KR19990083124A - 상호 접속 구조 및 그 형성 방법 - Google Patents
상호 접속 구조 및 그 형성 방법 Download PDFInfo
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- KR19990083124A KR19990083124A KR1019990012728A KR19990012728A KR19990083124A KR 19990083124 A KR19990083124 A KR 19990083124A KR 1019990012728 A KR1019990012728 A KR 1019990012728A KR 19990012728 A KR19990012728 A KR 19990012728A KR 19990083124 A KR19990083124 A KR 19990083124A
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- Prior art keywords
- copper
- seed layer
- copper alloy
- electronic device
- metal
- Prior art date
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- 239000010949 copper Substances 0.000 title claims abstract description 163
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 142
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 142
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 53
- 239000002184 metal Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 122
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 102
- 239000004020 conductor Substances 0.000 claims abstract description 78
- 238000000151 deposition Methods 0.000 claims abstract description 40
- 239000000956 alloy Substances 0.000 claims abstract description 34
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 33
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000004891 communication Methods 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims description 46
- 238000009792 diffusion process Methods 0.000 claims description 39
- 239000011135 tin Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 229910052718 tin Inorganic materials 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 229910052721 tungsten Inorganic materials 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 229910052801 chlorine Inorganic materials 0.000 claims description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- 229910052715 tantalum Inorganic materials 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052758 niobium Inorganic materials 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 12
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052790 beryllium Inorganic materials 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 238000001771 vacuum deposition Methods 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 8
- 229910004200 TaSiN Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052793 cadmium Inorganic materials 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 7
- 229910052691 Erbium Inorganic materials 0.000 claims description 7
- 229910052693 Europium Inorganic materials 0.000 claims description 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 7
- 229910052689 Holmium Inorganic materials 0.000 claims description 7
- 229910052779 Neodymium Inorganic materials 0.000 claims description 7
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 7
- 229910052775 Thulium Inorganic materials 0.000 claims description 7
- 229910010037 TiAlN Inorganic materials 0.000 claims description 7
- 229910008482 TiSiN Inorganic materials 0.000 claims description 7
- 229910008807 WSiN Inorganic materials 0.000 claims description 7
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 229910052702 rhenium Inorganic materials 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- 229910052772 Samarium Inorganic materials 0.000 claims description 6
- 229910004166 TaN Inorganic materials 0.000 claims description 6
- 229910052771 Terbium Inorganic materials 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052762 osmium Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 239000005749 Copper compound Substances 0.000 claims description 5
- 150000001880 copper compounds Chemical class 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- 239000006104 solid solution Substances 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 238000005546 reactive sputtering Methods 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 238000013508 migration Methods 0.000 claims 1
- 230000005012 migration Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000010936 titanium Substances 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000011572 manganese Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
Claims (60)
- 전자 소자에 전기적 연결을 제공하는 상호 접속 구조물에 있어서,실질적으로 구리로 형성된 몸체와,상기 몸체와 상기 전자 소자 사이에 견고히 부착되도록 개재되어 상기 상호 접속 구조물의 전자 이동 저항(eletromigration resistance)을 개선하는 구리 합금 시드(seed)층을 포함하는 상호 접속 구조물.
- 제 1 항에 있어서,상기 구리 합금 시드층이 Sn, In, Zr, Ti, C, N, O, Cl, S로 구성된 그룹으로부터 선택된 적어도 하나의 구성 요소와 구리를 포함하는 상호 접속 구조물.
- 제 1 항에 있어서,상기 구리 합금 시드층이 약 0.1 nm와 약 100 nm 사이의 두께를 갖는 상호 접속 구조물.
- 제 1 항에 있어서,상기 구리 합금 시드층이 바람직하게 약 1 nm와 약 100 nm 사이의 두께를 갖는 상호 접속 구조물.
- 제 1 항에 있어서,확산 장벽층을 더 포함하며, 상기 확산 장벽층 상에 상기 구리 합금 시드층이 증착되는 상호 접속 구조물.
- 제 5 항에 있어서,상기 확산 장벽층이 Ta, TaN, W, TaSiN, TiN, WN, WSiN, TiAlN, TiSiN으로 구성된 그룹으로부터 선택된 재료로 증착되는 상호 접속 구조물.
- 제 5 항에 있어서,상기 구리 합금 시드층이 스퍼터링, 이온화 스퍼터링(ionized sputtering), 화학 진공 증착, 증발, 전자화학적 수단으로 구성된 그룹으로부터 선택된 기법을 통해 상기 장벽층 상에 증착되는 상호 접속 구조물.
- 제 1 항에 있어서,상기 실질적으로 구리로 형성된 몸체가 약 0.001 내지 약 10 중량 퍼센트의 농도를 갖는 C, N, Cl, O, S로 구성된 그룹으로부터 선택된 적어도 하나의 합금 구성 요소와 구리로 형성되는 상호 접속 구조물.
- 제 1 항에 있어서,상기 구리 합금 시드층이 금속 화합물, 금속 고용체(metal solid solution) 혹은 두 금속상 혼합물(two-phase mixtures of metal phases)로 형성되는 상호 접속 구조물.
- 제 1 항에 있어서,상기 구리 합금 시드층은 약 0.25 내지 1.5 원자 %의 Sn 혹은 In을 포함하는 구리인 상호 접속 구조물.
- 제 1 항에 있어서,상기 구조물이 온 칩(on-chip) 혹은 오프 칩(off-chip)으로 사용되는 상호 접속 구조물.
- 제 1 항에 있어서,상기 구조물이 TAB, BGA 혹은 PGA에 대한 배선 리드(wiring lead), 비아(via), 라인(line), 스터드(stud)로 구성된 그룹으로부터 선택된 부재인 상호 접속 구조물.
- 제 1 항에 있어서,상기 구조물이 2와 10개 사이의 배선 레벨을 가진 다중 레벨 구조물인 상호 접속 구조물.
- 제 1 항에 있어서,상기 구조물이 기증착된 금속 실리사이드 혹은 W 스터드층 및 W 국부 상호 접속부 상에 형성되는 상호 접속 구조물.
- 전자 소자에 전기적 연결을 제공하는 상호 접속 구조물에 있어서,구리 도전체 몸체와,상기 구리 도전체 몸체와 상기 전자 소자 상에 형성된 확산 장벽층 사이에 견고히 부착되도록 개재되어, 상기 하부에 위치하는 확산 장벽층에 대한 부착성을 개선하는 구리 합금 시드층을 포함하며, 상기 구리 합금 시드층이 Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Pb, Dy, Ho, Er, Tm, Yb, Lu, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Si, Ge으로 구성된 그룹으로부터 선택된 적어도 하나의 구성 요소와 구리를 포함하는 상호 접속 구조물.
- 제 15 항에 있어서,상기 구리 합금 시드층이 상기 구리 도전체 몸체의 전기 저항율보다 큰 전기 저항율을 갖는 상호 접속 구조물.
- 제 15 항에 있어서,상기 구리 합금 시드층이 약 0.1 nm와 약 100 nm 사이의 두께를 갖는 상호 접속 구조물.
- 제 15 항에 있어서,실질적으로 구리로 형성된 상기 구리 도전체 몸체가 약 0.001과 약 10 중량 퍼센트 사이의 농도를 갖는 C, N, Cl, O로 구성된 그룹으로부터 선택된 적어도 하나의 합금 구성 요소와 구리로 형성되는 상호 접속 구조물.
- 제 15 항에 있어서,상기 구리 합금 시드층이 금속 화합물, 금속 고용체 혹은 두 금속상 혼합물로 형성되는 상호 접속 구조물.
- 제 15 항에 있어서,상기 구조물이 TAB, BGA 혹은 PGA에 대한 배선 리드, 비아, 라인, 스터드로 구성된 그룹으로부터 선택된 부재인 상호 접속 구조물.
- 제 15 항에 있어서,상기 구조물이 2와 10개 사이의 배선 레벨을 가진 다중 레벨 구조물인 상호 접속 구조물.
- 제 15 항에 있어서,상기 구조물이 기증착된 금속 실리사이드 상에 형성되는 상호 접속 구조물.
- 전자 소자에 전기적 연결을 제공하는 상호 접속 시스템에 있어서,구리 도전체 몸체와,상기 구리 도전체 몸체와 상기 전자 소자 사이에 견고히 부착되도록 개재되어 상기 전자 소자의 표면 특성을 개선하는 구리 합금 시드층을 포함하며, 상기 구리 합금 시드층이 B, O, N, P, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Ag, Au, Zn, Cd로 구성된 그룹으로부터 선택된 적어도 하나의 구성 요소와 구리를 포함하는 상호 접속 시스템.
- 제 23 항에 있어서,상기 구리 합금 시드층과 상기 전자 소자 사이에 개재된 확산 장벽층을 더 포함하는 상호 접속 시스템.
- 제 24 항에 있어서,상기 확산층이 Ti, Ta, Wb, Mo, TaN, W, WN, TiN, TaSiN, WSiN, TiAlN, TiSiN으로 구성된 그룹으로부터 선택된 재료로 증착되는 상호 접속 시스템.
- 제 23 항에 있어서,상기 구리 합금 시드층이 약 0.1 nm와 약 100 nm 사이의 두께를 갖는 상호 접속 시스템.
- 제 23 항에 있어서,상기 구조물이 TAB, BGA 혹은 PGA에 대한 배선 리드), 비아, 라인, 스터드로 구성된 그룹으로부터 선택된 부재인 상호 접속 시스템.
- 제 23 항에 있어서,실질적으로 구리로 형성된 상기 구리 도전체 몸체가 약 0.001과 약 10 중량 퍼센트 사이의 농도를 갖는 C, N, O, Cl, S로 구성된 그룹으로부터 선택된 적어도 하나의 합금 구성 요소와 구리로 형성되는 상호 접속 시스템.
- 제 23 항에 있어서,상기 구리 합금 시드층이 금속 화합물, 금속 고용체 혹은 두 금속상 혼합물로 형성되는 상호 접속 시스템.
- 전자 소자에 전기적 연결을 제공하는 상호 접속 시스템에 있어서,구리 도전체 몸체와,상기 구리 도전체 몸체와 상기 전자 소자 사이에 견고히 부착되도록 개재되어 있어 구리 도전체 증착 단계를 개선하는 금속 시드층을 포함하며, 구리 내에서의 가용성(solubility)이 매우 낮아서 사실상 구리 화합물이 형성될 수 없는 금속으로 상기 금속 시드층을 증착하는 상호 접속 시스템.
- 제 30 항에 있어서,상기 금속이 구리의 전기 저항율과 상당히 유사한 전기 저항율을 갖는 상호 접속 시스템.
- 제 30 항에 있어서,상기 금속은 Ag, Mo, W, Co로 구성된 그룹으로부터 선택되는 상호 접속 시스템.
- 제 30 항에 있어서,상기 금속 시드층이 약 0.1 nm와 약 100 nm 사이의 두께를 갖는 상호 접속 시스템.
- 제 30 항에 있어서,확산 장벽층을 더 포함하며, 상기 확산 장벽층 상에 상기 금속 시드층이 증착되는 상호 접속 시스템.
- 제 30 항에 있어서,상기 확산 장벽층은 Ti, Ta, Nb, Mo, TaN, W, WN, TiN, TaSiN, WSiN, TiAlN, TiSiN으로 구성된 그룹으로부터 선택된 재료로 증착되는 상호 접속 시스템.
- 제 30 항에 있어서,상기 구조물이 온 칩(on-chip) 혹은 오프 칩(off-chip)으로 사용되는 상호 접속 시스템.
- 제 30 항에 있어서,상기 구조물이 TAB, BGA 혹은 PGA에 대한 배선 리드, 비아, 라인, 스터드로 구성된 그룹으로부터 선택된 부재인 상호 접속 시스템.
- 제 30 항에 있어서,상기 구조물이 2와 10개 사이의 배선 레벨을 가진 다중 레벨 구조물인 상호 접속 시스템.
- 전자 소자에 전기적 연결을 제공하는 상호 접속 구조물을 형성하는 방법에 있어서,전자 소자 상에 구리 합금 시드층을 증착하는 단계와,상기 상호 접속 구조물의 전자 이동 저항이 개선되도록 상기 층에 견고히 부착되게 상기 구리 합금 시드층 상에 구리 도전체 몸체를 형성하는 단계를 포함하는 상호 접속 구조물 형성 방법.
- 제 39 항에 있어서,상기 구리 합금 시드층이 Sn, In, Zr, Ti, C, O, Cl, N, S로 구성된 그룹으로부터 선택된 적어도 하나의 구성 요소와 구리를 포함하는 상호 접속 구조물 형성 방법.
- 제 39 항에 있어서,반응성 혹은 비반응성 스퍼터링(non-reactive sputtering), 이온화 스퍼터링, 화학 진공 증착, 증발, 전자화학적 수단으로 구성된 그룹으로부터 선택된 기법으로 상기 구리 합금 시드층을 증착하는 상호 접속 구조물 형성 방법.
- 제 39 항에 있어서,상기 구리 도전체 몸체가 약 0.001과 약 10 중량 퍼센트 사이의 농도를 갖는 C, N, Cl, O로 구성된 그룹으로부터 선택된 적어도 하나의 합금 구성 요소와 구리로 형성되는 상호 접속 구조물 형성 방법.
- 제 39 항에 있어서,상기 구리 합금 시드층을 약 0.1 nm와 약 100 nm 사이의 두께로 증착하는 상호 접속 구조물 형성 방법.
- 제 39 항에 있어서,상기 구리 합금 시드층에 대한 증착 단계 이전에 상기 전자 소자 상에 확산 장벽층을 증착하는 단계를 더 포함하는 상호 접속 구조물 형성 방법.
- 제 44 항에 있어서,상기 확산 장벽층을 Ti, Ta, Nb, Mo, TaN, W, WN, TiN, TaSiN, WSiN, TiAlN, TiSiN으로 구성된 그룹으로부터 선택된 재료로 증착하는 상호 접속 구조물 형성 방법.
- 제 39 항에 있어서,상기 상호 접속 구조물을 2와 10개 사이의 배선 레벨을 가진 다중 레벨로 형성하는 상호 접속 구조물 형성 방법.
- 전자 소자와의 전기적 통신을 제공하며, 상기 소자에 대해 개선된 부착성을 갖는 상호 접속 구조물을 형성하는 방법에 있어서,상기 전자 소자 상에 구리 합금 시드층을 증착하되, 상기 시드층이 Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Si, Ge로 구성된 그룹으로부터 선택된 적어도 하나의 구성 요소와 구리를 포함하는 단계와,상기 구리 합금 시드층 상에 구리 도전체 몸체를 형성하는 단계를 포함하는 상호 접속 구조물 형성 방법.
- 제 47 항에 있어서,상기 구리 합금 시드층에 대한 증착 단계 이전에 상기 전자 소자 상에 확산 장벽층을 증착하는 단계를 더 포함하는 상호 접속 구조물 형성 방법.
- 제 48 항에 있어서,상기 확산 장벽층을 Ti, Ta, Nb, Mo, TaN, W, WN, TiN, TaSiN, WSiN, TiAlN, TiSiN으로 구성된 그룹으로부터 선택된 재료로 증착하는 상호 접속 구조물 형성 방법.
- 제 48 항에 있어서,스퍼터링, 이온화 스퍼터링, 화학 진공 증착, 증발, 전자화학적 수단으로 구성된 그룹으로부터 선택된 기법으로 상기 구리 합금 시드층을 증착하는 상호 접속 구조물 형성 방법.
- 제 47 항에 있어서,상기 구리 도전체 몸체가 약 0.001과 약 10 중량 퍼센트 사이의 농도를 갖는 C, Cl, N, O, S로 구성된 그룹으로부터 선택된 적어도 하나의 합금 구성 요소와 구리로 형성되는 상호 접속 구조물 형성 방법.
- 제 47 항에 있어서,상기 구리 합금 시드층을 약 0.1 nm와 약 100 nm 사이의 두께로 증착하는 상호 접속 구조물 형성 방법.
- 전자 소자와의 전기적 통신을 제공하는 도전체를 형성하는 방법에 있어서,상기 전자 소자 상에 구리 합금 시드층을 증착하는 단계와,상기 구리 합금 시드층의 상부에 견고히 부착되도록 약 0.001 내지 약 10 중량 퍼센트의 농도를 갖는 C, Cl, N, O, S로 구성된 그룹으로부터 선택된 적어도 하나의 합금 구성 요소와 구리로 도전체를 형성하는 단계를 포함하는 도전체 형성 방법.
- 제 53 항에 있어서,스퍼터링, 이온화 스퍼터링, 화학 진공 증착, 증발, 전자화학적 수단으로 구성된 그룹으로부터 선택된 기법으로 상기 구리 합금 시드층을 증착하는 도전체 형성 방법.
- 제 53 항에 있어서,상기 구리 합금 시드층을 약 0.1 nm와 약 100 nm 사이의 두께로 증착하는 도전체 형성 방법.
- 제 53 항에 있어서,상기 구리 금속 합금층에 대한 증착 단계 이전에, 상기 전자 소자 상에 확산 장벽층을 증착하는 단계를 더 포함하되, 상기 확산 장벽층을 Ti, TiN, Ta, Nb, Mo, TaN, W, WN, TaSiN, WSiN, TiAlN, TiSiN으로 구성된 그룹으로부터 선택된 재료로 증착하는 도전체 형성 방법.
- 전자 소자와의 전기적 통신을 제공하는 도전체를 형성하는 방법에 있어서,상기 전자 소자 상부에 금속 시드층을 증착하되, 상기 금속 시드층을 구리 내에서의 가용성과 구리와의 친화성이 매우 낮아서 구리 화합물이 형성될 수 없는 금속으로 증착하는 단계와,상기 금속 시드층의 상부에 구리 도전체 몸체를 견고히 부착되게 형성하는 단계를 포함하는 도전체 형성 방법.
- 제 57 항에 있어서,상기 금속 시드층을 Ag, Mo, W, Co로 구성된 그룹으로부터 선택된 금속으로 증착하는 도전체 형성 방법.
- 제 57 항에 있어서,상기 금속이 구리의 전기 저항율과 상당히 유사한 전기 저항율을 갖는 도전체 형성 방법.
- 제 57 항에 있어서,상기 금속 시드층이 약 0.1 nm와 약 100 nm 사이의 두께를 갖는 도전체 형성 방법.
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US09/067,851 | 1998-04-27 | ||
US09/067,851 US6181012B1 (en) | 1998-04-27 | 1998-04-27 | Copper interconnection structure incorporating a metal seed layer |
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KR100339179B1 KR100339179B1 (ko) | 2002-05-31 |
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EP (1) | EP0954027B1 (ko) |
JP (1) | JP3121589B2 (ko) |
KR (1) | KR100339179B1 (ko) |
CN (1) | CN1150619C (ko) |
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JP3121589B2 (ja) | 2001-01-09 |
DE69929496T2 (de) | 2006-08-24 |
US6181012B1 (en) | 2001-01-30 |
EP0954027A1 (en) | 1999-11-03 |
EP0954027B1 (en) | 2006-01-18 |
MY126479A (en) | 2006-10-31 |
JPH11340229A (ja) | 1999-12-10 |
CN1150619C (zh) | 2004-05-19 |
CN1233856A (zh) | 1999-11-03 |
TW418517B (en) | 2001-01-11 |
KR100339179B1 (ko) | 2002-05-31 |
SG77224A1 (en) | 2000-12-19 |
DE69929496D1 (de) | 2006-04-06 |
US6399496B1 (en) | 2002-06-04 |
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