KR20030080033A - 플립 칩용 자체-동평면 범핑 형태 - Google Patents

플립 칩용 자체-동평면 범핑 형태 Download PDF

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Publication number
KR20030080033A
KR20030080033A KR10-2003-7011121A KR20037011121A KR20030080033A KR 20030080033 A KR20030080033 A KR 20030080033A KR 20037011121 A KR20037011121 A KR 20037011121A KR 20030080033 A KR20030080033 A KR 20030080033A
Authority
KR
South Korea
Prior art keywords
stem
base portion
stud bump
base
stud
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2003-7011121A
Other languages
English (en)
Korean (ko)
Inventor
영도 권
라젠드라 펜즈
나지르 아마드
경문 김
Original Assignee
치팩, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 치팩, 인코포레이티드 filed Critical 치팩, 인코포레이티드
Publication of KR20030080033A publication Critical patent/KR20030080033A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Wire Bonding (AREA)
KR10-2003-7011121A 2001-02-27 2002-02-25 플립 칩용 자체-동평면 범핑 형태 Withdrawn KR20030080033A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US27224001P 2001-02-27 2001-02-27
US60/272,240 2001-02-27
US10/080,384 2002-02-22
US10/080,384 US6940178B2 (en) 2001-02-27 2002-02-22 Self-coplanarity bumping shape for flip chip
PCT/US2002/005394 WO2002069372A2 (en) 2001-02-27 2002-02-25 Self-coplanarity bumping shape for flip chip

Publications (1)

Publication Number Publication Date
KR20030080033A true KR20030080033A (ko) 2003-10-10

Family

ID=26763444

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7011121A Withdrawn KR20030080033A (ko) 2001-02-27 2002-02-25 플립 칩용 자체-동평면 범핑 형태

Country Status (7)

Country Link
US (3) US6940178B2 (https=)
EP (1) EP1382057A2 (https=)
JP (1) JP2005503660A (https=)
KR (1) KR20030080033A (https=)
AU (1) AU2002244124A1 (https=)
TW (1) TWI279881B (https=)
WO (1) WO2002069372A2 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW517361B (en) * 2001-12-31 2003-01-11 Megic Corp Chip package structure and its manufacture process
TW544882B (en) 2001-12-31 2003-08-01 Megic Corp Chip package structure and process thereof
TW503496B (en) 2001-12-31 2002-09-21 Megic Corp Chip packaging structure and manufacturing process of the same
TW584950B (en) 2001-12-31 2004-04-21 Megic Corp Chip packaging structure and process thereof
US6673698B1 (en) 2002-01-19 2004-01-06 Megic Corporation Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers
TWI245402B (en) 2002-01-07 2005-12-11 Megic Corp Rod soldering structure and manufacturing process thereof
US6959134B2 (en) * 2003-06-30 2005-10-25 Intel Corporation Measuring the position of passively aligned optical components
JP4083638B2 (ja) * 2003-07-30 2008-04-30 東北パイオニア株式会社 フレキシブル配線基板、半導体チップ実装フレキシブル配線基板、表示装置、半導体チップ実装方法
TWI273664B (en) * 2004-03-26 2007-02-11 Advanced Semiconductor Eng Bumping process, bump structure, packaging process and package structure
KR100597993B1 (ko) * 2004-04-08 2006-07-10 주식회사 네패스 반도체 패키지용 범프, 그 범프를 적용한 반도체 패키지 및 제조방법
JP4768343B2 (ja) * 2005-07-27 2011-09-07 株式会社デンソー 半導体素子の実装方法
US8653657B2 (en) * 2005-08-23 2014-02-18 Rohm Co., Ltd. Semiconductor chip, method of manufacturing semiconductor chip, and semiconductor device
US9847309B2 (en) * 2006-09-22 2017-12-19 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming vertical interconnect structure between semiconductor die and substrate
US8193034B2 (en) * 2006-11-10 2012-06-05 Stats Chippac, Ltd. Semiconductor device and method of forming vertical interconnect structure using stud bumps
US8174119B2 (en) * 2006-11-10 2012-05-08 Stats Chippac, Ltd. Semiconductor package with embedded die
US8133762B2 (en) 2009-03-17 2012-03-13 Stats Chippac, Ltd. Semiconductor device and method of providing z-interconnect conductive pillars with inner polymer core
US20090014852A1 (en) * 2007-07-11 2009-01-15 Hsin-Hui Lee Flip-Chip Packaging with Stud Bumps
JP5058714B2 (ja) * 2007-08-21 2012-10-24 スパンション エルエルシー 半導体装置及びその製造方法
JP5134899B2 (ja) * 2007-09-26 2013-01-30 三洋電機株式会社 半導体モジュール、半導体モジュールの製造方法および携帯機器
FR2954588B1 (fr) * 2009-12-23 2014-07-25 Commissariat Energie Atomique Procede d'assemblage d'au moins une puce avec un element filaire, puce electronique a element de liaison deformable, procede de fabrication d'une pluralite de puces, et assemblage d'au moins une puce avec un element filaire
JP5481249B2 (ja) * 2010-03-26 2014-04-23 富士通株式会社 半導体装置及びその製造方法
JP5742109B2 (ja) * 2010-04-09 2015-07-01 コニカミノルタ株式会社 インクジェットヘッド、インクジェットヘッドの製造方法及びインクジェット描画装置
US9142533B2 (en) * 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
US8657596B2 (en) 2011-04-26 2014-02-25 The Procter & Gamble Company Method and apparatus for deforming a web
US9324667B2 (en) 2012-01-13 2016-04-26 Freescale Semiconductor, Inc. Semiconductor devices with compliant interconnects
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9646923B2 (en) 2012-04-17 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
JP6154995B2 (ja) * 2012-06-20 2017-06-28 新光電気工業株式会社 半導体装置及び配線基板、並びにそれらの製造方法
US8970035B2 (en) * 2012-08-31 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structures for semiconductor package
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same
WO2014077044A1 (ja) * 2012-11-16 2014-05-22 シャープ株式会社 フリップチップ接合方法、および当該フリップチップ接合方法を含むことを特徴とする固体撮像装置の製造方法
US9385098B2 (en) * 2012-11-21 2016-07-05 Nvidia Corporation Variable-size solder bump structures for integrated circuit packaging
JP6143104B2 (ja) * 2012-12-05 2017-06-07 株式会社村田製作所 バンプ付き電子部品及びバンプ付き電子部品の製造方法
DE102013104407B4 (de) * 2013-04-30 2020-06-18 Tdk Corporation Auf Waferlevel herstellbares Bauelement und Verfahren zur Herstellung
US20150279793A1 (en) * 2014-03-27 2015-10-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9859200B2 (en) 2014-12-29 2018-01-02 STATS ChipPAC Pte. Ltd. Integrated circuit packaging system with interposer support structure mechanism and method of manufacture thereof
JP2019060817A (ja) * 2017-09-28 2019-04-18 日本特殊陶業株式会社 電子部品検査装置用配線基板
KR102574452B1 (ko) 2018-07-03 2023-09-04 삼성전자 주식회사 반도체 칩 및 이를 포함하는 반도체 패키지
KR102724556B1 (ko) 2019-06-04 2024-10-30 삼성전자주식회사 본딩 장치 및 그를 포함하는 반도체 패키지의 제조 설비
KR20240100980A (ko) 2022-12-23 2024-07-02 삼성전자주식회사 반도체 패키지 및 그 제조 방법

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000842A (en) * 1975-06-02 1977-01-04 National Semiconductor Corporation Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices
JPS54105774A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Method of forming pattern on thin film hybrid integrated circuit
JPH07112041B2 (ja) * 1986-12-03 1995-11-29 シャープ株式会社 半導体装置の製造方法
JPH02110950A (ja) 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置
JP2836027B2 (ja) 1989-12-18 1998-12-14 カシオ計算機株式会社 半田バンプの形成方法
JPH03209725A (ja) 1990-01-11 1991-09-12 Matsushita Electric Ind Co Ltd 半導体装置の突起電極形成方法
JPH0429338A (ja) * 1990-05-24 1992-01-31 Nippon Mektron Ltd Ｉｃの搭載用回路基板及びその搭載方法
US5865365A (en) * 1991-02-19 1999-02-02 Hitachi, Ltd. Method of fabricating an electronic circuit device
US5686317A (en) * 1991-06-04 1997-11-11 Micron Technology, Inc. Method for forming an interconnect having a penetration limited contact structure for establishing a temporary electrical connection with a semiconductor die
JP3225062B2 (ja) * 1991-08-05 2001-11-05 ローム株式会社 熱硬化性樹脂シート及びそれを用いた半導体素子の実装方法
JPH05166811A (ja) 1991-12-19 1993-07-02 Fujitsu General Ltd 半田バンプの形成方法
US5346857A (en) * 1992-09-28 1994-09-13 Motorola, Inc. Method for forming a flip-chip bond from a gold-tin eutectic
US5914614A (en) * 1996-03-12 1999-06-22 International Business Machines Corporation High density cantilevered probe for electronic devices
US5386624A (en) * 1993-07-06 1995-02-07 Motorola, Inc. Method for underencapsulating components on circuit supporting substrates
US5592736A (en) * 1993-09-03 1997-01-14 Micron Technology, Inc. Fabricating an interconnect for testing unpackaged semiconductor dice having raised bond pads
JPH07122562A (ja) 1993-10-20 1995-05-12 Tanaka Denshi Kogyo Kk バンプ形成方法及びワイヤボンディング方法並びにバンプ構造及びワイヤボンディング構造
US5508561A (en) * 1993-11-15 1996-04-16 Nec Corporation Apparatus for forming a double-bump structure used for flip-chip mounting
JPH07142490A (ja) 1993-11-17 1995-06-02 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2664878B2 (ja) * 1994-01-31 1997-10-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体チップパッケージおよびその製造方法
DE19524739A1 (de) * 1994-11-17 1996-05-23 Fraunhofer Ges Forschung Kernmetall-Lothöcker für die Flip-Chip-Technik
JP2735022B2 (ja) 1995-03-22 1998-04-02 日本電気株式会社 バンプ製造方法
JP3209875B2 (ja) * 1995-03-23 2001-09-17 株式会社日立製作所 基板の製造方法及び基板
JPH08288424A (ja) * 1995-04-18 1996-11-01 Nec Corp 半導体装置
JP2796070B2 (ja) * 1995-04-28 1998-09-10 松下電器産業株式会社 プローブカードの製造方法
US5874780A (en) * 1995-07-27 1999-02-23 Nec Corporation Method of mounting a semiconductor device to a substrate and a mounted structure
DE19527661C2 (de) * 1995-07-28 1998-02-19 Optrex Europ Gmbh Elektrische Leiter aufweisender Träger mit einem elektronischen Bauteil und Verfahen zum Kontaktieren von Leitern eines Substrates mit Kontaktwarzen eines elektronischen Bauteils
KR100186752B1 (ko) * 1995-09-04 1999-04-15 황인길 반도체 칩 본딩방법
US5889326A (en) * 1996-02-27 1999-03-30 Nec Corporation Structure for bonding semiconductor device to substrate
JP2951882B2 (ja) * 1996-03-06 1999-09-20 松下電器産業株式会社 半導体装置の製造方法及びこれを用いて製造した半導体装置
JP2828021B2 (ja) * 1996-04-22 1998-11-25 日本電気株式会社 ベアチップ実装構造及び製造方法
JP2842378B2 (ja) * 1996-05-31 1999-01-06 日本電気株式会社 電子回路基板の高密度実装構造
JP3326466B2 (ja) 1996-10-15 2002-09-24 松下電器産業株式会社 半導体素子の電極形成方法
JP2924830B2 (ja) * 1996-11-15 1999-07-26 日本電気株式会社 半導体装置及びその製造方法
US5795818A (en) * 1996-12-06 1998-08-18 Amkor Technology, Inc. Integrated circuit chip to substrate interconnection and method
US5931371A (en) * 1997-01-16 1999-08-03 Ford Motor Company Standoff controlled interconnection
JP3267181B2 (ja) 1997-01-28 2002-03-18 松下電器産業株式会社 金属突起電極形成装置及び金属突起電極形成方法
JP3070514B2 (ja) * 1997-04-28 2000-07-31 日本電気株式会社 突起電極を有する半導体装置、半導体装置の実装方法およびその実装構造
JP3564944B2 (ja) 1997-05-22 2004-09-15 松下電器産業株式会社 チップの実装方法
US6337522B1 (en) * 1997-07-10 2002-01-08 International Business Machines Corporation Structure employing electrically conductive adhesives
JP3420917B2 (ja) * 1997-09-08 2003-06-30 富士通株式会社 半導体装置
JP2997231B2 (ja) * 1997-09-12 2000-01-11 富士通株式会社 マルチ半導体ベアチップ実装モジュールの製造方法
SG71734A1 (en) * 1997-11-21 2000-04-18 Inst Materials Research & Eng Area array stud bump flip chip and assembly process
US6037192A (en) * 1998-01-22 2000-03-14 Nortel Networks Corporation Process of assembling an integrated circuit and a terminal substrate using solder reflow and adhesive cure
US5953814A (en) * 1998-02-27 1999-09-21 Delco Electronics Corp. Process for producing flip chip circuit board assembly exhibiting enhanced reliability
JP3975569B2 (ja) * 1998-09-01 2007-09-12 ソニー株式会社 実装基板及びその製造方法
JP2000124348A (ja) * 1998-10-14 2000-04-28 Oki Electric Ind Co Ltd Ｖｌｓｉパッケージ
US6376352B1 (en) * 1998-11-05 2002-04-23 Texas Instruments Incorporated Stud-cone bump for probe tips used in known good die carriers
JP3209725B2 (ja) 1999-02-15 2001-09-17 株式会社シンワコーポレーション 梱包輸送容器の製品受け台
SG88747A1 (en) * 1999-03-01 2002-05-21 Motorola Inc A method and machine for underfilling an assembly to form a semiconductor package
JP2000299338A (ja) 1999-04-14 2000-10-24 Sony Corp 突起電極を有するベアチップｉｃ及び突起電極の形成方法
US6173887B1 (en) * 1999-06-24 2001-01-16 International Business Machines Corporation Method of making electrically conductive contacts on substrates
US6372622B1 (en) * 1999-10-26 2002-04-16 Motorola, Inc. Fine pitch bumping with improved device standoff and bump volume
JP3672297B2 (ja) * 1999-11-10 2005-07-20 セイコーインスツル株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US20020151228A1 (en) 2002-10-17
EP1382057A2 (en) 2004-01-21
AU2002244124A1 (en) 2002-09-12
JP2005503660A (ja) 2005-02-03
US7211901B2 (en) 2007-05-01
WO2002069372A3 (en) 2003-10-30
US6940178B2 (en) 2005-09-06
US20050218515A1 (en) 2005-10-06
WO2002069372A2 (en) 2002-09-06
US7407877B2 (en) 2008-08-05
US20050221535A1 (en) 2005-10-06
WO2002069372A8 (en) 2003-02-20
TWI279881B (en) 2007-04-21

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