KR101990274B1 - 워드선 분할 회로, 및 기억 장치 - Google Patents

워드선 분할 회로, 및 기억 장치 Download PDF

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Publication number
KR101990274B1
KR101990274B1 KR1020120052392A KR20120052392A KR101990274B1 KR 101990274 B1 KR101990274 B1 KR 101990274B1 KR 1020120052392 A KR1020120052392 A KR 1020120052392A KR 20120052392 A KR20120052392 A KR 20120052392A KR 101990274 B1 KR101990274 B1 KR 101990274B1
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South Korea
Prior art keywords
transistor
layer
insulating layer
word line
oxide
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Expired - Fee Related
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KR1020120052392A
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English (en)
Korean (ko)
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KR20120130127A (ko
Inventor
슈헤이 나가쓰카
다카노리 마쓰자키
히로키 이노우에
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020120052392A priority Critical patent/KR101990274B1/ko
Publication of KR20120130127A publication Critical patent/KR20120130127A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Thin Film Transistor (AREA)
KR1020120052392A 2011-05-20 2012-05-17 워드선 분할 회로, 및 기억 장치 Expired - Fee Related KR101990274B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120052392A KR101990274B1 (ko) 2011-05-20 2012-05-17 워드선 분할 회로, 및 기억 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011113011 2011-05-20
JPJP-P-2011-113011 2011-05-20
KR1020120052392A KR101990274B1 (ko) 2011-05-20 2012-05-17 워드선 분할 회로, 및 기억 장치

Publications (2)

Publication Number Publication Date
KR20120130127A KR20120130127A (ko) 2012-11-29
KR101990274B1 true KR101990274B1 (ko) 2019-06-19

Family

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KR1020120052392A Expired - Fee Related KR101990274B1 (ko) 2011-05-20 2012-05-17 워드선 분할 회로, 및 기억 장치

Country Status (4)

Country Link
US (1) US9697878B2 (enExample)
JP (2) JP6091083B2 (enExample)
KR (1) KR101990274B1 (enExample)
TW (1) TW201312581A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014195241A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6537264B2 (ja) * 2013-12-12 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
US9589611B2 (en) 2015-04-01 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
JP6858549B2 (ja) 2015-12-28 2021-04-14 株式会社半導体エネルギー研究所 半導体装置、記憶装置
US10032492B2 (en) 2016-03-18 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driver IC, computer and electronic device
WO2025032474A1 (ja) * 2023-08-10 2025-02-13 株式会社半導体エネルギー研究所 半導体装置

Citations (3)

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