KR102719739B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR102719739B1
KR102719739B1 KR1020227037566A KR20227037566A KR102719739B1 KR 102719739 B1 KR102719739 B1 KR 102719739B1 KR 1020227037566 A KR1020227037566 A KR 1020227037566A KR 20227037566 A KR20227037566 A KR 20227037566A KR 102719739 B1 KR102719739 B1 KR 102719739B1
Authority
KR
South Korea
Prior art keywords
layer
oxide
oxide semiconductor
transistor
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227037566A
Other languages
English (en)
Korean (ko)
Other versions
KR20220149630A (ko
Inventor
준 고야마
순페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20220149630A publication Critical patent/KR20220149630A/ko
Application granted granted Critical
Publication of KR102719739B1 publication Critical patent/KR102719739B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L27/1225
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13454Drivers integrated on the active matrix substrate
    • H01L29/045
    • H01L29/66742
    • H01L29/66969
    • H01L29/7869
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • H10D62/405Orientations of crystalline planes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0221Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13452Conductors connecting driver circuitry and terminals of panels
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0421Structural details of the set of electrodes
    • G09G2300/0426Layout of electrodes and connections
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0286Details of a shift registers arranged for use in a driving circuit
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/08Details of timing specific for flat panels, other than clock recovery
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02Details of power systems and of start or stop of display operation
    • G09G2330/021Power management, e.g. power saving
    • G09G2330/023Power management, e.g. power saving using energy recovery or conservation
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266Details of drivers for scan electrodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275Details of drivers for data electrodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • G09G3/3677Details of drivers for scan electrodes suitable for active matrices only
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3685Details of drivers for data electrodes
    • G09G3/3688Details of drivers for data electrodes suitable for active matrices only

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
KR1020227037566A 2009-12-04 2010-11-04 반도체 장치 Active KR102719739B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009276918 2009-12-04
JPJP-P-2009-276918 2009-12-04
PCT/JP2010/070062 WO2011068017A1 (en) 2009-12-04 2010-11-04 Display device and electronic device including the same
KR1020217038353A KR102462239B1 (ko) 2009-12-04 2010-11-04 반도체 장치

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020217038353A Division KR102462239B1 (ko) 2009-12-04 2010-11-04 반도체 장치

Publications (2)

Publication Number Publication Date
KR20220149630A KR20220149630A (ko) 2022-11-08
KR102719739B1 true KR102719739B1 (ko) 2024-10-21

Family

ID=44114873

Family Applications (6)

Application Number Title Priority Date Filing Date
KR1020227037566A Active KR102719739B1 (ko) 2009-12-04 2010-11-04 반도체 장치
KR1020217038353A Active KR102462239B1 (ko) 2009-12-04 2010-11-04 반도체 장치
KR1020127017051A Active KR101833198B1 (ko) 2009-12-04 2010-11-04 표시 장치 및 이를 포함하는 전자 기기
KR1020207025239A Active KR102333270B1 (ko) 2009-12-04 2010-11-04 반도체 장치
KR1020197023002A Active KR102153034B1 (ko) 2009-12-04 2010-11-04 반도체 장치
KR1020187004920A Active KR102010752B1 (ko) 2009-12-04 2010-11-04 표시 장치

Family Applications After (5)

Application Number Title Priority Date Filing Date
KR1020217038353A Active KR102462239B1 (ko) 2009-12-04 2010-11-04 반도체 장치
KR1020127017051A Active KR101833198B1 (ko) 2009-12-04 2010-11-04 표시 장치 및 이를 포함하는 전자 기기
KR1020207025239A Active KR102333270B1 (ko) 2009-12-04 2010-11-04 반도체 장치
KR1020197023002A Active KR102153034B1 (ko) 2009-12-04 2010-11-04 반도체 장치
KR1020187004920A Active KR102010752B1 (ko) 2009-12-04 2010-11-04 표시 장치

Country Status (5)

Country Link
US (9) US8247813B2 (cg-RX-API-DMAC7.html)
JP (11) JP5778919B2 (cg-RX-API-DMAC7.html)
KR (6) KR102719739B1 (cg-RX-API-DMAC7.html)
TW (3) TWI654688B (cg-RX-API-DMAC7.html)
WO (1) WO2011068017A1 (cg-RX-API-DMAC7.html)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2486593B1 (en) 2009-10-09 2017-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102128972B1 (ko) 2009-11-06 2020-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
CN105206514B (zh) 2009-11-28 2018-04-10 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
KR102719739B1 (ko) 2009-12-04 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
KR101770976B1 (ko) * 2009-12-11 2017-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101883802B1 (ko) 2009-12-28 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
WO2011108346A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5458443B2 (ja) 2010-09-14 2014-04-02 株式会社ジャパンディスプレイ タッチ検出機能付き表示装置、および電子機器
KR101900525B1 (ko) 2011-03-18 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
KR101940570B1 (ko) 2011-05-13 2019-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 El 표시 장치 및 그 전자 기기
JP6110075B2 (ja) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 表示装置
KR102432070B1 (ko) 2011-06-08 2022-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2013011844A1 (en) 2011-07-15 2013-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR101953724B1 (ko) * 2011-08-26 2019-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 모듈, 발광 장치, 발광 모듈의 제작 방법, 발광 장치의 제작 방법
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN107068766B (zh) 2011-09-29 2020-12-29 株式会社半导体能源研究所 半导体装置
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102254731B1 (ko) 2012-04-13 2021-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6076612B2 (ja) * 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 半導体装置
KR102119914B1 (ko) * 2012-05-31 2020-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6043244B2 (ja) * 2012-06-06 2016-12-14 株式会社神戸製鋼所 薄膜トランジスタ
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
CN102856392B (zh) * 2012-10-09 2015-12-02 深圳市华星光电技术有限公司 薄膜晶体管主动装置及其制作方法
US20140151095A1 (en) * 2012-12-05 2014-06-05 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method for manufacturing the same
TW201442249A (zh) * 2013-02-13 2014-11-01 Idemitsu Kosan Co 薄膜電晶體
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
KR102089326B1 (ko) * 2013-10-01 2020-03-17 엘지디스플레이 주식회사 표시장치
JP2015115469A (ja) 2013-12-12 2015-06-22 ソニー株式会社 薄膜トランジスタ、表示装置、電子機器、および薄膜トランジスタの製造方法
US9627413B2 (en) * 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR102127240B1 (ko) * 2013-12-13 2020-06-26 엘지디스플레이 주식회사 표시장치 및 그 신호라인, 그 제조방법
CN105917450A (zh) * 2014-01-15 2016-08-31 株式会社神户制钢所 薄膜晶体管
FR3037438B1 (fr) * 2015-06-09 2017-06-16 Soitec Silicon On Insulator Procede de fabrication d'un element semi-conducteur comprenant une couche de piegeage de charges
US10302019B2 (en) * 2016-03-03 2019-05-28 General Electric Company High pressure compressor augmented bleed with autonomously actuated valve
CN120111944A (zh) * 2016-03-22 2025-06-06 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
FR3058561B1 (fr) 2016-11-04 2018-11-02 Soitec Procede de fabrication d'un element semi-conducteur comprenant un substrat hautement resistif
US10866475B2 (en) 2017-03-17 2020-12-15 Sharp Kabushiki Kaisha Active matrix substrate and display device
WO2018181296A1 (ja) * 2017-03-29 2018-10-04 シャープ株式会社 チャネルエッチ型薄膜トランジスタの製造方法
CN107544185B (zh) * 2017-09-25 2020-08-18 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置
CN107862998B (zh) * 2017-11-09 2020-05-19 深圳市华星光电半导体显示技术有限公司 一种柔性goa显示面板及其制作方法
CN107919365B (zh) * 2017-11-21 2019-10-11 深圳市华星光电半导体显示技术有限公司 背沟道蚀刻型tft基板及其制作方法
JPWO2019111105A1 (ja) 2017-12-06 2020-12-03 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US20190280052A1 (en) * 2018-03-12 2019-09-12 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for manufacturing a touch-control panel and oled touch-control apparauts
WO2019224655A1 (ja) * 2018-05-25 2019-11-28 株式会社半導体エネルギー研究所 表示装置および電子機器
TWI699086B (zh) * 2019-01-24 2020-07-11 研能科技股份有限公司 微機電泵模組
TWI693785B (zh) * 2019-01-24 2020-05-11 研能科技股份有限公司 微機電泵模組
TWI697192B (zh) * 2019-01-24 2020-06-21 研能科技股份有限公司 微機電泵模組
CN113785346A (zh) * 2019-05-10 2021-12-10 株式会社半导体能源研究所 显示装置
KR102840468B1 (ko) 2019-07-16 2025-07-29 삼성전자주식회사 반도체 장치
KR20240095556A (ko) * 2022-11-30 2024-06-26 삼성디스플레이 주식회사 표시 장치
KR20240134617A (ko) * 2023-03-02 2024-09-10 삼성전자주식회사 디스플레이 장치
CN118884712A (zh) * 2024-08-14 2024-11-01 业桓科技(成都)有限公司 光学系统及头戴式显示设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006133762A (ja) 2004-10-08 2006-05-25 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2007096055A (ja) 2005-09-29 2007-04-12 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法

Family Cites Families (157)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP3881407B2 (ja) * 1996-07-31 2007-02-14 Hoya株式会社 導電性酸化物薄膜、この薄膜を有する物品及びその製造方法
US5859630A (en) 1996-12-09 1999-01-12 Thomson Multimedia S.A. Bi-directional shift register
JP3945887B2 (ja) * 1998-01-30 2007-07-18 Hoya株式会社 導電性酸化物薄膜を有する物品及びその製造方法
JP2000026119A (ja) 1998-07-09 2000-01-25 Hoya Corp 透明導電性酸化物薄膜を有する物品及びその製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
WO2002016679A1 (en) * 2000-08-18 2002-02-28 Tohoku Techno Arch Co., Ltd. Polycrystalline semiconductor material and method of manufacture thereof
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 LnCuO(S,Se,Te)単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
TWI265636B (en) 2002-06-21 2006-11-01 Sanyo Electric Co Method for producing thin film transistor
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
GB2397710A (en) 2003-01-25 2004-07-28 Sharp Kk A shift register for an LCD driver, comprising reset-dominant RS flip-flops
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005150203A (ja) 2003-11-12 2005-06-09 Matsushita Electric Ind Co Ltd 電界効果トランジスタ及び相補型電界効果トランジスタ並びにこれらの製造方法
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
KR20070116889A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 박막의 기상성막방법
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
JP4713192B2 (ja) 2004-03-25 2011-06-29 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US7476572B2 (en) 2004-03-25 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
JP4583797B2 (ja) 2004-04-14 2010-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US7622338B2 (en) 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7470604B2 (en) 2004-10-08 2008-12-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
AU2005302964B2 (en) 2004-11-10 2010-11-04 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
CN101057333B (zh) 2004-11-10 2011-11-16 佳能株式会社 发光器件
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
EP2453480A2 (en) 2004-11-10 2012-05-16 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機el表示装置およびその製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
JP5089139B2 (ja) * 2005-11-15 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20090130089A (ko) 2005-11-15 2009-12-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
WO2007080813A1 (en) 2006-01-07 2007-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic device having the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ZnOフィルム及びこれを用いたTFTの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP5015473B2 (ja) 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタアレイ及びその製法
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ZnO TFT
JP5271504B2 (ja) * 2006-04-28 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
US20070252233A1 (en) 2006-04-28 2007-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
WO2007142167A1 (en) 2006-06-02 2007-12-13 Kochi Industrial Promotion Center Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof
US20070287221A1 (en) 2006-06-12 2007-12-13 Xerox Corporation Fabrication process for crystalline zinc oxide semiconductor layer
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
US7906415B2 (en) * 2006-07-28 2011-03-15 Xerox Corporation Device having zinc oxide semiconductor and indium/zinc electrode
JP4609797B2 (ja) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
TWI675358B (zh) 2006-09-29 2019-10-21 日商半導體能源研究所股份有限公司 顯示裝置和電子裝置
JP4932415B2 (ja) 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 半導体装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7511343B2 (en) 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
JP2008116652A (ja) * 2006-11-02 2008-05-22 Seiko Epson Corp 配線基板およびその製造方法、並びに電子機器
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
US8143115B2 (en) 2006-12-05 2012-03-27 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
TWI478347B (zh) 2007-02-09 2015-03-21 Idemitsu Kosan Co A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
TWI487118B (zh) 2007-03-23 2015-06-01 Idemitsu Kosan Co Semiconductor device
JP5197058B2 (ja) 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
JP5043499B2 (ja) * 2007-05-02 2012-10-10 財団法人高知県産業振興センター 電子素子及び電子素子の製造方法
WO2008136505A1 (ja) * 2007-05-08 2008-11-13 Idemitsu Kosan Co., Ltd. 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法
JP5215589B2 (ja) 2007-05-11 2013-06-19 キヤノン株式会社 絶縁ゲート型トランジスタ及び表示装置
JP5164427B2 (ja) * 2007-05-11 2013-03-21 株式会社ジャパンディスプレイウェスト 半導体装置およびその駆動方法、表示装置およびその駆動方法
JP4462289B2 (ja) 2007-05-18 2010-05-12 ソニー株式会社 半導体層の成長方法および半導体発光素子の製造方法
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ZnO 계 박막 트랜지스터 및 그 제조방법
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
JP5354999B2 (ja) 2007-09-26 2013-11-27 キヤノン株式会社 電界効果型トランジスタの製造方法
JP2009135448A (ja) 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
US7768008B2 (en) 2007-11-13 2010-08-03 Toppan Printing Co., Ltd. Thin film transistor, method for manufacturing the same and display using the same
JP5215158B2 (ja) * 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP5219529B2 (ja) 2008-01-23 2013-06-26 キヤノン株式会社 電界効果型トランジスタ及び、該電界効果型トランジスタを備えた表示装置
JP4555358B2 (ja) 2008-03-24 2010-09-29 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
JP2009231664A (ja) * 2008-03-25 2009-10-08 Idemitsu Kosan Co Ltd 電界効果トランジスタ及びその製造方法
KR100941850B1 (ko) 2008-04-03 2010-02-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP2009267399A (ja) 2008-04-04 2009-11-12 Fujifilm Corp 半導体装置,半導体装置の製造方法,表示装置及び表示装置の製造方法
KR100963027B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR100963026B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5345456B2 (ja) 2008-08-14 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタ
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5606682B2 (ja) 2009-01-29 2014-10-15 富士フイルム株式会社 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法
US8330702B2 (en) * 2009-02-12 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit, display device, and electronic device
JP4415062B1 (ja) 2009-06-22 2010-02-17 富士フイルム株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP4571221B1 (ja) 2009-06-22 2010-10-27 富士フイルム株式会社 Igzo系酸化物材料及びigzo系酸化物材料の製造方法
KR102719739B1 (ko) * 2009-12-04 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2011138934A (ja) 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
JP2011187506A (ja) 2010-03-04 2011-09-22 Sony Corp 薄膜トランジスタおよびその製造方法、並びに表示装置
JP2012160679A (ja) 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器
FR2982887B1 (fr) 2011-11-18 2014-01-31 Coatex Sas Polymeres faiblement anioniques pour sauces de couchage destinees a des papiers pour impression de type jet d'encre

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006133762A (ja) 2004-10-08 2006-05-25 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2007096055A (ja) 2005-09-29 2007-04-12 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法

Also Published As

Publication number Publication date
JP7635332B2 (ja) 2025-02-25
KR20210144959A (ko) 2021-11-30
JP6553258B2 (ja) 2019-07-31
US20150021600A1 (en) 2015-01-22
JP2016219824A (ja) 2016-12-22
US20240055436A1 (en) 2024-02-15
JP7039742B2 (ja) 2022-03-22
JP2022075780A (ja) 2022-05-18
JP6370979B2 (ja) 2018-08-08
JP5778919B2 (ja) 2015-09-16
US20170084638A1 (en) 2017-03-23
US10840268B2 (en) 2020-11-17
KR20220149630A (ko) 2022-11-08
TWI654688B (zh) 2019-03-21
KR102153034B1 (ko) 2020-09-07
JP7362811B2 (ja) 2023-10-17
JP2024012304A (ja) 2024-01-30
US8247813B2 (en) 2012-08-21
KR102462239B1 (ko) 2022-11-03
JP2015046613A (ja) 2015-03-12
KR101833198B1 (ko) 2018-03-02
JP2018174344A (ja) 2018-11-08
JP6840193B2 (ja) 2021-03-10
JP6211149B2 (ja) 2017-10-11
TW201724284A (zh) 2017-07-01
US20120012847A1 (en) 2012-01-19
KR102010752B1 (ko) 2019-08-14
KR20180021237A (ko) 2018-02-28
JP2025087713A (ja) 2025-06-10
JP5978342B2 (ja) 2016-08-24
US20200052004A1 (en) 2020-02-13
JP2015167237A (ja) 2015-09-24
US20250151408A1 (en) 2025-05-08
TWI584385B (zh) 2017-05-21
US9991286B2 (en) 2018-06-05
US20180269233A1 (en) 2018-09-20
TWI527123B (zh) 2016-03-21
WO2011068017A1 (en) 2011-06-09
KR20190095533A (ko) 2019-08-14
US8866138B2 (en) 2014-10-21
US20220173129A1 (en) 2022-06-02
KR20120092688A (ko) 2012-08-21
JP2019186564A (ja) 2019-10-24
US20120305912A1 (en) 2012-12-06
KR20200105971A (ko) 2020-09-09
US9721971B2 (en) 2017-08-01
JP2018026572A (ja) 2018-02-15
TW201612989A (en) 2016-04-01
JP2011139056A (ja) 2011-07-14
JP5735692B2 (ja) 2015-06-17
KR102333270B1 (ko) 2021-12-02
JP2021093538A (ja) 2021-06-17
TW201142953A (en) 2011-12-01
US11728349B2 (en) 2023-08-15

Similar Documents

Publication Publication Date Title
JP7362811B2 (ja) 表示装置

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20221027

Application number text: 1020217038353

Filing date: 20211124

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20230630

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20240722

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20241016

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20241017

End annual number: 3

Start annual number: 1

PG1601 Publication of registration