JP6091083B2 - 記憶装置 - Google Patents

記憶装置 Download PDF

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Publication number
JP6091083B2
JP6091083B2 JP2012111813A JP2012111813A JP6091083B2 JP 6091083 B2 JP6091083 B2 JP 6091083B2 JP 2012111813 A JP2012111813 A JP 2012111813A JP 2012111813 A JP2012111813 A JP 2012111813A JP 6091083 B2 JP6091083 B2 JP 6091083B2
Authority
JP
Japan
Prior art keywords
transistor
layer
insulating layer
word line
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012111813A
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English (en)
Japanese (ja)
Other versions
JP2013008434A5 (enExample
JP2013008434A (ja
Inventor
修平 長塚
修平 長塚
隆徳 松嵜
隆徳 松嵜
広樹 井上
広樹 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012111813A priority Critical patent/JP6091083B2/ja
Publication of JP2013008434A publication Critical patent/JP2013008434A/ja
Publication of JP2013008434A5 publication Critical patent/JP2013008434A5/ja
Application granted granted Critical
Publication of JP6091083B2 publication Critical patent/JP6091083B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Thin Film Transistor (AREA)
JP2012111813A 2011-05-20 2012-05-15 記憶装置 Expired - Fee Related JP6091083B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012111813A JP6091083B2 (ja) 2011-05-20 2012-05-15 記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011113011 2011-05-20
JP2011113011 2011-05-20
JP2012111813A JP6091083B2 (ja) 2011-05-20 2012-05-15 記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016195544A Division JP6235093B2 (ja) 2011-05-20 2016-10-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2013008434A JP2013008434A (ja) 2013-01-10
JP2013008434A5 JP2013008434A5 (enExample) 2015-06-25
JP6091083B2 true JP6091083B2 (ja) 2017-03-08

Family

ID=47174809

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012111813A Expired - Fee Related JP6091083B2 (ja) 2011-05-20 2012-05-15 記憶装置
JP2016195544A Expired - Fee Related JP6235093B2 (ja) 2011-05-20 2016-10-03 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016195544A Expired - Fee Related JP6235093B2 (ja) 2011-05-20 2016-10-03 半導体装置

Country Status (4)

Country Link
US (1) US9697878B2 (enExample)
JP (2) JP6091083B2 (enExample)
KR (1) KR101990274B1 (enExample)
TW (1) TW201312581A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014195241A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6537264B2 (ja) * 2013-12-12 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
US9589611B2 (en) 2015-04-01 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
JP6858549B2 (ja) 2015-12-28 2021-04-14 株式会社半導体エネルギー研究所 半導体装置、記憶装置
US10032492B2 (en) 2016-03-18 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driver IC, computer and electronic device
WO2025032474A1 (ja) * 2023-08-10 2025-02-13 株式会社半導体エネルギー研究所 半導体装置

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