressure in the load port unit 106.
- the pressure in the transfer chamber 12 can be made higher than the pressure in the pod 100 or the load port unit 106, and the atmosphere in the pod 100 or the load port unit 106 is changed in the transfer chamber 12. Can be prevented from diffusing. As a result, it is possible to reduce the amount of oxygen or moisture that diffuses from the pod 100 or the load port unit 106 into the transfer chamber 12.
- the intake damper 158 provided at the upper part of the casing 180 of the transfer chamber 12 is opened, and the atmosphere is taken into the transfer chamber 12 from the outside of the casing.
- the adjustment damper 154 is closed, that is, the auto damper 151 and the press damper 153 are closed and the exhaust damper 156 is opened. That is, the exhaust passage 152 is fully opened.
- the gate valve 128 is controlled so that it cannot be opened or closed unless the pressure in the transfer chamber 12 and the pressure in the preparation chamber 16 satisfy specified conditions.
- the specified condition is that the pressure in the transfer chamber 12 is equal to or higher than the pressure in the preparation chamber 16.
- the pressure in the transfer chamber 12 is preferably 50 to 300 Pa, and the pressure in the PM is preferably 40 to 300 Pa.
- the pressure in the transfer chamber 12 is about 20 Pa higher than the pressure in the preparation chamber 16. That is, the pressure in the transfer chamber 12 is preferably 1 to 7.5 times the pressure in the preparation chamber 16.
- the atmosphere in the preparation chamber 16 flows into the transfer chamber 12, thereby contaminating the transfer chamber 12 from the preparation chamber 16. There is a fear. If the pressure in the transfer chamber 12 is too high than the pressure in the preparation chamber 16 (if the pressure in the transfer chamber 12 is higher than 7.5 times the pressure in the preparation chamber 16), There is a possibility that the atmosphere is rolled up and particles in the transport unit 12 are mixed into the preparation chamber 16. By setting the pressure in the transfer chamber 12 to 50 to 300 Pa (gauge pressure) and the pressure in the PM to 40 to 300 Pa (gauge pressure) (the pressure in the transfer chamber 12 is one time the pressure in the preparation chamber 16).
- the gate valve 128 is controlled not to open.
- the press damper 153 is closed when the exhaust passage 152 is fully closed or fully opened, and when the atmosphere in the transfer chamber 12 is replaced. In this case, the gate valve 128 should not be opened. preferable.
- the opening and closing of the gate valve 128 may be controlled using not the pressure value but the oxygen concentration as a threshold value.
- the gate valve 128 may be controlled to be opened when the oxygen concentration in the preparation chamber 16 is lower than a threshold value.
- the oxygen concentration threshold in the preparation chamber 16 is set to the oxygen concentration in the transfer chamber 12. That is, control is performed so that the gate valve 128 can be opened when the oxygen concentration in the preparation chamber 16 is lower than the oxygen concentration in the transfer chamber 12.
- the opening / closing state of the auto damper 151 can be adjusted.
- the opening degree of the exhaust path 152 can be adjusted arbitrarily, and the pressure in the transfer chamber 12 can be set arbitrarily. That is, it is possible to arbitrarily control the pressure in the transfer chamber 12 by setting the pressing amount of the driving unit 153B to several positions.
- the controller 210 that is a control unit (control means) is configured as a computer including a CPU (Central Processing Unit) 212, a RAM (Random Access Access Memory) 214, a storage device 216, and an I / O port 218.
- the RAM 214, the storage device 216, and the I / O port 218 are configured to exchange data with the CPU 212 via the internal bus 220.
- an input / output device 222 configured as a touch panel or the like is connected to the controller 210.
- the storage device 216 is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner.
- the process recipe is a combination of processes so that a predetermined result can be obtained by causing the controller 210 to execute each procedure in the substrate processing process described later, and functions as a program.
- the process recipe, the control program, and the like are collectively referred to simply as a program.
- program When the term “program” is used in this specification, it may include only a process recipe alone, only a control program alone, or both.
- the RAM 214 is configured as a memory area (work area) in which programs, data, and the like read by the CPU 212 are temporarily stored.
- the I / O port 218 includes the above-described MFCs 46a and 46b, valves 48a and 48b, pressure sensor 52, APC valve 54, pressure control mechanism 150, detector 160, transfer machine 124, fan 178, purge gas supply mechanism 162, and gate valve. 128 or the like.
- the CPU 212 is configured to read and execute a control program from the storage device 216 and to read a process recipe from the storage device 216 in response to an input of an operation command from the input / output device 222 or the like.
- the CPU 212 adjusts the flow rates of various gases by the MFCs 46 a and 46 b, the opening and closing operations of the valves 48 a and 48 b, the opening and closing operations of the APC valve 54, and the pressure by the APC valve 54 based on the pressure sensor 52 in accordance with the contents of the read process recipe.
- the controller 210 is stored in an external storage device 224 (for example, a magnetic disk, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card).
- the above-mentioned program can be configured by installing it in a computer.
- the storage device 216 and the external storage device 224 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
- recording medium When the term “recording medium” is used in this specification, it may include only the storage device 216, only the external storage device 224, or both.
- the provision of the program to the computer may be performed using communication means such as the Internet or a dedicated line without using the external storage device 224.
- a sequence example of a process for forming a film on a substrate (hereinafter also referred to as a film forming process) will be described as one step of a semiconductor device (device) manufacturing process using the substrate processing apparatus 4 described above.
- HCDS hexachlorodisilane
- NH 2 ammonia
- SiN film silicon nitride film
- the operation of each part constituting the substrate processing apparatus 4 is controlled by the controller 210.
- a step of supplying HCDS gas to the wafer W in the processing chamber 38, a step of removing HCDS gas (residual gas) from the processing chamber 38, and a wafer in the processing chamber 38 The wafer W is subjected to a predetermined number of times (one or more times) in which the process of supplying NH 3 gas to W and the process of removing NH 3 gas (residual gas) from the processing chamber 38 are performed simultaneously.
- a SiN film is formed thereon.
- the processing chamber 38 is evacuated (reduced pressure) by the vacuum pump 56 so that the inside of the processing chamber 38 has a predetermined pressure. At this time, the pressure in the processing chamber 38 is measured by the pressure sensor 52, and the APC valve 54 is feedback-controlled based on the measured pressure information.
- the vacuum pump 56 maintains a state in which it is always operated at least until the processing on the wafer W is completed.
- the wafer W in the processing chamber 38 is heated by the heater 34 so as to reach a predetermined temperature.
- the power supply to the heater 34 is feedback-controlled based on the temperature information detected by the temperature detector 58 so that the processing chamber 38 has a predetermined temperature distribution. Heating of the processing chamber 38 by the heater 34 is continuously performed at least until the processing on the wafer W is completed.
- the rotation of the boat 40 and the wafer W by the rotation mechanism 62 is started.
- the rotation of the boat 40 and the wafer W by the rotation mechanism 62 is continuously performed at least until the processing on the wafer W is completed.
- Steps 1 and 2 are sequentially executed.
- Step 1 In this step, HCDS gas is supplied to the wafer W in the processing chamber 38.
- the valve 48a is opened and HCDS gas is allowed to flow into the gas supply pipe 44a.
- the flow rate of the HCDS gas is adjusted by the MFC 46 a, supplied into the processing chamber 38 through the nozzle 42, and exhausted from the exhaust pipe 50.
- the HCDS gas is supplied to the wafer W.
- the valve 48b is simultaneously opened, and N 2 gas is allowed to flow into the gas supply pipe 44b.
- the flow rate of the N 2 gas is adjusted by the MFC 46 b, supplied into the processing chamber 38 together with the HCDS gas, and exhausted from the exhaust pipe 50.
- the valve 48a is closed and the supply of HCDS gas is stopped.
- the inside of the processing chamber 38 is evacuated by the vacuum pump 56, and the HCDS gas remaining in the processing chamber 38 or contributing to the formation of the first layer is processed. Drain from the chamber 38.
- the supply of N 2 gas into the processing chamber 38 is maintained with the valve 48b kept open.
- the N 2 gas acts as a purge gas, whereby the effect of exhausting the gas remaining in the processing chamber 38 from the processing chamber 38 can be enhanced.
- the gas remaining in the processing chamber 38 may not be completely discharged, and the processing chamber 38 may not be completely purged. If the amount of gas remaining in the processing chamber 38 is very small, no adverse effect will occur in the subsequent step 2.
- the flow rate of the N 2 gas supplied into the processing chamber 38 does not need to be a large flow rate. For example, by supplying an amount of N 2 gas equivalent to the volume of the reaction tube 36 (processing chamber 38), step 2 is performed. Purging can be performed to such an extent that no adverse effect is caused. Thus, by not completely purging the inside of the processing chamber 38, the purge time can be shortened and the throughput can be improved. The consumption of N 2 gas can be suppressed to the minimum necessary.
- Step 2 After step 1 is completed, NH 3 gas is supplied to the wafer W in the processing chamber 38, that is, the first layer formed on the wafer W.
- the NH 3 gas is activated by heat and supplied to the wafer W.
- the opening / closing control of the valves 48a, 28b is performed in the same procedure as the opening / closing control of the valves 48a, 28b in step 1.
- the flow rate of the NH 3 gas is adjusted by the MFC 28 a, supplied into the processing chamber 38 through the nozzle 42, and exhausted from the exhaust pipe 50.
- NH 3 gas is supplied to the wafer W.
- the NH 3 gas supplied to the wafer W reacts with at least a part of the first layer formed on the wafer W in Step 1, that is, the Si-containing layer.
- the first layer is thermally nitrided by non-plasma and is changed (modified) into a second layer containing Si and N, that is, a silicon nitride layer (SiN layer).
- a second layer containing Si and N that is, a silicon nitride layer (SiN layer).
- plasma-excited NH 3 gas is supplied to the wafer W, and the first layer is plasma-nitrided to change the first layer to the second layer (SiN layer). May be.
- the valve 48a is closed and the supply of NH 3 gas is stopped. Then, the NH 3 gas and the reaction by-product remaining in the processing chamber 38 and contributed to the formation of the second layer are discharged from the processing chamber 38 by the same processing procedure as in Step 1. At this time, it is the same as in step 1 that the gas remaining in the processing chamber 38 does not have to be completely discharged.
- a SiN film having a predetermined composition and a predetermined film thickness can be formed on the wafer W by performing the above-described two steps non-simultaneously, that is, by performing a cycle (n times) without synchronizing them.
- the above cycle is preferably repeated a plurality of times.
- processing conditions when performing the film forming process for example, Processing temperature (wafer temperature): 250 to 700 ° C. Processing pressure (processing chamber pressure): 1 to 4000 Pa, HCDS gas supply flow rate: 1 to 2000 sccm, NH 3 gas supply flow rate: 100-10000 sccm, N 2 gas supply flow rate: 100 to 10,000 sccm, Is exemplified.
- Processing temperature wafer temperature
- Processing pressure processing chamber pressure
- HCDS gas supply flow rate 1 to 2000 sccm
- NH 3 gas supply flow rate 100-10000 sccm
- N 2 gas supply flow rate 100 to 10,000 sccm
- Is exemplified Is exemplified.
- N 2 gas acts as a purge gas.
- the inside of the processing chamber 38 is purged, and the gas and reaction byproducts remaining in the processing chamber 38 are removed from the processing chamber 38 (purge).
- the atmosphere in the processing chamber 38 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 38 is returned to normal pressure (return to atmospheric pressure).
- HCDS gas in addition to HCDS gas, monochlorosilane (SiH 3 Cl, abbreviation: MCS) gas, dichlorosilane (Si hydrogen Cl 2 , abbreviation: DCS) gas, trichlorosilane (SiHCl 3 , abbreviation: TCS) gas
- MCS monochlorosilane
- DCS dichlorosilane
- TCS trichlorosilane
- Inorganic halosilane source gases such as tetrachlorosilane, that is, silicon tetrachloride (SiCl 4 , abbreviation: STC) gas, octachlorotrisilane (Si 3 Cl 8 , abbreviation: OCTS) gas, and trisdimethylaminosilane (Si [N (CH 3 ) 2 ] 3 H, abbreviation: 3DMAS) gas, tetrakisd
- the source gas contains no halogen group such as monosilane (SiH 4 , abbreviation: MS) gas, disilane (Si 2 H 6 , abbreviation: DS) gas, trisilane (Si 3 H 8 , abbreviation: TS) gas, etc.
- An inorganic silane source gas can be used.
- a hydrogen nitride-based gas such as a diazene (N 2 hydrogen) gas, a hydrazine (N 2 H 4 ) gas, and an N 3 H 8 gas in addition to NH 3 gas, a gas containing these compounds, etc.
- a hydrogen nitride-based gas such as a diazene (N 2 hydrogen) gas, a hydrazine (N 2 H 4 ) gas, and an N 3 H 8 gas in addition to NH 3 gas, a gas containing these compounds, etc.
- MEA gas such as ethylamine gas, trimethylamine ((CH 3 ) 3 N, abbreviation: TMA) gas, dimethylamine ((CH 3 ) 2 NH, abbreviation: DMA) gas, monomethylamine (CH 3 N)
- a methylamine gas such as hydrogen (abbreviation: MMA) gas or the like can be used.
- an organic hydrazine-based gas such as trimethylhydrazine ((CH 3 ) 2 N 2 (CH 3 ) H, abbreviation: TMH) gas can be used.
- the present invention is not limited to such an embodiment.
- a SiO film, a SiON film, a SiOCN film, a SiOC film, a SiCN film, a SiBN film, a SiBCN film, or the like can be formed. Even in the case where these films are formed, the film formation can be performed under the same processing conditions as in the above-described embodiment, and the same effect as in the above-described embodiment can be obtained.
- a silicon-based insulating film such as a SiN film is formed.
- the present invention is not limited to such an embodiment.
- titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W) are formed on the wafer W. Even when a film containing a metal element such as a metal film is formed, the present invention can be suitably applied.
- a film in which any of these elements is doped (added) with other elements for example, a TiAlN film, a TaAlN film, a TiAlC film, a TaAlC film, a TiSiN film, a TiSiC film, etc. is also suitably applied. Is possible.
- the present invention is not limited to such an embodiment.
- the present invention can also be suitably applied to a case where a process such as an oxidation process, a diffusion process, an annealing process, or an etching process is performed on the wafer W or a film formed on the wafer W.
- processing conditions at this time can be set to the same processing conditions as in the above-described embodiment or modification, for example.
- Substrate Processing Device 12 Transfer Chamber 124 Substrate Transfer Machine 128 Gate Valve 150 Pressure Control Mechanism 162 Purge Gas Supply Mechanism 166 Filter unit 178 Circulation fan 210 Controller
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Robotics (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
基板を収容する収納容器から前記基板を搬送する搬送室と、
前記搬送室内にパージガスを供給するパージガス供給機構と、
前記搬送室内の雰囲気を排気する排気路に設置され、前記搬送室内の圧力を制御する圧力制御機構と、を備え、
前記圧力制御機構は、
前記排気路を全開または全閉する排気ダンパと、
前記排気ダンパ内に設置され、前記搬送室内を所定の圧力に保持する調整ダンパと、
を有する技術が提供される。
図1に示すように、本実施形態において、基板処理装置4は、ICの製造方法における熱処理工程を実施する縦型熱処理装置(バッチ式縦型熱処理装置)として構成されている。なお、本発明が適用される縦型熱処理装置では、基板としてのウエハWを内部に収容した収納容器であるキャリアとしてFOUP(Front Opening Unified Pod:以下、ポッドという。)100が使用されている。ポッド100は、ウエハWを基板処理装置間で搬送するための搬送容器としても用いられる。また、以下の説明において、前後左右は図2を基準とする。すなわち、図2に示されているX1の方向を右、X2の方向を左、Y1の方向を前、Y2の方向を後ろとする。基板処理装置4は後述する処理炉8、第1搬送室12、第2搬送室16を備える。
基板処理装置4の筐体内前側には、ウエハWを搬送する空間を形成する搬送室としての第1搬送室12(以下、搬送室12と称する)が配置されている。搬送室12の筐体前側には、ポッド100の蓋を開閉し、ウエハWを搬送室12に対して搬入出するための、ポッド開閉機構としてのロードポートユニット106が配置されている。ロードポートユニット106の構成については後述する。
搬送室12の後方には、ボート40が昇降する空間を形成する準備室としての第2搬送室16(以下、準備室16と称する)が配置されている。準備室16の天井部には、後述する反応管36と連通する連通口が形成されている。準備室16の側壁には、後述するシールキャップ60を垂直方向に昇降させる昇降機構(搬送機構)としてのボートエレベータ46が設置されている。ボートエレベータ46は、シールキャップ60を昇降させることで、後述するボート40を反応管36内外に搬入出することが可能なように構成されている。準備室16は、パージガスを循環させることができ、また、準備室16内に設置された酸素濃度検出器によって酸素濃度を検知することができ、準備室16内の酸素濃度を制御可能に構成されている。
準備室16の上方には処理炉8が設けられている。図3に示すように、処理炉8は加熱手段(加熱機構)としてのヒータ34を有する。ヒータ34は円筒形状であり、保持板としてのヒータベース(図示せず)に支持されることにより垂直に据え付けられている。ヒータ34は、後述するようにガスを熱で活性化(励起)させる活性化機構(励起部)としても機能する。
複数枚のウエハWがボート40に装填(ウエハチャージ)されると、ボート40は、ボートエレベータ46によって処理室38内に搬入(ボートロード)される。このとき、シールキャップ60は、Oリング60Aを介して反応管36の下端を気密に閉塞した状態となる。
処理室38内が所定の圧力となるように、真空ポンプ56によって真空排気(減圧排気)される。この際、処理室38内の圧力は、圧力センサ52で測定され、この測定された圧力情報に基づきAPCバルブ54が、フィードバック制御される。真空ポンプ56は、少なくともウエハWに対する処理が終了するまでの間は常時作動させた状態を維持する。
処理室38内の温度が予め設定された処理温度に安定すると、ステップ1~2を順次実行する。
このステップでは、処理室38内のウエハWに対し、HCDSガスを供給する。
ステップ1が終了した後、処理室38内のウエハW、すなわち、ウエハW上に形成された第1の層に対してNH3ガスを供給する。NH3ガスは熱で活性化されてウエハWに対して供給されることとなる。
上述した2つのステップを非同時に、すなわち、同期させることなく行うサイクルを所定回数(n回)行うことにより、ウエハW上に、所定組成および所定膜厚のSiN膜を形成することができる。なお、上述のサイクルは複数回繰り返すのが好ましい。
処理温度(ウエハ温度):250~700℃、
処理圧力(処理室内圧力):1~4000Pa、
HCDSガス供給流量:1~2000sccm、
NH3ガス供給流量:100~10000sccm、
N2ガス供給流量:100~10000sccm、
が例示される。それぞれの処理条件を、それぞれの範囲内のある値に設定することで、成膜処理を適正に進行させることが可能となる。
成膜処理が完了した後、バルブ48bを開き、ガス供給管44bからN2ガスを処理室38内へ供給し、排気管50から排気する。N2ガスはパージガスとして作用する。これにより、処理室38内がパージされ、処理室38内に残留するガスや反応副生成物が処理室38内から除去される(パージ)。その後、処理室38内の雰囲気が不活性ガスに置換され(不活性ガス置換)、処理室38内の圧力が常圧に復帰される(大気圧復帰)。
ボートエレベータ46によりシールキャップ60が下降され、反応管36の下端が開口される。そして、処理済のウエハWが、ボート40に支持された状態で、反応管36の下端から反応管36の外部に搬出される(ボートアンロード)。処理済のウエハWは、ボート40より取出される(ウエハディスチャージ)。
本実施形態によれば、以下に示す1つ又は複数の効果が得られる。
(2)搬送室内の酸素濃度および水分濃度を素早く低減し、成膜処理が開始するまでの待ち時間を短縮することができ、生産性を向上させることが可能となる。
12 搬送室
124 基板移載機
128 ゲートバルブ
150 圧力制御機構
162 パージガス供給機構
166 フィルタユニット
178 循環ファン
210 コントローラ
Claims (16)
- 基板を収容する収納容器から前記基板を搬送する搬送室と、
前記搬送室内にパージガスを供給するパージガス供給機構と、
前記搬送室内の雰囲気を排気する排気路に設置され、前記搬送室内の圧力を制御する圧力制御機構と、を備え、
前記圧力制御機構は、
前記排気路を全開または全閉する排気ダンパと、
前記排気ダンパ内に設置され、前記搬送室内を所定の圧力に保持する調整ダンパと、
を有する基板処理装置。 - 前記収納容器の蓋を開閉するロードポートユニットをさらに有し、
前記搬送室内の圧力が、前記ロードポートユニットの筐体内の圧力および前記収納容器内の圧力以上で、かつ、前記ロードポートユニットの筐体内の圧力が前記収納容器内の圧力よりも高くなるように前記圧力制御機構と前記パージガス供給機構とを制御するよう構成された制御部をさらに有する請求項1に記載の基板処理装置。 - 前記排気ダンパは、
前記排気路を閉塞する蓋部と、
前記蓋部を駆動する駆動部と、を有し、
前記調整ダンパは前記蓋部に形成される請求項2に記載の基板処理装置。 - 前記調整ダンパは、
前記搬送室内の圧力が前記所定の圧力より高い時に前記排気路を開くよう構成された背圧弁と、
前記背圧弁を押圧し、強制的に閉じるよう構成されたプレスダンパと、を備える請求項3に記載の基板処理装置。 - 前記蓋部には前記排気路と連通する開口部が形成され、前記背圧弁は前記開口部を開閉することにより前記排気路を開閉するように構成される請求項4に記載の基板処理装置。
- 前記所定の圧力は、前記背圧弁の重量を調整することにより設定される請求項5に記載の基板処理装置。
- 前記搬送室に隣接し、前記基板を基板保持具に載置する準備室と、
前記搬送室と前記準備室との間に設置されたゲートバルブと、をさらに有し、
前記制御部は、前記排気ダンパが閉の時、前記ゲートバルブを開とするように前記ゲートバルブを制御するよう構成される請求項6に記載の基板処理装置。 - 前記制御部は、前記背圧弁が開の時、前記ゲートバルブを開とするように前記ゲートバルブを制御するよう構成される請求項7に記載の基板処理装置。
- 付記6に記載の装置であって、好ましくは、
前記制御部は、前記準備室内の圧力が前記搬送室内の圧力よりも高い時、前記ゲートバルブを開とするように前記ゲートバルブを制御するよう構成される請求項8に記載の基板処理装置。 - 前記制御部は、前記調整ダンパが閉の時、前記ゲートバルブを閉とするように前記ゲートバルブを制御するよう構成される請求項9に記載の基板処理装置。
- 前記搬送室の下部であって、前記移載機を挟んだ左右に設置され、前記搬送室内の雰囲気を排気する一対の吸出部をさらに備える請求項10に記載の基板処理装置。
- 前記搬送室の天井に設置された一対のフィルタユニットと、
前記一対の吸出部と前記一対のフィルタユニットとをそれぞれ繋ぐ循環路と、を備え、
前記一対の吸出部はそれぞれ前記排気路と前記循環路との2つの流路に分岐し、それぞれの前記排気路は下流側で合流するよう構成される請求項11に記載の基板処理装置。 - 付記10に記載の装置であって、好ましくは、
前記フィルタユニットの上流側に設置され、前記搬送室内の酸素濃度を検出する検出器をさらに有する請求項12に記載の基板処理装置。 - 前記制御部は、前記準備室の酸素濃度が前記搬送室の酸素濃度よりも低い時に前記ゲートバルブを開とするように前記ゲートバルブを制御するよう構成される請求項13に記載の基板処理装置。
- 搬送室内の雰囲気を排気する排気路に設置され、前記排気路を全開または全閉する排気ダンパと、前記排気ダンパ内に設置され、前記搬送室内を所定の圧力に保持する調整ダンパとで構成された圧力制御機構によって前記搬送室内の圧力を制御する工程と、
前記搬送室内で、基板を収容する収納容器内の前記基板を搬送する工程と、
前記基板を処理室内に搬入する工程と、
前記処理室内で前記基板を処理する工程と、
を有する半導体装置の製造方法。 - 搬送室内の雰囲気を排気する排気路に設置され、前記排気路を全開または全閉する排気ダンパと、前記排気ダンパ内に設置され、前記搬送室内を所定の圧力に調整する調整ダンパとで構成された圧力制御機構によって前記搬送室内の圧力を制御する手順と、
前記搬送室内で、基板を収容する収納容器内の前記基板を搬送する手順と、
前記基板を処理室内に搬入する手順と、
前記処理室内で前記基板を処理する手順と、
をコンピュータによって基板処理装置に実行させるプログラムを記録したコンピュータ読み取り可能な記録媒体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017532428A JP6606551B2 (ja) | 2015-08-04 | 2016-06-28 | 基板処理装置、半導体装置の製造方法および記録媒体 |
SG11201800143RA SG11201800143RA (en) | 2015-08-04 | 2016-06-28 | Substrate processing device, semiconductor device manufacturing method, and recording medium |
CN201680044904.1A CN107851597B (zh) | 2015-08-04 | 2016-06-28 | 基板处理装置、半导体装置的制造方法及记录介质 |
KR1020187001271A KR101998578B1 (ko) | 2015-08-04 | 2016-06-28 | 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 |
TW105124069A TWI644380B (zh) | 2015-08-04 | 2016-07-29 | Substrate processing apparatus, manufacturing method of semiconductor device, and recording medium |
US15/880,245 US20180148834A1 (en) | 2015-08-04 | 2018-01-25 | Substrate processing apparatus and method of manufacturing semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-154392 | 2015-08-04 | ||
JP2015154392 | 2015-08-04 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/880,245 Continuation US20180148834A1 (en) | 2015-08-04 | 2018-01-25 | Substrate processing apparatus and method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017022366A1 true WO2017022366A1 (ja) | 2017-02-09 |
Family
ID=57942810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/069123 WO2017022366A1 (ja) | 2015-08-04 | 2016-06-28 | 基板処理装置、半導体装置の製造方法および記録媒体 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20180148834A1 (ja) |
JP (1) | JP6606551B2 (ja) |
KR (1) | KR101998578B1 (ja) |
CN (1) | CN107851597B (ja) |
SG (1) | SG11201800143RA (ja) |
TW (1) | TWI644380B (ja) |
WO (1) | WO2017022366A1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018167846A1 (ja) * | 2017-03-14 | 2018-09-20 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
JP2018160544A (ja) * | 2017-03-22 | 2018-10-11 | Tdk株式会社 | Efem及びefemのガス置換方法 |
JP2018174259A (ja) * | 2017-03-31 | 2018-11-08 | シンフォニアテクノロジー株式会社 | ロボット搬送装置 |
WO2019180966A1 (ja) * | 2018-03-23 | 2019-09-26 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP2020017576A (ja) * | 2018-07-23 | 2020-01-30 | Tdk株式会社 | 循環式efem |
JPWO2021156934A1 (ja) * | 2020-02-04 | 2021-08-12 | ||
JP2022505473A (ja) * | 2018-10-26 | 2022-01-14 | アプライド マテリアルズ インコーポレイテッド | 前面ダクト式機器フロントエンドモジュール、側面ストレージポッド、及びそれらの操作方法 |
KR20230045553A (ko) | 2021-09-28 | 2023-04-04 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법, 기판 처리 방법 및 프로그램 |
JP7375069B2 (ja) | 2022-03-07 | 2023-11-07 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7142494B2 (ja) * | 2018-06-25 | 2022-09-27 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
US10854442B2 (en) * | 2018-06-29 | 2020-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Orientation chamber of substrate processing system with purging function |
JP6876020B2 (ja) * | 2018-07-27 | 2021-05-26 | 株式会社Kokusai Electric | 基板処理装置および半導体装置の製造方法並びにプログラム |
JP7234527B2 (ja) * | 2018-07-30 | 2023-03-08 | Tdk株式会社 | センサー内蔵フィルタ構造体及びウエハ収容容器 |
JP7187890B2 (ja) * | 2018-08-24 | 2022-12-13 | 東京エレクトロン株式会社 | 基板搬送モジュール及び基板搬送方法 |
JP7149144B2 (ja) * | 2018-09-25 | 2022-10-06 | 東京エレクトロン株式会社 | 真空処理装置及び真空処理装置の制御方法 |
CN111354665B (zh) * | 2018-12-20 | 2023-05-02 | 夏泰鑫半导体(青岛)有限公司 | 晶圆存储装置及半导体加工设备 |
JP6906559B2 (ja) * | 2019-03-14 | 2021-07-21 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP6900412B2 (ja) | 2019-03-20 | 2021-07-07 | 株式会社Kokusai Electric | 基板処理装置及び半導体装置の製造方法及びプログラム |
WO2020194434A1 (ja) * | 2019-03-25 | 2020-10-01 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
TW202324639A (zh) * | 2019-05-28 | 2023-06-16 | 日商國際電氣股份有限公司 | 半導體裝置的製造方法,基板處理裝置及程式 |
FI4013905T3 (fi) | 2019-08-12 | 2023-05-19 | Kurt J Lesker Company | Erittäin puhtaat olosuhteet atomimittakaavan prosessointiin |
KR102208017B1 (ko) * | 2019-08-14 | 2021-01-27 | 로체 시스템즈(주) | 기판 반송 장치 |
US11854851B2 (en) * | 2021-03-05 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interface tool |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06302679A (ja) * | 1993-04-13 | 1994-10-28 | Tokyo Electron Ltd | 被処理物搬送ボックス及び処理装置 |
JP2001070781A (ja) * | 1999-09-09 | 2001-03-21 | Ebara Corp | 真空処理装置 |
JP2003272846A (ja) * | 2002-03-20 | 2003-09-26 | Seiko Epson Corp | チャンバ装置の運転方法、チャンバ装置、これを備えた電気光学装置および有機el装置 |
WO2005124853A1 (ja) * | 2004-06-21 | 2005-12-29 | Right Mfg,Co.,Ltd. | ロードポート |
WO2006006377A1 (ja) * | 2004-07-13 | 2006-01-19 | Hitachi Kokusai Electric Inc. | 基板処理装置および半導体装置の製造方法 |
JP2010129808A (ja) * | 2008-11-28 | 2010-06-10 | Dainippon Screen Mfg Co Ltd | 基板処理システムおよび基板処理方法 |
JP2011049507A (ja) * | 2009-08-29 | 2011-03-10 | Tokyo Electron Ltd | ロードロック装置及び処理システム |
JP2014526025A (ja) * | 2011-08-11 | 2014-10-02 | フィッシャー コントロールズ インターナショナル リミテッド ライアビリティー カンパニー | 複数の流体流動制御部材を有する流体弁 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3371230B2 (ja) * | 1992-11-09 | 2003-01-27 | 東京エレクトロン株式会社 | 搬送処理装置 |
KR100221983B1 (ko) * | 1993-04-13 | 1999-09-15 | 히가시 데쓰로 | 처리장치 |
JP3239977B2 (ja) * | 1994-05-12 | 2001-12-17 | 株式会社日立国際電気 | 半導体製造装置 |
JP2000232071A (ja) * | 1999-02-09 | 2000-08-22 | Kokusai Electric Co Ltd | 基板処理方法および基板処理装置 |
US6364762B1 (en) * | 1999-09-30 | 2002-04-02 | Lam Research Corporation | Wafer atmospheric transport module having a controlled mini-environment |
JP4374133B2 (ja) | 2000-12-05 | 2009-12-02 | 株式会社日立国際電気 | 基板処理装置および基板処理方法 |
US7681590B2 (en) * | 2005-12-08 | 2010-03-23 | United Microelectronics Corp. | Process apparatus and transportation system thereof |
JP5048352B2 (ja) * | 2007-01-31 | 2012-10-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
US8443484B2 (en) * | 2007-08-14 | 2013-05-21 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
JP2010043655A (ja) | 2008-08-08 | 2010-02-25 | Sharp Corp | 半導体素子製造用の圧力制御弁およびこれを備える半導体素子製造装置 |
JP2010177357A (ja) * | 2009-01-28 | 2010-08-12 | Hitachi High-Technologies Corp | 真空処理装置および真空処理方法 |
JP5562188B2 (ja) * | 2010-09-16 | 2014-07-30 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP2012204645A (ja) * | 2011-03-25 | 2012-10-22 | Tokyo Electron Ltd | 蓋体開閉装置 |
JP5779957B2 (ja) * | 2011-04-20 | 2015-09-16 | 東京エレクトロン株式会社 | ローディングユニット及び処理システム |
JP2012253198A (ja) * | 2011-06-03 | 2012-12-20 | Hitachi Kokusai Electric Inc | 開閉ダンパー装置 |
KR101632043B1 (ko) * | 2011-12-27 | 2016-06-20 | 샤프 가부시키가이샤 | 로드록 장치 및 이를 구비한 진공처리장치 |
JP5527624B2 (ja) * | 2012-01-05 | 2014-06-18 | 株式会社ダイフク | 保管棚用の不活性ガス注入装置 |
JP6061545B2 (ja) * | 2012-08-10 | 2017-01-18 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
-
2016
- 2016-06-28 SG SG11201800143RA patent/SG11201800143RA/en unknown
- 2016-06-28 WO PCT/JP2016/069123 patent/WO2017022366A1/ja active Application Filing
- 2016-06-28 CN CN201680044904.1A patent/CN107851597B/zh active Active
- 2016-06-28 KR KR1020187001271A patent/KR101998578B1/ko active IP Right Grant
- 2016-06-28 JP JP2017532428A patent/JP6606551B2/ja active Active
- 2016-07-29 TW TW105124069A patent/TWI644380B/zh active
-
2018
- 2018-01-25 US US15/880,245 patent/US20180148834A1/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06302679A (ja) * | 1993-04-13 | 1994-10-28 | Tokyo Electron Ltd | 被処理物搬送ボックス及び処理装置 |
JP2001070781A (ja) * | 1999-09-09 | 2001-03-21 | Ebara Corp | 真空処理装置 |
JP2003272846A (ja) * | 2002-03-20 | 2003-09-26 | Seiko Epson Corp | チャンバ装置の運転方法、チャンバ装置、これを備えた電気光学装置および有機el装置 |
WO2005124853A1 (ja) * | 2004-06-21 | 2005-12-29 | Right Mfg,Co.,Ltd. | ロードポート |
WO2006006377A1 (ja) * | 2004-07-13 | 2006-01-19 | Hitachi Kokusai Electric Inc. | 基板処理装置および半導体装置の製造方法 |
JP2010129808A (ja) * | 2008-11-28 | 2010-06-10 | Dainippon Screen Mfg Co Ltd | 基板処理システムおよび基板処理方法 |
JP2011049507A (ja) * | 2009-08-29 | 2011-03-10 | Tokyo Electron Ltd | ロードロック装置及び処理システム |
JP2014526025A (ja) * | 2011-08-11 | 2014-10-02 | フィッシャー コントロールズ インターナショナル リミテッド ライアビリティー カンパニー | 複数の流体流動制御部材を有する流体弁 |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11018033B2 (en) | 2017-03-14 | 2021-05-25 | Kokusai Electric Corporation | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium |
TWI668764B (zh) * | 2017-03-14 | 2019-08-11 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法及記錄媒體 |
WO2018167846A1 (ja) * | 2017-03-14 | 2018-09-20 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
KR20190116402A (ko) * | 2017-03-14 | 2019-10-14 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법, 및 프로그램 |
JPWO2018167846A1 (ja) * | 2017-03-14 | 2019-11-21 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
KR102311459B1 (ko) * | 2017-03-14 | 2021-10-13 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법, 및 프로그램 |
JP2018160544A (ja) * | 2017-03-22 | 2018-10-11 | Tdk株式会社 | Efem及びefemのガス置換方法 |
JP2018174259A (ja) * | 2017-03-31 | 2018-11-08 | シンフォニアテクノロジー株式会社 | ロボット搬送装置 |
JP7001910B2 (ja) | 2017-03-31 | 2022-01-20 | シンフォニアテクノロジー株式会社 | ロボット搬送装置 |
JP7079317B2 (ja) | 2018-03-23 | 2022-06-01 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JPWO2019180966A1 (ja) * | 2018-03-23 | 2021-02-18 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
WO2019180966A1 (ja) * | 2018-03-23 | 2019-09-26 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP2020017576A (ja) * | 2018-07-23 | 2020-01-30 | Tdk株式会社 | 循環式efem |
JP7206669B2 (ja) | 2018-07-23 | 2023-01-18 | Tdk株式会社 | 循環式efem |
JP2022505473A (ja) * | 2018-10-26 | 2022-01-14 | アプライド マテリアルズ インコーポレイテッド | 前面ダクト式機器フロントエンドモジュール、側面ストレージポッド、及びそれらの操作方法 |
JP7365408B2 (ja) | 2018-10-26 | 2023-10-19 | アプライド マテリアルズ インコーポレイテッド | 前面ダクト式機器フロントエンドモジュール、側面ストレージポッド、及びそれらの操作方法 |
JPWO2021156934A1 (ja) * | 2020-02-04 | 2021-08-12 | ||
WO2021156934A1 (ja) * | 2020-02-04 | 2021-08-12 | 株式会社Kokusai Electric | 制御弁、基板処理装置及び半導体装置の製造方法 |
CN114729701A (zh) * | 2020-02-04 | 2022-07-08 | 株式会社国际电气 | 控制阀、基板处理装置及半导体器件的制造方法 |
KR20220104007A (ko) | 2020-02-04 | 2022-07-25 | 가부시키가이샤 코쿠사이 엘렉트릭 | 제어 밸브, 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 |
KR20230045553A (ko) | 2021-09-28 | 2023-04-04 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법, 기판 처리 방법 및 프로그램 |
JP7375069B2 (ja) | 2022-03-07 | 2023-11-07 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
Also Published As
Publication number | Publication date |
---|---|
KR20180017180A (ko) | 2018-02-20 |
KR101998578B1 (ko) | 2019-07-10 |
JPWO2017022366A1 (ja) | 2018-04-26 |
TWI644380B (zh) | 2018-12-11 |
JP6606551B2 (ja) | 2019-11-13 |
US20180148834A1 (en) | 2018-05-31 |
CN107851597A (zh) | 2018-03-27 |
TW201715630A (zh) | 2017-05-01 |
SG11201800143RA (en) | 2018-02-27 |
CN107851597B (zh) | 2021-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6606551B2 (ja) | 基板処理装置、半導体装置の製造方法および記録媒体 | |
US11456190B2 (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
US11365482B2 (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
JP5518499B2 (ja) | 半導体デバイスの製造方法および基板処理装置 | |
US10529607B2 (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
WO2017037937A1 (ja) | 反応管、基板処理装置および半導体装置の製造方法 | |
US9023429B2 (en) | Method of manufacturing semiconductor device and substrate processing apparatus | |
US20140295667A1 (en) | Method of Manufacturing Semiconductor Device | |
JP6402058B2 (ja) | 基板処理装置、半導体装置の製造方法及びプログラム | |
US11967499B2 (en) | Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium | |
JP7429747B2 (ja) | 基板処理装置、半導体装置の製造方法及びプログラム | |
JP7157236B2 (ja) | 基板処理方法、半導体装置の製造方法、プログラム及び基板処理装置 | |
JP6475135B2 (ja) | 半導体装置の製造方法、ガス供給方法及び基板処理装置並びに基板保持具 | |
US20220262632A1 (en) | Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium | |
KR20230050451A (ko) | 기판 처리 방법, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 장치 | |
JP6625256B2 (ja) | 基板処理装置、半導体装置の製造方法および記録媒体 | |
US20220301852A1 (en) | Method of manufacturing semiconductor device, method of processing substrate, recording medium, and substrate processing apparatus | |
JP2017220526A (ja) | 半導体装置の製造方法、基板処理装置及びプログラム | |
JP6224263B2 (ja) | 基板処理装置、半導体装置の製造方法及びプログラム | |
KR20230035619A (ko) | 반도체 장치의 제조 방법, 프로그램, 기판 처리 장치 및 기판 처리 방법 | |
JP2023023351A (ja) | 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16832645 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2017532428 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20187001271 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11201800143R Country of ref document: SG |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16832645 Country of ref document: EP Kind code of ref document: A1 |