WO2014077044A1 - フリップチップ接合方法、および当該フリップチップ接合方法を含むことを特徴とする固体撮像装置の製造方法 - Google Patents
フリップチップ接合方法、および当該フリップチップ接合方法を含むことを特徴とする固体撮像装置の製造方法 Download PDFInfo
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- WO2014077044A1 WO2014077044A1 PCT/JP2013/076777 JP2013076777W WO2014077044A1 WO 2014077044 A1 WO2014077044 A1 WO 2014077044A1 JP 2013076777 W JP2013076777 W JP 2013076777W WO 2014077044 A1 WO2014077044 A1 WO 2014077044A1
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Definitions
- the present invention relates to a flip chip bonding method in which an electrode of an electronic component element is bonded to a connection terminal of a substrate through a protruding electrode, and a method of manufacturing a solid-state imaging device including the flip chip bonding method.
- the wire bonding method is a method of obtaining an electrical connection by bonding both ends of an ultrafine wire to an electrode of an electronic component element and an electrode of a substrate.
- the flip chip bonding method is a method in which an electrode of an electronic component element and an electrode (bonding terminal) of a substrate are bonded by a bump (projection electrode) which is a conductive connecting member.
- the production efficiency is basically higher than that of a wire bonding method in which bonding points are bonded one by one in order with an ultrafine wire. It has the advantage of being high.
- the flip chip bonding method since the arrangement of the electrodes that are the bonding terminals of the substrate is not limited to the periphery of the electronic component element, the number of bonding terminals can be greatly increased and the mounting area of the electronic component element can be reduced. In addition, the wiring length of the circuit can be shortened. Therefore, the flip chip bonding method is suitable for high-density mounting and high-speed mounting of electronic component elements.
- the bump and the substrate electrode are bonded by a method of bonding the bump and the substrate electrode through an intermediate material such as a conductive paste, or by thermocompression bonding or thermocompression bonding using ultrasonic waves.
- an intermediate material such as a conductive paste
- thermocompression bonding or thermocompression bonding using ultrasonic waves There is a method of directly joining the two. The latter method has the advantage that the number of steps can be reduced because the intermediate material can be omitted, and the joining time can be shortened. Therefore, recently, as a flip chip bonding method, thermocompression bonding using ultrasonic waves (ultrasonic flip chip bonding method) has been frequently used.
- ultrasonic vibration is applied in a state where a constant load is applied to the bump to bond the bump and the electrode of the substrate.
- This ultrasonic flip chip bonding method has a problem that the bonding strength is not sufficient and the reliability of electrical connection is poor. Therefore, in order to solve the above problem, a method is generally known in which the load applied to the bump and the output of the applied ultrasonic wave are increased stepwise to join the bump and the electrode of the substrate. .
- load application and application of ultrasonic waves are started at the same time. Therefore, ultrasonic waves are applied in a state where the tip ends of the bumps are not sufficiently crushed. That is, since the ultrasonic wave is applied in a state where the bonding between the bump and the substrate electrode is hardly performed, the electronic component element and the substrate slide with the ultrasonic vibration from the ultrasonic vibrator.
- Patent Documents 1 and 2 disclose a technique for making the contact state between the bump and the electrode of the substrate uniform and performing bonding with excellent bonding strength.
- FIG. 6 shows changes in the load load and the ultrasonic output state in the joining method disclosed in Patent Document 1.
- (A) in FIG. 6 shows the transition of the load amount to be applied, and (b) shows the transition of the output state of the applied ultrasonic wave. As shown in FIG.
- a bonding tool is lowered at a predetermined speed while applying an ultrasonic wave, and a bumping tool is controlled while applying an ultrasonic wave after the first process. And a second step of applying a predetermined pressing load to bond the bump to the surface to be bonded.
- Japanese Patent Publication Japanese Patent Laid-Open No. 2002-43354 (published on February 8, 2002)” Japanese Patent Publication “Patent No. 4548059 (issued on September 22, 2010)”
- the bonding strength can be improved as compared with the bonding method disclosed in Patent Document 1 because the bump central portion may be bonded.
- the pressing state of the bumps against the electrodes (joining terminals) on the substrate becomes non-uniform.
- the bonding state differs for each bump and substrate electrode, and it is difficult to ensure a stable bonding state and reliability.
- the electrode pitch tends to become finer.
- the bump height decreases as the bump diameter decreases.
- the influence of the warp of the substrate used for the electronic component element is remarkably affected, and the gap between the electronic component element and the substrate is partially narrowed. Therefore, in the sealing step after flip chip bonding, there is a drawback that the fluidity of the sealing resin in the gap between the electronic component element and the substrate is deteriorated and bubbles remain.
- the present invention has been made in view of the above-described problems, and the object thereof is to make the contact state uniform when the electrode of the electronic component element is bonded to the connection terminal of the substrate via the protruding electrode.
- Another object of the present invention is to provide a flip chip bonding method capable of obtaining good bonding strength, and a method of manufacturing a solid-state imaging device including the flip chip bonding method.
- a flip chip bonding method is a flip chip bonding method in which an electrode of an electronic component element is bonded to a connection terminal of a substrate through a protruding electrode in order to solve the above-described problem.
- the pressure is gradually increased until the second pressure is equal to or higher than the yield stress of the bulk material constituting the protruding electrode. And a second application step of applying.
- a method for manufacturing a solid-state imaging device includes the above-described flip-chip bonding method in order to solve the above-described problem.
- the protruding electrodes are deformed in the first application step so that the heights of the protruding electrodes are made uniform, and the protruding electrodes are adjusted to a height suitable for the warpage of each substrate. can do. That is, even if the height variation between the projection electrodes, the warpage of each substrate, and the warpage between the substrates vary, the projection electrode is brought into contact with the substrate directly in the first application step. The variation and the warpage of the substrate are both canceled out to make the heights of the protruding electrodes uniform, and the variation in the height between the protruding electrodes can be suppressed.
- since no ultrasonic vibration is applied to the protruding electrode excessive deformation due to a decrease in rigidity of the protruding electrode due to the ultrasonic vibration can be avoided.
- the flip-chip bonding method according to one aspect of the present invention, at the time when the ultrasonic vibration is started to be applied to the protruding electrode, a part of the tip portion of the protruding electrode is already deformed. There is no possibility that the protruding electrode is rapidly crushed at the moment when the sonic vibration is applied. As a result, even when ultrasonic vibration is applied to the protruding electrode, a sufficient contact area is ensured between the protruding electrode and the connection terminal of the substrate. A new surface that contributes to bonding can be efficiently generated, and a good bonding surface is formed.
- each protruding electrode with respect to each connection terminal on the substrate becomes uniform, so that ultrasonic vibration can be sufficiently applied to all the protruding electrodes, and between the protruding electrode and the connection terminal on the substrate. Can be strong.
- the productivity is higher than the conventional flip chip bonding method. Even if the electrode of the electronic component element is very small, the connection between the protruding electrode and the substrate is possible regardless of the height variation between the protruding electrodes and the warping of the substrate. A good joint surface can be formed between the terminals and high connection reliability and high quality can be ensured.
- (A) in a figure is a figure which shows the state of the bump at the time of the alignment process which concerns on one Embodiment of this invention
- (b) in the figure is at the time of the contact process which concerns on one Embodiment of this invention.
- It is a figure which shows the state of a bump
- (c) in a figure is a figure which shows the state of the bump at the time of the 1st application process which concerns on one Embodiment of this invention.
- 1 is a schematic view of a flip chip bonding apparatus according to an embodiment of the present invention.
- (A) in a figure is a figure which shows the state of the bump before flip-chip joining which concerns on one Embodiment of this invention
- (b) in a figure is the 1st application process which concerns on one Embodiment of this invention It is a figure which shows the state of a back bump
- (c) in a figure is a figure which shows the state of the bump after the 2nd application process which concerns on one Embodiment of this invention.
- the transition of the applied pressure and the applied ultrasonic vibration in the flip-chip bonding method according to the embodiment of the present invention is shown.
- (A) in the figure shows the transition of the applied pressure
- (b) ) Shows the transition of the applied ultrasonic vibration amplitude.
- (A) in a figure is a figure which shows the state of the 2 step
- (b) in the figure is 1st which concerns on one Embodiment of this invention.
- (c) in a figure is a figure which shows the state of the bump after the 2nd application process which concerns on one Embodiment of this invention.
- FIG. 2 is a schematic view of the flip chip bonding apparatus 10 according to the present embodiment.
- the flip-chip bonding apparatus 10 drives the tool 3 that moves up and down and left and right while holding the electronic component element 1, the stage 9 on which the substrate 4 is placed, and the tool 3.
- Control for controlling the tool driving unit 11, the stage driving unit 12 for driving the stage 9, the ultrasonic transducer 13 for generating predetermined ultrasonic vibrations, and the tool driving unit 11, the stage driving unit 12, and the ultrasonic transducer 13 It has a system 16.
- the tool 3 moves up, down, left and right, and presses the electronic component element 1 against the stage 9 so that pressure can be applied to the electronic component element 1.
- the stage 9 may also be movable up and down and left and right.
- the tool driving unit 11 moves the tool 3 up, down, left, and right under the control of the control system 16.
- the stage drive unit 12 moves the stage 9 up, down, left, and right under the control of the control system 16.
- the ultrasonic vibration applied to the electronic component element 1 by the ultrasonic vibrator 13 is controlled by the control system 16.
- the tool 3 has a heating means (not shown), and the electronic component element 1 sucked and held by the tool 3 can be heated to a predetermined temperature.
- the stage 9 also has heating means (not shown) so that the substrate 4 placed on the stage 9 can be heated to a predetermined temperature. Note that the heating means is not necessarily provided on both the tool 3 and the stage 9, and may be provided on at least one of them.
- the electronic component element 1 sucked and held by the tool 3 and the substrate 4 placed on the stage 9 are aligned, and the electrode provided on the electronic component element 1 And an electrode provided on the substrate 4 are joined via bumps.
- the substrate 4 has an opening at the center, and the electrode of the substrate 4 is provided on the inner side of the opening.
- the control system 16 controls the tool driving unit 11 to move the tool 3 up, down, left, and right, thereby adjusting the position of the electronic component element 1 to the position of the opening of the substrate 4. Controls the tool driving unit 11 to further lower the tool 3 toward the stage 9, thereby pressing the electronic component element 1 against the stage 9.
- substrate 4 and the electrode of the electronic component element 1 are joined.
- the electrodes of the electronic component element 1 and the electrodes of the substrate 4 are joined via bumps, and the bumps are formed in advance on the electrodes of the electronic component element 1 or the electrodes of the substrate 4. Below, it demonstrates supposing the case where the bump is previously formed in the electrode of the electronic component element 1.
- the control system 16 controls the tool driving unit 11, and the tool 3 holding the electronic component element 1 having the bump-formed electrode is held on the stage 9 side.
- the electronic component element 1 is pressed against the stage 9 and a certain pressure is applied to the bumps to flatten the bumps.
- the flattening of the bumps refers to an operation of applying minute plastic deformation by applying pressure to a plurality of bumps provided between the electrode of the electronic component element 1 and the electrode of the substrate 4. Thereby, it is possible to align the dimensions of a plurality of bumps that are microscopically different.
- the control system 16 again controls the tool driving unit 11 to raise the tool 3 upward once.
- the control system 16 applies predetermined ultrasonic vibrations to the bumps by the ultrasonic vibrator 13 to bond the bumps and the electrodes of the substrate.
- the electrode formed on the electronic component element is formed by sputtering a conductive layer made of, for example, aluminum (Al) -silicon (Si) on the mounting surface of the electronic component element.
- a conductive layer made of, for example, aluminum (Al) -silicon (Si) on the mounting surface of the electronic component element.
- the bump is a ball bump formed in a ball shape by, for example, a gold (Au) wire on the electrode formed in the electronic component element.
- Au gold
- the diameter is 60 ⁇ m and the height is about 40 ⁇ m to 45 ⁇ m.
- the height of the bump is not uniform due to an error when it is formed on the electrode of the electronic component element, and the height varies among individual bumps.
- the substrate is a substrate having an open center. The opening is larger than the pixel area when the electronic component element is a solid-state imaging element.
- the substrate may be a ceramic substrate or an organic substrate made of an insulating material such as a glass cloth epoxy resin, an aramid fiber nonwoven fabric epoxy resin, and a liquid crystal polymer resin.
- an electrode (joining terminal) formed on the substrate is formed by sequentially plating, for example, nickel (Ni) and Au on a wiring such as tungsten (W) formed on the substrate. .
- Au plated on the outermost layer of the electrode is plated to a thickness of 0.5 ⁇ m by, for example, an electroless plating method.
- the flip chip bonding method according to the present embodiment includes the following steps. (A) Positioning step for positioning the electronic component element and the substrate (b) After the positioning step, the electrode of the electronic component element is bumped while heating from at least one of the electronic component element and the substrate.
- FIG. 1 is a diagram showing the state of the bump during the alignment step
- (b) is a diagram showing the state of the bump during the contact step
- (c) is the first application step. It is a figure which shows the state of the bump at the time.
- 3A is a diagram showing the state of the bump before flip chip bonding
- FIG. 3B is a diagram showing the state of the bump after the first application step
- FIG. 3C is a diagram showing the state of the second bump. It is a figure which shows the state of the bump after an application process.
- FIG. 4 shows changes in applied pressure and applied ultrasonic vibration in the flip-chip bonding method according to the present embodiment, (a) shows changes in applied pressure, and (b) shows application. The transition of the ultrasonic vibration amplitude is shown.
- an electronic component element 1 having a bump 2 formed on an electrode and a substrate 4 are prepared.
- the tool 3 of the flip chip bonding apparatus 10 holds the electronic component element 1 by suction, and the substrate 4 is placed on the stage.
- An enlarged view of the bump 2 at this time is shown in FIG.
- the bump 2 is still formed on the electrode of the electronic component element 1 and has a protrusion having a height H.
- the bump 2 is formed with a first step portion 2a to a third step portion 2c by capillaries used for forming ball bumps.
- the first step 2a is a step corresponding to the pedestal of the bump 2
- the second step 2b is a step having a shape formed by a capillary
- the third step 2c is a gold wire bump. It is a step portion having a shape formed by a capillary to be used.
- the control system 16 controls the tool driving unit 11 to move the tool 3 up and down, left and right, thereby placing the electronic component element 1 on the stage. Alignment with the substrate 4 is performed (alignment process). Specifically, the position of the electronic component element 1 is aligned with the position of the opening of the substrate 4, and the bump 2 provided on the electronic component element 1 and the electrode 5 provided on the substrate 4 are opposed to each other.
- control system 16 controls the tool driving unit 11 to lower the tool 3 to the stage 9 side, so that the electrodes of the electronic component element 1 are bumped 2 as shown in FIG. Is brought into contact with the electrode 5 of the substrate 4 (contact process). At this time, at least one of the electrode of the electronic component element 1 and the electrode 5 of the substrate 4 is heated to a predetermined temperature by heating means provided on at least one of the tool 3 and the stage 9.
- the control system 16 controls the tool driving unit 11 to further lower the tool 3 to the stage 9 side, thereby pressing the electronic component element 1 against the stage 9 as shown in (c) of FIG.
- a first pressure equal to or higher than the yield stress of the bulk material constituting the bump 2 is applied to the bump 2 of the electronic component element 1 (first application step).
- Yield stress is the stress at the yield point (when the external force applied to an object is gradually increased, the deformation of the object increases rapidly and a permanent strain is generated with almost no change in stress).
- the control system 16 controls the tool driving unit 11 to apply the first pressure F1 to the bump 2 by the tool 3 for a time T1 ((a) in FIG. 4).
- the ultrasonic transducer is controlled so as not to apply ultrasonic vibration to the bump 2 ((b) in FIG. 4).
- a part of all the bumps 2 formed on each electrode of the electronic component element 1 is deformed.
- An enlarged view of the bump 2 at this time is shown in FIG.
- a part of the tip end portion (third step portion 2c) of the bump 2 is crushed. Due to errors in forming the bumps 2 on the electrodes of the electronic component element 1, the heights of the individual bumps 2 may vary, or the substrate 4 may be warped.
- the heights of the bumps 2 can be made uniform, and the bumps 2 can be adjusted to a height suitable for the warp of the substrate 4. That is, even if the height between the bumps 2 varies or the substrate 4 is warped, the height variation between the bumps 2 in the electronic component element 1 and the warp of the substrate 4 can be reduced. By offsetting both, the heights of the bumps 2 can be made uniform, and variations in height between the bumps 2 can be suppressed.
- since no ultrasonic vibration is applied to the bump 2 excessive deformation due to a decrease in rigidity of the bump 2 due to the ultrasonic vibration can be avoided. Furthermore, as a result of securing a contact area between all the bumps 2 in the electronic component element 1 and the electrodes 5 of the substrate 4, efficient ultrasonic vibration can be applied to all the joint surfaces. .
- the first pressure F1 applied to the bump 2 by the tool 3 is a pressure for deforming a portion having a length of about one third from the tip of the bump 2, that is, until the height of the bump 2 becomes 2 / 3H.
- the pressure is preferably a pressure that deforms the tip of the bump 2. More specifically, it is preferable that the height of the bump 2 facing the portion where the warp of the substrate 4 is the largest is deformed by 1/3 or more. Thereby, it is possible to flatten the bump 2 while ensuring a sufficient contact area between the flattened bump 2 and the electrode 5 of the substrate 4 while ensuring a sufficient height of the bump 2.
- the deformation center in the height direction and the width direction of the bump 2 is fixed between the bump 2 and the electrode 5 of the substrate 4. If this fixing is not sufficient, distortion occurs in the ultrasonic vibration direction, the bumps 2 are inclined, and the shapes of the individual bumps 2 are not uniform, and the electrodes of the electronic component element 1 and the electrodes 5 of the substrate 4 Bonding becomes unstable. Therefore, by deforming the bump 2 in the first application process, a strong bonding surface between the electrode of the electronic component element 1 and the electrode 5 of the substrate 4 can be formed.
- the height of the bump 2 is sufficiently secured, it is possible to prevent the gap between the electronic component element 1 and the substrate 4 from being partially narrowed under the influence of the warp of the substrate 4. That is, in the sealing step after flip-chip bonding, the problem that the fluidity of the sealing resin in the gap between the electronic component element 1 and the substrate 4 deteriorates and bubbles remain can be prevented.
- the bump 2 is Au, it is preferable to apply 0.25 N to 0.3 N to one bump 2.
- the control system 16 controls the tool driving unit 11 to raise the tool 3 to the side opposite to the stage 9, thereby reducing or stopping the pressing of the electronic component element 1 against the stage 9.
- the application of the first pressure F1 to the bumps 2 of the electronic component element 1 is reduced or stopped (decrease / stop process).
- This lowering / stopping process is continued for a time T2 ((a) in FIG. 4).
- the flattened central portion of the bump 2 becomes difficult to be joined, and only the periphery of the bump 2 is joined. Therefore, in the first application step and the lowering / stopping step, a good bonding surface is formed between the bump 2 following the shape of the electrode 5 of the substrate 4 and the electrode 5 of the substrate 4. This is necessary to increase the bonding strength between the substrate 4 and the electrode 5.
- the control system 16 controls the tool driving unit 11 while applying a predetermined ultrasonic vibration to the ultrasonic vibrator with respect to the bump 2 of the electronic component element 1, and lowers the tool 3 again to the stage 9 side.
- a predetermined ultrasonic vibration to the ultrasonic vibrator with respect to the bump 2 of the electronic component element 1, and lowers the tool 3 again to the stage 9 side.
- pressure is applied to the bump 2 of the electronic component element 1 until the second pressure is equal to or higher than the yield stress of the bulk material constituting the bump 2.
- the second pressure F2 is equal to or higher than the first pressure F1 (for example, 0.25 N to 0.4 N).
- the control system 16 applies ultrasonic vibration having a predetermined ultrasonic vibration amplitude W to the bump 2 by the ultrasonic transducer for a time T3 ((b) in FIG. 4).
- the tool driving unit 11 is controlled to control the tool 3 so that the pressure applied to the bump 2 gradually becomes the second pressure F2 during the time T3 ((a) in FIG. 4). ).
- the bump 2 of the electronic component element 1 is further deformed, and the height H3 of the bump 2 becomes smaller than 2 / 3H.
- a new surface of the bump 2 is continuously formed, the contact area of the bonding surface is increased, and a bonding surface between the bump 2 of the electronic component element 1 and the electrode terminal surface of the substrate 4 is formed.
- the value of the ultrasonic vibration amplitude W is not particularly limited, and an appropriate value may be set according to the materials constituting the electrodes of the electronic component element 1, the bumps 2, and the electrodes 5 of the substrate 4.
- control system 16 maintains the pressure applied to the bumps 2 of the electronic component element 1 at the second pressure F2 for the time T4 ((a) in FIG. 4), and also against the bumps 2.
- the applied ultrasonic vibration is maintained at the ultrasonic vibration amplitude W ((b) in FIG. 4).
- the control system 16 controls the tool driving unit 11 to raise the tool 3 to the side opposite to the stage 9, thereby stopping the pressing of the electronic component element 1 against the stage 9.
- the application of the second pressure F2 to the bump 2 is stopped.
- the control system 16 stops the application of the ultrasonic vibration amplitude W by the ultrasonic vibrator.
- the substrate 4 used for the electronic component Since the substrate 4 used for the electronic component has an opening, the surface on which the electronic component element 1 is mounted on the substrate 4 is not a perfect plane, and undulation occurs, resulting in a partial difference of several tens of ⁇ m. Often exists. Therefore, in a state where the electronic component element 1 is mounted on the substrate 4 at the time of bonding, the contact surface between the bump 2 and the electrode 5 of the substrate 4 is not necessarily in a state where all the bumps 2 are in uniform contact with each other. In some cases, the bump 2 is not in contact with the electrode 5, so-called one-sided state.
- the bump 2 and the electrode 5 of the substrate 4 are in contact with each other under proper conditions required for bonding. It is required to be. Specifically, in the case of the electronic component element 1 having a large number of bumps 2, it is necessary to uniformly bring all the bumps 2 into contact with the electrodes 5 of the substrate 4. Therefore, in order to stably perform bonding with excellent bonding strength, it is desirable that the bump 2 is a two-stage bump including a first bump and a second bump.
- FIG. 5 shows an enlarged view of the two-step bump.
- A) in FIG. 5 is a diagram showing the state of the two-step bump before flip chip bonding
- (b) is a diagram showing the state of the two-step bump after the first application step
- (c) These are figures which show the state of the two-step bump after a 2nd application process.
- the two-step bump 8 includes a first bump 6 and a second bump 7 stacked on the first bump 6.
- a method for manufacturing the two-step bump 8 will be briefly described below. First, a metal wire is cut by applying ultrasonic vibration while pressing a known metal ball. Thereby, the first bump 6 is formed. Thereafter, another metal ball is bonded onto the first bump 6 in the same manner, the tip of the capillary is moved in the lateral direction, and then the ultrasonic vibration is applied to the metal ball to cut the metal wire. Thereby, the second bump 7 is formed, and the two-step bump 8 is completed.
- the first bump 6 and the second bump 7 are respectively made up of the first step portion 8a and the second step portion 8b, and the first step portion 7a to the third step portion, depending on the capillaries used when forming the ball bumps. 7c is made.
- the first step portion 8a is a step portion corresponding to the pedestal portion of the first bump 6, and the second step portion 8b is a portion that contributes to the connection between the first bump 6 and the second bump 7 and is used.
- the second step portion 8 b is deformed by the connection between the first bump 6 and the second bump 7.
- the first step portion 7a is a step portion corresponding to the pedestal portion of the second bump 7
- the second step portion 7b is a step portion having a shape formed by a capillary
- the third step portion 7c is , A tip portion from which a gold wire bump is torn, and a step portion having a shape formed by a capillary to be used.
- the height H1 of the first bump 6 is lower than the height H2 of the second bump 7, and the bump diameter R1 of the first bump 6 is the bump diameter of the second bump 7. It is preferably smaller than R2. More specifically, the height of the bump 2 facing the portion with the largest warp of the substrate 4 is deformed by 1/3 or more, and the bump diameter is 1/6 or more to the bump diameter of the first bump 6 1 / It is preferable to deform 3 or less. Thereby, the deformation of the second bump 7 becomes a main factor of bonding, and the first bump 6 that is not excessively deformed can serve as a stopper for ensuring the total height of the two-step bump 8.
- the second bump 7 is a main cause of deformation.
- the height of the first bump 6 is made lower than the height of the second bump 7 so that the first bump 6 is not deformed, that is, not deformed.
- the first bump 6 has a diameter of 60 ⁇ m and a height of about 30 to 40 ⁇ m.
- the second bump 7 formed on the first bump 6 has, for example, a diameter of 65 ⁇ m to 70 ⁇ m and a height of 40 to 50 ⁇ m.
- the electrode 5 of the substrate 4 facing the second bump 7 is desirably larger than the electrode of the electronic component element 1.
- the electrode has a bowl shape and it is difficult to ensure the flatness of the electrode, so that the electrode 5 of the substrate 4 is the electrode of the electronic component element 1. It is desirable to be larger.
- the two-step bump 8 is used as the bump. Therefore, at the time of the first application process, as shown in FIG. 5B, a part of the tip end portion (third step portion 7c) of the second bump 7 of the two-step bump 8 is deformed.
- the first pressure applied to the two-step bump 8 by the tool 3 is a pressure that deforms a portion of the second bump 7 by a third of the length from the tip of the second bump 7, that is, the second bump 7.
- the pressure is preferably a pressure that deforms the tip end portion (third step portion 7c) of the second bump 7 until the height becomes 2 / 3H2.
- the two-step bump 8 is Au, it is preferable to apply 0.25 N to 0.3 N to one two-step bump 8.
- Bump height is increased by making the bumps into two bumps 8. Therefore, when the second bumps 7 are deformed during the first application step, the height of the two-step bumps 8 can be made uniform, and the two-step bumps 8 can be adjusted to a height suitable for the warp and undulation of the substrate 4. That is, even if there is a variation in the height between the two-step bumps 8 or the substrate 4 is warped or undulated, the height variation between the two-step bumps 8 in the electronic component element 1 It is possible to cancel the warpage and undulation of the substrate 4 and to make the heights of the two-step bumps 8 uniform, and to suppress variations in height between the two-step bumps 8. Then, as shown in FIG.
- the second bump 7 bites into the first bump 6 by the second application step, and the height H4 of the second bump 7 of the two-step bump 8 is 2 / 3H2. Becomes smaller. Thereby, the first bump 6 and the second bump 7 are adhered to each other, and a good bonding surface is formed between the electrodes 5 of the substrate 4.
- the first bump 6 and the second bump 7 are made of the same material, so that the bondability between them is good.
- the two-step bump 8 can be flattened while sufficiently securing the height of the two-step bump 8. Further, since the height of the two-step bump 8 is sufficiently secured, it is possible to prevent the gap between the electronic component element 1 and the substrate 4 from being partially narrowed due to the influence of the warp of the substrate 4. . That is, in the sealing process after flip chip bonding, the gap between the electronic component element 1 and the substrate 4 is widened, so that the fluidity of the sealing resin is improved and problems such as bubbles remaining can be prevented.
- the bump height is increased by making the bump into a two-stage bump, and therefore, there is a high possibility that the bump is inclined by applying ultrasonic vibration.
- the bump height becomes high while the base diameter of the bump is constant, so that when the ultrasonic vibration which is a lateral vibration is applied, the swing of the bump becomes intense, and as a result, the height is low.
- buckling that is, the bump itself tends to be inclined as compared with the step bump.
- the second bump 7 is deformed before applying the ultrasonic vibration, so that the contact area with the electrode 5 of the substrate 4 can be secured in all the two-stage bumps 8.
- the bumps are flattened so that all the bumps have the same dimensions.
- the bumps since no ultrasonic vibration is applied to the bump, excessive deformation due to a decrease in the rigidity of the bump due to the ultrasonic vibration can be avoided.
- the ultrasonic vibration since a part of the tip of the bump has already been deformed when the ultrasonic vibration is started to be applied to the bump, the ultrasonic vibration There is no possibility that the bumps will be abruptly collapsed at the moment of application of. As a result, even if ultrasonic vibration is applied to the bump, a sufficient contact area is ensured between the bump and the substrate electrode, so the new surface contributes to bonding between the bump and the substrate electrode. Can be efficiently generated, and a good joint surface is formed. Therefore, the pressing state of each bump against each electrode on the substrate becomes uniform, so that ultrasonic vibration can be sufficiently applied to all the bumps, and strong bonding is realized between the bump and the electrode on the substrate. can do.
- the productivity is higher than that of the conventional flip chip bonding method, and even if the electrodes of the electronic component element are very small regardless of the height variation between the bumps and the warp of the substrate, A good joint surface can be formed between them, and high connection reliability and high quality can be ensured.
- the height of the two-step bump is adjusted so that the crushing of the two-step bump (first application step) matches the surface state of the substrate electrode. ing. Therefore, it is possible to join the two-step bump and the substrate electrode in a state suitable for the warpage and undulation of the substrate.
- a flip-chip bonding method that is strong against warping and undulation is provided.
- a flip chip bonding method is a flip chip bonding method in which an electrode of an electronic component element is bonded to a connection terminal of a substrate via a protruding electrode, and the position of the electronic component element and the substrate is After the alignment step for alignment and the alignment step, the electrode of the electronic component element is passed through the protruding electrode while heating at least one of the electrode of the electronic component element and the connection terminal of the substrate.
- the height of the protruding electrode can be made uniform, and the protruding electrode can be made to a height suitable for the warp of each substrate. That is, even if the height variation between the projection electrodes, the warpage of each substrate, and the warpage between the substrates vary, the projection electrode is brought into contact with the substrate directly in the first application step. The variation and the warpage of the substrate are both canceled out to make the heights of the protruding electrodes uniform, and the variation in the height between the protruding electrodes can be suppressed.
- since no ultrasonic vibration is applied to the protruding electrode excessive deformation due to a decrease in rigidity of the protruding electrode due to the ultrasonic vibration can be avoided.
- the flip-chip bonding method according to one aspect of the present invention, at the time when the ultrasonic vibration is started to be applied to the protruding electrode, a part of the tip portion of the protruding electrode is already deformed. There is no possibility that the protruding electrode is rapidly crushed at the moment when the sonic vibration is applied. As a result, even when ultrasonic vibration is applied to the protruding electrode, a sufficient contact area is ensured between the protruding electrode and the connection terminal of the substrate. A new surface that contributes to bonding can be efficiently generated, and a good bonding surface is formed.
- each protruding electrode with respect to each connection terminal on the substrate becomes uniform, so that ultrasonic vibration can be sufficiently applied to all the protruding electrodes, and between the protruding electrode and the connection terminal on the substrate. Can be strong.
- the productivity is higher than the conventional flip chip bonding method. Even if the electrode of the electronic component element is very small, the connection between the protruding electrode and the substrate is possible regardless of the height variation between the protruding electrodes and the warping of the substrate. A good joint surface can be formed between the terminals and high connection reliability and high quality can be ensured.
- the first pressure is applied so that a portion having a length of about one third from the tip of the protruding electrode. May be deformed.
- the protruding electrode it is possible to flatten the protruding electrode while ensuring a sufficient height of the protruding electrode. Since the height of the protruding electrode is sufficiently secured, it is possible to prevent the gap between the electronic component element and the substrate from becoming partially narrow due to the influence of the warp of the substrate. That is, in the sealing process after flip chip bonding, the problem that the fluidity of the sealing resin in the gap between the electronic component element and the substrate deteriorates and bubbles remain can be prevented.
- the above method can prevent distortion in the ultrasonic vibration direction to cause the protruding electrodes to be inclined and non-uniform in shape between the individual protruding electrodes, the electrode of the electronic component element and the substrate It is possible to form a strong joint surface with the connection terminal.
- the protruding electrode is a conductive two-stage bump including a first bump and a second bump stacked on the first bump.
- a part of the second bump may be deformed by applying the first pressure.
- the height of the protruding electrode is increased by making the protruding electrode into a two-step bump. For this reason, when the second bump is deformed during the first application step, the height of the two-step bumps can be made uniform and the height of the two-step bumps can be adjusted to the warp of the substrate. That is, even if there is a variation in the height between each two-step bump, or the substrate is warped or undulated, the height variation between each two-step bump in the electronic component element, the warpage of the substrate, It is possible to cancel out the undulations and align the heights of the two-step bumps, thereby suppressing the variation in height between the two-step bumps. Then, since the second bumps bite into the first bumps in the second application step, the first bumps and the second bumps are adhered, and a good bonding surface is formed between the connection terminals of the substrate.
- connection terminal of the substrate is larger than the electrode of the electronic component element
- the first bump is lower than the second bump
- the bump diameter may be smaller than that of the second bump
- the deformation of the second bump becomes the main factor of the bonding, and the first bump that is not excessively deformed can serve as a stopper for ensuring the overall height of the bump.
- the second bump since the first bump cannot be excessively deformed from the viewpoint of damage to the electrodes of the electronic component element, the second bump is a main cause of deformation.
- the height of the first bump is made lower than the height of the second bump to eliminate the grace of deformation of the first bump, that is, not to deform.
- the second bump is a main cause of deformation and bonding, it is desirable that the connection terminal of the substrate facing the second bump is larger than the electrode of the electronic component element.
- the method for manufacturing a solid-state imaging device according to one embodiment of the present invention can be realized by including any of the flip-chip bonding methods described above.
- the flip-chip bonding method according to the present invention is a method for bonding a solid-state imaging device (photoelectric conversion device) such as a CCD (charge-coupled device) in an imaging device widely used for in-vehicle use, information communication terminal use, medical use, and the like. Sometimes it can be suitably used.
- a solid-state imaging device photoelectric conversion device
- CCD charge-coupled device
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Abstract
Description
本実施形態では、半導体素子および固体撮像素子等の電子部品素子の電極と、回路基板およびパッケージキャリア等の基板の電極(接合端子)とをバンプ(突起電極)を介して、超音波を併用したフリップチップ接合を行うことによって、電子部品素子の電極と基板の接合端子とを接合する方法(超音波フリップチップ接合方法)が提供される。まず、本実施形態に係るフリップチップ接合の概略について、図2を参照して説明する。図2は、本実施形態に係るフリップチップ接合装置10の概略図である。
電子部品素子に形成される電極は、電子部品素子の実装面上に、例えばアルミニウム(Al)-ケイ素(Si)からなる導電層をスパッタリング等によって形成されたものである。電子部品素子に形成される電極の寸法を例示すると、大きさが70μm角であり、厚みが1μmである。なお、電子部品素子の大きさは、基板の開口部よりも少し大きい大きさとなっている。
本実施形態に係るフリップチップ接合方法は、以下の工程からなる。
(a)電子部品素子と基板との位置合わせを行う位置合わせ工程
(b)位置合わせ工程の後、電子部品素子および基板の少なくともいずれか一方側から加熱しながら、電子部品素子の電極を、バンプ(突起電極)を介して基板の電極(接続端子)に接触させる接触工程
(c)接触工程の後、バンプに、超音波振動を印加せずに、バンプを構成するバルク材料の降伏応力以上の第1圧力を印加することによって、バンプの一部を変形させる第1印加工程
(d)第1圧力の印加を低下もしくは停止する低下・停止工程
(e)低下・停止工程の後、バンプに、所定の超音波振動を印加しながら、バンプを構成するバルク材料の降伏応力以上の第2圧力になるまで圧力を段階的に印加する第2印加工程
以上の各工程について、図1、図3、および図4を参照して詳細に説明する。図1中の(a)は、位置合わせ工程時のバンプの状態を示す図であり、(b)は、接触工程時のバンプの状態を示す図であり、(c)は、第1印加工程時のバンプの状態を示す図である。図3中の(a)は、フリップチップ接合前のバンプの状態を示す図であり、(b)は、第1印加工程後のバンプの状態を示す図であり、(c)は、第2印加工程後のバンプの状態を示す図である。図4は、本実施形態に係るフリップチップ接合方法における印加圧力および印加超音波振動の推移を示しており、(a)は、印加する圧力の推移を示しており、(b)は、印加する超音波振動振幅の推移を示している。
電子部品に使用される基板4は開口部を有しているため、基板4において電子部品素子1を搭載する面は完全な平面ではなく、うねりが生じて部分的に数十μmの高低差が存在する場合が多い。そのため、接合時に電子部品素子1を基板4に搭載した状態では、バンプ2と基板4の電極5との当接面は、必ずしもすべてのバンプ2が均一に当接した状態とはならず、部分的にバンプ2が電極5と接触していない、いわゆる片当りの状態となる場合がある。この状態のままバンプ2に対して超音波振動を印加すると、基板4の電極5と接触状態の良い一部のバンプ2に超音波振動が集中し、さらに部分的にバンプ2と電極5との間に隙間があるために電子部品素子1と基板4との当接面にガタが生じる。その結果、正常な接合が行われず、電子部品素子1と基板4との間に傾きが発生する可能性が高くなる。傾きを有する電子部品は最終的に不良品となる。
本発明の一態様に係るフリップチップ接合方法によれば、第1印加工程において、バンプを平坦化することにより、すべてのバンプの寸法が揃う。特に本発明の一態様では、バンプに対して超音波振動を印加していないので、超音波振動に起因したバンプの剛性の低下による過度の変形を回避することができる。
本発明の一態様に係るフリップチップ接合方法は、電子部品素子の電極を、突起電極を介して基板の接続端子に接合させるフリップチップ接合方法であって、上記電子部品素子と上記基板との位置合わせを行う位置合わせ工程と、上記位置合わせ工程の後、上記電子部品素子の電極および上記基板の接続端子の少なくともいずれか一方を加熱しながら、上記電子部品素子の電極を、上記突起電極を介して上記基板の接続端子に接触させる接触工程と、上記接触工程の後、上記突起電極に、超音波振動を印加せずに、上記突起電極を構成するバルク材料の降伏応力以上の第1圧力を印加することによって、上記突起電極の一部を変形させる第1印加工程と、上記第1圧力の印加を低下もしくは停止する低下・停止工程と、上記低下・停止工程の後、上記突起電極に、所定の超音波振動を印加しながら、上記突起電極を構成するバルク材料の降伏応力以上の第2圧力になるまで圧力を段階的に印加する第2印加工程とを含んでいる。
2 バンプ
3 ツール
4 基板
5 電極
6 第1バンプ
7 第2バンプ
8 2段バンプ
9 ステージ
10 フリップチップ接合装置
11 ツール駆動部
12 ステージ駆動部
13 超音波振動子
16 制御系
Claims (5)
- 電子部品素子の電極を、突起電極を介して基板の接続端子に接合させるフリップチップ接合方法であって、
上記電子部品素子と上記基板との位置合わせを行う位置合わせ工程と、
上記位置合わせ工程の後、上記電子部品素子の電極および上記基板の接続端子の少なくともいずれか一方を加熱しながら、上記電子部品素子の電極を、上記突起電極を介して上記基板の接続端子に接触させる接触工程と、
上記接触工程の後、上記突起電極に、超音波振動を印加せずに、上記突起電極を構成するバルク材料の降伏応力以上の第1圧力を印加することによって、上記突起電極の一部を変形させる第1印加工程と、
上記第1圧力の印加を低下もしくは停止する低下・停止工程と、
上記低下・停止工程の後、上記突起電極に、所定の超音波振動を印加しながら、上記突起電極を構成するバルク材料の降伏応力以上の第2圧力になるまで圧力を段階的に印加する第2印加工程とを含むことを特徴とするフリップチップ接合方法。 - 上記第1印加工程においては、上記第1圧力を印加することによって、上記突起電極の先端から略3分の1の長さの部分を変形させることを特徴とする請求項1に記載のフリップチップ接合方法。
- 上記突起電極は、第1バンプおよび当該第1バンプの上に積層された第2バンプからなる導電性の2段バンプであり、
上記第1印加工程においては、上記第1圧力を印加することによって、上記第2バンプの一部を変形させることを特徴とする請求項1に記載のフリップチップ接合方法。 - 上記基板の接続端子は、上記電子部品素子の電極よりも大きく、
上記第1バンプは、上記第2バンプよりも高さが低く、なおかつ、上記第2バンプよりもバンプ径が小さいことを特徴とする請求項3に記載のフリップチップ接合方法。 - 請求項1~4のいずれか1項に記載のフリップチップ接合方法を含むことを特徴とする固体撮像装置の製造方法。
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CN201380059783.4A CN104798187B (zh) | 2012-11-16 | 2013-10-02 | 倒装接合方法、和特征在于包含该倒装接合方法的固体摄像装置的制造方法 |
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