JP2011139056A - 表示装置およびそれを用いた電子機器 - Google Patents
表示装置およびそれを用いた電子機器 Download PDFInfo
- Publication number
- JP2011139056A JP2011139056A JP2010269522A JP2010269522A JP2011139056A JP 2011139056 A JP2011139056 A JP 2011139056A JP 2010269522 A JP2010269522 A JP 2010269522A JP 2010269522 A JP2010269522 A JP 2010269522A JP 2011139056 A JP2011139056 A JP 2011139056A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transistor
- oxide semiconductor
- oxide
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 213
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 230000005669 field effect Effects 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 abstract description 145
- 238000010438 heat treatment Methods 0.000 abstract description 85
- 239000000463 material Substances 0.000 abstract description 64
- 239000010410 layer Substances 0.000 description 403
- 239000010408 film Substances 0.000 description 114
- 238000000034 method Methods 0.000 description 53
- 229910007541 Zn O Inorganic materials 0.000 description 43
- 239000004973 liquid crystal related substance Substances 0.000 description 42
- 239000012298 atmosphere Substances 0.000 description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 25
- 239000011521 glass Substances 0.000 description 25
- 239000001301 oxygen Substances 0.000 description 25
- 229910052760 oxygen Inorganic materials 0.000 description 25
- 230000008569 process Effects 0.000 description 25
- 238000004544 sputter deposition Methods 0.000 description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 229910044991 metal oxide Inorganic materials 0.000 description 22
- 150000004706 metal oxides Chemical class 0.000 description 22
- 230000006870 function Effects 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 239000001257 hydrogen Substances 0.000 description 18
- 229910052739 hydrogen Inorganic materials 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000000123 paper Substances 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 239000000969 carrier Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 11
- 239000011241 protective layer Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 239000012071 phase Substances 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000003094 microcapsule Substances 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000005070 sampling Methods 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 6
- 229910019092 Mg-O Inorganic materials 0.000 description 6
- 229910019395 Mg—O Inorganic materials 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 239000000945 filler Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 239000012798 spherical particle Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000001272 nitrous oxide Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 206010052128 Glare Diseases 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910001849 group 12 element Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000000838 magnetophoresis Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/08—Details of timing specific for flat panels, other than clock recovery
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
- G09G2330/023—Power management, e.g. power saving using energy recovery or conservation
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3275—Details of drivers for data electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Recrystallisation Techniques (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
【解決手段】下地部材上に、第1の酸化物部材を形成し、第1の加熱処理を行って表面から内部に向かって結晶成長し、下地部材に少なくとも一部接する第1の酸化物結晶部材を形成し、第1の酸化物結晶部材上に第2の酸化物部材を形成し、第2の加熱処理を行って第1の酸化物結晶部材を種として結晶成長させて第2の酸化物結晶部材を設ける積層酸化物材料を用いて高移動度のトランジスタを形成し、それを用いて同一基板上にドライバ回路を形成する。
【選択図】図6
Description
図4に本発明の実施形態を示す。図4(A)はガラス基板1501上に、画素部1502、ゲートドライバ1503、1504を内蔵し、ソース線駆動にアナログスイッチ1505を内蔵した表示装置である。ソース線駆動にアナログスイッチ1505を使用するのは以下の理由による。例えばフルハイビジョン表示装置の場合ソース信号線は1920xRGBの5760本存在する。ソースドライバを同一基板上に形成しない場合は、この端子にそれぞれソースドライバの端子が接続される。そのため、機械的な衝撃などにより、端子の接触不良が発生しやすいという問題があった。端子を減らすことが接触不良低減に有効である。そこでアナログスイッチアレイを同一基板上に形成し、RGBの各端子を時分割で選択的にソースドライバに接続し、端子数を減らすことを目的としている。
図6にソースドライバを内蔵した表示装置の実施形態を示す。図6(A)に示すのはガラス基板1701上に画素部1702、ゲートドライバ1703、1704、ソースドライバ1705を内蔵した例である。ゲートドライバ1703、1704、ソースドライバ1705にはFPC1706、1707より信号が供給される。ゲートドライバ1703、1704を表示装置の左右両側に配置し、画素を駆動することによって、片側の場合の半分の駆動能力で駆動することが可能である。
ソース線駆動にアナログスイッチを使用した場合の計算結果を以下に示す。計算は表示装置を100インチの液晶表示装置、フレーム周波数を240Hz(4倍速)の場合を想定している。前述したように4倍速ではソース線の書き込みを0.7μs以下でおこなう必要がある。このときのサンプリング用アナログスイッチに用いるトランジスタ素子サイズはL/W=3μm/1500μm、電界効果移動度は100cm2/Vs、しきい値1.5Vとした。そして、ソース信号線のシート抵抗を0.01Ω/□、ソース線抵抗を2.08KΩ、ソース線容量を18.5pF、線幅6μmとした。そしてソース線電位が期待値の99.9%まで書き込みができることを目標としている。
また、ソース線駆動にシフトレジスタ型ソースドライバを使用した場合の計算結果を示す。シフトレジスタは図9に示すようなセットリセット型のシフトレジスタを用いた。また、ソースドライバは図6(B)に示すような配置を仮定し駆動をおこなうものとした。サンプリングは960点同時サンプリングとしている。フルハイビジョンの4分の1の領域を1つのソースドライバで書き込むため、サンプリングすべき点は960xRGB=2880点である。これを960点同時サンプリングするため必要なシフトレジスタの段数は30段となる。そのタイミングチャートを図10(A)に示す。また図10(A)にて設定される期間を図10(B)に示す。ソースドライバのクロック周波数は図10(B)のBの期間の2倍の逆数にあたる。
本実施の形態では、トランジスタの作製例の一例を図1、図2、及び図3を用いて示す。
より金属導電膜を形成した後、フォトリソグラフィ工程によりレジストマスクを形成し、
選択的にエッチングを行って金属電極層を形成する。
実施の形態5は、第1の酸化物部材と第2の酸化物部材に同一成分を含む酸化物半導体材料を用いる場合を示したが、本実施の形態では異なる成分の酸化物半導体材料を用いる場合を示す。
本実施の形態では、c軸配向した結晶層を有する積層酸化物材料を含むトランジスタを作製し、該トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製する場合について説明する。また、トランジスタを、駆動回路の一部または全体を、画素部と同一基板上に形成し、システムオンパネルを形成することができる。
半導体装置の一形態に相当する発光表示パネル(発光パネルともいう)の外観及び断面について、図19を用いて説明する。図19(A)は、第1の基板上に形成されたc軸配向した結晶層を有する積層酸化物材料を含むトランジスタ及び発光素子を、第2の基板との間にシール材によって封止した、パネルの平面図であり、図19(B)は、図19(A)のH−Iにおける断面図に相当する。
半導体装置の一形態として電子ペーパーの例を示す。
含む)とする。
あるため、電波発信源から表示機能付き半導体装置(単に表示装置、又は表示装置を具備する半導体装置ともいう)を遠ざけた場合であっても、表示された像を保存しておくことが可能となる。
である。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
401 ゲート電極層
402 ゲート絶縁層
403 第1の酸化物半導体層
404 第2の酸化物半導体層
405a ソース電極層
405b ドレイン電極層
407 酸化物絶縁層
430 酸化物半導体積層
431 島状の酸化物半導体積層
432 酸化物半導体積層
470 トランジスタ
500 下地部材
501 第1の酸化物結晶部材
502 酸化物半導体層
503a 酸化物結晶部材
503b 酸化物結晶部材
504 非晶質を含む層
520 下地部材
531 酸化物結晶部材
532 酸化物部材
533a 酸化物結晶部材
533b 酸化物結晶部材
580 基板
581 トランジスタ
583 絶縁層
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
596 基板
1501 ガラス基板
1502 画素部
1503 ゲートドライバ
1504 ゲートドライバ
1505 アナログスイッチ
1506 FPC
1507 FPC
1508 FPC
1509 FPC
1701 ガラス基板
1702 画素部
1703 ゲートドライバ
1704 ゲートドライバ
1705 ソースドライバ
1706 FPC
1707 FPC
1711 ガラス基板
1712 画素部
1713 ゲートドライバ
1714 ゲートドライバ
1715 ゲートドライバ
1716 ゲートドライバ
1717 ソースドライバ
1718 ソースドライバ
1719 ソースドライバ
1720 ソースドライバ
1721 FPC
1722 FPC
1723 FPC
1724 FPC
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3055 表示部(B)
3056 バッテリー
3057 表示部(A)
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電層
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4033 絶縁層
4035 スペーサー
4040 導電層
4501 基板
4502 画素部
4503a 信号線駆動回路
4503b 信号線駆動回路
4504a 走査線駆動回路
4504b 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 トランジスタ
4510 トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4518b FPC
4519 異方性導電層
4520 隔壁
4540 導電層
4541 絶縁層
4544 絶縁層
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
Claims (14)
- 絶縁基板上に複数の画素と複数の信号線、及び複数の走査線を有するアクティブマトリクス型表示装置であり、
前記絶縁基板上に、電界効果移動度が少なくとも50cm2/Vs以上であるトランジスタを有し、
前記トランジスタを1つの構成要素とするゲートドライバ、及びソース線駆動アナログスイッチを有し、
前記トランジスタは、酸化物半導体層を有する表示装置。 - 絶縁基板上に複数の画素と複数の信号線、及び複数の走査線を有するアクティブマトリクス型表示装置であり、
前記絶縁基板上に、電界効果移動度が100cm2/Vs以上であるトランジスタを有し、
前記トランジスタを1つの構成要素とするゲートドライバ、及びソース線駆動アナログスイッチを有し、
前記トランジスタは、酸化物半導体層を有する表示装置。 - 請求項1または請求項2に記載の表示装置において、表示パネルの対角は20インチ以上の表示装置。
- 請求項1乃至3のいずれか一において、前記酸化物半導体層は、ゲート絶縁層を介してゲート電極層と重なるチャネル形成領域を少なくとも有する表示装置。
- 請求項1乃至4のいずれか一において、前記ゲートドライバ、及び前記ソース線駆動アナログスイッチは、同一絶縁基板上に設けられている表示装置。
- 絶縁基板上に複数の画素と複数の信号線、及び複数の走査線を有するアクティブマトリクス型表示装置であり、
前記絶縁基板上に、電界効果移動度が少なくとも50cm2/Vs以上であるトランジスタを有し、
前記トランジスタを1つの構成要素とするゲートドライバ、及びソースドライバを有し、
前記トランジスタは、酸化物半導体層を有する表示装置。 - 絶縁基板上に複数の画素と複数の信号線、及び複数の走査線を有するアクティブマトリクス型表示装置であり、
前記絶縁基板上に、電界効果移動度が100cm2/Vs以上であるトランジスタを有し、
前記トランジスタを1つの構成要素とするゲートドライバ、及びソースドライバを有し、
前記トランジスタは、酸化物半導体層を有する表示装置。 - 請求項6または請求項7に記載の表示装置において、表示パネルの対角は20インチ以上の表示装置。
- 請求項6乃至8のいずれか一において、前記酸化物半導体層は、ゲート絶縁層を介してゲート電極層と重なるチャネル形成領域を少なくとも有する表示装置。
- 請求項6乃至9のいずれか一において、前記ゲートドライバ、及び前記ソースドライバは、同一絶縁基板上に設けられている表示装置。
- 絶縁基板上に複数の画素と複数の信号線、及び複数の走査線を有するアクティブマトリクス型表示装置であり、
前記絶縁基板上に、第1のトランジスタを有する画素と、第2のトランジスタを1つの構成要素とするゲートドライバと、第3のトランジスタを1つの構成要素とするソースドライバとを有し、
前記第1、第2、及び第3のトランジスタは、電界効果移動度が少なくとも50cm2/Vs以上であり、
前記第1、第2、及び第3のトランジスタは、酸化物半導体層を有する表示装置。 - 絶縁基板上に複数の画素と複数の信号線、及び複数の走査線を有するアクティブマトリクス型表示装置であり、
前記絶縁基板上に、第1のトランジスタを有する画素と、第2のトランジスタを1つの構成要素とするゲートドライバと、第3のトランジスタを1つの構成要素とするソースドライバとを有し、
前記第1、第2、及び第3のトランジスタは、電界効果移動度が100cm2/Vs以上であり、
前記第1、第2、及び第3のトランジスタは、酸化物半導体層を有する表示装置。 - 請求項11または請求項12に記載の表示装置において、表示パネルの対角は20インチ以上の表示装置。
- 請求項11乃至請求項13のいずれか一において、前記酸化物半導体層は、ゲート絶縁層を介してゲート電極層と重なるチャネル形成領域を少なくとも有する表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010269522A JP5778919B2 (ja) | 2009-12-04 | 2010-12-02 | 表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009276918 | 2009-12-04 | ||
JP2009276918 | 2009-12-04 | ||
JP2010269522A JP5778919B2 (ja) | 2009-12-04 | 2010-12-02 | 表示装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014207209A Division JP5735692B2 (ja) | 2009-12-04 | 2014-10-08 | 表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011139056A true JP2011139056A (ja) | 2011-07-14 |
JP2011139056A5 JP2011139056A5 (ja) | 2014-01-09 |
JP5778919B2 JP5778919B2 (ja) | 2015-09-16 |
Family
ID=44114873
Family Applications (10)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010269522A Active JP5778919B2 (ja) | 2009-12-04 | 2010-12-02 | 表示装置 |
JP2014207209A Active JP5735692B2 (ja) | 2009-12-04 | 2014-10-08 | 表示装置 |
JP2015084032A Active JP5978342B2 (ja) | 2009-12-04 | 2015-04-16 | 表示装置 |
JP2016145128A Active JP6211149B2 (ja) | 2009-12-04 | 2016-07-25 | 表示装置 |
JP2017174803A Active JP6370979B2 (ja) | 2009-12-04 | 2017-09-12 | 表示装置 |
JP2018131177A Active JP6553258B2 (ja) | 2009-12-04 | 2018-07-11 | 表示装置 |
JP2019124128A Active JP6840193B2 (ja) | 2009-12-04 | 2019-07-03 | トランジスタ |
JP2021022365A Active JP7039742B2 (ja) | 2009-12-04 | 2021-02-16 | トランジスタ |
JP2022036123A Active JP7362811B2 (ja) | 2009-12-04 | 2022-03-09 | 表示装置 |
JP2023172795A Pending JP2024012304A (ja) | 2009-12-04 | 2023-10-04 | 表示装置 |
Family Applications After (9)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014207209A Active JP5735692B2 (ja) | 2009-12-04 | 2014-10-08 | 表示装置 |
JP2015084032A Active JP5978342B2 (ja) | 2009-12-04 | 2015-04-16 | 表示装置 |
JP2016145128A Active JP6211149B2 (ja) | 2009-12-04 | 2016-07-25 | 表示装置 |
JP2017174803A Active JP6370979B2 (ja) | 2009-12-04 | 2017-09-12 | 表示装置 |
JP2018131177A Active JP6553258B2 (ja) | 2009-12-04 | 2018-07-11 | 表示装置 |
JP2019124128A Active JP6840193B2 (ja) | 2009-12-04 | 2019-07-03 | トランジスタ |
JP2021022365A Active JP7039742B2 (ja) | 2009-12-04 | 2021-02-16 | トランジスタ |
JP2022036123A Active JP7362811B2 (ja) | 2009-12-04 | 2022-03-09 | 表示装置 |
JP2023172795A Pending JP2024012304A (ja) | 2009-12-04 | 2023-10-04 | 表示装置 |
Country Status (5)
Country | Link |
---|---|
US (8) | US8247813B2 (ja) |
JP (10) | JP5778919B2 (ja) |
KR (6) | KR102462239B1 (ja) |
TW (3) | TWI654688B (ja) |
WO (1) | WO2011068017A1 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013065549A (ja) * | 2011-08-26 | 2013-04-11 | Semiconductor Energy Lab Co Ltd | 発光モジュール、発光装置、発光モジュールの作製方法、発光装置の作製方法 |
JP2013145878A (ja) * | 2011-12-14 | 2013-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び当該半導体装置を用いた表示装置 |
JP2014013892A (ja) * | 2012-06-06 | 2014-01-23 | Kobe Steel Ltd | 薄膜トランジスタ |
WO2015108110A1 (ja) * | 2014-01-15 | 2015-07-23 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
JP2017135395A (ja) * | 2011-07-15 | 2017-08-03 | 株式会社半導体エネルギー研究所 | 固体撮像装置及び固体撮像装置の作製方法 |
JP2017175130A (ja) * | 2016-03-22 | 2017-09-28 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置 |
JP2017228808A (ja) * | 2013-02-13 | 2017-12-28 | 出光興産株式会社 | 薄膜トランジスタ |
WO2018168984A1 (ja) * | 2017-03-17 | 2018-09-20 | シャープ株式会社 | アクティブマトリクス基板および表示装置 |
JP2019186564A (ja) * | 2009-12-04 | 2019-10-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2020184635A (ja) * | 2011-09-29 | 2020-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2020229917A1 (ja) * | 2019-05-10 | 2020-11-19 | 株式会社半導体エネルギー研究所 | 表示装置 |
US12027091B2 (en) | 2019-05-10 | 2024-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101820972B1 (ko) | 2009-10-09 | 2018-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
EP2497115A4 (en) | 2009-11-06 | 2015-09-02 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
CN105206514B (zh) | 2009-11-28 | 2018-04-10 | 株式会社半导体能源研究所 | 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法 |
WO2011065210A1 (en) * | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
KR101963300B1 (ko) | 2009-12-04 | 2019-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR101894821B1 (ko) * | 2009-12-11 | 2018-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101436120B1 (ko) | 2009-12-28 | 2014-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR101878206B1 (ko) | 2010-03-05 | 2018-07-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법 |
US8629438B2 (en) | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5458443B2 (ja) * | 2010-09-14 | 2014-04-02 | 株式会社ジャパンディスプレイ | タッチ検出機能付き表示装置、および電子機器 |
WO2012128030A1 (en) * | 2011-03-18 | 2012-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device |
US8878288B2 (en) | 2011-04-22 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8932913B2 (en) | 2011-04-22 | 2015-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8809854B2 (en) | 2011-04-22 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8916868B2 (en) | 2011-04-22 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8946066B2 (en) | 2011-05-11 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US8847233B2 (en) | 2011-05-12 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film |
US9397222B2 (en) | 2011-05-13 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
KR101940570B1 (ko) | 2011-05-13 | 2019-01-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | El 표시 장치 및 그 전자 기기 |
KR20180064565A (ko) | 2011-06-08 | 2018-06-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법 |
US9130044B2 (en) | 2011-07-01 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8952377B2 (en) * | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9431545B2 (en) | 2011-09-23 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8637864B2 (en) | 2011-10-13 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP5912394B2 (ja) | 2011-10-13 | 2016-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6053490B2 (ja) | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR102330543B1 (ko) | 2012-04-13 | 2021-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6076612B2 (ja) * | 2012-04-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2013179922A1 (en) * | 2012-05-31 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9885108B2 (en) | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
CN102856392B (zh) * | 2012-10-09 | 2015-12-02 | 深圳市华星光电技术有限公司 | 薄膜晶体管主动装置及其制作方法 |
US20140151095A1 (en) * | 2012-12-05 | 2014-06-05 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method for manufacturing the same |
JP6141777B2 (ja) | 2013-02-28 | 2017-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
KR102089326B1 (ko) * | 2013-10-01 | 2020-03-17 | 엘지디스플레이 주식회사 | 표시장치 |
JP6537264B2 (ja) * | 2013-12-12 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015115469A (ja) | 2013-12-12 | 2015-06-22 | ソニー株式会社 | 薄膜トランジスタ、表示装置、電子機器、および薄膜トランジスタの製造方法 |
KR102127240B1 (ko) * | 2013-12-13 | 2020-06-26 | 엘지디스플레이 주식회사 | 표시장치 및 그 신호라인, 그 제조방법 |
FR3037438B1 (fr) * | 2015-06-09 | 2017-06-16 | Soitec Silicon On Insulator | Procede de fabrication d'un element semi-conducteur comprenant une couche de piegeage de charges |
US10302019B2 (en) * | 2016-03-03 | 2019-05-28 | General Electric Company | High pressure compressor augmented bleed with autonomously actuated valve |
FR3058561B1 (fr) | 2016-11-04 | 2018-11-02 | Soitec | Procede de fabrication d'un element semi-conducteur comprenant un substrat hautement resistif |
WO2018181296A1 (ja) * | 2017-03-29 | 2018-10-04 | シャープ株式会社 | チャネルエッチ型薄膜トランジスタの製造方法 |
CN107544185B (zh) * | 2017-09-25 | 2020-08-18 | 京东方科技集团股份有限公司 | 阵列基板、显示面板及显示装置 |
CN107862998B (zh) * | 2017-11-09 | 2020-05-19 | 深圳市华星光电半导体显示技术有限公司 | 一种柔性goa显示面板及其制作方法 |
CN107919365B (zh) * | 2017-11-21 | 2019-10-11 | 深圳市华星光电半导体显示技术有限公司 | 背沟道蚀刻型tft基板及其制作方法 |
WO2019111105A1 (ja) | 2017-12-06 | 2019-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
US20190280052A1 (en) * | 2018-03-12 | 2019-09-12 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for manufacturing a touch-control panel and oled touch-control apparauts |
JPWO2019224655A1 (ja) | 2018-05-25 | 2021-07-26 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
TWI693785B (zh) * | 2019-01-24 | 2020-05-11 | 研能科技股份有限公司 | 微機電泵模組 |
TWI697192B (zh) * | 2019-01-24 | 2020-06-21 | 研能科技股份有限公司 | 微機電泵模組 |
TWI699086B (zh) * | 2019-01-24 | 2020-07-11 | 研能科技股份有限公司 | 微機電泵模組 |
KR20210009000A (ko) | 2019-07-16 | 2021-01-26 | 삼성전자주식회사 | 반도체 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1045496A (ja) * | 1996-07-31 | 1998-02-17 | Hoya Corp | 導電性酸化物薄膜、この薄膜を有する物品及びその製造方法 |
JP2007123861A (ja) * | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2007165861A (ja) * | 2005-11-15 | 2007-06-28 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2008042088A (ja) * | 2006-08-09 | 2008-02-21 | Nec Corp | 薄膜デバイス及びその製造方法 |
WO2008136505A1 (ja) * | 2007-05-08 | 2008-11-13 | Idemitsu Kosan Co., Ltd. | 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法 |
JP2009231664A (ja) * | 2008-03-25 | 2009-10-08 | Idemitsu Kosan Co Ltd | 電界効果トランジスタ及びその製造方法 |
Family Cites Families (151)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
US5859630A (en) | 1996-12-09 | 1999-01-12 | Thomson Multimedia S.A. | Bi-directional shift register |
JP3945887B2 (ja) * | 1998-01-30 | 2007-07-18 | Hoya株式会社 | 導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000026119A (ja) | 1998-07-09 | 2000-01-25 | Hoya Corp | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
WO2002016679A1 (fr) | 2000-08-18 | 2002-02-28 | Tohoku Techno Arch Co., Ltd. | Matiere semi-conductrice polycristalline |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
TWI306311B (en) | 2002-06-21 | 2009-02-11 | Sanyo Electric Co | Thin film transistor and method for producing thin film transistor |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
GB2397710A (en) | 2003-01-25 | 2004-07-28 | Sharp Kk | A shift register for an LCD driver, comprising reset-dominant RS flip-flops |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
JP2005150203A (ja) | 2003-11-12 | 2005-06-09 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ及び相補型電界効果トランジスタ並びにこれらの製造方法 |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
JP4713192B2 (ja) * | 2004-03-25 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US7476572B2 (en) | 2004-03-25 | 2009-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor |
JP4583797B2 (ja) * | 2004-04-14 | 2010-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
US7622338B2 (en) | 2004-08-31 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
JP5110785B2 (ja) * | 2004-10-08 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
US7470604B2 (en) | 2004-10-08 | 2008-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
CA2708335A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
EP1810335B1 (en) | 2004-11-10 | 2020-05-27 | Canon Kabushiki Kaisha | Light-emitting device |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
AU2005302964B2 (en) | 2004-11-10 | 2010-11-04 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI412138B (zh) | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101112652B1 (ko) | 2005-11-15 | 2012-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
KR101437086B1 (ko) | 2006-01-07 | 2014-09-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치와, 이 반도체장치를 구비한 표시장치 및 전자기기 |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) * | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP5015473B2 (ja) | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタアレイ及びその製法 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
JP5271504B2 (ja) * | 2006-04-28 | 2013-08-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US20070252233A1 (en) | 2006-04-28 | 2007-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
KR101014473B1 (ko) | 2006-06-02 | 2011-02-14 | 가시오게산키 가부시키가이샤 | 산화아연의 산화물 반도체 박막층을 포함하는 반도체 장치및 그 제조방법 |
US20070287221A1 (en) | 2006-06-12 | 2007-12-13 | Xerox Corporation | Fabrication process for crystalline zinc oxide semiconductor layer |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4932415B2 (ja) | 2006-09-29 | 2012-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI834568B (zh) | 2006-09-29 | 2024-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7511343B2 (en) | 2006-10-12 | 2009-03-31 | Xerox Corporation | Thin film transistor |
JP2008116652A (ja) * | 2006-11-02 | 2008-05-22 | Seiko Epson Corp | 配線基板およびその製造方法、並びに電子機器 |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101146574B1 (ko) | 2006-12-05 | 2012-05-16 | 캐논 가부시끼가이샤 | 산화물 반도체를 이용한 박막 트랜지스터의 제조방법 및 표시장치 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
TWI478347B (zh) | 2007-02-09 | 2015-03-21 | Idemitsu Kosan Co | A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US8158974B2 (en) | 2007-03-23 | 2012-04-17 | Idemitsu Kosan Co., Ltd. | Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor |
WO2008126879A1 (en) | 2007-04-09 | 2008-10-23 | Canon Kabushiki Kaisha | Light-emitting apparatus and production method thereof |
JP5197058B2 (ja) | 2007-04-09 | 2013-05-15 | キヤノン株式会社 | 発光装置とその作製方法 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
JP5043499B2 (ja) * | 2007-05-02 | 2012-10-10 | 財団法人高知県産業振興センター | 電子素子及び電子素子の製造方法 |
JP5164427B2 (ja) * | 2007-05-11 | 2013-03-21 | 株式会社ジャパンディスプレイウェスト | 半導体装置およびその駆動方法、表示装置およびその駆動方法 |
JP5215589B2 (ja) | 2007-05-11 | 2013-06-19 | キヤノン株式会社 | 絶縁ゲート型トランジスタ及び表示装置 |
JP4462289B2 (ja) * | 2007-05-18 | 2010-05-12 | ソニー株式会社 | 半導体層の成長方法および半導体発光素子の製造方法 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8354674B2 (en) | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
JP5354999B2 (ja) | 2007-09-26 | 2013-11-27 | キヤノン株式会社 | 電界効果型トランジスタの製造方法 |
JP2009135448A (ja) | 2007-11-01 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法及び半導体装置の作製方法 |
US7768008B2 (en) | 2007-11-13 | 2010-08-03 | Toppan Printing Co., Ltd. | Thin film transistor, method for manufacturing the same and display using the same |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP5219529B2 (ja) | 2008-01-23 | 2013-06-26 | キヤノン株式会社 | 電界効果型トランジスタ及び、該電界効果型トランジスタを備えた表示装置 |
JP4555358B2 (ja) | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
KR100941850B1 (ko) | 2008-04-03 | 2010-02-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP2009267399A (ja) | 2008-04-04 | 2009-11-12 | Fujifilm Corp | 半導体装置,半導体装置の製造方法,表示装置及び表示装置の製造方法 |
KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP5345456B2 (ja) | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5606682B2 (ja) | 2009-01-29 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法 |
JP4415062B1 (ja) | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
JP4571221B1 (ja) | 2009-06-22 | 2010-10-27 | 富士フイルム株式会社 | Igzo系酸化物材料及びigzo系酸化物材料の製造方法 |
KR102462239B1 (ko) | 2009-12-04 | 2022-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2011138934A (ja) | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
JP2011187506A (ja) | 2010-03-04 | 2011-09-22 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
JP2012160679A (ja) | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
FR2982887B1 (fr) | 2011-11-18 | 2014-01-31 | Coatex Sas | Polymeres faiblement anioniques pour sauces de couchage destinees a des papiers pour impression de type jet d'encre |
-
2010
- 2010-11-04 KR KR1020217038353A patent/KR102462239B1/ko active IP Right Grant
- 2010-11-04 KR KR1020127017051A patent/KR101833198B1/ko active IP Right Grant
- 2010-11-04 KR KR1020207025239A patent/KR102333270B1/ko active Application Filing
- 2010-11-04 KR KR1020197023002A patent/KR102153034B1/ko active IP Right Grant
- 2010-11-04 WO PCT/JP2010/070062 patent/WO2011068017A1/en active Application Filing
- 2010-11-04 KR KR1020227037566A patent/KR20220149630A/ko not_active Application Discontinuation
- 2010-11-04 KR KR1020187004920A patent/KR102010752B1/ko active IP Right Grant
- 2010-11-30 TW TW106105944A patent/TWI654688B/zh active
- 2010-11-30 TW TW104144469A patent/TWI584385B/zh active
- 2010-11-30 TW TW099141514A patent/TWI527123B/zh active
- 2010-12-01 US US12/957,517 patent/US8247813B2/en active Active
- 2010-12-02 JP JP2010269522A patent/JP5778919B2/ja active Active
-
2012
- 2012-08-09 US US13/570,297 patent/US8866138B2/en active Active
-
2014
- 2014-10-06 US US14/507,204 patent/US9721971B2/en active Active
- 2014-10-08 JP JP2014207209A patent/JP5735692B2/ja active Active
-
2015
- 2015-04-16 JP JP2015084032A patent/JP5978342B2/ja active Active
-
2016
- 2016-07-25 JP JP2016145128A patent/JP6211149B2/ja active Active
- 2016-12-06 US US15/370,034 patent/US9991286B2/en active Active
-
2017
- 2017-09-12 JP JP2017174803A patent/JP6370979B2/ja active Active
-
2018
- 2018-05-24 US US15/988,534 patent/US10840268B2/en active Active
- 2018-07-11 JP JP2018131177A patent/JP6553258B2/ja active Active
-
2019
- 2019-07-03 JP JP2019124128A patent/JP6840193B2/ja active Active
- 2019-10-15 US US16/653,007 patent/US20200052004A1/en not_active Abandoned
-
2021
- 2021-02-16 JP JP2021022365A patent/JP7039742B2/ja active Active
- 2021-12-01 US US17/539,249 patent/US11728349B2/en active Active
-
2022
- 2022-03-09 JP JP2022036123A patent/JP7362811B2/ja active Active
-
2023
- 2023-08-08 US US18/231,382 patent/US20240055436A1/en active Pending
- 2023-10-04 JP JP2023172795A patent/JP2024012304A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1045496A (ja) * | 1996-07-31 | 1998-02-17 | Hoya Corp | 導電性酸化物薄膜、この薄膜を有する物品及びその製造方法 |
JP2007123861A (ja) * | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2007165861A (ja) * | 2005-11-15 | 2007-06-28 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2008042088A (ja) * | 2006-08-09 | 2008-02-21 | Nec Corp | 薄膜デバイス及びその製造方法 |
WO2008136505A1 (ja) * | 2007-05-08 | 2008-11-13 | Idemitsu Kosan Co., Ltd. | 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法 |
JP2009231664A (ja) * | 2008-03-25 | 2009-10-08 | Idemitsu Kosan Co Ltd | 電界効果トランジスタ及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
HYUN SUNG KIM , ET AL.: "High Performance Solution-Processed Indium Oxide Thin-Film Transistors", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 130, JPN6015006444, 29 August 2008 (2008-08-29), pages 12580 - 12581, ISSN: 0003009293 * |
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019186564A (ja) * | 2009-12-04 | 2019-10-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11728349B2 (en) | 2009-12-04 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
US10840268B2 (en) | 2009-12-04 | 2020-11-17 | Semiconductor Energy Laboratories Co., Ltd. | Display device and electronic device including the same |
JP2017135395A (ja) * | 2011-07-15 | 2017-08-03 | 株式会社半導体エネルギー研究所 | 固体撮像装置及び固体撮像装置の作製方法 |
US9911782B2 (en) | 2011-07-15 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
JP2013065549A (ja) * | 2011-08-26 | 2013-04-11 | Semiconductor Energy Lab Co Ltd | 発光モジュール、発光装置、発光モジュールの作製方法、発光装置の作製方法 |
US9577219B2 (en) | 2011-08-26 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting module, light-emitting device, method of manufacturing the light-emitting module, and method of manufacturing the light-emitting device |
US11791415B2 (en) | 2011-09-29 | 2023-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11217701B2 (en) | 2011-09-29 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2020184635A (ja) * | 2011-09-29 | 2020-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11302819B2 (en) | 2011-12-14 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
US12002886B2 (en) | 2011-12-14 | 2024-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
JP2013145878A (ja) * | 2011-12-14 | 2013-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び当該半導体装置を用いた表示装置 |
US10002968B2 (en) | 2011-12-14 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
US10680110B2 (en) | 2011-12-14 | 2020-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
JP2014013892A (ja) * | 2012-06-06 | 2014-01-23 | Kobe Steel Ltd | 薄膜トランジスタ |
JP2017228808A (ja) * | 2013-02-13 | 2017-12-28 | 出光興産株式会社 | 薄膜トランジスタ |
JP2015156482A (ja) * | 2014-01-15 | 2015-08-27 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
WO2015108110A1 (ja) * | 2014-01-15 | 2015-07-23 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
JP2022028779A (ja) * | 2016-03-22 | 2022-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11721769B2 (en) | 2016-03-22 | 2023-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
KR20210124499A (ko) * | 2016-03-22 | 2021-10-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
CN108780757A (zh) * | 2016-03-22 | 2018-11-09 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
KR102640383B1 (ko) * | 2016-03-22 | 2024-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
KR20180124909A (ko) * | 2016-03-22 | 2018-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
KR102448587B1 (ko) * | 2016-03-22 | 2022-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
KR20220137143A (ko) * | 2016-03-22 | 2022-10-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
US11489076B2 (en) | 2016-03-22 | 2022-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
JP2017175130A (ja) * | 2016-03-22 | 2017-09-28 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置 |
KR102308648B1 (ko) * | 2016-03-22 | 2021-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
WO2018168984A1 (ja) * | 2017-03-17 | 2018-09-20 | シャープ株式会社 | アクティブマトリクス基板および表示装置 |
US10866475B2 (en) | 2017-03-17 | 2020-12-15 | Sharp Kabushiki Kaisha | Active matrix substrate and display device |
US11626052B2 (en) | 2019-05-10 | 2023-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2020229917A1 (ja) * | 2019-05-10 | 2020-11-19 | 株式会社半導体エネルギー研究所 | 表示装置 |
US12027091B2 (en) | 2019-05-10 | 2024-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11728349B2 (en) | Display device and electronic device including the same | |
JP7064542B2 (ja) | 半導体装置 | |
JP5312708B2 (ja) | 半導体装置の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131115 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131115 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141209 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150224 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150406 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150707 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150710 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5778919 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |